圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Global Power Technologies Group |
MOSFET N-CH 600V 2A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存5,904 |
|
MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 5V @ 250µA | 9nC @ 10V | 360pF @ 25V | ±30V | - | 52.1W (Tc) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 25V 15.2A SO-8FL
|
封裝: 8-PowerTDFN |
庫存7,440 |
|
MOSFET (Metal Oxide) | 25V | 15.2A (Ta), 149A (Tc) | 3.2V, 10V | 2.5V @ 250µA | 85nC @ 11.5V | 4830pF @ 12V | ±16V | - | 900mW (Ta), 86.2W (Tc) | 2.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SO-8FL | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 21A TO-220
|
封裝: TO-220-3 |
庫存5,632 |
|
MOSFET (Metal Oxide) | 200V | 21A (Tc) | 5V, 10V | 2V @ 250µA | 35nC @ 5V | 2200pF @ 25V | ±20V | - | 140W (Tc) | 140 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 50V 0.2A SOT323
|
封裝: SC-70, SOT-323 |
庫存396,000 |
|
MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 10V | 1.5V @ 250µA | - | 50pF @ 10V | ±20V | - | 200mW (Ta) | 3.5 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Vishay Siliconix |
MOSFET N-CH 900V 4.7A TO-247AC
|
封裝: TO-247-3 |
庫存9,360 |
|
MOSFET (Metal Oxide) | 900V | 4.7A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | ±20V | - | 150W (Tc) | 2.5 Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB
|
封裝: TO-220-3 |
庫存6,624 |
|
MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1030pF @ 25V | ±30V | - | 125W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 55V 74A TO-262
|
封裝: TO-262 |
庫存15,264 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | ±20V | - | 200W (Tc) | 20 mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262 |
||
IXYS |
MOSFET N-CH 100V 165A ISOPLUS247
|
封裝: ISOPLUS247? |
庫存5,792 |
|
MOSFET (Metal Oxide) | 100V | 165A (Tc) | 10V | 4V @ 8mA | 400nC @ 10V | 9400pF @ 25V | ±20V | - | 400W (Tc) | 8 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
IXYS |
MOSFET N-CH 600V 50A TO247
|
封裝: TO-247-3 |
庫存3,328 |
|
MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 4.5V @ 4mA | 116nC @ 10V | 4660pF @ 25V | ±30V | - | 660W (Tc) | 73 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Torex Semiconductor Ltd |
MOSFET N-CH 30V 1A SOT23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存763,200 |
|
MOSFET (Metal Oxide) | 30V | 1A (Ta) | 4.5V, 10V | - | - | 150pF @ 10V | ±20V | - | 500mW (Ta) | 120 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 13A TO247
|
封裝: TO-247-3 |
庫存5,392 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 4V @ 250µA | 21.7nC @ 10V | 787pF @ 100V | ±25V | - | 110W (Tc) | 278 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存4,736 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 696pF @ 25V | ±30V | - | 94W (Tc) | 4.2 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
EPC |
TRANS GAN 40V 33A BUMPED DIE
|
封裝: Die |
庫存224,706 |
|
GaNFET (Gallium Nitride) | 40V | 53A (Ta) | 5V | 2.5V @ 9mA | 8.7nC @ 5V | 980pF @ 20V | +6V, -4V | - | - | 4 mOhm @ 33A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Vishay Siliconix |
MOSFET N-CH 60V 5.6A 1212-8
|
封裝: PowerPAK? 1212-8 |
庫存614,472 |
|
MOSFET (Metal Oxide) | 60V | 5.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | - | ±20V | - | 1.5W (Ta) | 25 mOhm @ 8.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Vishay Siliconix |
MOSFET N-CH 200V 2.6A PPAK SO-8
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 2.6A (Ta) | - | 4V @ 250µA | 30 nC @ 10 V | - | - | - | - | 130mOhm @ 4.1A, 10V | - | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 6.5A (Tc) | 10V | 3.5V @ 250µA | 165 nC @ 10 V | 3500 pF @ 25 V | ±30V | - | 100W (Tc) | 950mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
onsemi |
NCH+SBD 2.5V DRIVE SERIES
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Goford Semiconductor |
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
|
封裝: - |
庫存369 |
|
MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 3.5V @ 250µA | 75 nC @ 10 V | 5814 pF @ 25 V | ±20V | - | 130W (Tc) | 18mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Wolfspeed, Inc. |
SICFET N-CH 1200V 30A TO247-3
|
封裝: - |
庫存3,012 |
|
SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 4V @ 5mA | 54 nC @ 15 V | 1350 pF @ 1000 V | +19V, -8V | - | 113.6W (Tc) | 90mOhm @ 20A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 9A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 600 pF @ 25 V | ±20V | - | 75W (Tc) | 400mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
||
onsemi |
PTNG 150V IN CEBU DFNW 8X8 DUAL
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 23A (Ta), 165A (Tc) | 10V | 4.5V @ 521µA | 79 nC @ 10 V | 6514 pF @ 75 V | ±20V | - | 5W (Ta), 292W (Tc) | 4.45mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-TDFNW (8.3x8.4) | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 1
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 10.2 nC @ 4.5 V | 808 pF @ 15 V | ±12V | - | 900mW | 60mOhm @ 4.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
650 V, 190 MOHM GALLIUM NITRIDE
|
封裝: - |
庫存6,876 |
|
GaNFET (Gallium Nitride) | 650 V | 11.5A (Ta) | 6V | 2.5V @ 12.2mA | 2.8 nC @ 6 V | 96 pF @ 400 V | +7V, -1.4V | - | 125W (Ta) | 190mOhm @ 3.9A, 6V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | DFN8080-8 | 8-VDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET P-CH 20V TSOT26
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5.5A (Ta), 13A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 8.6 nC @ 4.5 V | 834 pF @ 10 V | ±12V | - | 1.2W (Ta) | 38mOhm @ 8.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
Infineon Technologies |
MOSFET N-CH 100V 12A/59A TDSON-8
|
封裝: - |
庫存12,831 |
|
MOSFET (Metal Oxide) | 100 V | 12A (Ta), 59A (Tc) | 4.5V, 10V | 2.3V @ 28µA | 24 nC @ 10 V | 1600 pF @ 50 V | ±20V | - | 2.5W (Ta), 60W (Tc) | 10.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 6.4A (Ta) | 2.5V, 10V | 1.3V @ 250µA | 6 nC @ 10 V | 490 pF @ 15 V | ±12V | - | 2W (Ta) | 37mOhm @ 6.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Vishay Siliconix |
N-CHANNEL 30-V (D-S) MOSFET POWE
|
封裝: - |
庫存28,056 |
|
MOSFET (Metal Oxide) | 30 V | 26A (Ta), 104A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 36.2 nC @ 10 V | 1710 pF @ 15 V | +20V, -16V | - | 3.8W (Ta), 63W (Tc) | 3.6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
||
Vishay Siliconix |
MOSFET N-CH 60V 9.8A/16A PPAK
|
封裝: - |
庫存14,670 |
|
MOSFET (Metal Oxide) | 60 V | 9.8A (Ta), 16A (Tc) | 7.5V, 10V | 4V @ 250µA | 13.5 nC @ 10 V | 540 pF @ 30 V | ±20V | - | 3.2W (Ta), 24W (Tc) | 18.5mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |