圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 43A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存5,424 |
|
MOSFET (Metal Oxide) | 30V | 43A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | ±20V | - | 40W (Tc) | 13.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 28V 11A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存6,064 |
|
MOSFET (Metal Oxide) | 28V | 11A (Ta) | 4.5V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | ±12V | - | 2.5W (Ta) | 10 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 55V TO220AB
|
封裝: TO-220-3 |
庫存3,088 |
|
MOSFET (Metal Oxide) | 55V | 45A (Tc) | 10V | 4V @ 1mA | - | 1500pF @ 25V | ±16V | - | 103W (Tc) | 24 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 40V 38A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存922,764 |
|
MOSFET (Metal Oxide) | 40V | 7.6A (Ta), 38A (Tc) | 5V, 10V | 3.5V @ 250µA | 20nC @ 10V | 1000pF @ 32V | ±20V | - | 2.9W (Ta), 75W (Tc) | 26 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 6.1A MICROFET8
|
封裝: 8-PowerWDFN |
庫存7,936 |
|
MOSFET (Metal Oxide) | 20V | 6.1A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 59nC @ 10V | 2085pF @ 10V | ±8V | - | 1.9W (Ta) | 35 mOhm @ 6.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP, MicroFET (3x1.9) | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 11.4A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存2,816 |
|
MOSFET (Metal Oxide) | 400V | 11.4A (Tc) | 10V | 5V @ 250µA | 35nC @ 10V | 1400pF @ 25V | ±30V | - | 3.13W (Ta), 147W (Tc) | 480 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 30A TO-220AB
|
封裝: TO-220-3 |
庫存110,508 |
|
MOSFET (Metal Oxide) | 60V | 30A (Ta) | 5V | 2V @ 250µA | 62nC @ 10V | 1350pF @ 25V | +10V, -8V | - | 96W (Tc) | 47 mOhm @ 30A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 8A TO220FP
|
封裝: TO-220-3 Full Pack, Isolated Tab |
庫存6,560 |
|
MOSFET (Metal Oxide) | 60V | 8A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 27W (Tc) | 200 mOhm @ 4.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
MOSFET N-CH 55V 3.1A SOT-224
|
封裝: TO-261-4, TO-261AA |
庫存2,784 |
|
MOSFET (Metal Oxide) | 55V | 3.1A (Ta) | 4V, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | ±16V | - | 1W (Ta) | 65 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
IXYS |
MOSFET N-CH 200V 86A TO-220
|
封裝: TO-220-3 |
庫存6,992 |
|
MOSFET (Metal Oxide) | 200V | 86A (Tc) | 10V | 5V @ 1mA | 90nC @ 10V | 4500pF @ 25V | ±30V | - | 480W (Tc) | 29 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 30A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存109,332 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 125nC @ 10V | 5370pF @ 15V | ±20V | - | 3W (Ta), 6W (Tc) | 3.3 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 24A TO220FP
|
封裝: TO-220-3 Full Pack |
庫存59,040 |
|
MOSFET (Metal Oxide) | 100V | 24A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 1900pF @ 25V | ±20V | - | 56W (Tc) | 36 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 9.5A TO-220
|
封裝: TO-220-3 |
庫存6,592 |
|
MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 510pF @ 25V | ±30V | - | 72W (Tc) | 360 mOhm @ 4.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 18A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存27,324 |
|
MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 485pF @ 25V | ±16V | - | 49W (Tc) | 63 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 120A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存68,340 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5V @ 250µA | 210nC @ 10V | 15265pF @ 25V | ±20V | - | 375W (Tc) | 4.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 200V 18A TO-220FP
|
封裝: TO-220-3 Full Pack |
庫存520,392 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 940pF @ 25V | ±20V | - | 30W (Tc) | 125 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 75V 80A TO-220
|
封裝: TO-220-3 |
庫存834,156 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 3700pF @ 25V | ±20V | - | 300W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
MOSLEADER |
P -20V 4.4A SOT-23
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
MOSFET N-CH 600V 11A TO220
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 5V @ 250µA | 19 nC @ 10 V | 730 pF @ 100 V | ±25V | - | 110W (Tc) | 365mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Rohm Semiconductor |
750V, 45M, 4-PIN THD, TRENCH-STR
|
封裝: - |
庫存14,583 |
|
SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | 1460 pF @ 500 V | +21V, -4V | - | 115W | 59mOhm @ 17A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Vishay Siliconix |
MOSFET N-CH 100V 10.3A 8SOIC
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 10.3A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 18 nC @ 10 V | 690 pF @ 50 V | ±20V | - | 5.6W (Tc) | 26mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
EPC Space, LLC |
GAN FET HEMT200V18A COTS 4FSMD-B
|
封裝: - |
庫存315 |
|
MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 5V | 2.5V @ 3mA | 5.4 nC @ 5 V | 525 pF @ 100 V | +6V, -4V | - | - | 28mOhm @ 18A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD | 4-SMD, No Lead |
||
onsemi |
MOSFET N-CH 150V 6A DPAK
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 6A (Tc) | - | 4.5V @ 1mA | 30 nC @ 10 V | 1200 pF @ 25 V | - | - | - | 300mOhm @ 3A, 10V | - | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
DISCRETE MOSFET 130A 650V X3 TO2
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Central Semiconductor Corp |
MOSFET N-CH 20V 650MA SOT523
|
封裝: - |
庫存561,030 |
|
MOSFET (Metal Oxide) | 20 V | 650mA (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | 1.58 nC @ 4.5 V | 100 pF @ 16 V | 8V | - | 300mW (Ta) | 230mOhm @ 600mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V U-DFN2020
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 5A (Ta) | 4.5V, 10V | 3V @ 250µA | 5.4 nC @ 10 V | 258 pF @ 50 V | ±20V | - | 800mW (Ta) | 52mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
onsemi |
NCH+SBD 4V DRIVE SERIES
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 31.2A TO220
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | 3240 pF @ 100 V | ±20V | - | 34.7W (Tc) | 110mOhm @ 12.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |