頁 969 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  969/1,502
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封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot FQB9P25TM
Fairchild/ON Semiconductor

MOSFET P-CH 250V 9.4A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 4.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存11,268
MOSFET (Metal Oxide)
250V
9.4A (Tc)
10V
5V @ 250µA
38nC @ 10V
1180pF @ 25V
±30V
-
3.13W (Ta), 120W (Tc)
620 mOhm @ 4.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot 2N6802
Microsemi Corporation

MOSFET N-CH 500V TO-205AF TO-39

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
封裝: TO-205AD, TO-39-3 Metal Can
庫存5,376
MOSFET (Metal Oxide)
500V
2.5A (Tc)
10V
4V @ 250µA
4.46nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
1.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
FQD8P10TF_NB82052
Fairchild/ON Semiconductor

MOSFET P-CH 100V 6.6A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,592
MOSFET (Metal Oxide)
100V
6.6A (Tc)
10V
4V @ 250µA
15nC @ 10V
470pF @ 25V
±30V
-
2.5W (Ta), 44W (Tc)
530 mOhm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FDMJ1027P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3.2A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MicroFET (2x2)
  • Package / Case: 6-VDFN Exposed Pad
封裝: 6-VDFN Exposed Pad
庫存3,520
MOSFET (Metal Oxide)
20V
3.2A (Ta)
-
-
-
-
-
-
-
-
-
Surface Mount
6-MicroFET (2x2)
6-VDFN Exposed Pad
hot ZXM62P03GTA
Diodes Incorporated

MOSFET P-CH 30V 2.9A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存262,068
MOSFET (Metal Oxide)
30V
2.9A (Ta), 4A (Tc)
4.5V, 10V
1V @ 250µA
10.2nC @ 10V
330pF @ 25V
±20V
-
2W (Ta)
150 mOhm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot IRFL014NPBF
Infineon Technologies

MOSFET N-CH 55V 1.9A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存18,264
MOSFET (Metal Oxide)
55V
1.9A (Ta)
10V
4V @ 250µA
11nC @ 10V
190pF @ 25V
±20V
-
1W (Ta)
160 mOhm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
IXFB82N60P
IXYS

MOSFET N-CH 600V 82A PLUS 264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 41A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264?
  • Package / Case: TO-264-3, TO-264AA
封裝: TO-264-3, TO-264AA
庫存2,672
MOSFET (Metal Oxide)
600V
82A (Tc)
10V
5V @ 8mA
240nC @ 10V
23000pF @ 25V
±30V
-
1250W (Tc)
75 mOhm @ 41A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS264?
TO-264-3, TO-264AA
IXTH50N30
IXYS

MOSFET N-CH 300V 50A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存5,888
MOSFET (Metal Oxide)
300V
50A (Tc)
10V
4V @ 250µA
165nC @ 10V
4400pF @ 25V
±30V
-
400W (Tc)
65 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
DMN15H310SK3-13
Diodes Incorporated

MOSFET NCH 150V 8.3A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Ta)
  • Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,088
MOSFET (Metal Oxide)
150V
8.3A (Tc)
4V, 10V
3V @ 250µA
8.7nC @ 10V
405pF @ 25V
±20V
-
32W (Ta)
310 mOhm @ 1.5A, 10V
-55°C ~ 155°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
PMCM6501UNEZ
Nexperia USA Inc.

MOSFET N-CH 20V 5.4A 4WLCSP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 400mW
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-WLCSP (2x2)
  • Package / Case: 4-XFBGA, WLCSP
封裝: 4-XFBGA, WLCSP
庫存2,144
MOSFET (Metal Oxide)
20V
-
2.5V, 4.5V
-
6.2nC @ 4.5V
-
-
-
400mW
-
150°C (TJ)
Surface Mount
4-WLCSP (2x2)
4-XFBGA, WLCSP
DMTH6004SCT
Diodes Incorporated

MOSFET 60V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.65 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存5,120
MOSFET (Metal Oxide)
60V
100A (Tc)
10V
4V @ 250µA
95.4nC @ 10V
4556pF @ 30V
±20V
-
2.8W (Ta), 136W (Tc)
3.65 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
BUK9Y72-80E,115
Nexperia USA Inc.

MOSFET N-CH 80V LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 898pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封裝: SC-100, SOT-669
庫存5,344
MOSFET (Metal Oxide)
80V
15A (Tc)
5V, 10V
2.1V @ 1mA
7.9nC @ 5V
898pF @ 25V
±10V
-
45W (Tc)
72 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
FQD17N08LTM
Fairchild/ON Semiconductor

MOSFET N-CH 80V 12.9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 6.45A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,088
MOSFET (Metal Oxide)
80V
12.9A (Tc)
5V, 10V
2V @ 250µA
11.5nC @ 5V
520pF @ 25V
±20V
-
2.5W (Ta), 40W (Tc)
100 mOhm @ 6.45A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFS4410ZPBF
Infineon Technologies

MOSFET N-CH 100V 97A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存396,936
MOSFET (Metal Oxide)
100V
97A (Tc)
10V
4V @ 150µA
120nC @ 10V
4820pF @ 50V
±20V
-
230W (Tc)
9 mOhm @ 58A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF40N65M2
STMicroelectronics

MOSFET N-CH 650V 32A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存12,582
MOSFET (Metal Oxide)
650V
32A (Tc)
10V
4V @ 250µA
56.5nC @ 10V
2355pF @ 100V
±25V
-
25W (Tc)
99 mOhm @ 16A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot IRLB3036PBF
Infineon Technologies

MOSFET N-CH 60V 195A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存48,012
MOSFET (Metal Oxide)
60V
195A (Tc)
4.5V, 10V
2.5V @ 250µA
140nC @ 4.5V
11210pF @ 50V
±16V
-
380W (Tc)
2.4 mOhm @ 165A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IPD036N04L G
Infineon Technologies

MOSFET N-CH 40V 90A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存12,132
MOSFET (Metal Oxide)
40V
90A (Tc)
4.5V, 10V
2V @ 45µA
78nC @ 10V
6300pF @ 20V
±20V
-
94W (Tc)
3.6 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
C2M1000170J
Cree/Wolfspeed

MOSFET N-CH 1700V 5.3A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7 (Straight Leads)
封裝: TO-263-7 (Straight Leads)
庫存22,206
SiCFET (Silicon Carbide)
1700V
5.3A (Tc)
20V
3.1V @ 500µA (Typ)
13nC @ 20V
200pF @ 1000V
+25V, -10V
-
78W (Tc)
1.4 Ohm @ 2A, 20V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7 (Straight Leads)
hot STD4NK80ZT4
STMicroelectronics

MOSFET N-CH 800V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存204,960
MOSFET (Metal Oxide)
800V
3A (Tc)
10V
4.5V @ 50µA
22.5nC @ 10V
575pF @ 25V
±30V
-
80W (Tc)
3.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
SFW9510TM
Fairchild Semiconductor

P-CHANNEL POWER MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
MOSFET (Metal Oxide)
100 V
3.6A (Tc)
10V
4V @ 250µA
10 nC @ 10 V
335 pF @ 25 V
±30V
-
3.8W (Ta), 32W (Tc)
1.2Ohm @ 1.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
GT180P08T
Goford Semiconductor

MOSFET P-CH 80V 89A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: -
庫存108
MOSFET (Metal Oxide)
40 V
89A (Tc)
4.5V, 10V
2.5V @ 250µA
62 nC @ 10 V
6040 pF @ 40 V
±20V
-
245W (Tc)
17mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
NTEFS2MS31NTDG
onsemi

NTEFS2MS31 - NCH 12V 2.3A WLCSP

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S2M0120120D
SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
封裝: -
庫存900
SiC (Silicon Carbide Junction Transistor)
1200 V
21A (Tc)
20V
4V @ 3.3mA
29.6 nC @ 20 V
652 pF @ 1000 V
+20V, -5V
-
156W (Tc)
150mOhm @ 13.3A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AD
TO-247-3
XP3N5R0AYT
YAGEO XSEMI

MOSFET N-CH 30V 20A 63.5A PMPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 63.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.12W (Ta)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PMPAK® 3 x 3
  • Package / Case: 8-PowerDFN
封裝: -
庫存3,000
MOSFET (Metal Oxide)
30 V
20A (Ta), 63.5A (Tc)
4.5V, 10V
2.3V @ 250µA
64 nC @ 10 V
2800 pF @ 15 V
±20V
-
3.12W (Ta)
5mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PMPAK® 3 x 3
8-PowerDFN
IPB144N12N3GATMA1
Infineon Technologies

MOSFET N-CH 120V 56A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 61µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.4mOhm @ 56A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存7,638
MOSFET (Metal Oxide)
120 V
56A (Ta)
10V
4V @ 61µA
49 nC @ 10 V
3220 pF @ 60 V
±20V
-
107W (Tc)
14.4mOhm @ 56A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MSC040SMA120S
Microchip Technology

SICFET N-CH 1200V 64A TO268

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.6V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 303W
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封裝: -
庫存126
SiCFET (Silicon Carbide)
1200 V
64A (Tc)
20V
2.6V @ 2mA
137 nC @ 20 V
1990 pF @ 1000 V
+23V, -10V
-
303W
50mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
DMN3061SQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 770mW (Ta)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
30 V
2.3A (Ta)
3.3V, 10V
1.8V @ 250µA
5.5 nC @ 10 V
233 pF @ 15 V
±20V
-
770mW (Ta)
59mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
RQ1A070ZPHZGTR
Rohm Semiconductor

AUTOMOTIVE PCH -12V -7A SMALL SI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
封裝: -
庫存8,790
MOSFET (Metal Oxide)
12 V
7A (Ta)
1.5V, 4.5V
1V @ 1mA
58 nC @ 4.5 V
7400 pF @ 6 V
±10V
-
1.1W (Ta)
12mOhm @ 7A, 4.5V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead