圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存6,544 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 50µA | 40nC @ 10V | 2700pF @ 25V | ±20V | - | 79W (Tc) | 6.5 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 59A TO-220AB
|
封裝: TO-220-3 |
庫存7,840 |
|
MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | - | 57W (Tc) | 9.5 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存4,816 |
|
MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 3V @ 250µA | 9.7nC @ 4.5V | 670pF @ 10V | ±20V | - | 47W (Tc) | 20 mOhm @ 18A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 600V 30A PLUS220
|
封裝: TO-220-3, Short Tab |
庫存6,000 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 5V @ 4mA | 82nC @ 10V | 4000pF @ 25V | ±30V | - | 500W (Tc) | 240 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
NXP |
MOSFET N-CH 55V 66A TO220AB
|
封裝: TO-220-3 |
庫存4,960 |
|
MOSFET (Metal Oxide) | 55V | 66A (Tc) | 5V, 10V | 2V @ 1mA | - | 3085pF @ 25V | ±10V | - | 138W (Tc) | 15 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
NXP |
MOSFET N-CH 55V 47A TO220AB
|
封裝: TO-220-3 |
庫存6,112 |
|
MOSFET (Metal Oxide) | 55V | 47A (Tc) | 10V | 4V @ 1mA | - | 1310pF @ 25V | ±20V | - | 106W (Tc) | 24 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 6A 8-SOP
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存3,808 |
|
MOSFET (Metal Oxide) | 80V | 6A (Ta) | 10V | 4V @ 250µA | 82nC @ 20V | 1210pF @ 25V | ±20V | - | 2.5W (Ta) | 30 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存2,304 |
|
MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | ±20V | - | 3W (Ta), 20W (Tc) | 3 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
HIGH POWER_NEW
|
封裝: - |
庫存5,808 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 100V 170A TO-264AA
|
封裝: TO-264-3, TO-264AA |
庫存7,360 |
|
MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 4V @ 8mA | 515nC @ 10V | 10300pF @ 25V | ±20V | - | 560W (Tc) | 10 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 200V 56A TO-247
|
封裝: TO-247-3 |
庫存25,200 |
|
MOSFET (Metal Oxide) | 200V | 56A (Tc) | 10V | 4V @ 1mA | 195nC @ 10V | 4860pF @ 25V | ±30V | - | 300W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO-3PN
|
封裝: TO-3P-3, SC-65-3 |
庫存2,080 |
|
MOSFET (Metal Oxide) | 800V | 10A (Ta) | 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | ±30V | - | 250W (Tc) | 1 Ohm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 2.4A TO-220
|
封裝: TO-220-3 |
庫存112,308 |
|
MOSFET (Metal Oxide) | 800V | 2.4A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 550pF @ 25V | ±30V | - | 85W (Tc) | 6.3 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET P-CH 20V TO-236AB
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存3,648 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 22.1nC @ 4.5V | 1820pF @ 10V | ±8V | - | 490mW (Ta), 4.15W (Tc) | 32 mOhm @ 4.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 800V 5A IPAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存53,706 |
|
MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 5V @ 100µA | 12nC @ 10V | 270pF @ 100V | ±30V | - | 85W (Tc) | 1.15 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 21A TO220AB
|
封裝: TO-220-3 |
庫存10,848 |
|
MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 4V @ 250µA | 86nC @ 10V | 1920pF @ 100V | ±30V | - | 227W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 44A TO-247
|
封裝: TO-247-3 |
庫存173,604 |
|
MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 4V @ 250µA | 108nC @ 10V | 5335pF @ 25V | ±30V | - | 750W (Tc) | 120 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
LOW POWER_NEW
|
封裝: - |
Request a Quote |
|
- | - | 7A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 30V 8.8A PQFN
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8.8A (Ta), 19A (Tc) | - | 2.35V @ 25µA | 8.7 nC @ 10 V | 600 pF @ 25 V | - | - | - | 16mOhm @ 8.5A, 10V | - | Surface Mount | PG-TSDSON-6 | 6-PowerVDFN |
||
onsemi |
MOSFET N-CH 20V 200MA SC89-3
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.5V, 4.5V | 1.5V @ 250µA | 1.1 nC @ 4.5 V | 60 pF @ 10 V | ±12V | - | 625mW (Ta) | 5Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
||
IXYS |
MOSFET N-CH 1000V 32A TO268HV
|
封裝: - |
庫存132 |
|
MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 6V @ 4mA | 130 nC @ 10 V | 4075 pF @ 25 V | ±30V | - | 890W (Tc) | 220mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV (IXFT) | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
MOSFET N-CH DPAK
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 950V 6A TO220
|
封裝: - |
庫存1,530 |
|
MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 3.5V @ 140µA | 15 nC @ 10 V | 478 pF @ 400 V | ±20V | - | 27W (Tc) | 1.2Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Rohm Semiconductor |
MOSFET N-CH 60V 250MA SST3
|
封裝: - |
庫存109,155 |
|
MOSFET (Metal Oxide) | 60 V | 250mA (Ta) | 2.5V, 10V | 2.3V @ 1mA | - | 15 pF @ 25 V | ±20V | - | 350mW (Ta) | 2.4Ohm @ 250mA, 10V | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
||
MOSLEADER |
N 30V 5.1A SOT23
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 120A 8TDSON-33
|
封裝: - |
庫存29,595 |
|
MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2V @ 90µA | 140 nC @ 10 V | 7910 pF @ 25 V | ±16V | - | 150W (Tc) | 0.8mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 150V 186A TO247-3
|
封裝: - |
庫存1,563 |
|
MOSFET (Metal Oxide) | 150 V | 186A (Tc) | 10V | 4.6V @ 264µA | 100 nC @ 10 V | 6000 pF @ 75 V | ±20V | - | 3.8W (Ta), 341W (Tc) | 4.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Goford Semiconductor |
P-60V,-12A,RD(MAX)<75M@-10V,VTH-
|
封裝: - |
庫存5,187 |
|
MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 3V @ 250µA | 23 nC @ 10 V | 1108 pF @ 30 V | ±20V | - | 27W (Tc) | 75mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |