頁 824 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  824/1,502
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庫存
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF6100PBF
Infineon Technologies

MOSFET P-CH 20V 5.1A FLIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-FlipFet?
  • Package / Case: 4-FlipFet?
封裝: 4-FlipFet?
庫存7,968
MOSFET (Metal Oxide)
20V
5.1A (Ta)
2.5V, 4.5V
1.2V @ 250µA
21nC @ 5V
1230pF @ 15V
±12V
-
2.2W (Ta)
65 mOhm @ 5.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-FlipFet?
4-FlipFet?
hot NTD5806NT4G
ON Semiconductor

MOSFET N-CH 40V 33A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存639,876
MOSFET (Metal Oxide)
40V
33A (Tc)
4.5V, 10V
2.5V @ 250µA
38nC @ 10V
860pF @ 25V
±20V
-
40W (Tc)
19 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA88N085T
IXYS

MOSFET N-CH 85V 88A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,856
MOSFET (Metal Oxide)
85V
88A (Tc)
10V
4V @ 100µA
69nC @ 10V
3140pF @ 25V
±20V
-
230W (Tc)
11 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9620STRR
Vishay Siliconix

MOSFET P-CH 200V 3.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,024
MOSFET (Metal Oxide)
200V
3.5A (Tc)
10V
4V @ 250µA
22nC @ 10V
350pF @ 25V
±20V
-
3W (Ta), 40W (Tc)
1.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLZ44STRR
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,312
MOSFET (Metal Oxide)
60V
50A (Tc)
4V, 5V
2V @ 250µA
66nC @ 5V
3300pF @ 25V
±10V
-
3.7W (Ta), 150W (Tc)
28 mOhm @ 31A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFR120
Vishay Siliconix

MOSFET N-CH 100V 7.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存814,548
MOSFET (Metal Oxide)
100V
7.7A (Tc)
10V
4V @ 250µA
16nC @ 10V
360pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
270 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFPC60LC
Vishay Siliconix

MOSFET N-CH 600V 16A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 9.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存2,336
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
4V @ 250µA
120nC @ 10V
3500pF @ 25V
±30V
-
280W (Tc)
400 mOhm @ 9.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IPD70N10S312ATMA1
Infineon Technologies

MOSFET N-CH 100V 70A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,624
MOSFET (Metal Oxide)
100V
70A (Tc)
10V
4V @ 83µA
65nC @ 10V
4355pF @ 25V
±20V
-
125W (Tc)
11.1 mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
APTM120UM70FAG
Microsemi Corporation

MOSFET N-CH 1200V 171A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 171A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封裝: SP6
庫存5,440
MOSFET (Metal Oxide)
1200V
171A
10V
5V @ 30mA
1650nC @ 10V
43500pF @ 25V
±30V
-
5000W (Tc)
80 mOhm @ 85.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
SCTWA50N120
STMicroelectronics

MOSFET N-CH SICFET 1.2KV HIP247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 318W (Tc)
  • Rds On (Max) @ Id, Vgs: 69 mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247?
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存4,480
SiCFET (Silicon Carbide)
1200V
65A (Tc)
20V
3V @ 1mA
122nC @ 20V
1900pF @ 400V
+25V, -10V
-
318W (Tc)
69 mOhm @ 40A, 20V
-55°C ~ 200°C (TJ)
Through Hole
HiP247?
TO-247-3
NVMFS4C01NT1G
ON Semiconductor

MOSFET N-CH 30V 49A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存6,112
MOSFET (Metal Oxide)
30V
49A (Ta), 319A (Tc)
4.5V, 10V
2.2V @ 250µA
139nC @ 10V
10144pF @ 15V
±20V
-
3.84W (Ta), 161W (Tc)
0.9 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NTTFS4941NTWG
ON Semiconductor

MOSFET N-CH 30V 8.3A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1619pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存4,736
MOSFET (Metal Oxide)
30V
8.3A (Ta), 46A (Tc)
4.5V, 10V
2.2V @ 250µA
22.8nC @ 10V
1619pF @ 15V
±20V
-
840mW (Ta), 25.5W (Tc)
6.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
SI5443DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 3.6A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
封裝: 8-SMD, Flat Lead
庫存4,240
MOSFET (Metal Oxide)
20V
3.6A (Ta)
2.5V, 4.5V
600mV @ 250µA (Min)
14nC @ 4.5V
-
±12V
-
1.3W (Ta)
65 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
PMV30UN2VL
Nexperia USA Inc.

