頁 1110 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 805
Language Translation

* Please refer to the English Version as our Official Version.

電晶體 - FET、MOSFET - 單

記錄 42,029
頁  1,110/1,502
圖片
零件編號
製造商
描述
封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF7353D2PBF
Infineon Technologies

MOSFET N-CH 30V 6.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,032
MOSFET (Metal Oxide)
30V
6.5A (Ta)
4.5V, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
±20V
Schottky Diode (Isolated)
2W (Ta)
29 mOhm @ 5.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IXFD28N50Q-72
IXYS

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存4,416
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CPH6442-TL-E
ON Semiconductor

MOSFET N-CH 60V 6A CPH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存7,280
MOSFET (Metal Oxide)
60V
6A (Ta)
4V, 10V
2.6V @ 1mA
20nC @ 10V
1040pF @ 20V
±20V
-
1.6W (Ta)
43 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
6-CPH
SOT-23-6 Thin, TSOT-23-6
hot SI5486DU-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 12A PPAK CHIPFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PowerPak? ChipFet (3x1.9)
  • Package / Case: 8-PowerVDFN
封裝: 8-PowerVDFN
庫存2,761,800
MOSFET (Metal Oxide)
20V
12A (Tc)
1.8V, 4.5V
1V @ 250µA
54nC @ 8V
2100pF @ 10V
±8V
-
3.1W (Ta), 31W (Tc)
15 mOhm @ 7.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerPak? ChipFet (3x1.9)
8-PowerVDFN
hot SI5445BDC-T1-E3
Vishay Siliconix

MOSFET P-CH 8V 5.2A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
封裝: 8-SMD, Flat Lead
庫存410,016
MOSFET (Metal Oxide)
8V
5.2A (Ta)
1.8V, 4.5V
1V @ 250µA
21nC @ 4.5V
-
±8V
-
1.3W (Ta)
33 mOhm @ 5.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
NTD14N03RG
ON Semiconductor

MOSFET N-CH 25V 2.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,664
MOSFET (Metal Oxide)
25V
2.5A (Ta)
4.5V, 10V
2V @ 250µA
1.8nC @ 5V
115pF @ 20V
±20V
-
1.04W (Ta), 20.8W (Tc)
95 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRC634PBF
Vishay Siliconix

MOSFET N-CH 250V 8.1A TO-220-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-5
  • Package / Case: TO-220-5
封裝: TO-220-5
庫存9,924
MOSFET (Metal Oxide)
250V
8.1A (Tc)
10V
4V @ 250µA
41nC @ 10V
770pF @ 25V
±20V
Current Sensing
74W (Tc)
450 mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
hot IRLR7807ZPBF
Infineon Technologies

MOSFET N-CH 30V 43A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存970,428
MOSFET (Metal Oxide)
30V
43A (Tc)
4.5V, 10V
2.25V @ 250µA
11nC @ 4.5V
780pF @ 15V
±20V
-
40W (Tc)
13.8 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
RZY200P01TL
Rohm Semiconductor

MOSFET P-CH 12V 20A TCPT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TCPT3
  • Package / Case: 3-SMD, Flat Leads
封裝: 3-SMD, Flat Leads
庫存3,232
MOSFET (Metal Oxide)
12V
20A (Ta)
-
-
-
-
±10V
-
20W (Tc)
-
150°C (TJ)
Surface Mount
TCPT3
3-SMD, Flat Leads
DKI06108
Sanken

MOSFET N-CH 60V 47A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 650µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 23.6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,424
MOSFET (Metal Oxide)
60V
47A (Tc)
4.5V, 10V
2.5V @ 650µA
38.6nC @ 10V
2520pF @ 25V
±20V
-
47W (Tc)
9.1 mOhm @ 23.6A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
IRF6614TRPBF
Infineon Technologies

MOSFET N-CH 40V 12.7A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? ST
  • Package / Case: DirectFET? Isometric ST
封裝: DirectFET? Isometric ST
庫存7,536
MOSFET (Metal Oxide)
40V
12.7A (Ta), 55A (Tc)
4.5V, 10V
2.25V @ 250µA
29nC @ 4.5V
2560pF @ 20V
±20V
-
2.1W (Ta), 42W (Tc)
8.3 mOhm @ 12.7A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? ST
DirectFET? Isometric ST
TK55S10N1,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 55A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 27.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存16,866
MOSFET (Metal Oxide)
100V
55A (Ta)
10V
4V @ 500µA
49nC @ 10V
3280pF @ 10V
±20V
-
157W (Tc)
6.5 mOhm @ 27.5A, 10V
175°C (TJ)
Surface Mount
DPAK+
TO-252-3, DPak (2 Leads + Tab), SC-63
FCH041N65EFL4
Fairchild/ON Semiconductor

MOSFET N-CH 650V 76A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 7.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封裝: TO-247-4
庫存10,668
MOSFET (Metal Oxide)
650V
76A (Tc)
10V
5V @ 7.6mA
298nC @ 10V
12560pF @ 100V
±20V
-
595W (Tc)
41 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
hot FDMS3672
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.4A POWER56-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2680pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存308,688
MOSFET (Metal Oxide)
100V
7.4A (Ta), 22A (Tc)
6V, 10V
4V @ 250µA
44nC @ 10V
2680pF @ 50V
±20V
-
2.5W (Ta), 78W (Tc)
23 mOhm @ 7.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerWDFN
hot AON7280
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 20A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN-EP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存360,000
MOSFET (Metal Oxide)
80V
20A (Ta), 50A (Tc)
6V, 10V
3.4V @ 250µA
38nC @ 10V
1871pF @ 40V
±20V
-
6.3W (Ta), 83W (Tc)
8.5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3.3x3.3)
8-PowerWDFN
hot SI1330EDL-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 240MA SOT323-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 280mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 250mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
封裝: SC-70, SOT-323
庫存772,140
MOSFET (Metal Oxide)
60V
240mA (Ta)
3V, 10V
2.5V @ 250µA
0.6nC @ 4.5V
-
±20V
-
280mW (Ta)
2.5 Ohm @ 250mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
PMV16XN-ML
MOSLEADER

N 20V 8.6A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NP89N03ZUGW-U
Renesas Electronics Corporation

TRANSISTOR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMN31D5L-7
Diodes Incorporated

MOSFET N-CH 30V 500MA SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存12,171
MOSFET (Metal Oxide)
30 V
500mA (Ta)
2.5V, 4V
1.6V @ 250µA
1.2 nC @ 10 V
50 pF @ 15 V
±20V
-
350mW (Ta)
1.5Ohm @ 10mA, 4V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TSM900N06CH
Taiwan Semiconductor Corporation

60V, 11A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251S (IPAK SL)
  • Package / Case: TO-251-3 Stub Leads, IPAK
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
11A (Tc)
4.5V, 10V
2.5V @ 250µA
9.3 nC @ 10 V
500 pF @ 15 V
±20V
-
25W (Tc)
90mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-251S (IPAK SL)
TO-251-3 Stub Leads, IPAK
IPD60R2K0PFD7SAUMA1
Infineon Technologies

MOSFET N-CH 600V 3A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-344
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
MOSFET (Metal Oxide)
600 V
3A (Tc)
10V
4.5V @ 30µA
3.8 nC @ 10 V
134 pF @ 400 V
±20V
-
20W (Tc)
2Ohm @ 500mA, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3-344
TO-252-3, DPAK (2 Leads + Tab), SC-63
G1002L
Goford Semiconductor

N100V,RD(MAX)<250M@10V,VTH1.2V~2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3L
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存8,922
MOSFET (Metal Oxide)
100 V
2A (Tc)
4.5V, 10V
2V @ 250µA
10 nC @ 10 V
413 pF @ 50 V
±20V
-
1.3W (Tc)
250mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3L
TO-236-3, SC-59, SOT-23-3
FDD86381-F085
onsemi

MOSFET N-CH 80V 25A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48.4W (Tj)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存55,101
MOSFET (Metal Oxide)
80 V
25A (Tc)
10V
4V @ 250µA
21 nC @ 10 V
866 pF @ 40 V
±20V
-
48.4W (Tj)
21mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB080N03LGATMA1
Infineon Technologies

MOSFET N-CH 30V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
Request a Quote
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2.2V @ 250µA
18 nC @ 10 V
1900 pF @ 15 V
±20V
-
47W (Tc)
8mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPT014N08NM5ATMA1
Infineon Technologies

MOSFET N-CH 80V 37A/331A HSOF-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
封裝: -
庫存6,627
MOSFET (Metal Oxide)
80 V
37A (Ta), 331A (Tc)
6V, 10V
3.8V @ 280µA
200 nC @ 10 V
14000 pF @ 40 V
±20V
-
300W (Tc)
1.4mOhm @ 150A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IAUZ40N06S5N105ATMA1
Infineon Technologies

MOSFET_)40V 60V) PG-TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-32
  • Package / Case: 8-PowerTDFN
封裝: -
庫存15,000
MOSFET (Metal Oxide)
60 V
40A (Tj)
7V, 10V
3.4V @ 13µA
16.3 nC @ 10 V
1099 pF @ 30 V
±20V
-
42W (Tc)
10.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8-32
8-PowerTDFN
NTHL070N120M3S
onsemi

SIC MOS TO247-3L 70MOHM 1200V M3

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封裝: -
庫存696
SiC (Silicon Carbide Junction Transistor)
1200 V
34A (Tc)
18V
4.4V @ 7mA
57 nC @ 18 V
1230 pF @ 800 V
+22V, -10V
-
160W (Tc)
87mOhm @ 15A, 18V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NTMFSC4D2N10MC
onsemi

MOSFET N-CH 100V 29.6A/116A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 29.6A (Ta), 116A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2856 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.9W (Ta), 122W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6.15)
  • Package / Case: 8-PowerVDFN
封裝: -
庫存7,740
MOSFET (Metal Oxide)
100 V
29.6A (Ta), 116A (Tc)
-
4V @ 250µA
42 nC @ 10 V
2856 pF @ 50 V
±20V
-
7.9W (Ta), 122W (Tc)
4.3mOhm @ 44A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-DFN (5x6.15)
8-PowerVDFN