圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7
|
封裝: TO-263-7, D2Pak (6 Leads + Tab) |
庫存7,136 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 6V, 10V | 3.9V @ 250µA | 315nC @ 10V | 10250pF @ 25V | ±20V | - | 245W (Tc) | 1 mOhm @ 100A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 30V 13.3A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存8,820 |
|
MOSFET (Metal Oxide) | 30V | 13.3A (Ta) | 4.5V | 1V @ 250µA | 62nC @ 5V | 3780pF @ 16V | ±12V | - | 2.5W (Ta) | 9 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 33A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存55,920 |
|
MOSFET (Metal Oxide) | 30V | 33A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | ±20V | - | 57W (Tc) | 31 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET SS
|
封裝: - |
庫存6,880 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET P-CH 100V 1A 4-DIP
|
封裝: 4-DIP (0.300", 7.62mm) |
庫存9,708 |
|
MOSFET (Metal Oxide) | 100V | 1A (Ta) | - | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | - | - | - | 600 mOhm @ 600mA, 10V | - | Through Hole | 4-HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 3.6A I2PAK
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存5,344 |
|
MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 5V @ 250µA | 26nC @ 10V | 910pF @ 25V | ±30V | - | 3.13W (Ta), 130W (Tc) | 4.25 Ohm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 770MA SOT-223
|
封裝: TO-261-4, TO-261AA |
庫存6,312 |
|
MOSFET (Metal Oxide) | 200V | 770mA (Ta) | 5V | 2V @ 250µA | 9nC @ 5V | 240pF @ 25V | ±20V | - | 1.8W (Tc) | 1.5 Ohm @ 390mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET P-CH 60V 6.7A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存6,880 |
|
MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 3.7W (Ta), 43W (Tc) | 500 mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 650V 11.4A TO220
|
封裝: TO-220-3 Full Pack |
庫存5,456 |
|
MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | ±20V | - | 32W (Tc) | 310 mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Microsemi Corporation |
MOSFET N-CH 600V 49A TO-264
|
封裝: TO-264-3, TO-264AA |
庫存4,656 |
|
MOSFET (Metal Oxide) | 600V | 49A (Tc) | 12V | 4V @ 2.5mA | - | 9000pF @ 25V | ±30V | - | 730W (Tc) | 125 mOhm @ 24.5A, 12V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 150V 96A TO-3P
|
封裝: TO-3P-3, SC-65-3 |
庫存499,272 |
|
MOSFET (Metal Oxide) | 150V | 96A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 3500pF @ 25V | ±20V | - | 480W (Tc) | 24 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MV7 80/20V 1000A N-CHANNEL POWER
|
封裝: - |
庫存7,328 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存88,080 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 4V, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | ±10V | - | 3.7W (Ta), 43W (Tc) | 540 mOhm @ 3.4A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 28A 8DFN
|
封裝: 8-SMD, Flat Lead |
庫存5,472 |
|
MOSFET (Metal Oxide) | 30V | 30.5A (Ta), 28A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 40nC @ 10V | 1950pF @ 15V | ±20V | - | 5W (Ta), 28W (Tc) | 3.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (2.9x2.3) | 8-SMD, Flat Lead |
||
Infineon Technologies |
MOSFET N CH 40V 90A I-PAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存5,472 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | ±20V | - | 140W (Tc) | 2.4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 800V 17A TO220
|
封裝: TO-220-3 |
庫存9,732 |
|
MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 3.5V @ 360µA | 36nC @ 10V | 1200pF @ 500V | ±20V | Super Junction | 101W (Tc) | 280 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 18A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存633,696 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 3V @ 1mA | 41nC @ 10V | 2670pF @ 15V | ±20V | - | 2.5W (Ta) | 4.8 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 50A SOP-8 ADV
|
封裝: 8-PowerVDFN |
庫存68,754 |
|
MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 88nC @ 10V | 7800pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 2.8 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A POWER33
|
封裝: 8-PowerTDFN |
庫存6,012 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 20A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 27.2nC @ 4.5V | 3365pF @ 15V | ±12V | - | 2.3W (Ta), 41W (Tc) | 6.1 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 0.17A SOT-23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存129,738 |
|
MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 2V @ 1mA | 2.5nC @ 10V | 21.5pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
MOSFET N-CH 300V 130A SOT227
|
封裝: SOT-227-4, miniBLOC |
庫存7,200 |
|
MOSFET (Metal Oxide) | 300V | 130A | 10V | 5V @ 8mA | 335nC @ 10V | 28000pF @ 25V | ±20V | - | 900W (Tc) | 19 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Wolfspeed, Inc. |
SIC, MOSFET, 160M, 1200V, TO-247
|
封裝: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 17.9A (Tc) | 15V | 3.6V @ 2.33mA | 33 nC @ 15 V | 730 pF @ 1000 V | -8V, +19V | - | 103W (Tc) | 208mOhm @ 8.5A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 300A 8HSOF
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 269 nC @ 4.5 V | 16000 pF @ 20 V | ±20V | - | 500W (Tc) | 0.72mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Vishay Siliconix |
MOSFET N-CH 600V 18A TO220AB
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 4V @ 250µA | 92 nC @ 10 V | 1640 pF @ 100 V | ±30V | - | 179W (Tc) | 202mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
SICFET N-CH 900V 9.8A/112A D2PAK
|
封裝: - |
庫存3,864 |
|
SiCFET (Silicon Carbide) | 900 V | 9.8A (Ta), 112A (Tc) | 15V | 4.3V @ 20mA | 200 nC @ 15 V | 4415 pF @ 450 V | +19V, -10V | - | 3.7W (Ta), 477W (Tc) | 28mOhm @ 60A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Micro Commercial Co |
P-CHANNEL MOSFET,DFN1006-3
|
封裝: - |
庫存37,212 |
|
MOSFET (Metal Oxide) | 20 V | 650mA | 1.8V, 4.5V | 1.2V @ 250µA | 0.86 nC @ 4.5 V | 40 pF @ 16 V | ±12V | - | 900mW | 850mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
||
Panjit International Inc. |
SOT-523, MOSFET
|
封裝: - |
庫存148,116 |
|
MOSFET (Metal Oxide) | 20 V | 600mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 2.2 nC @ 4.5 V | 151 pF @ 10 V | ±8V | - | 300mW (Ta) | 340mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 Flat Leads | SC-89, SOT-490 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
封裝: - |
庫存42 |
|
MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 3.5V @ 900µA | 45 nC @ 10 V | 1800 pF @ 300 V | ±30V | - | 156W (Tc) | 210mOhm @ 8.7A, 10V | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |