頁 1124 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  1,124/1,502
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF6709S2TR1PBF
Infineon Technologies

MOSFET N-CH 25V 12A DIRECTFET-S1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET S1
  • Package / Case: DirectFET? Isometric S1
封裝: DirectFET? Isometric S1
庫存9,696
MOSFET (Metal Oxide)
25V
12A (Ta), 39A (Tc)
4.5V, 10V
2.35V @ 25µA
12nC @ 4.5V
1010pF @ 13V
±20V
-
1.8W (Ta), 21W (Tc)
7.8 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DIRECTFET S1
DirectFET? Isometric S1
hot SPP80N04S2L-03
Infineon Technologies

MOSFET N-CH 40V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 213nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存16,020
MOSFET (Metal Oxide)
40V
80A (Tc)
4.5V, 10V
2V @ 250µA
213nC @ 10V
7930pF @ 25V
±20V
-
300W (Tc)
3.4 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IRL5602
Infineon Technologies

MOSFET P-CH 20V 24A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存4,272
MOSFET (Metal Oxide)
20V
24A (Tc)
2.5V, 4.5V
1V @ 250µA
44nC @ 4.5V
1460pF @ 15V
±8V
-
-
42 mOhm @ 12A, 4.5V
-
Through Hole
TO-220AB
TO-220-3
SI8416DB-T1-GE3
Vishay Siliconix

MOSFET N-CH 8V 16A MICRO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-microfoot
  • Package / Case: 6-UFBGA
封裝: 6-UFBGA
庫存7,168
MOSFET (Metal Oxide)
8V
16A (Tc)
1.2V, 4.5V
800mV @ 250µA
26nC @ 4.5V
1470pF @ 4V
±5V
-
2.77W (Ta), 13W (Tc)
23 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-microfoot
6-UFBGA
BSP100,135
Nexperia USA Inc.

MOSFET N-CH 30V 3.2A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存4,976
MOSFET (Metal Oxide)
30V
3.2A (Ta)
4.5V, 10V
2.8V @ 1mA
6nC @ 10V
250pF @ 20V
±20V
-
8.3W (Tc)
100 mOhm @ 2.2A, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
TK40P03M1(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A 3DP 2-7K1A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: DP
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,600
MOSFET (Metal Oxide)
30V
40A (Ta)
4.5V, 10V
2.3V @ 100µA
17.5nC @ 10V
1150pF @ 10V
±20V
-
-
10.8 mOhm @ 20A, 10V
-
Surface Mount
DP
TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF46N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 25.6A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 25.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 12.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存6,560
MOSFET (Metal Oxide)
150V
25.6A (Tc)
10V
4V @ 250µA
110nC @ 10V
3250pF @ 25V
±25V
-
66W (Tc)
42 mOhm @ 12.8A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
IRFBC20LPBF
Vishay Siliconix

MOSFET N-CH 600V 2.2A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存2,128
MOSFET (Metal Oxide)
600V
2.2A (Tc)
10V
4V @ 250µA
18nC @ 10V
350pF @ 25V
±20V
-
3.1W (Ta), 50W (Tc)
4.4 Ohm @ 1.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot MMFT5P03HDT1
ON Semiconductor

MOSFET P-CH 30V 3.7A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存24,300
MOSFET (Metal Oxide)
30V
3.7A (Ta)
4.5V, 10V
3V @ 250µA
24nC @ 10V
950pF @ 25V
±20V
-
1.56W (Ta)
100 mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot NTGS3443T1
ON Semiconductor

MOSFET P-CH 20V 2.2A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 5V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
封裝: SOT-23-6
庫存28,404
MOSFET (Metal Oxide)
20V
2.2A (Ta)
2.5V, 4.5V
1.5V @ 250µA
15nC @ 4.5V
565pF @ 5V
±12V
-
500mW (Ta)
65 mOhm @ 4.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
hot STP8N65M5
STMicroelectronics

MOSFET N-CH 650V 7A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存821,088
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
5V @ 250µA
15nC @ 10V
690pF @ 100V
±25V
-
70W (Tc)
600 mOhm @ 3.5A, 10V
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IPP80R900P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存6,752
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
3.5V @ 110µA
15nC @ 10V
350pF @ 500V
±20V
-
45W (Tc)
900 mOhm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TSM2303CX RFG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -30V,

