頁 765 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  765/1,502
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRLS3036TRRPBF
Infineon Technologies

MOSFET N-CH 60V 270A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,304
MOSFET (Metal Oxide)
60V
195A (Tc)
4.5V, 10V
2.5V @ 250µA
140nC @ 4.5V
11210pF @ 50V
±16V
-
380W (Tc)
2.4 mOhm @ 165A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF6798MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 37A DIRECTFET-MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 197A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6560pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 37A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
封裝: DirectFET? Isometric MX
庫存16,800
MOSFET (Metal Oxide)
25V
37A (Ta), 197A (Tc)
4.5V, 10V
2.35V @ 150µA
75nC @ 4.5V
6560pF @ 13V
±20V
Schottky Diode (Body)
2.8W (Ta), 78W (Tc)
1.3 mOhm @ 37A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
HN4K03JUTE85LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.1A USV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
  • Vgs (Max): 10V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
封裝: 5-TSSOP, SC-70-5, SOT-353
庫存3,632
MOSFET (Metal Oxide)
20V
100mA (Ta)
2.5V
-
-
8.5pF @ 3V
10V
-
200mW (Ta)
12 Ohm @ 10mA, 2.5V
150°C (TJ)
Surface Mount
USV
5-TSSOP, SC-70-5, SOT-353
APT11N80KC3G
Microsemi Corporation

MOSFET N-CH 800V 11A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 680µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存5,216
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
3.9V @ 680µA
60nC @ 10V
1585pF @ 25V
±20V
-
156W (Tc)
450 mOhm @ 7.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
AUIRFB4610
Infineon Technologies

MOSFET N-CH 100V 73A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存2,976
MOSFET (Metal Oxide)
100V
73A (Tc)
10V
4V @ 100µA
140nC @ 10V
3550pF @ 50V
±20V
-
190W (Tc)
14 mOhm @ 44A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
APTM50UM13SAG
Microsemi Corporation

MOSFET N-CH 500V 335A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 335A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 800nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3290W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 167.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
封裝: SP6
庫存5,840
MOSFET (Metal Oxide)
500V
335A
10V
5V @ 20mA
800nC @ 10V
42200pF @ 25V
±30V
-
3290W (Tc)
15 mOhm @ 167.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
IXTA1N170DHV
IXYS

MOSFET N-CH 1700V 1A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,048
MOSFET (Metal Oxide)
1700V
1A (Tc)
10V
-
47nC @ 5V
3090pF @ 25V
±20V
Depletion Mode
290W (Tc)
16 Ohm @ 500mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CMPDM7002AG BK
Central Semiconductor Corp

MOSFET N-CH 60V 0.28A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): 40V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存6,864
MOSFET (Metal Oxide)
60V
280mA (Ta)
5V, 10V
2.5V @ 250µA
0.59nC @ 4.5V
50pF @ 25V
40V
-
350mW (Ta)
2 Ohm @ 500mA, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot NTK3139PT5G
ON Semiconductor

MOSFET P-CH 20V 660MA SOT-723

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 780mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-723
  • Package / Case: SOT-723
封裝: SOT-723
庫存1,345,344
MOSFET (Metal Oxide)
20V
660mA (Ta)
1.5V, 4.5V
1.2V @ 250µA
-
170pF @ 16V
±6V
-
310mW (Ta)
480 mOhm @ 780mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
hot IRFI3205PBF
Infineon Technologies

MOSFET N-CH 55V 64A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存420,612
MOSFET (Metal Oxide)
55V
64A (Tc)
10V
4V @ 250µA
170nC @ 10V
4000pF @ 25V
±20V
-
63W (Tc)
8 mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
hot IRFR24N15DTRPBF
Infineon Technologies

MOSFET N-CH 150V 24A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存221,352
MOSFET (Metal Oxide)
150V
24A (Tc)
10V
5V @ 250µA
45nC @ 10V
890pF @ 25V
±30V
-
140W (Tc)
95 mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
MCP87022T-U/MF
Microchip Technology

MOSFET N-CH 25V 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 12.5V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5x6)
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存7,808
MOSFET (Metal Oxide)
25V
100A (Tc)
4.5V, 10V
1.6V @ 250µA
29nC @ 4.5V
2310pF @ 12.5V
+10V, -8V
-
2.2W (Ta)
2.3 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PDFN (5x6)
8-PowerTDFN
DMP3028LFDE-13
Diodes Incorporated

MOSFET P-CH 30V 6.8A U-DFN2020-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-UDFN Exposed Pad
封裝: 6-UDFN Exposed Pad
庫存5,616
MOSFET (Metal Oxide)
30V
6.8A (Ta)
4.5V, 10V
2.4V @ 250µA
22nC @ 10V
1241pF @ 15V
±20V
-
660mW (Ta)
32 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-UDFN Exposed Pad
STFI13NK60Z
STMicroelectronics

