頁 819 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品

SIE860DF-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 60A POLARPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK? (M)
Package / Case: 10-PolarPAK? (M)

封裝: 10-PolarPAK? (M)

庫存5,600

MOSFET (Metal Oxide)

30V

60A (Tc)

4.5V, 10V

2.5V @ 250µA

105nC @ 10V

4500pF @ 15V

±20V

-

5.2W (Ta), 104W (Tc)

2.1 mOhm @ 21.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

10-PolarPAK? (M)

NTR1P02T3

ON Semiconductor

MOSFET P-CH 20V 1A SOT-23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存2,112

MOSFET (Metal Oxide)

20V

1A (Ta)

4.5V, 10V

2.3V @ 250µA

2.5nC @ 5V

165pF @ 5V

±20V

-

400mW (Ta)

180 mOhm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

NTB75N03RT4

ON Semiconductor

MOSFET N-CH 25V 9.7A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存12,312

MOSFET (Metal Oxide)

25V

9.7A (Ta), 75A (Tc)

4.5V, 10V

2V @ 250µA

13.2nC @ 10V

1333pF @ 20V

±20V

-

1.25W (Ta), 74.4W (Tc)

8 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFPG50

Vishay Siliconix

MOSFET N-CH 1000V 6.1A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存13,128

MOSFET (Metal Oxide)

1000V

6.1A (Tc)

10V

4V @ 250µA

190nC @ 10V

2800pF @ 25V

±20V

-

190W (Tc)

2 Ohm @ 3.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

IPC60R160C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存5,744

-

IXFX44N55Q

IXYS

MOSFET N-CH 550V 44A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存103,464

MOSFET (Metal Oxide)

550V

44A (Tc)

10V

4.5V @ 4mA

190nC @ 10V

6400pF @ 25V

±20V

-

500W (Tc)

120 mOhm @ 22A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFR13N50

IXYS

MOSFET N-CH 500V 13A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

封裝: ISOPLUS247?

庫存5,648

MOSFET (Metal Oxide)

500V

13A (Tc)

-

Through Hole

ISOPLUS247?

SUM110N04-04-E3

Vishay Siliconix

MOSFET N-CH 40V 110A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,240

MOSFET (Metal Oxide)

40V

110A (Tc)

10V

4V @ 250µA

200nC @ 10V

6800pF @ 25V

±20V

-

3.75W (Ta), 250W (Tc)

3.5 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2Pak)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STP180N4F6

STMicroelectronics

MOSFET N-CH 40V 120A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封裝: TO-220-3

庫存5,072

MOSFET (Metal Oxide)

40V

120A

4.5V, 10V

-

Through Hole

TO-220

TO-220-3

SI4840BDY-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 19A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存118,968

MOSFET (Metal Oxide)

40V

19A (Tc)

4.5V, 10V

3V @ 250µA

50nC @ 10V

2000pF @ 20V

±20V

-

2.5W (Ta), 6W (Tc)

9 mOhm @ 12.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

DMP3036SFVQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V PowerDI333

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8 (Type UX)
Package / Case: 8-PowerVDFN

封裝: -

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MOSFET (Metal Oxide)

30 V

8.7A (Ta), 30A (Tc)

5V, 10V

2.5V @ 250µA

16.5 nC @ 10 V

1931 pF @ 15 V

±25V

-

900mW (Ta)

20mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI3333-8 (Type UX)

8-PowerVDFN

IMT65R039M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-HSOF-8

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

ISC010N06NM5ATMA1

Infineon Technologies

OPTIMOS5 60 V POWER MOSFET IN SU

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

封裝: -

庫存10,725

MOSFET (Metal Oxide)

60 V

39A (Ta), 330A (Tc)

6V, 10V

3.3V @ 147µA

143 nC @ 10 V

11000 pF @ 30 V

±20V

-

3W (Ta), 214W (Tc)

1.05mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-3

8-PowerTDFN

ICE20N170B

IceMOS Technology

Superjunction MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant

封裝: -

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MOSFET (Metal Oxide)