PMV30UN2/SOT23/TO-236AB

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存7,712
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIRC16DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 60A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 10V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 54.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.96 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封裝: PowerPAK? SO-8
庫存7,472
MOSFET (Metal Oxide)
25V
60A (Tc)
4.5V, 10V
2.4V @ 250µA
48nC @ 4.5V
5150pF @ 10V
+20V, -16V
-
54.3W (Tc)
0.96 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
APT47M60J
Microsemi Corporation

MOSFET N-CH 600V 49A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
封裝: SOT-227-4, miniBLOC
庫存4,768
MOSFET (Metal Oxide)
600V
49A
10V
5V @ 2.5mA
330nC @ 10V
13190pF @ 25V
±30V
-
540W (Tc)
90 mOhm @ 33A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
CPC3980ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 800V SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 Ohm @ 100mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存101,886
MOSFET (Metal Oxide)
800V
-
0V
-
-
115pF @ 25V
±15V
Depletion Mode
1.8W (Ta)
45 Ohm @ 100mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot IPB015N04L G
Infineon Technologies

MOSFET N-CH 40V 120A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 346nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存390,000
MOSFET (Metal Oxide)
40V
120A (Tc)
4.5V, 10V
2V @ 200µA
346nC @ 10V
28000pF @ 25V
±20V
-
250W (Tc)
1.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDC608PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 5.8A SSOT-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存59,736
MOSFET (Metal Oxide)
20V
5.8A (Ta)
2.5V, 4.5V
1.5V @ 250µA
23nC @ 4.5V
1330pF @ 10V
±12V
-
1.6W (Ta)
30 mOhm @ 5.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
SCT2H12NZGC11
Rohm Semiconductor

MOSFET N-CH 1700V 3.7A

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PFM
  • Package / Case: TO-3PFM, SC-93-3
封裝: TO-3PFM, SC-93-3
庫存22,524
SiCFET (Silicon Carbide)
1700V
3.7A (Tc)
18V
4V @ 900µA
14nC @ 18V
184pF @ 800V
+22V, -6V
-
35W (Tc)
1.5 Ohm @ 1.1A, 18V
175°C (TJ)
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
SUD15N15-95-BE3
Vishay Siliconix

MOSFET N-CH 150V 15A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存18,930
MOSFET (Metal Oxide)
150 V
15A (Tc)
6V, 10V
2V @ 250µA
25 nC @ 10 V
900 pF @ 25 V
±20V
-
2.7W (Ta), 62W (Tc)
95mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQM40061EL_GE3
Vishay Siliconix

MOSFET P-CH 40V 100A TO263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存2,055
MOSFET (Metal Oxide)
40 V
100A (Tc)
4.5V, 10V
2.5V @ 250µA
280 nC @ 10 V
14500 pF @ 25 V
±20V
-
150W (Tc)
5.1mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHA15N65E-GE3
Vishay Siliconix

MOSFET N-CHANNEL 650V 15A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封裝: -
Request a Quote
MOSFET (Metal Oxide)
650 V
15A (Tc)
10V
4V @ 250µA
96 nC @ 10 V
2460 pF @ 100 V
±30V
-
34W (Tc)
280mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
SQJA38EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封裝: -
庫存18,000
MOSFET (Metal Oxide)
40 V
60A (Tc)
4.5V, 10V
2.4V @ 250µA
75 nC @ 10 V
3900 pF @ 25 V
±20V
-
68W (Tc)
3.9mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
MCU04N60A-TP
Micro Commercial Co

MOSFET N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 44.6W
  • Rds On (Max) @ Id, Vgs: 2.6Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
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MOSFET (Metal Oxide)
600 V
4A
10V
4.5V @ 250µA
10 nC @ 10 V
760 pF @ 25 V
±30V
-
44.6W
2.6Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
PSMN3R3-40MSHX
Nexperia USA Inc.

MOSFET N-CH 40V 118A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 118A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3063 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 101W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
封裝: -
庫存8,970
MOSFET (Metal Oxide)
40 V
118A (Ta)
10V
3.6V @ 1mA
42 nC @ 10 V
3063 pF @ 20 V
±20V
-
101W (Ta)
3.3mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
IRF8707TRPBFXTMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMT12H060LFDF-7
Diodes Incorporated

MOSFET BVDSS: 101V~250V U-DFN202

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 115 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封裝: -
庫存5,814
MOSFET (Metal Oxide)
115 V
4.4A (Ta)
1.5V, 4.5V
1.4V @ 250µA
7.8 nC @ 4.5 V
475 pF @ 50 V
±8V
-
1.1W (Ta)
65mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad