圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 105A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存3,744 |
|
MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 35nC @ 4.5V | 2840pF @ 15V | ±20V | - | 110W (Tc) | 6 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 0.4A SOT-223
|
封裝: TO-261-4, TO-261AA |
庫存36,000 |
|
MOSFET (Metal Oxide) | 600V | 400mA (Ta) | 10V | 5.5V @ 80µA | 7.4nC @ 10V | 250pF @ 25V | ±20V | - | 1.8W (Ta) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET P-CH 60V 9.7A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存696,804 |
|
MOSFET (Metal Oxide) | 60V | 9.7A (Tc) | 4.5V, 10V | 2V @ 250µA | 21nC @ 10V | 450pF @ 25V | ±20V | - | 42W (Tc) | 250 mOhm @ 6.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 40V 75A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存3,584 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V, 10V | 2.1V @ 1mA | 20.9nC @ 5V | 2600pF @ 25V | ±10V | - | 96W (Tc) | 6.4 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 11A TO-220
|
封裝: TO-220-3 |
庫存6,720 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4V @ 250µA | 55nC @ 10V | 2055pF @ 25V | ±30V | - | 195W (Tc) | 550 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
封裝: 8-PowerTDFN |
庫存3,904 |
|
MOSFET (Metal Oxide) | 40V | - | 10V | 4V @ 250µA | 32nC @ 10V | 2100pF @ 25V | ±20V | - | 3.7W (Ta), 83W (Tc) | 2.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 1000V 1.6A IPAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存5,408 |
|
MOSFET (Metal Oxide) | 1000V | 1.6A (Tc) | 10V | 5V @ 250µA | 15.5nC @ 10V | 520pF @ 25V | ±30V | - | 2.5W (Ta), 50W (Tc) | 9 Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Central Semiconductor Corp |
MOSFET P-CH 30V 0.45A SOT883
|
封裝: SC-101, SOT-883 |
庫存6,608 |
|
MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 0.88nC @ 4.5V | 55pF @ 25V | 8V | - | 100mW (Ta) | 1.1 Ohm @ 430mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
||
STMicroelectronics |
MOSFET N-CH 200V 15A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存6,000 |
|
MOSFET (Metal Oxide) | 200V | 15A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 800pF @ 25V | ±20V | - | 90W (Tc) | 160 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 100V 9.7A TO220FP
|
封裝: TO-220-3 Full Pack, Isolated Tab |
庫存10,800 |
|
MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 4V, 5V | 2V @ 250µA | 28nC @ 5V | 930pF @ 25V | ±10V | - | 42W (Tc) | 160 mOhm @ 5.8A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Rohm Semiconductor |
MOSFET P-CH 12V 6A TSMT8
|
封裝: 8-SMD, Flat Lead |
庫存106,536 |
|
MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 34nC @ 4.5V | 2800pF @ 6V | ±10V | - | 700mW (Ta) | 23 mOhm @ 6A, 4.5V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
||
Panasonic Electronic Components |
MOSFET N-CH 60V 300MA SOT23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存3,824,988 |
|
MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 3V @ 250µA | 0.8nC @ 4.5V | 40pF @ 10V | ±20V | - | 350mW (Ta) | 3 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET NCH 60V 50A TO252
|
封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
庫存20,616 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | - | 3V @ 250µA | 20.1nC @ 10V | 1143pF @ 25V | - | - | 2.1W (Ta) | 23 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
||
ON Semiconductor |
MOSFET P-CH 30V 4.5A MCPH6
|
封裝: 6-SMD, Flat Leads |
庫存42,462 |
|
MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 8.6nC @ 4.5V | 650pF @ 10V | ±10V | - | 1.5W (Ta) | 73 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
||
STMicroelectronics |
MOSFET N-CH 500V 21A TO-247
|
封裝: TO-247-3 |
庫存390,000 |
|
MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 4V @ 250µA | 50nC @ 10V | 1735pF @ 25V | ±25V | - | 150W (Tc) | 158 mOhm @ 10.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存65,652 |
|
MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 2.5V @ 100µA | 56nC @ 4.5V | 3810pF @ 25V | ±16V | - | 140W (Tc) | 4.9 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 3.16A SOT23-3
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存764,736 |
|
MOSFET (Metal Oxide) | 30V | 3.16A (Ta) | 4.5V, 10V | 3V @ 250µA | 4.5nC @ 5V | 305pF @ 15V | ±20V | - | 750mW (Ta) | 47 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Texas Instruments |
MOSFET P-CH 12V 1.8A PICOSTAR
|
封裝: 3-XFDFN |
庫存53,250 |
|
MOSFET (Metal Oxide) | 12V | 1.8A (Ta) | 1.5V, 4.5V | 0.95V @ 250µA | 1.23nC @ 4.5V | 234pF @ 6V | -6V | - | 500mW (Ta) | 116 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
Panjit International Inc. |
60V P-CHANNEL ENHANCEMENT MODE M
|
封裝: - |
庫存77,172 |
|
MOSFET (Metal Oxide) | 60 V | 5A (Ta), 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22 nC @ 10 V | 1256 pF @ 30 V | ±20V | - | 2W (Ta), 25W (Tc) | 48mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 520 V | 1.5A (Tc) | 10V | 4V @ 250µA | 11 nC @ 10 V | 340 pF @ 25 V | ±30V | - | 36W (Tc) | 5.3Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
onsemi |
MOSFET N-CH 80V 30A/224A 5DFN
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 30A (Ta), 224A (Tc) | 4.5V, 10V | 2V @ 330µA | 112 nC @ 10 V | 6900 pF @ 40 V | ±20V | - | 3.9W (Ta), 214W (Tc) | 1.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Transphorm |
GANFET N-CH 650V 29A TO220
|
封裝: - |
庫存3,255 |
|
GaNFET (Gallium Nitride) | 650 V | 29A (Tc) | 10V | 4.7V @ 700µA | 9 nC @ 10 V | 638 pF @ 400 V | ±20V | - | 96W (Tc) | 85mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
MOSFET N-CH 30V 8.5A 8SOIC
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 13 nC @ 10 V | 635 pF @ 15 V | ±20V | - | 2.5W (Ta) | 23mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 60V 40A 5X6 PQFN
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 11A (Ta), 40A (Tc) | - | 4V @ 50µA | 35 nC @ 10 V | 1256 pF @ 25 V | - | - | - | 14.4mOhm @ 24A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
||
Renesas Electronics Corporation |
P-CHANNEL SMALL SIGNAL MOSFET
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
EPC |
GANFET N-CH 100V 48A DIE
|
封裝: - |
庫存45,804 |
|
GaNFET (Gallium Nitride) | 100 V | 48A (Ta) | 5V | 2.5V @ 9mA | 14.8 nC @ 5 V | 1895 pF @ 50 V | +6V, -4V | - | - | 3.8mOhm @ 25A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
onsemi |
MOSFET N-CH 100V 9A/61A TO263AB
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9A (Ta), 61A (Tc) | 6V, 10V | 4V @ 250µA | 53 nC @ 10 V | 2880 pF @ 25 V | ±20V | - | 150W (Tc) | 16mOhm @ 61A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET BVDSS: 101V~250V PowerDI5
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 11A (Ta), 61A (Tc) | 8V, 10V | 4V @ 250µA | 34 nC @ 10 V | 2344 pF @ 75 V | ±20V | - | 1.5W (Ta) | 19mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |