頁 474 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559-836
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

電晶體 - FET、MOSFET - 單

記錄 42,029
頁  474/1,502
圖片
零件編號
製造商
描述
封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPU20N03L G
Infineon Technologies

MOSFET N-CH 30V 30A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: P-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存3,440
MOSFET (Metal Oxide)
30V
30A (Tc)
4.5V, 10V
2V @ 25µA
11nC @ 5V
700pF @ 25V
±20V
-
60W (Tc)
20 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
P-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
hot AON6410
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 24A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1452pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
封裝: 8-PowerSMD, Flat Leads
庫存129,876
MOSFET (Metal Oxide)
30V
10A (Ta), 24A (Tc)
4.5V, 10V
2.5V @ 250µA
28nC @ 10V
1452pF @ 15V
±12V
-
2W (Ta), 35W (Tc)
12 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
hot NTD4808NT4G
ON Semiconductor

MOSFET N-CH 30V 9.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1538pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存147,480
MOSFET (Metal Oxide)
30V
10A (Ta), 63A (Tc)
4.5V, 11.5V
2.5V @ 250µA
13nC @ 4.5V
1538pF @ 12V
±20V
-
1.4W (Ta), 54.6W (Tc)
8 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
PHP32N06LT,127
NXP

MOSFET N-CH 60V 34A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 97W (Tc)
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存3,248
MOSFET (Metal Oxide)
60V
34A (Tc)
4.5V, 10V
2V @ 1mA
17nC @ 5V
1280pF @ 25V
±15V
-
97W (Tc)
37 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRLW510ATM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.6A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.8A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存5,552
MOSFET (Metal Oxide)
100V
5.6A (Tc)
5V
2V @ 250µA
8nC @ 5V
235pF @ 25V
±20V
-
3.8W (Ta), 37W (Tc)
440 mOhm @ 2.8A, 5V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRF740S
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存16,560
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
4V @ 250µA
63nC @ 10V
1400pF @ 25V
±20V
-
3.1W (Ta), 125W (Tc)
550 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP76N25T
IXYS

MOSFET N-CH 250V 76A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存2,576
MOSFET (Metal Oxide)
250V
76A (Tc)
10V
5V @ 1mA
92nC @ 10V
4500pF @ 25V
±30V
-
460W (Tc)
39 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TK12E60W,S1VX
Toshiba Semiconductor and Storage

MOSFET N CH 600V 11.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存3,488
MOSFET (Metal Oxide)
600V
11.5A (Ta)
10V
3.7V @ 600µA
25nC @ 10V
890pF @ 300V
±30V
Super Junction
110W (Tc)
300 mOhm @ 5.8A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
hot IRFZ48RPBF
Vishay Siliconix

MOSFET N-CH 60V 50A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存17,712
MOSFET (Metal Oxide)
60V
50A (Tc)
10V
4V @ 250µA
110nC @ 10V
2400pF @ 25V
±20V
-
190W (Tc)
18 mOhm @ 43A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TSM2N100CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存5,408
MOSFET (Metal Oxide)
1000V
1.85A (Tc)
10V
5.5V @ 250µA
17nC @ 10V
625pF @ 25V
±30V
-
77W (Tc)
8.5 Ohm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
STD20NF06LAG
STMicroelectronics

MOSFET N-CH 60V 20A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,760
MOSFET (Metal Oxide)
60V
20A
5V, 10V
-
12nC @ 10V
-
-
-
-
-
-
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
AOB20S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存4,512
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4.1V @ 250µA
19.8nC @ 10V
1038pF @ 100V
±30V
-
266W (Tc)
199 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SSM3K7002BS,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 200MA SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存36,000
MOSFET (Metal Oxide)
60V
200mA (Ta)
4.5V, 10V
2.5V @ 250µA
-
17pF @ 25V
±20V
-
200mW (Ta)
2.1 Ohm @ 500mA, 10V
150°C (TJ)
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
TPN1600ANH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 100V 17A 8TSON-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封裝: 8-PowerVDFN
庫存6,608
MOSFET (Metal Oxide)
100V
17A (Tc)
10V
4V @ 200µA
19nC @ 10V
1600pF @ 50V
±20V
-
700mW (Ta), 42W (Tc)
16 mOhm @ 8.5A, 10V
150°C (TJ)
Surface Mount
8-TSON Advance (3.3x3.3)
8-PowerVDFN
SQD15N06-42L_GE3
Vishay Siliconix

MOSFET N-CH 60V 15A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,472
MOSFET (Metal Oxide)
60V
15A (Tc)
4.5V, 10V
2.5V @ 250µA
15nC @ 10V
535pF @ 25V
±20V
-
37W (Tc)
42 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
ZVP3310A
Diodes Incorporated

MOSFET P-CH 100V 0.14A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存34,068
MOSFET (Metal Oxide)
100V
140mA (Ta)
10V
3.5V @ 1mA
-
50pF @ 25V
±20V
-
625mW (Ta)
20 Ohm @ 150mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
PXN5R4-30QLJ
Nexperia USA Inc.

PXN5R4-30QL/SOT8002/MLPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MLPAK33
  • Package / Case: 8-PowerVDFN
封裝: -
庫存104,697
MOSFET (Metal Oxide)
30 V
14A (Ta), 66A (Tc)
4.5V, 10V
2.5V @ 250µA
36.3 nC @ 10 V
1600 pF @ 15 V
±20V
-
1.8W (Ta), 39W (Tc)
5.4mOhm @ 14.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
MLPAK33
8-PowerVDFN
PJD18N20_L2_00001
Panjit International Inc.

200V N-CHANNEL ENHANCEMENT MODE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存26,145
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
3V @ 250µA
24 nC @ 10 V
1017 pF @ 25 V
±20V
-
83W (Tc)
160mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
AONR66820
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 17A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN-EP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
80 V
17A (Ta), 50A (Tc)
8V, 10V
4.1V @ 250µA
50 nC @ 10 V
1950 pF @ 40 V
±20V
-
4.1W (Ta), 104W (Tc)
8.8mOhm @ 17A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3.3x3.3)
8-PowerWDFN
G3R350MT12J-TR
GeneSiC Semiconductor

1200V 350M TO-263-7 G3R SIC MOSF

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 64W (Tc)
  • Rds On (Max) @ Id, Vgs: 395mOhm @ 4A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封裝: -
庫存2,310
SiC (Silicon Carbide Junction Transistor)
1200 V
10A (Tc)
15V, 18V
2.7V @ 2mA
10 nC @ 15 V
331 pF @ 800 V
+22V, -10V
-
64W (Tc)
395mOhm @ 4A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
STD13N50DM2AG
STMicroelectronics

POWER TRANSISTORS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
11A (Tc)
-
-
-
-
±25V
-
-
-
-
-
-
-
PMPB43XPEAX
Nexperia USA Inc.

MOSFET P-CH 20V 5A DFN2020MD-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
封裝: -
庫存8,400
MOSFET (Metal Oxide)
20 V
5A (Ta)
1.8V, 4.5V
1V @ 250µA
23.4 nC @ 4.5 V
1550 pF @ 10 V
±12V
-
1.7W (Ta), 12.5W (Tc)
48mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
DMNH6008SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2597 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
16.5A (Ta), 88A (Tc)
10V
4V @ 250µA
40.1 nC @ 10 V
2597 pF @ 30 V
±20V
-
1.6W
8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
IRF7494TR
Infineon Technologies

MOSFET N-CH 150V 5.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: -
Request a Quote
MOSFET (Metal Oxide)
150 V
5.2A (Ta)
-
4V @ 250µA
54 nC @ 10 V
1750 pF @ 25 V
-
-
-
44mOhm @ 3.1A, 10V
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
GC20N65QD
Goford Semiconductor

MOSFET N-CH 650V 20A TO-247

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-247-3
  • Package / Case: -
封裝: -
庫存90
MOSFET (Metal Oxide)
-
20A (Tc)
10V
5V @ 250µA
39 nC @ 10 V
1729 pF @ 400 V
±30V
-
-
190mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-247-3
-
BSM180C12P3C202
Rohm Semiconductor

SICFET N-CH 1200V 180A MODULE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.6V @ 50mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 10 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 880W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: Module
  • Package / Case: Module
封裝: -
庫存30
SiCFET (Silicon Carbide)
1200 V
180A (Tc)
-
5.6V @ 50mA
-
9000 pF @ 10 V
+22V, -4V
-
880W (Tc)
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
IPT039N15N5XTMA1
Infineon Technologies

TRENCH >=100V PG-HSOF-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 257µA
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 319W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
150 V
190A (Tc)
8V, 10V
4.6V @ 257µA
98 nC @ 10 V
7700 pF @ 75 V
±20V
-
319W (Tc)
3.9mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
IPP013N04NF2SAKMA1
Infineon Technologies

TRENCH PG-TO220-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存3,000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-