頁 1215 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  1,215/1,502
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPD25CN10NGBUMA1
Infineon Technologies

MOSFET N-CH 100V 35A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 39µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,128
MOSFET (Metal Oxide)
100V
35A (Tc)
10V
4V @ 39µA
31nC @ 10V
2070pF @ 50V
±20V
-
71W (Tc)
25 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFZ44VZS
Infineon Technologies

MOSFET N-CH 60V 57A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,168
MOSFET (Metal Oxide)
60V
57A (Tc)
10V
4V @ 250µA
65nC @ 10V
1690pF @ 25V
±20V
-
92W (Tc)
12 mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP60N03KUG-E1-AY
Renesas Electronics America

MOSFET N-CH 30V 60A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,576
MOSFET (Metal Oxide)
30V
60A (Tc)
10V
4V @ 250µA
93nC @ 10V
5300pF @ 25V
±20V
-
1.8W (Ta), 88W (Tc)
4.8 mOhm @ 30A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTC72N30T
IXYS

MOSFET N-CH 300V 72A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
封裝: ISOPLUS220?
庫存4,544
MOSFET (Metal Oxide)
300V
72A (Tc)
-
-
-
-
-
-
-
-
-
Through Hole
ISOPLUS220?
ISOPLUS220?
NTD4806N-35G
ON Semiconductor

MOSFET N-CH 30V 11A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
封裝: TO-251-3 Stub Leads, IPak
庫存6,016
MOSFET (Metal Oxide)
30V
11.3A (Ta), 79A (Tc)
4.5V, 11.5V
2.5V @ 250µA
23nC @ 4.5V
2142pF @ 12V
±20V
-
1.4W (Ta), 68W (Tc)
6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
FQB15P12TM
Fairchild/ON Semiconductor

MOSFET P-CH 120V 15A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,624
MOSFET (Metal Oxide)
120V
15A (Tc)
10V
4V @ 250µA
38nC @ 10V
1100pF @ 25V
±30V
-
3.75W (Ta), 100W (Tc)
200 mOhm @ 7.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB20N06TM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,168
MOSFET (Metal Oxide)
60V
20A (Tc)
10V
4V @ 250µA
15nC @ 10V
590pF @ 25V
±25V
-
3.75W (Ta), 53W (Tc)
60 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFI9520G
Vishay Siliconix

MOSFET P-CH 100V 5.2A TO220FP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封裝: TO-220-3 Full Pack, Isolated Tab
庫存4,192
MOSFET (Metal Oxide)
100V
5.2A (Tc)
10V
4V @ 250µA
18nC @ 10V
390pF @ 25V
±20V
-
37W (Tc)
600 mOhm @ 3.1A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
NVTFS5811NLWFTWG
ON Semiconductor

MOSFET N-CH 40V 40A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存5,504
MOSFET (Metal Oxide)
40V
16A (Ta)
4.5V, 10V
2.2V @ 250µA
30nC @ 10V
1570pF @ 25V
±20V
-
3.2W (Ta), 21W (Tc)
6.7 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
IXFK64N60Q3
IXYS

MOSFET N-CH 600V 64A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
封裝: TO-264-3, TO-264AA
庫存3,184
MOSFET (Metal Oxide)
600V
64A (Tc)
10V
6.5V @ 4mA
190nC @ 10V
9930pF @ 25V
±30V
-
1250W (Tc)
95 mOhm @ 32A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
STD3PK50Z
STMicroelectronics

MOSFET P-CH 500V 2.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,664
MOSFET (Metal Oxide)
500V
2.8A (Tc)
10V
4.5V @ 100µA
20nC @ 10V
620pF @ 25V
±30V
-
70W (Tc)
4 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STF4N62K3
STMicroelectronics

MOSFET N-CH 620V 3.8A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存81,432
MOSFET (Metal Oxide)
620V
3.8A (Tc)
10V
4.5V @ 50µA
22nC @ 10V
550pF @ 50V
±30V
-
25W (Tc)
2 Ohm @ 1.9A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot IPP50R380CE
Infineon Technologies

MOSFET N CH 500V 9.9A PGTO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存450,156
MOSFET (Metal Oxide)
500V
9.9A (Tc)
13V
3.5V @ 260µA
24.8nC @ 10V
584pF @ 100V
±20V
Super Junction
73W (Tc)
380 mOhm @ 3.2A, 13V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IXFH76N07-12
IXYS

MOSFET N-CH 70V 76A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 70V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存3,840
MOSFET (Metal Oxide)
70V
76A (Tc)
10V
3.4V @ 4mA
240nC @ 10V
4400pF @ 25V
±20V
-
360W (Tc)
12 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
STP18N65M2
STMicroelectronics

MOSFET N-CH 650V 12A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存6,696
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
4V @ 250µA
20nC @ 10V
770pF @ 100V
±25V
-
110W (Tc)
330 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
SIHH26N60E-T1-GE3
Vishay Siliconix

MOSFET N-CH 600V 25A POWERPAK8X8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2815pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 202W (Tc)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 8 x 8
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存6,672
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
4V @ 250µA
116nC @ 10V
2815pF @ 100V
±30V
-
202W (Tc)
135 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 8 x 8
8-PowerTDFN
hot AUIRFR5410
Infineon Technologies

MOSFET P-CH 100V 13A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存140,976
MOSFET (Metal Oxide)
100V
13A (Tc)
10V
4V @ 250µA
58nC @ 10V
760pF @ 25V
±20V
-
66W (Tc)
205 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SIA413DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 12A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
封裝: PowerPAK? SC-70-6
庫存270,324
MOSFET (Metal Oxide)
12V
12A (Tc)
1.5V, 4.5V
1V @ 250µA
57nC @ 8V
1800pF @ 10V
±8V
-
3.5W (Ta), 19W (Tc)
29 mOhm @ 6.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
hot SI1403CDL-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 2.1A SC-70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta), 900mW (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存434,412
MOSFET (Metal Oxide)
20V
2.1A (Tc)
2.5V, 4.5V
1.5V @ 250µA
8nC @ 4.5V
281pF @ 10V
±12V
-
600mW (Ta), 900mW (Tc)
140 mOhm @ 1.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
hot STF10N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存12,708
MOSFET (Metal Oxide)
600V
7.5A (Tc)
10V
4V @ 250µA
13.5nC @ 10V
400pF @ 100V
±25V
-
25W (Tc)
600 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
RW4E045ATTCL1
Rohm Semiconductor

PCH -30V -4.5A POWER MOSFET. RW4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-7T
  • Package / Case: 6-PowerUFDFN
封裝: -
庫存8,820
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4.5V, 10V
2.5V @ 1mA
11 nC @ 10 V
485 pF @ 15 V
±20V
-
1.5W (Ta)
48mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
DFN1616-7T
6-PowerUFDFN
CES2305-ML
MOSLEADER

Single P -30V -4A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMFS5A160PLZT1G
onsemi

MOSFET P-CH 60V 15A/100A 5DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
15A (Ta), 100A (Tc)
4.5V, 10V
2.6V @ 1mA
160 nC @ 10 V
7700 pF @ 20 V
±20V
-
3.8W (Ta), 200W (Tc)
7.7mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
MSJU04N80A-TP
Micro Commercial Co

N-CHANNEL MOSFET,DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tj)
  • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存14,805
MOSFET (Metal Oxide)
800 V
4.5A
10V
4.5V @ 250µA
11.5 nC @ 10 V
396 pF @ 100 V
±20V
-
88W (Tj)
1.3Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
NP82N06NLG-S18-AY
NEC Corporation

MOSFET N-CH 60V 82A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
82A (Tc)
-
2.5V @ 250µA
160 nC @ 10 V
8550 pF @ 25 V
-
-
1.8W (Ta), 143W (Tc)
7.4mOhm @ 41A, 10V
175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
SQA470EEJ-T1_GE3
Vishay Siliconix

MOSFET N-CH 30V 2.25A PPAK SC70

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 13.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6
封裝: -
庫存22,521
MOSFET (Metal Oxide)
30 V
2.25A (Tc)
2.5V, 4.5V
1.6V @ 250µA
5.2 nC @ 4.5 V
453 pF @ 20 V
±12V
-
13.6W (Tc)
56mOhm @ 2A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
IPTG210N25NM3FDATMA1
Infineon Technologies

TRENCH >=100V PG-HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 267µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
封裝: -
Request a Quote
MOSFET (Metal Oxide)
250 V
7.7A (Ta), 77A (Tc)
10V
4V @ 267µA
81 nC @ 10 V
7000 pF @ 125 V
±20V
-
3.8W (Ta), 375W (Tc)
21mOhm @ 69A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
IXTQ86N25T
IXYS

MOSFET N-CH 250V 86A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Ta)
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
250 V
86A (Tc)
10V
5V @ 1mA
105 nC @ 10 V
5330 pF @ 25 V
±30V
-
540W (Ta)
37mOhm @ 43A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3