圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 25V 81A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存6,272 |
|
MOSFET (Metal Oxide) | 25V | 81A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | ±20V | - | 63W (Tc) | 5.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 28V 11.4A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存220,608 |
|
MOSFET (Metal Oxide) | 28V | 11A (Ta) | 4.5V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | ±12V | - | 2.5W (Ta) | 10 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Global Power Technologies Group |
MOSFET N-CH 500V 11A TO220F
|
封裝: TO-220-3 Full Pack |
庫存7,328 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4V @ 250µA | 28nC @ 10V | 1423pF @ 25V | ±30V | - | 51.4W (Tc) | 670 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 25V 46A 2WDSON
|
封裝: 3-WDSON |
庫存2,064 |
|
MOSFET (Metal Oxide) | 25V | 46A (Ta), 180A (Tc) | 4.5V, 10V | 2V @ 250µA | 343nC @ 10V | 16000pF @ 12V | ±20V | - | 2.8W (Ta), 89W (Tc) | 0.8 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Infineon Technologies |
MOSFET N-CH 8TSON
|
封裝: 8-PowerVDFN |
庫存4,672 |
|
MOSFET (Metal Oxide) | 650V | 6.7A (Tc) | 10V | 3.5V @ 210µA | 21nC @ 10V | 440pF @ 100V | ±20V | - | 56.8W (Tc) | 650 mOhm @ 2.1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerVDFN |
||
IXYS |
MOSFET N-CH 1000V 12A TO-247AD
|
封裝: TO-247-3 |
庫存4,304 |
|
MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | ±20V | - | 300W (Tc) | 1.05 Ohm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 100V 16A TO-268
|
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
庫存3,648 |
|
MOSFET (Metal Oxide) | 100V | 16A (Tc) | 0V | - | 225nC @ 5V | 5700pF @ 25V | ±20V | Depletion Mode | 830W (Tc) | 64 mOhm @ 8A, 0V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 75A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存2,100 |
|
MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 1mA | 165nC @ 10V | 8250pF @ 25V | ±20V | - | 230W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3
|
封裝: TO-226-3, TO-92-3 (TO-226AA) |
庫存3,216 |
|
MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 2V @ 500µA | - | 60pF @ 25V | ±20V | - | 1W (Tc) | 3 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Diodes Incorporated |
MOSFET N-CH 30V 6.6A TSOT26
|
封裝: SOT-23-6 Thin, TSOT-23-6 |
庫存2,496 |
|
MOSFET (Metal Oxide) | 30V | 6.6A (Ta) | 4.5V, 10V | 2V @ 250µA | 12.5nC @ 10V | 643pF @ 15V | ±20V | - | 1.2W (Ta) | 23 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存2,624 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 24nC @ 4.5V | 2200pF @ 25V | ±20V | - | 7W (Tc) | 4.2 mOhm @ 12A, 10V | 175°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -20V,
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存6,432 |
|
MOSFET (Metal Oxide) | 20V | 2.8A (Tc) | 2.5V, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | 447pF @ 6V | ±8V | - | 900mW (Ta) | 130 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 35A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存219,480 |
|
MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 52nC @ 10V | 2610pF @ 13V | ±20V | - | 88W (Tc) | 5.7 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存180,000 |
|
MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 800 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 60V 0.37A SB69
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存29,292 |
|
MOSFET (Metal Oxide) | 60V | 370mA (Ta) | 4V, 10V | - | 0.84nC @ 10V | 24.1pF @ 20V | ±20V | - | - | 4.2 Ohm @ 190mA, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 45A
|
封裝: - |
庫存7,776 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | - | - | 3091pF @ 800V | - | - | 282W (Tc) | 60 mOhm @ 20A | 175°C (TJ) | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 20V 12A 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存144,060 |
|
MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 88nC @ 4.5V | 9600pF @ 15V | ±12V | - | 1.6W (Ta) | 8 mOhm @ 14.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
|
封裝: SOT-1023, 4-LFPAK |
庫存169,638 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 100nC @ 10V | 6227pF @ 12V | ±20V | - | 121W (Tc) | 1.3 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
||
Diodes Incorporated |
MOSFET P-CH 100V 3A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存230,388 |
|
MOSFET (Metal Oxide) | 100V | 3A (Ta) | 6V, 10V | 4V @ 250µA | 16.5nC @ 10V | 717pF @ 50V | ±20V | - | 2.15W (Ta) | 235 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET P-CH 100V 1.3A SOT23-6
|
封裝: SOT-23-6 |
庫存803,256 |
|
MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 6V, 10V | 4V @ 250µA | 6.1nC @ 5V | 424pF @ 50V | ±20V | - | 1.1W (Ta) | 350 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
||
Diodes Incorporated |
MOSFET N-CH 60V 150MA SOT23-3
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存1,795,188 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 330mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
MOSFET N-CH 500V 1.8A TO220-3
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 1.8A (Tc) | 10V | 4V @ 250µA | 13 nC @ 10 V | 365 pF @ 25 V | ±30V | - | 62W (Tc) | 2.5Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
onsemi |
MOSFET N-CH 60V 30A 8PQFN
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 881 pF @ 30 V | ±20V | - | 50W (Tj) | 15mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
onsemi |
MOSFET P-CH 20V 40A 8MLP
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 40A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 74 nC @ 10 V | 7995 pF @ 10 V | ±12V | - | 26W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | - |
||
Micro Commercial Co |
MOSFET
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 45A | 4.5V, 10V | 2.5V @ 250µA | 71 nC @ 10 V | 3574 pF @ 15 V | ±20V | - | 78W (Tj) | 7mOhm @ 15A, 10V | -55°C ~ 150°C | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 40V 8A SOT23-3
|
封裝: - |
庫存30 |
|
MOSFET (Metal Oxide) | 40 V | 8A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.4 nC @ 10 V | 500 pF @ 25 V | ±20V | - | 3W (Tc) | 26.3mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
SIC_DISCRETE
|
封裝: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 69A (Tc) | 18V, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | 1738 pF @ 800 V | +23V, -5V | - | 326W (Tc) | 38mOhm @ 27A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-14 | TO-247-4 |
||
Diodes Incorporated |
MOSFET N-CH 240V SOT223 T&R
|
封裝: - |
庫存3,195 |
|
MOSFET (Metal Oxide) | 240 V | 500mA (Ta) | 2.5V, 10V | 1.8V @ 1mA | - | 200 pF @ 25 V | ±40V | - | 2.5W (Ta) | 5.5Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |