頁 647 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  647/1,502
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封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFH7882TRPBF
Infineon Technologies

MOSFET N-CH 80V 26A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3186pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 195W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-VQFN
封裝: 8-VQFN
庫存4,720
MOSFET (Metal Oxide)
80V
26A (Ta)
10V
3.6V @ 250µA
74nC @ 10V
3186pF @ 40V
±20V
-
4W (Ta), 195W (Tc)
3.1 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
-
8-PQFN (5x6)
8-VQFN
SPB80N03S2L-03 G
Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,640
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2V @ 250µA
220nC @ 10V
8180pF @ 25V
±20V
-
300W (Tc)
2.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP82N04NUG-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 82A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 41A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存3,600
MOSFET (Metal Oxide)
40V
82A (Tc)
10V
4V @ 250µA
160nC @ 10V
9750pF @ 25V
±20V
-
1.8W (Ta), 143W (Tc)
4.2 mOhm @ 41A, 10V
175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
SI6404DQ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8.6A 8TSSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.08W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存7,872
MOSFET (Metal Oxide)
30V
8.6A (Ta)
2.5V, 10V
600mV @ 250µA
48nC @ 4.5V
-
±12V
-
1.08W (Ta)
9 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
IPT111N20NFDATMA1
Infineon Technologies

MV POWER MOS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存2,832
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AOW296
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存6,016
MOSFET (Metal Oxide)
100V
70A (Tc)
6V, 10V
3.4V @ 250µA
52nC @ 10V
2785pF @ 50V
±20V
-
104W (Tc)
9.7 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
hot SI4630DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 40A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存180,000
MOSFET (Metal Oxide)
25V
40A (Tc)
4.5V, 10V
2.2V @ 250µA
161nC @ 10V
6670pF @ 15V
±16V
-
3.5W (Ta), 7.8W (Tc)
2.7 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
NVMFS5C468NLT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存3,600
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2V @ 250µA
7.3nC @ 10V
570pF @ 25V
±20V
-
3.5W (Ta), 28W (Tc)
10.3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
SCH1337-TL-H
ON Semiconductor

MOSFET P-CH 30V 2A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
封裝: SOT-563, SOT-666
庫存7,776
MOSFET (Metal Oxide)
30V
2A (Ta)
4V, 10V
-
3.9nC @ 10V
172pF @ 10V
±20V
-
800mW (Ta)
150 mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
STL16N65M2
STMicroelectronics

MOSFET N-CH 650V 7.5A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 395 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
封裝: 8-PowerVDFN
庫存2,736
MOSFET (Metal Oxide)
650V
7.5A (Tc)
10V
4V @ 250µA
19.5nC @ 10V
718pF @ 100V
±25V
-
56W (Tc)
395 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
hot IRF9540NLPBF
Infineon Technologies

MOSFET P-CH 100V 23A TO262-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存15,600
MOSFET (Metal Oxide)
100V
23A (Tc)
10V
4V @ 250µA
110nC @ 10V
1450pF @ 25V
±20V
-
3.1W (Ta), 110W (Tc)
117 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
HUF75321P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 35A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存18,516
MOSFET (Metal Oxide)
55V
35A (Tc)
10V
4V @ 250µA
44nC @ 20V
680pF @ 25V
±20V
-
93W (Tc)
34 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BBL4001-1E
ON Semiconductor

MOSFET N-CH 60V 74A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 37A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存7,044
MOSFET (Metal Oxide)
60V
74A (Ta)
4V, 10V
2.6V @ 1mA
135nC @ 10V
6900pF @ 20V
±20V
-
2W (Ta), 35W (Tc)
6.1 mOhm @ 37A, 10V
150°C (TJ)
Through Hole
TO-220-3 Fullpack/TO-220F-3SG
TO-220-3 Full Pack
PSMN3R0-30YLDX
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2939pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封裝: SC-100, SOT-669
庫存7,920
MOSFET (Metal Oxide)
30V
100A (Tc)
4.5V, 10V
2.2V @ 1mA
46.4nC @ 10V
2939pF @ 15V
±20V
-
91W (Tc)
3.1 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
hot FQU1N80TU
Fairchild/ON Semiconductor

MOSFET N-CH 800V 1A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存116,388
MOSFET (Metal Oxide)
800V
1A (Tc)
10V
5V @ 250µA
7.2nC @ 10V
195pF @ 25V
±30V
-
2.5W (Ta), 45W (Tc)
20 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot RF6E045AJTCR
Rohm Semiconductor

NCH 30V 4.5A MIDDLE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 23.7 mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
封裝: 6-SMD, Flat Leads
庫存36,000
MOSFET (Metal Oxide)
30V
4.5A (Ta)
4.5V
1.5V @ 1mA
8.1nC @ 4.5V
900pF @ 15V
±12V
-
1W (Tc)
23.7 mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
hot IRLL3303PBF
Infineon Technologies

MOSFET N-CH 30V 4.6A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存13,308
MOSFET (Metal Oxide)
30V
4.6A (Ta)
4.5V, 10V
1V @ 250µA
50nC @ 10V
840pF @ 25V
±16V
-
1W (Ta)
31 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot STD9NM40N
STMicroelectronics

MOSFET N-CH 400V 5.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存52,176
MOSFET (Metal Oxide)
400V
5.6A (Tc)
10V
4V @ 250µA
14nC @ 10V
365pF @ 50V
±25V
-
60W (Tc)
790 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ097N04LS G
Infineon Technologies

MOSFET N-CH 40V 40A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 14µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存578,658
MOSFET (Metal Oxide)
40V
12A (Ta), 40A (Tc)
4.5V, 10V
2V @ 14µA
24nC @ 10V
1900pF @ 20V
±20V
-
2.1W (Ta), 35W (Tc)
9.7 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
hot DMN601K-7
Diodes Incorporated

MOSFET N-CH 60V 300MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,214,652
MOSFET (Metal Oxide)
60V
300mA (Ta)
5V, 10V
2.5V @ 1mA
-
50pF @ 25V
±20V
-
350mW (Ta)
2 Ohm @ 500mA, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
RSJ451N04FRATL
Rohm Semiconductor

MOSFET N-CH 40V 45A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存2,400
MOSFET (Metal Oxide)
40 V
45A (Tc)
10V
3V @ 1mA
43 nC @ 10 V
2400 pF @ 25 V
±20V
-
50W (Tc)
13.5mOhm @ 25A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVH4L020N120SC1
onsemi

SICFET N-CH 1200V 102A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
  • Vgs (Max): +25V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 510W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封裝: -
庫存2,898
SiCFET (Silicon Carbide)
1200 V
102A (Tc)
20V
4.3V @ 20mA
220 nC @ 20 V
2943 pF @ 800 V
+25V, -15V
-
510W (Tc)
28mOhm @ 60A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
RJK60S5DPE-00-J3
Renesas Electronics Corporation

MOSFET N-CH 600V 20A 4LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LDPAK
  • Package / Case: SC-83
封裝: -
Request a Quote
MOSFET (Metal Oxide)
600 V
20A (Tc)
-
-
27 nC @ 10 V
1600 pF @ 25 V
-
-
125W (Tc)
178mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
LDPAK
SC-83
MSC090SMA070S
Microchip Technology

SICFET N-CH 700V D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封裝: -
庫存309
SiCFET (Silicon Carbide)
700 V
25A (Tc)
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
FQD9N25TM-SBEK002
onsemi

MOSFET N-CH 250V 7.4A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
MOSFET (Metal Oxide)
250 V
7.4A (Tc)
10V
5V @ 250µA
20 nC @ 10 V
700 pF @ 25 V
±30V
-
2.5W (Ta), 55W (Tc)
420mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SI4425FDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 12.7/18.3A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
  • Vgs (Max): +16V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: -
庫存37,623
MOSFET (Metal Oxide)
30 V
12.7A (Ta), 18.3A (Tc)
4.5V, 10V
2.2V @ 250µA
41 nC @ 10 V
1620 pF @ 15 V
+16V, -20V
-
2.3W (Ta), 4.8W (Tc)
9.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SICW040N120Y-BP
Micro Commercial Co

SCHOTTKY DIODES

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2225 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AB
  • Package / Case: TO-247-3
封裝: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
1200 V
63A (Tc)
20V
3.5V @ 10mA
120 nC @ 20 V
2225 pF @ 1000 V
+25V, -10V
-
390W (Tc)
52mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AB
TO-247-3
IRFR9024TRPBF-BE3
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存10,494
MOSFET (Metal Oxide)
60 V
8.8A (Tc)
10V
4V @ 250µA
19 nC @ 10 V
570 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
280mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63