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存5,216
MOSFET (Metal Oxide)
30V
1.3A (Ta)
4.5V, 10V
3V @ 250µA
3.2nC @ 4.5V
565pF @ 10V
±20V
-
700mW (Ta)
180 mOhm @ 1.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot IPB50R140CP
Infineon Technologies

MOSFET N-CH 550V 23A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 930µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存109,692
MOSFET (Metal Oxide)
550V
23A (Tc)
10V
3.5V @ 930µA
64nC @ 10V
2540pF @ 100V
±20V
-
192W (Tc)
140 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SIR846DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封裝: PowerPAK? SO-8
庫存18,324
MOSFET (Metal Oxide)
100V
60A (Tc)
7.5V, 10V
3.5V @ 250µA
72nC @ 10V
2870pF @ 50V
±20V
-
6.25W (Ta), 104W (Tc)
7.8 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot FDMS7660
Fairchild/ON Semiconductor

MOSFET N-CH 30V 25A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5565pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存641,508
MOSFET (Metal Oxide)
30V
25A (Ta), 42A (Tc)
4.5V, 10V
3V @ 250µA
84nC @ 10V
5565pF @ 15V
±20V
-
2.5W (Ta), 78W (Tc)
2.8 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
hot AO7400
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 1.7A SC70-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.82nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
封裝: SC-70, SOT-323
庫存1,290,276
MOSFET (Metal Oxide)
30V
1.7A (Ta)
2.5V, 10V
1.4V @ 250µA
4.82nC @ 4.5V
390pF @ 15V
±12V
-
350mW (Ta)
85 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
2SK4098LS-YOC11
onsemi

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
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IPP65R115CFD7AAKSA1
Infineon Technologies

MOSFET N-CH 650V 21A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 490µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封裝: -
庫存15
MOSFET (Metal Oxide)
650 V
21A (Tc)
10V
4.5V @ 490µA
41 nC @ 10 V
1950 pF @ 400 V
±20V
-
114W (Tc)
115mOhm @ 9.7A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IMZA120R040M1HXKSA1
Infineon Technologies

SIC DISCRETE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-8
  • Package / Case: TO-247-4
封裝: -
庫存63
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
15V, 18V
5.2V @ 8.3mA
39 nC @ 18 V
1620 nF @ 25 V
+20V, -5V
-
227W (Tc)
54.4mOhm @ 19.3A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-8
TO-247-4
DMP1012USS-13
Diodes Incorporated

MOSFET BVDSS: 8V-24V SO-8 T&R 2.

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
MOSFET (Metal Oxide)
12 V
8.5A (Ta)
1.8V, 4.5V
1V @ 250µA
19.5 nC @ 4.5 V
1344 pF @ 10 V
±8V
-
1.3W (Ta)
15mOhm @ 9A, 4.5V
-55°C ~ 150°C (TJ)
-
-
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RX3G07CGNC16
Rohm Semiconductor

MOSFET N-CH 40V 70A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: -
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MOSFET (Metal Oxide)
40 V
70A (Tc)
-
2.5V @ 500µA
32 nC @ 10 V
2410 pF @ 20 V
±20V
-
78W (Tc)
4.7mOhm @ 70A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPQC60T010S7XTMA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
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BUK9Y22-60ELX
Nexperia USA Inc.

SINGLE N-CHANNEL 60 V, 15 MOHM L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Ta)
  • Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封裝: -
庫存9,000
MOSFET (Metal Oxide)
60 V
50A (Ta)
4.5V, 10V
2.1V @ 1mA
48 nC @ 10 V
2592 pF @ 25 V
±10V
-
95W (Ta)
14.8mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
IRF730R4587
Harris Corporation

5.5A 400V 1.000 OHM N-CHANNEL

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
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NVD5490NLT4G
onsemi

MOSFET N-CH 60V 5A/17A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.4W (Ta), 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
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MOSFET (Metal Oxide)
60 V
5A (Ta), 17A (Tc)
4.5V, 10V
2.5V @ 250µA
14 nC @ 10 V
365 pF @ 25 V
±20V
-
3.4W (Ta), 49W (Tc)
64mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
SI3415A-TP
Micro Commercial Co

MOSFET P-CH 20V 4A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存41,295
MOSFET (Metal Oxide)
20 V
4A (Tj)
2.5V, 4.5V
900mV @ 250µA
12 nC @ 4.5 V
950 pF @ 10 V
±10V
-
1.4W
45mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
UPA2715GR-E1-AT
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
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