600 V

20A (Tc)

10V

3.9V @ 250µA

59 nC @ 10 V

2064 pF @ 25 V

±20V

-

236W (Tc)

199mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263

TO-263-3, D2PAK (2 Leads + Tab), Variant

IMZA75R020M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封裝: -

Request a Quote

-

Through Hole

PG-TO247-4

TO-247-4

2SK1464

onsemi

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

MCG30N04HE3-TP

Micro Commercial Co

N-CHANNEL MOSFET, DFN3333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 24W (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN3333
Package / Case: 8-VDFN Exposed Pad

封裝: -

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MOSFET (Metal Oxide)

40 V

30A (Tc)

4.5V, 10V

2.5V @ 250µA

23 nC @ 10 V

990 pF @ 25 V

±20V

-

24W (Tj)

14mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DFN3333

8-VDFN Exposed Pad

DMT34M8LFDE-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type E)
Package / Case: 6-PowerUDFN

封裝: -

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MOSFET (Metal Oxide)

30 V

19A (Ta)

4.5V, 10V

2.5V @ 250µA

15.4 nC @ 10 V

1024 pF @ 15 V

±20V

-

1.1W (Ta)

4mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

U-DFN2020-6 (Type E)

6-PowerUDFN

DMN3732U-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 420mW
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

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MOSFET (Metal Oxide)

30 V

1A (Ta)

1.8V, 4.5V

0.95V @ 250µA

0.9 nC @ 4.5 V

40.8 pF @ 25 V

±8V

-

420mW

460mOhm @ 200mA, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

DMP3013SFV-7

Diodes Incorporated

MOSFET P-CH 30V 12A PWRDI3333

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8 (Type UX)
Package / Case: 8-PowerVDFN

封裝: -

庫存212,214

MOSFET (Metal Oxide)

30 V

12A (Ta), 35A (Tc)

4.5V, 10V

3V @ 250µA

33.7 nC @ 10 V

1674 pF @ 15 V

±25V

-

940mW (Ta)

9.5mOhm @ 11.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI3333-8 (Type UX)

8-PowerVDFN

BSF050N03LQ3G

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2
Package / Case: DirectFET™ Isometric MX

封裝: -

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MOSFET (Metal Oxide)

30 V

15A (Ta), 60A (Tc)

4.5V, 10V

2.2V @ 250µA

42 nC @ 10 V

3000 pF @ 15 V

±20V

-

2.2W (Ta), 28W (Tc)

5mOhm @ 20A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

MG-WDSON-2

DirectFET™ Isometric MX

DMP2010UFV-13

Diodes Incorporated

MOSFET P-CH 20V 50A POWERDI3333

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN

封裝: -

庫存8,628

MOSFET (Metal Oxide)

20 V

50A (Tc)

2.5V, 4.5V

1.2V @ 250µA

103 nC @ 10 V

3350 pF @ 10 V

±10V

-

2W (Ta)

9.5mOhm @ 3.6A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI3333-8

8-PowerVDFN

SIHP22N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 19A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack

封裝: -

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MOSFET (Metal Oxide)

600 V

19A (Tc)

10V

4V @ 250µA

96 nC @ 10 V

1423 pF @ 100 V

±30V

-

179W (Tc)

182mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Full Pack

TO-220-3 Full Pack

NVMFS5C410NWFET1G

onsemi

T6-40V N 0.92 MOHMS SL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

封裝: -

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MOSFET (Metal Oxide)

40 V

46A (Ta), 300A (Tc)

10V

3.5V @ 250µA

86 nC @ 10 V

6100 pF @ 25 V

±20V

-

3.9W (Ta), 166W (Tc)

0.92mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

APT10M09LVFRG

Microchip Technology

MOSFET N-CH 100V 100A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封裝: -

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MOSFET (Metal Oxide)

100 V

100A (Tc)

-

4V @ 2.5mA

350 nC @ 10 V

9875 pF @ 25 V

-

9mOhm @ 50A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

SSM3H137TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 34V 2A UFM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 34 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 119 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads

封裝: -

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MOSFET (Metal Oxide)

34 V

2A (Ta)

4V, 10V

1.7V @ 1mA

3 nC @ 10 V

119 pF @ 10 V

±20V

-

800mW (Ta)

240mOhm @ 1A, 10V

150°C

Surface Mount

UFM

3-SMD, Flat Leads

R6030KNXC7

Rohm Semiconductor

MOSFET N-CH 600V 30A TO220FM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

封裝: -

庫存4,500

MOSFET (Metal Oxide)

600 V

30A (Tc)

10V

5V @ 1mA

56 nC @ 10 V

2350 pF @ 25 V

±20V

-

86W (Tc)

130mOhm @ 14.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

MMFTN210A

Diotec Semiconductor

MOSFET SOT23 N 100V 0.32OHM 150C

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

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MOSFET (Metal Oxide)

100 V

2A (Ta)

4.5V, 10V

1.6V @ 250µA

3.5 nC @ 10 V

362 pF @ 50 V

±20V

-

1.56W (Ta)

320mOhm @ 1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIE860DF-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (M) Package / Case: 10-PolarPAK? (M)	封裝: 10-PolarPAK? (M)	庫存5,600	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	105nC @ 10V	4500pF @ 15V	±20V	-	5.2W (Ta), 104W (Tc)	2.1 mOhm @ 21.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (M)	10-PolarPAK? (M)
NTR1P02T3	ON Semiconductor	MOSFET P-CH 20V 1A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存2,112	MOSFET (Metal Oxide)	20V	1A (Ta)	4.5V, 10V	2.3V @ 250µA	2.5nC @ 5V	165pF @ 5V	±20V	-	400mW (Ta)	180 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTB75N03RT4	ON Semiconductor	MOSFET N-CH 25V 9.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存12,312	MOSFET (Metal Oxide)	25V	9.7A (Ta), 75A (Tc)	4.5V, 10V	2V @ 250µA	13.2nC @ 10V	1333pF @ 20V	±20V	-	1.25W (Ta), 74.4W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFPG50	Vishay Siliconix	MOSFET N-CH 1000V 6.1A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存13,128	MOSFET (Metal Oxide)	1000V	6.1A (Tc)	10V	4V @ 250µA	190nC @ 10V	2800pF @ 25V	±20V	-	190W (Tc)	2 Ohm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPC60R160C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存5,744	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFX44N55Q	IXYS	MOSFET N-CH 550V 44A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存103,464	MOSFET (Metal Oxide)	550V	44A (Tc)	10V	4.5V @ 4mA	190nC @ 10V	6400pF @ 25V	±20V	-	500W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFR13N50	IXYS	MOSFET N-CH 500V 13A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	封裝: ISOPLUS247?	庫存5,648	MOSFET (Metal Oxide)	500V	13A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
SUM110N04-04-E3	Vishay Siliconix	MOSFET N-CH 40V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,240	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	200nC @ 10V	6800pF @ 25V	±20V	-	3.75W (Ta), 250W (Tc)	3.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP180N4F6	STMicroelectronics	MOSFET N-CH 40V 120A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封裝: TO-220-3	庫存5,072	MOSFET (Metal Oxide)	40V	120A	4.5V, 10V	-	-	-	-	-	-	-	-	Through Hole	TO-220	TO-220-3
SI4840BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 19A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存118,968	MOSFET (Metal Oxide)	40V	19A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2000pF @ 20V	±20V	-	2.5W (Ta), 6W (Tc)	9 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMP3036SFVQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V PowerDI333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.7A (Ta), 30A (Tc)	5V, 10V	2.5V @ 250µA	16.5 nC @ 10 V	1931 pF @ 15 V	±25V	-	900mW (Ta)	20mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
IMT65R039M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET PG-HSOF-8 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISC010N06NM5ATMA1	Infineon Technologies	OPTIMOS5 60 V POWER MOSFET IN SU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 147µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	封裝: -	庫存10,725	MOSFET (Metal Oxide)	60 V	39A (Ta), 330A (Tc)	6V, 10V	3.3V @ 147µA	143 nC @ 10 V	11000 pF @ 30 V	±20V	-	3W (Ta), 214W (Tc)	1.05mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
ICE20N170B	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	3.9V @ 250µA	59 nC @ 10 V	2064 pF @ 25 V	±20V	-	236W (Tc)	199mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), Variant
IMZA75R020M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	PG-TO247-4	TO-247-4
2SK1464	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCG30N04HE3-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 24W (Tj) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	23 nC @ 10 V	990 pF @ 25 V	±20V	-	24W (Tj)	14mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
DMT34M8LFDE-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-PowerUDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	19A (Ta)	4.5V, 10V	2.5V @ 250µA	15.4 nC @ 10 V	1024 pF @ 15 V	±20V	-	1.1W (Ta)	4mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN
DMN3732U-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 420mW Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	1A (Ta)	1.8V, 4.5V	0.95V @ 250µA	0.9 nC @ 4.5 V	40.8 pF @ 25 V	±8V	-	420mW	460mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP3013SFV-7	Diodes Incorporated	MOSFET P-CH 30V 12A PWRDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	封裝: -	庫存212,214	MOSFET (Metal Oxide)	30 V	12A (Ta), 35A (Tc)	4.5V, 10V	3V @ 250µA	33.7 nC @ 10 V	1674 pF @ 15 V	±25V	-	940mW (Ta)	9.5mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
BSF050N03LQ3G	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2 Package / Case: DirectFET™ Isometric MX	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15A (Ta), 60A (Tc)	4.5V, 10V	2.2V @ 250µA	42 nC @ 10 V	3000 pF @ 15 V	±20V	-	2.2W (Ta), 28W (Tc)	5mOhm @ 20A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2	DirectFET™ Isometric MX
DMP2010UFV-13	Diodes Incorporated	MOSFET P-CH 20V 50A POWERDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	封裝: -	庫存8,628	MOSFET (Metal Oxide)	20 V	50A (Tc)	2.5V, 4.5V	1.2V @ 250µA	103 nC @ 10 V	3350 pF @ 10 V	±10V	-	2W (Ta)	9.5mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
SIHP22N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 19A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	19A (Tc)	10V	4V @ 250µA	96 nC @ 10 V	1423 pF @ 100 V	±30V	-	179W (Tc)	182mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
NVMFS5C410NWFET1G	onsemi	T6-40V N 0.92 MOHMS SL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	46A (Ta), 300A (Tc)	10V	3.5V @ 250µA	86 nC @ 10 V	6100 pF @ 25 V	±20V	-	3.9W (Ta), 166W (Tc)	0.92mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
APT10M09LVFRG	Microchip Technology	MOSFET N-CH 100V 100A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	100 V	100A (Tc)	-	4V @ 2.5mA	350 nC @ 10 V	9875 pF @ 25 V	-	-	-	9mOhm @ 50A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
SSM3H137TU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 34V 2A UFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 1.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 119 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	封裝: -	Request a Quote	MOSFET (Metal Oxide)	34 V	2A (Ta)	4V, 10V	1.7V @ 1mA	3 nC @ 10 V	119 pF @ 10 V	±20V	-	800mW (Ta)	240mOhm @ 1A, 10V	150°C	Surface Mount	UFM	3-SMD, Flat Leads
R6030KNXC7	Rohm Semiconductor	MOSFET N-CH 600V 30A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	封裝: -	庫存4,500	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	5V @ 1mA	56 nC @ 10 V	2350 pF @ 25 V	±20V	-	86W (Tc)	130mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
MMFTN210A	Diotec Semiconductor	MOSFET SOT23 N 100V 0.32OHM 150C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	100 V	2A (Ta)	4.5V, 10V	1.6V @ 250µA	3.5 nC @ 10 V	362 pF @ 50 V	±20V	-	1.56W (Ta)	320mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3