頁 725 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  725/1,502
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數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPD50R399CP
Infineon Technologies

MOSFET N-CH 550V 9A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 330µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,936
MOSFET (Metal Oxide)
550V
9A (Tc)
10V
3.5V @ 330µA
23nC @ 10V
890pF @ 100V
±20V
-
83W (Tc)
399 mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRL3714STRRPBF
Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存9,444
MOSFET (Metal Oxide)
20V
36A (Tc)
4.5V, 10V
3V @ 250µA
9.7nC @ 4.5V
670pF @ 10V
±20V
-
47W (Tc)
20 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SPB80P06P
Infineon Technologies

MOSFET P-CH 60V 80A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 340W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存402,168
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 5.5mA
173nC @ 10V
5033pF @ 25V
±20V
-
340W (Tc)
23 mOhm @ 64A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SI4409DY-T1-E3
Vishay Siliconix

MOSFET P-CH 150V 1.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存375,240
MOSFET (Metal Oxide)
150V
1.3A (Tc)
6V, 10V
4V @ 250µA
12nC @ 10V
332pF @ 50V
±20V
-
2.2W (Ta), 4.6W (Tc)
1.2 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
RRH050P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 5A SOP8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 650mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存7,616
MOSFET (Metal Oxide)
30V
5A (Ta)
4V, 10V
2.5V @ 1mA
9.2nC @ 5V
850pF @ 10V
±20V
-
650mW (Ta)
50 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
2SK2866(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 10A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存3,728
MOSFET (Metal Oxide)
600V
10A (Ta)
10V
4V @ 1mA
45nC @ 10V
2040pF @ 10V
±30V
-
125W (Tc)
750 mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NTMS4N01R2G
ON Semiconductor

MOSFET N-CH 20V 3.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 770mW (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存7,536
MOSFET (Metal Oxide)
20V
3.3A (Ta)
2.5V, 4.5V
1.2V @ 250µA
16nC @ 4.5V
1200pF @ 10V
±10V
-
770mW (Ta)
40 mOhm @ 4.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
IRFSL7530PBF
Infineon Technologies

MOSFET N-CH 60V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存3,312
MOSFET (Metal Oxide)
60V
195A (Tc)
6V, 10V
3.7V @ 250µA
411nC @ 10V
13703pF @ 25V
±20V
-
375W (Tc)
2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
IPD100N06S403ATMA2
Infineon Technologies

MOSFET N-CH 60V 100A TO252-3-11

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,688
MOSFET (Metal Oxide)
60V
100A (Tc)
10V
4V @ 90µA
128nC @ 10V
10400pF @ 25V
±20V
-
150W (Tc)
3.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFR9024NTRL
Infineon Technologies

MOSFET P-CH 55V 11A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,008
MOSFET (Metal Oxide)
55V
11A (Tc)
10V
4V @ 250µA
19nC @ 10V
350pF @ 25V
±20V
-
38W (Tc)
175 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
MMIX1F44N100Q3
IXYS

MOSFET N-CH 1000V 30A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 245 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 24-SMPD
  • Package / Case: 24-PowerSMD, 21 Leads
封裝: 24-PowerSMD, 21 Leads
庫存2,080
MOSFET (Metal Oxide)
1000V
30A (Tc)
10V
6.5V @ 8mA
264nC @ 10V
13600pF @ 25V
±30V
-
694W (Tc)
245 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
IXFR75N10Q
IXYS

MOSFET N-CH 100V ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
封裝: ISOPLUS247?
庫存2,496
MOSFET (Metal Oxide)
100V
-
-
-
-
-
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
hot IRFB4620PBF
Infineon Technologies

MOSFET N-CH 200V 25A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 144W (Tc)
  • Rds On (Max) @ Id, Vgs: 72.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存36,504
MOSFET (Metal Oxide)
200V
25A (Tc)
10V
5V @ 100µA
38nC @ 10V
1710pF @ 50V
±20V
-
144W (Tc)
72.5 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDMS0300S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 31A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8705pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存3,600
MOSFET (Metal Oxide)
30V
31A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
133nC @ 10V
8705pF @ 15V
±20V
-
2.5W (Ta), 96W (Tc)
1.8 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
2N7002-TP
Micro Commercial Co

MOSFET N-CH 60V 0.115A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存137,970
MOSFET (Metal Oxide)
60V
115mA (Ta)
5V, 10V
2.5V @ 250µA
-
50pF @ 25V
-
-
200mW (Ta)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
PMH550UNEH
Nexperia USA Inc.

MOSFET N-CH 30V 770MA DFN0606-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN0606-3
  • Package / Case: 3-XFDFN
封裝: -
庫存109,755
MOSFET (Metal Oxide)
30 V
770mA (Ta)
1.5V, 4.5V
950mV @ 250µA
0.4 nC @ 4 V
30.3 pF @ 15 V
±8V
-
380mW (Ta), 2.8W (Tc)
670mOhm @ 770mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
SQS140ENW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 197W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK® 1212-8SLW
  • Package / Case: PowerPAK® 1212-8SLW
封裝: -
庫存4,470
MOSFET (Metal Oxide)
40 V
214A (Tc)
10V
3.5V @ 250µA
57 nC @ 10 V
3111 pF @ 25 V
±20V
-
197W (Tc)
2.53mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
IXTA110N055T2-TRL
IXYS

MOSFET N-CH 55V 110A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
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MOSFET (Metal Oxide)
55 V
110A (Tc)
10V
4V @ 250µA
57 nC @ 10 V
3060 pF @ 25 V
±20V
-
180W (Tc)
6.6mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GPI65060DFC
GaNPower

GaNFET N-CH 650V 60A DFN8x8 cu

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Drive Voltage (Max Rds On, Min Rds On): 6V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 400 V
  • Vgs (Max): +7.5V, -12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (8x8)
  • Package / Case: 8-DFN
封裝: -
Request a Quote
GaNFET (Gallium Nitride)
650 V
60A
6V
1.2V @ 3.5mA
16 nC @ 6 V
420 pF @ 400 V
+7.5V, -12V
-
-
30mOhm @ 6A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (8x8)
8-DFN
AIMW120R045M1XKSA1
Infineon Technologies

SICFET N-CH 1200V 52A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
  • Vgs (Max): +20V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 228W (Tc)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封裝: -
庫存690
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
-
5.7V @ 10mA
57 nC @ 15 V
2130 pF @ 800 V
+20V, -7V
-
228W (Tc)
59mOhm @ 20A, 15V
-40°C ~ 175°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
NVBG030N120M3S
onsemi

SILICON CARBIDE (SIC) MOSFET - E

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 348W (Tc)
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封裝: -
庫存2,340
SiC (Silicon Carbide Junction Transistor)
1200 V
77A (Tc)
18V
4.4V @ 15mA
107 nC @ 18 V
2430 pF @ 800 V
+22V, -10V
-
348W (Tc)
39mOhm @ 30A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NVTFS6H854NTAG
onsemi

MOSFET N-CH 80V 9.5A/44A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: -
庫存4,470
MOSFET (Metal Oxide)
80 V
9.5A (Ta), 44A (Tc)
10V
4V @ 45µA
13 nC @ 10 V
770 pF @ 40 V
±20V
-
3.2W (Ta), 68W (Tc)
14.5mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
2SJ266-DL-E
onsemi

PCH 4V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SI2310A
UMW

60V 3A 90MR@10V,3A 1.38W 3V@250A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.38W (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存8,418
MOSFET (Metal Oxide)
60 V
3A (Ta)
4.5V, 10V
3V @ 250µA
10 nC @ 4.5 V
780 pF @ 25 V
±20V
-
1.38W (Ta)
80mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
FCPF360N65S3R0L-F154
onsemi

POWER MOSFET, N-CHANNEL, SUPERFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存2,115
MOSFET (Metal Oxide)
650 V
10A (Tj)
10V
4.5V @ 200µA
18 nC @ 10 V
730 pF @ 400 V
±30V
-
27W (Tc)
360mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
FDS8449-F085
onsemi

MOSFET N-CH 40V 7.6A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: -
Request a Quote
MOSFET (Metal Oxide)
40 V
7.6A (Ta)
4.5V, 10V
3V @ 250µA
11 nC @ 10 V
760 pF @ 20 V
±20V
-
2.5W (Ta)
29mOhm @ 7.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
PJD7NA65_R2_00001
Panjit International Inc.

650V N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
MOSFET (Metal Oxide)
650 V
7A (Ta)
10V
4V @ 250µA
16.8 nC @ 10 V
754 pF @ 25 V
±30V
-
-
1.5Ohm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRL620A
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
200 V
5A (Tc)
5V
2V @ 250µA
15 nC @ 5 V
430 pF @ 25 V
±20V
-
39W (Tc)
800mOhm @ 2.5A, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3