MOSFET N-CH 600V 13A I2PAK FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
封裝: TO-262-3 Full Pack, I2Pak
庫存15,144
MOSFET (Metal Oxide)
600V
13A (Tc)
10V
4.5V @ 100µA
92nC @ 10V
2030pF @ 25V
±30V
-
35W (Tc)
550 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
hot IRFU9310PBF
Vishay Siliconix

MOSFET P-CH 400V 1.8A I-PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存6,688
MOSFET (Metal Oxide)
400V
1.8A (Tc)
10V
4V @ 250µA
13nC @ 10V
270pF @ 25V
±20V
-
50W (Tc)
7 Ohm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
hot SI2367DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 3.8A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 66 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存649,200
MOSFET (Metal Oxide)
20V
3.8A (Tc)
1.8V, 4.5V
1V @ 250µA
23nC @ 8V
561pF @ 10V
±8V
-
960mW (Ta), 1.7W (Tc)
66 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PMZ320UPEYL
Nexperia USA Inc.

MOSFET P-CH 30V SOT883

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 122pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 510 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006-3
  • Package / Case: SC-101, SOT-883
封裝: SC-101, SOT-883
庫存234,384
MOSFET (Metal Oxide)
30V
1A (Ta)
1.5V, 4.5V
950mV @ 250µA
1.4nC @ 4.5V
122pF @ 15V
±8V
-
350mW (Ta), 6.25W (Tc)
510 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006-3
SC-101, SOT-883
EPC2001C
EPC

TRANS GAN 100V 36A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die Outline (11-Solder Bar)
  • Package / Case: Die
封裝: Die
庫存630,336
GaNFET (Gallium Nitride)
100V
36A (Ta)
5V
2.5V @ 5mA
9nC @ 5V
900pF @ 50V
+6V, -4V
-
-
7 mOhm @ 25A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die Outline (11-Solder Bar)
Die
hot SIA427DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 12A SC-70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
封裝: PowerPAK? SC-70-6
庫存703,812
MOSFET (Metal Oxide)
8V
12A (Tc)
1.2V, 4.5V
800mV @ 250µA
50nC @ 5V
2300pF @ 4V
±5V
-
3.5W (Ta), 19W (Tc)
16 mOhm @ 8.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
IMBG120R350M1HXTMA1
Infineon Technologies

SICFET N-CH 1.2KV 4.7A TO263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 800 V
  • Vgs (Max): +18V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 468mOhm @ 2A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封裝: -
庫存4,251
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
5.7V @ 1mA
5.9 nC @ 18 V
196 pF @ 800 V
+18V, -15V
-
65W (Tc)
468mOhm @ 2A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PMV40UN2-ML
MOSLEADER

N 30V 4.4A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SK3116B-ZK-E1-AY
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RFM6P10
Harris Corporation

P-CHANNEL POWER MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
100 V
6A (Tc)
10V
4V @ 250µA
-
800 pF @ 25 V
±20V
-
60W (Tc)
600mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
C3M0045065J1-TR
Wolfspeed, Inc.

SIC, MOSFET 45M, 650V TO-263-7XL

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封裝: -
庫存2,400
SiC (Silicon Carbide Junction Transistor)
650 V
47A (Tc)
15V
3.6V @ 4.84mA
61 nC @ 15 V
1621 pF @ 400 V
+19V, -8V
-
147W (Tc)
60mOhm @ 17.6A, 15V
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NVMTS0D7N06CTXG
onsemi

MOSFET N-CH 60V 60.5A/464A 8DFNW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 60.5A (Ta), 464A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11535 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.72mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFNW (8.3x8.4)
  • Package / Case: 8-PowerTDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
60.5A (Ta), 464A (Tc)
10V
4V @ 250µA
152 nC @ 10 V
11535 pF @ 30 V
±20V
-
5W (Ta), 294.6W (Tc)
0.72mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-DFNW (8.3x8.4)
8-PowerTDFN
RFP7N40
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
400 V
7A (Tc)
10V
4V @ 1mA
-
1600 pF @ 25 V
±20V
-
75W (Tc)
750mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO220FMDD4N65F
NextGen Components

MOSFET TO-220F N 650V 4A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
MOSFET (Metal Oxide)
650 V
4A (Tc)
10V
-
12 nC @ 10 V
-
±30V
-
-
2.8Ohm @ 2A, 10V
-
-
-
-
SIDR638DP-T1-RE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
封裝: -
庫存18,000
MOSFET (Metal Oxide)
40 V
64.6A (Ta), 100A (Tc)
4.5V, 10V
2.3V @ 250µA
204 nC @ 10 V
10500 pF @ 20 V
+20V, -16V
-
6.25W (Ta), 125W (Tc)
0.88mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8