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IRL3103STRR

Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存37,932

MOSFET (Metal Oxide)

30V

64A (Tc)

4.5V, 10V

1V @ 250µA

33nC @ 4.5V

1650pF @ 25V

±16V

-

94W (Tc)

12 mOhm @ 34A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT1001R1BN

Microsemi Corporation

MOSFET N-CH 1KV 10.5A TO247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5.25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3

封裝: TO-247-3

庫存123,876

MOSFET (Metal Oxide)

1000V

10.5A (Tc)

10V

4V @ 1mA

130nC @ 10V

2950pF @ 25V

±30V

-

310W (Tc)

1.1 Ohm @ 5.25A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247AD

TO-247-3

ATP405-TL-HX

ON Semiconductor

MOSFET N-CH DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存2,992

-

10V

-

±20V

-

2SK3844(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220NIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 23A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220NIS
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存77,400

MOSFET (Metal Oxide)

60V

45A (Ta)

10V

4V @ 1mA

196nC @ 10V

12400pF @ 10V

±20V

-

45W (Tc)

5.8 mOhm @ 23A, 10V

150°C (TJ)

Through Hole

TO-220NIS

TO-220-3 Full Pack

IXTA8PN50P

IXYS

MOSFET N-CH 500V 8A D2-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,880

MOSFET (Metal Oxide)

500V

8A (Tc)

-

Surface Mount

TO-263 (IXTA)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NTD85N02R-001

ON Semiconductor

MOSFET N-CH 24V 12A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

庫存107,100

MOSFET (Metal Oxide)

24V

12A (Ta), 85A (Tc)

4.5V, 10V

2V @ 250µA

17.7nC @ 5V

2050pF @ 20V

±20V

-

1.25W (Ta), 78.1W (Tc)

5.2 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

CSD19506KTTT

Texas Instruments

IC MOSFET N-CH 80V TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DDPAK/TO-263-3
Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

封裝: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

庫存4,752

MOSFET (Metal Oxide)

80V

200A (Ta)

6V, 10V

3.2V @ 250µA

156nC @ 10V

12200pF @ 40V

±20V

-

375W (Tc)

2.3 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DDPAK/TO-263-3

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

NTTFS4C55NTWG

ON Semiconductor

MOSFET N-CH 30V 75A U8FL

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN

封裝: 8-PowerWDFN

庫存7,312

-

Surface Mount

8-WDFN (3.3x3.3)

8-PowerWDFN

BUK7M17-80EX

Nexperia USA Inc.

MOSFET N-CH 80V MLFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 43A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2031pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK33
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

封裝: SOT-1210, 8-LFPAK33 (5-Lead)

庫存4,304

MOSFET (Metal Oxide)

80V

43A

10V

4V @ 1mA

29.6nC @ 10V

2031pF @ 25V

±20V

-

79W (Tc)

17 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK33

SOT-1210, 8-LFPAK33 (5-Lead)

APT19F100J

Microsemi Corporation

MOSFET N-CH 1000V 20A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 20A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 440 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP?
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存6,240

MOSFET (Metal Oxide)

1000V

20A

10V

5V @ 2.5mA

260nC @ 10V

8500pF @ 25V

±30V

-

460W (Tc)

440 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

ISOTOP?

SOT-227-4, miniBLOC

IPD50R500CEBTMA1

Infineon Technologies

MOSFET N-CH 500V 7.6A PG-TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存2,160

MOSFET (Metal Oxide)

500V

7.6A (Tc)

13V

3.5V @ 200µA

18.7nC @ 10V

433pF @ 100V

±20V

Super Junction

57W (Tc)

500 mOhm @ 2.3A, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

STS26N3LLH6

STMicroelectronics

MOSFET N-CH 30V 26A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存11,076

MOSFET (Metal Oxide)

30V

26A (Tc)

4.5V, 10V

1V @ 250µA

40nC @ 4.5V

4040pF @ 25V

±20V

-

2.7W (Ta)

4.4 mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

CSD18502KCS

Texas Instruments

MOSFET N-CH 40V 100A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 259W (Tc)
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存104,340

MOSFET (Metal Oxide)

40V

100A (Tc)

4.5V, 10V

2.1V @ 250µA

62nC @ 10V

4680pF @ 20V

±20V

-

259W (Tc)

2.9 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

IPB011N04L G

Infineon Technologies

MOSFET N-CH 40V 180A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 346nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 29000pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

封裝: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

庫存6,132

MOSFET (Metal Oxide)

40V

180A (Tc)

4.5V, 10V

2V @ 200µA

346nC @ 10V

29000pF @ 20V

±20V

-

250W (Tc)

1.1 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

CDM2208-800FP-SL-PBFREE

Central Semiconductor Corp

MOSFET N-CH 800V 8A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Vgs (Max): 30V
FET Feature: -
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack

封裝: -

Request a Quote

MOSFET (Metal Oxide)

800 V

8A (Tc)

