圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 55A I-PAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存2,064 |
|
MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | ±16V | - | 107W (Tc) | 19 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 30V 7A SO-8FL
|
封裝: 8-PowerTDFN, 5 Leads |
庫存40,392 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 11.5V | 2.5V @ 250µA | 17nC @ 4.5V | 1300pF @ 12V | ±20V | - | 880mW (Ta), 47.2W (Tc) | 7.6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 59A TO-220AB
|
封裝: TO-220-3 |
庫存4,896 |
|
MOSFET (Metal Oxide) | 60V | 59A (Tc) | 4.5V, 10V | 3V @ 250µA | 53nC @ 10V | 1765pF @ 25V | ±16V | - | 130W (Tc) | 17 mOhm @ 59A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 13A D-PAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存13,536 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 24nC @ 5V | 1715pF @ 15V | ±16V | - | 3.8W (Ta), 52W (Tc) | 8 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存38,400 |
|
MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | - | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存120,012 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 67nC @ 10V | 1900pF @ 25V | ±20V | - | 3.7W (Ta), 150W (Tc) | 28 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 620V 2.5A TO220
|
封裝: TO-220-3 |
庫存7,216 |
|
MOSFET (Metal Oxide) | 620V | 2.5A (Tc) | 10V | 4.5V @ 50µA | 17nC @ 10V | 386pF @ 50V | ±30V | - | 45W (Tc) | 3 Ohm @ 1.25A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH TDSON-8
|
封裝: 8-PowerTDFN |
庫存2,240 |
|
MOSFET (Metal Oxide) | 150V | 76A (Tc) | 8V, 10V | 4.6V @ 91µA | 35nC @ 10V | 2770pF @ 75V | ±20V | - | 125W (Tc) | 11 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 800V 27A SOT-227B
|
封裝: SOT-227-4, miniBLOC |
庫存5,568 |
|
MOSFET (Metal Oxide) | 800V | 27A | 10V | 4.5V @ 4mA | 170nC @ 10V | 7600pF @ 25V | ±20V | - | 520W (Tc) | 320 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 75V 230A TO-263
|
封裝: TO-263-7, D2Pak (6 Leads + Tab) |
庫存5,504 |
|
MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4V @ 250µA | 178nC @ 10V | 10500pF @ 25V | ±20V | - | 480W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
||
Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3
|
封裝: TO-226-3, TO-92-3 (TO-226AA) |
庫存5,216 |
|
MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 740mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Diodes Incorporated |
MOSFET N-CH 20V 10.5A U-DFN
|
封裝: 6-UDFN Exposed Pad |
庫存2,080 |
|
MOSFET (Metal Oxide) | 20V | 10.5A (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | 25.8nC @ 8V | 2453pF @ 10V | ±8V | - | 660mW (Ta) | 11 mOhm @ 8.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET N CH 650V 4A TO220-3
|
封裝: TO-220-3 |
庫存6,540 |
|
MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 5V @ 250µA | 13.5nC @ 10V | 900pF @ 25V | ±30V | - | 2.19W (Ta) | 3 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 2.85A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存227,268 |
|
MOSFET (Metal Oxide) | 200V | 2.85A (Ta) | 6V, 10V | 2V @ 250µA (Min) | 42nC @ 10V | - | ±20V | - | 1.56W (Ta) | 80 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 30V 19.3A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存546,816 |
|
MOSFET (Metal Oxide) | 30V | 19.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 30nC @ 10V | 1155pF @ 15V | ±20V | - | 2.5W (Ta), 5W (Tc) | 7.9 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 30V 19.7A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存453,720 |
|
MOSFET (Metal Oxide) | 30V | 19.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 80nC @ 10V | 2610pF @ 15V | ±20V | - | 2.5W (Ta), 5.7W (Tc) | 9.8 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 400V 5.6A TO220
|
封裝: TO-220-3 |
庫存19,884 |
|
MOSFET (Metal Oxide) | 400V | 5.6A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 365pF @ 50V | ±25V | - | 60W (Tc) | 790 mOhm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2.5A TSM
|
封裝: SOT-23-3 Flat Leads |
庫存50,856 |
|
MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4.5V, 10V | 2.8V @ 1mA | 7nC @ 10V | 235pF @ 30V | ±20V | - | 1W (Ta) | 107 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
||
Vishay Siliconix |
MOSFET N-CHANNEL 40V 19A 8SOIC
|
封裝: - |
庫存14,196 |
|
MOSFET (Metal Oxide) | 40 V | 19A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 51 nC @ 10 V | 2406 pF @ 20 V | ±20V | - | 6W (Tc) | 8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
N-CHANNEL POWER MOSFET
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
SINGLE N-CHANNEL POWER MOSFET 10
|
封裝: - |
庫存8,850 |
|
MOSFET (Metal Oxide) | 100 V | 36A (Ta), 273A (Tc) | 10V | 4V @ 650µA | 106 nC @ 10 V | 7630 pF @ 50 V | ±20V | - | 5W (Ta), 291W (Tc) | 1.7mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
||
Diotec Semiconductor |
MOSFET POWERQFN 2X2 P -20V -6A 0
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 13 nC @ 4.5 V | 1242 pF @ 10 V | ±12V | - | 2W (Tc) | 25mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (2x2) | 8-PowerUDFN |
||
Infineon Technologies |
MOSFET N-CH 150V 13A 8TSDSON
|
封裝: - |
庫存41,277 |
|
MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 8V, 10V | 4V @ 20µA | 7 nC @ 10 V | 510 pF @ 75 V | ±20V | - | 38W (Tc) | 90mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -5.8A, -20
|
封裝: - |
庫存17,895 |
|
MOSFET (Metal Oxide) | 20 V | 5.8A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 25 nC @ 4.5 V | 2100 pF @ 15 V | ±10V | - | 1.56W (Tc) | 33mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
N-CHANNEL 650 V, 39 MOHM TYP., 5
|
封裝: - |
庫存300 |
|
MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 4.2V @ 250µA | 80 nC @ 10 V | 4610 pF @ 400 V | ±30V | - | 312W (Tc) | 45mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
onsemi |
N-CHANNEL SILICON MOSFET
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
SCHOTTKY DIODES
|
封裝: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 80A (Tc) | 16V, 20V | 3V @ 15mA | 168 nC @ 18 V | 3570 pF @ 1000 V | +22V, -5V | - | 375W (Tc) | 30mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
|
封裝: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 650 V | 54A (Tc) | 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | 1393 pF @ 400 V | +23V, -5V | - | 211W (Tc) | 51mOhm @ 25A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |