圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 75A TO-263
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存396,264 |
|
MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 4V @ 94µA | 62nC @ 10V | 2100pF @ 30V | ±20V | - | 158W (Tc) | 11.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 73A TO-262
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存3,376 |
|
MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | ±20V | - | 190W (Tc) | 14 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存7,360 |
|
MOSFET (Metal Oxide) | 55V | 50A (Tc) | 10V | 4V @ 80µA | 52nC @ 10V | 1485pF @ 25V | ±20V | - | 136W (Tc) | 14.4 mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1000V 33A ISOPLUS227
|
封裝: SOT-227-4, miniBLOC |
庫存2,320 |
|
MOSFET (Metal Oxide) | 1000V | 33A | 10V | 5.5V @ 8mA | 455nC @ 10V | 15000pF @ 25V | ±20V | - | 580W (Tc) | 240 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 200V 158A ISOPLUS227
|
封裝: SOT-227-4, miniBLOC |
庫存2,640 |
|
MOSFET (Metal Oxide) | 200V | 158A | 10V | 4V @ 8mA | 380nC @ 10V | 14400pF @ 25V | ±20V | - | 500W (Tc) | 12 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET P-CH 200V 90A SOT227
|
封裝: SOT-227-4, miniBLOC |
庫存5,920 |
|
MOSFET (Metal Oxide) | 200V | 90A | 10V | 4V @ 1mA | 205nC @ 10V | 12000pF @ 25V | ±20V | - | 890W (Tc) | 44 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
ON Semiconductor |
MOSFET N-CH 60V D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存7,664 |
|
MOSFET (Metal Oxide) | 60V | 60A (Ta) | - | 4V @ 250µA | 81nC @ 10V | 3220pF @ 25V | - | - | 2.4W (Ta), 150W (Tj) | 14 mOhm @ 30A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V 312A SO8FL
|
封裝: 8-PowerTDFN |
庫存2,400 |
|
MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 2V @ 250µA | 143nC @ 10V | 8862pF @ 25V | ±20V | - | 3.8W (Ta), 167W (Tc) | 0.9 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存7,408 |
|
MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 500 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
CFET 3A / 500V
|
封裝: TO-220-3 |
庫存7,152 |
|
MOSFET (Metal Oxide) | 500V | 1.8A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 365pF @ 25V | ±30V | - | 62W (Tc) | 2.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4A TO220
|
封裝: TO-220-3 |
庫存14,892 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.1V @ 250µA | 6nC @ 10V | 263pF @ 100V | ±30V | - | 83W (Tc) | 900 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Diodes Incorporated |
MOSFET NCH 50V 500MA SOT23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存4,064 |
|
MOSFET (Metal Oxide) | 50V | 500mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 0.6nC @ 4.5V | 46pF @ 25V | ±20V | - | 370mW (Ta) | 1.6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存6,576 |
|
MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 4V @ 250µA | 19.4nC @ 10V | 685pF @ 100V | ±30V | - | 110W (Tc) | 1.2 Ohm @ 2.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 800V 12A I2PAKFP
|
封裝: TO-262-3 Full Pack, I2Pak |
庫存5,200 |
|
MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 5V @ 100µA | 22nC @ 10V | 620pF @ 100V | ±30V | - | 30W (Tc) | 445 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
||
IXYS |
MOSFET N-CH 300V 36A TO-3P
|
封裝: TO-3P-3, SC-65-3 |
庫存429,192 |
|
MOSFET (Metal Oxide) | 300V | 36A (Tc) | 10V | 5.5V @ 250µA | 70nC @ 10V | 2250pF @ 25V | ±30V | - | 300W (Tc) | 110 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 16A POWERPAK8X8
|
封裝: 8-PowerTDFN |
庫存3,584 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 250µA | 82nC @ 10V | 1416pF @ 100V | ±30V | - | 147W (Tc) | 255 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 1200V 12A TO-220FP
|
封裝: TO-220-3 Full Pack |
庫存18,876 |
|
MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 5V @ 100µA | 44.2nC @ 10V | 1370pF @ 100V | ±30V | - | 40W (Tc) | 690 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 200V 1.8A PPAK SO-8
|
封裝: PowerPAK? SO-8 |
庫存52,650 |
|
MOSFET (Metal Oxide) | 200V | 1.8A (Ta) | 6V, 10V | 4V @ 250µA | 18nC @ 10V | - | ±20V | - | 1.8W (Ta) | 240 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 25V 33A TDSON-8
|
封裝: 8-PowerTDFN |
庫存216,402 |
|
MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 39nC @ 10V | 2700pF @ 12V | ±20V | - | 2.5W (Ta), 74W (Tc) | 1.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 7.8A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存64,860 |
|
MOSFET (Metal Oxide) | 200V | 7.8A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 510pF @ 25V | ±30V | - | 50W (Tc) | 360 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Goford Semiconductor |
P-60V,-4A,RD(MAX)<110M@-10V,VTH-
|
封裝: - |
庫存5,868 |
|
MOSFET (Metal Oxide) | 60 V | 3A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 10 V | 1035 pF @ 30 V | ±20V | - | 1.5W (Tc) | 110mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6L | SOT-23-6 |
||
Micro Commercial Co |
Interface
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12 nC @ 10 V | 1100 pF @ 15 V | ±20V | - | 41W | 90mOhm @ 5A, 10V | -55°C ~ 150°C | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 1
|
封裝: - |
庫存15,723 |
|
MOSFET (Metal Oxide) | 20 V | 4.3A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 6.8 nC @ 4.5 V | 634 pF @ 10 V | ±8V | - | 800mW (Ta) | 45mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Qorvo |
1200V/23MO,SICFET,G4,TO263-7
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CHANNEL 60V 12A 8SOIC
|
封裝: - |
庫存29,388 |
|
MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 43 nC @ 10 V | 2096 pF @ 25 V | ±20V | - | 6.8W (Tc) | 19.8mOhm @ 6.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 800V 4.3A TO220AB
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 4V @ 250µA | 32 nC @ 10 V | 622 pF @ 100 V | ±30V | - | 69W (Tc) | 1.27Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 260A HDSOP-16-2
|
封裝: - |
庫存11,391 |
|
MOSFET (Metal Oxide) | 100 V | 260A (Tj) | 6V, 10V | 3.8V @ 210µA | 166 nC @ 10 V | 11830 pF @ 50 V | ±20V | - | 300W (Tc) | 1.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
||
Diodes Incorporated |
MOSFET BVDSS: 101V~250V POWERDI5
|
封裝: - |
Request a Quote |
|
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