10V

4V @ 250µA

24.45 nC @ 10 V

1110 pF @ 25 V

30V

-

57W (Tc)

1.6Ohm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FP

TO-220-3 Full Pack

IPS70N10S3L-12

Infineon Technologies

MOSFET N-CH 1TO251-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

TW030N120C-S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 30MO

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 13mA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 249W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: -

庫存90

SiCFET (Silicon Carbide)

1200 V

60A (Tc)

18V

5V @ 13mA

82 nC @ 18 V

2925 pF @ 800 V

+25V, -10V

-

249W (Tc)

40mOhm @ 30A, 18V

175°C

Through Hole

TO-247

TO-247-3

NTMFSC1D0N04HL

onsemi

T8 40V LOW COSS DFN8 5X6 DUAL CO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 288A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6.15)
Package / Case: 8-PowerVDFN

封裝: -

Request a Quote

MOSFET (Metal Oxide)

40 V

43A (Ta), 288A (Tc)

4.5V, 10V

2V @ 250µA

93 nC @ 10 V

5960 pF @ 20 V

±20V

-

3.8W (Ta), 166W (Tc)

1mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-DFN (5x6.15)

8-PowerVDFN

TK4K1A60F-S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封裝: -

庫存219

MOSFET (Metal Oxide)

600 V

2A (Ta)

10V

4V @ 190µA

8 nC @ 10 V

270 pF @ 300 V

±30V

-

30W (Tc)

4.1Ohm @ 1A, 10V

150°C

Through Hole

TO-220SIS

TO-220-3 Full Pack

2SJ599-0-Z-E2-AZ

Renesas Electronics Corporation

TRANSISTOR

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

20A (Tc)

-

IMW65R007M2HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

2SJ645-E

onsemi

P-CHANNEL SMALL SIGNAL MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

MCH5815-TL-E-ON

onsemi

MOSFET P-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

2SJ645-TL-E

onsemi

MOSFET P-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

SQS482EN-T1_BE3

Vishay Siliconix

N-CHANNEL 30-V (D-S) 175C MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8

封裝: -

Request a Quote

MOSFET (Metal Oxide)

30 V

16A (Tc)

4.5V, 10V

2.5V @ 250µA

39 nC @ 10 V

1865 pF @ 25 V

±20V

-

62W (Tc)

8.5mOhm @ 16.4A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 1212-8

IXTC110N055T

IXYS

MOSFET N-CH ISOPLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

AOTF600A70FL

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 8.5A TO220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封裝: -

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MOSFET (Metal Oxide)

700 V

8.5A (Tj)

10V

4V @ 250µA

14.5 nC @ 10 V

900 pF @ 100 V

±20V

-

26W (Tc)

600mOhm @ 2.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

SSFB2310L

Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 9.9A, 20V,

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 2.01W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-DFN (2x2)
Package / Case: 6-UDFN Exposed Pad

封裝: -

庫存18,000

MOSFET (Metal Oxide)

20 V

9.9A (Ta)

1.8V, 4.5V

1V @ 250µA

26 nC @ 4.5 V

1480 pF @ 10 V

±10V

-

2.01W (Ta)

13mOhm @ 5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-DFN (2x2)

6-UDFN Exposed Pad

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3103STRR	Infineon Technologies	MOSFET N-CH 30V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存37,932	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	33nC @ 4.5V	1650pF @ 25V	±16V	-	94W (Tc)	12 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT1001R1BN	Microsemi Corporation	MOSFET N-CH 1KV 10.5A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	封裝: TO-247-3	庫存123,876	MOSFET (Metal Oxide)	1000V	10.5A (Tc)	10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	±30V	-	310W (Tc)	1.1 Ohm @ 5.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
ATP405-TL-HX	ON Semiconductor	MOSFET N-CH DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存2,992	-	-	-	10V	-	-	-	±20V	-	-	-	-	-	-	-
2SK3844(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 45A TO220NIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存77,400	MOSFET (Metal Oxide)	60V	45A (Ta)	10V	4V @ 1mA	196nC @ 10V	12400pF @ 10V	±20V	-	45W (Tc)	5.8 mOhm @ 23A, 10V	150°C (TJ)	Through Hole	TO-220NIS	TO-220-3 Full Pack
IXTA8PN50P	IXYS	MOSFET N-CH 500V 8A D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,880	MOSFET (Metal Oxide)	500V	8A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD85N02R-001	ON Semiconductor	MOSFET N-CH 24V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封裝: TO-251-3 Short Leads, IPak, TO-251AA	庫存107,100	MOSFET (Metal Oxide)	24V	12A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	17.7nC @ 5V	2050pF @ 20V	±20V	-	1.25W (Ta), 78.1W (Tc)	5.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
CSD19506KTTT	Texas Instruments	IC MOSFET N-CH 80V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	封裝: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	庫存4,752	MOSFET (Metal Oxide)	80V	200A (Ta)	6V, 10V	3.2V @ 250µA	156nC @ 10V	12200pF @ 40V	±20V	-	375W (Tc)	2.3 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DDPAK/TO-263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
NTTFS4C55NTWG	ON Semiconductor	MOSFET N-CH 30V 75A U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	封裝: 8-PowerWDFN	庫存7,312	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
BUK7M17-80EX	Nexperia USA Inc.	MOSFET N-CH 80V MLFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 43A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2031pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	封裝: SOT-1210, 8-LFPAK33 (5-Lead)	庫存4,304	MOSFET (Metal Oxide)	80V	43A	10V	4V @ 1mA	29.6nC @ 10V	2031pF @ 25V	±20V	-	79W (Tc)	17 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
APT19F100J	Microsemi Corporation	MOSFET N-CH 1000V 20A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	封裝: SOT-227-4, miniBLOC	庫存6,240	MOSFET (Metal Oxide)	1000V	20A	10V	5V @ 2.5mA	260nC @ 10V	8500pF @ 25V	±30V	-	460W (Tc)	440 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
IPD50R500CEBTMA1	Infineon Technologies	MOSFET N-CH 500V 7.6A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存2,160	MOSFET (Metal Oxide)	500V	7.6A (Tc)	13V	3.5V @ 200µA	18.7nC @ 10V	433pF @ 100V	±20V	Super Junction	57W (Tc)	500 mOhm @ 2.3A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
STS26N3LLH6	STMicroelectronics	MOSFET N-CH 30V 26A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存11,076	MOSFET (Metal Oxide)	30V	26A (Tc)	4.5V, 10V	1V @ 250µA	40nC @ 4.5V	4040pF @ 25V	±20V	-	2.7W (Ta)	4.4 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
CSD18502KCS	Texas Instruments	MOSFET N-CH 40V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 259W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存104,340	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2.1V @ 250µA	62nC @ 10V	4680pF @ 20V	±20V	-	259W (Tc)	2.9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPB011N04L G	Infineon Technologies	MOSFET N-CH 40V 180A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 346nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 29000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	封裝: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	庫存6,132	MOSFET (Metal Oxide)	40V	180A (Tc)	4.5V, 10V	2V @ 200µA	346nC @ 10V	29000pF @ 20V	±20V	-	250W (Tc)	1.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
CDM2208-800FP-SL-PBFREE	Central Semiconductor Corp	MOSFET N-CH 800V 8A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	封裝: -	Request a Quote	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	4V @ 250µA	24.45 nC @ 10 V	1110 pF @ 25 V	30V	-	57W (Tc)	1.6Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPS70N10S3L-12	Infineon Technologies	MOSFET N-CH 1TO251-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TW030N120C-S1F	Toshiba Semiconductor and Storage	G3 1200V SIC-MOSFET TO-247 30MO FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 13mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 249W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封裝: -	庫存90	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	5V @ 13mA	82 nC @ 18 V	2925 pF @ 800 V	+25V, -10V	-	249W (Tc)	40mOhm @ 30A, 18V	175°C	Through Hole	TO-247	TO-247-3
NTMFSC1D0N04HL	onsemi	T8 40V LOW COSS DFN8 5X6 DUAL CO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 288A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6.15) Package / Case: 8-PowerVDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	43A (Ta), 288A (Tc)	4.5V, 10V	2V @ 250µA	93 nC @ 10 V	5960 pF @ 20 V	±20V	-	3.8W (Ta), 166W (Tc)	1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFN (5x6.15)	8-PowerVDFN
TK4K1A60F-S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封裝: -	庫存219	MOSFET (Metal Oxide)	600 V	2A (Ta)	10V	4V @ 190µA	8 nC @ 10 V	270 pF @ 300 V	±30V	-	30W (Tc)	4.1Ohm @ 1A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
2SJ599-0-Z-E2-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	20A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
IMW65R007M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ645-E	onsemi	P-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCH5815-TL-E-ON	onsemi	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ645-TL-E	onsemi	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQS482EN-T1_BE3	Vishay Siliconix	N-CHANNEL 30-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	39 nC @ 10 V	1865 pF @ 25 V	±20V	-	62W (Tc)	8.5mOhm @ 16.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
IXTC110N055T	IXYS	MOSFET N-CH ISOPLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOTF600A70FL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 8.5A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	封裝: -	Request a Quote	MOSFET (Metal Oxide)	700 V	8.5A (Tj)	10V	4V @ 250µA	14.5 nC @ 10 V	900 pF @ 100 V	±20V	-	26W (Tc)	600mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SSFB2310L	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 9.9A, 20V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.01W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN (2x2) Package / Case: 6-UDFN Exposed Pad	封裝: -	庫存18,000	MOSFET (Metal Oxide)	20 V	9.9A (Ta)	1.8V, 4.5V	1V @ 250µA	26 nC @ 4.5 V	1480 pF @ 10 V	±10V	-	2.01W (Ta)	13mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN (2x2)	6-UDFN Exposed Pad