圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 5.1A SOT223
|
封裝: TO-261-4, TO-261AA |
庫存639,876 |
|
MOSFET (Metal Oxide) | 55V | 5.1A (Ta) | 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | ±20V | - | 1W (Ta) | 57.5 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
ON Semiconductor |
MOSFET P-CH 30V 3.5A MCPH6
|
封裝: 6-SMD, Flat Leads |
庫存15,456 |
|
MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | - | 5nC @ 10V | 250pF @ 10V | ±20V | - | 1.5W (Ta) | 98 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
||
Vishay Siliconix |
MOSFET P-CH 20V 670MA SOT323-3
|
封裝: SC-70, SOT-323 |
庫存2,439,240 |
|
MOSFET (Metal Oxide) | 20V | 670mA (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 2.2nC @ 4.5V | - | ±12V | - | 290mW (Ta) | 430 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
||
Vishay Siliconix |
MOSFET N-CH 50V 30A TO-220AB
|
封裝: TO-220-3 |
庫存85,104 |
|
MOSFET (Metal Oxide) | 50V | 30A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 1600pF @ 25V | ±20V | - | 74W (Tc) | 50 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存5,824 |
|
MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 360pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 3 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 400V 3.1A I-PAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存9,876 |
|
MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 350pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 1.8 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 500V 18A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存390,600 |
|
MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1950pF @ 25V | ±25V | - | 140W (Tc) | 190 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
封裝: 8-PowerTDFN |
庫存4,592 |
|
MOSFET (Metal Oxide) | 40V | - | 10V | 3.5V @ 250µA | 86nC @ 10V | 6100pF @ 25V | ±20V | - | 3.9W (Ta), 166W (Tc) | 0.92 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET NCH 600V 11A POWERFLAT
|
封裝: 8-PowerVDFN |
庫存6,032 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 21.5nC @ 10V | 791pF @ 100V | ±25V | - | 90W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (8x8) HV | 8-PowerVDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存2,544 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 86nC @ 10V | 6776pF @ 25V | ±20V | - | 300W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 500V 80A PLUS247
|
封裝: TO-247-3 |
庫存6,592 |
|
MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 6.5V @ 8mA | 200nC @ 10V | 10000pF @ 25V | ±30V | - | 1250W (Tc) | 65 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 9A TO220
|
封裝: TO-220-3 Full Pack |
庫存18,288 |
|
MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 4V @ 140µA | 13nC @ 10V | 555pF @ 400V | ±30V | - | 22W (Tc) | 360 mOhm @ 2.7A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 30V 37A TDSON-8
|
封裝: 8-PowerTDFN |
庫存41,520 |
|
MOSFET (Metal Oxide) | 30V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 68nC @ 10V | 4300pF @ 15V | ±20V | - | 2.5W (Ta), 96W (Tc) | 1.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N CH 80V 120A TO-220
|
封裝: TO-220-3 |
庫存5,392 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.5V @ 250µA | 133nC @ 10V | 9450pF @ 40V | ±20V | - | 214W (Tc) | 3.9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 2.6A IPAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存14,952 |
|
MOSFET (Metal Oxide) | 800V | 2.6A (Tc) | 10V | 4.5V @ 260µA | 14nC @ 10V | 585pF @ 100V | ±20V | - | 39W (Tc) | 2.25 Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 30V 5.9A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存548,520 |
|
MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 2.5V, 10V | 2V @ 250µA | 10nC @ 4.5V | - | ±12V | - | 1.31W (Ta) | 23 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 30V 3.1A SOT23-3
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存1,075,188 |
|
MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 4.5V, 10V | 3V @ 250µA | 21nC @ 10V | 540pF @ 15V | ±20V | - | 750mW (Ta) | 53 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Goford Semiconductor |
MOSFET N-CH 60V 5.5A SOT-23-3L
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 5.5A | - | 2.5V @ 250µA | - | 765 pF @ 30 V | ±20V | - | 960mW | 42mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3
|
封裝: - |
庫存5,253 |
|
MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4V @ 250µA | 154 nC @ 10 V | 10300 pF @ 25 V | ±20V | - | 125W (Tc) | 4.7mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Panjit International Inc. |
500V N-CHANNEL MOSFET
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 5A (Ta) | 10V | 4V @ 250µA | 11 nC @ 10 V | 491 pF @ 25 V | ±30V | - | 87.5W (Tc) | 1.55Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Panjit International Inc. |
30V P-CHANNEL ENHANCEMENT MODE M
|
封裝: - |
庫存5,430 |
|
MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 26 nC @ 4.5 V | 3168 pF @ 15 V | ±20V | - | 1.7W (Ta) | 9.5mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Harris Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 800mA (Tc) | 10V | 4V @ 250µA | 7 nC @ 10 V | 135 pF @ 25 V | ±20V | - | 1W (Tc) | 800mOhm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip | 4-DIP (0.300", 7.62mm) |
||
Micro Commercial Co |
N-CHANNEL MOSFET,DFN8080A
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 20A | 10V | 4V @ 250µA | 36 nC @ 10 V | 1336 pF @ 25 V | ±30V | - | 196W | 219mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN8080A | 4-PowerVSFN |
||
Panjit International Inc. |
MOSFET 20V 750MA SOT-23
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 750mA (Ta) | 1.2V, 4.5V | 1V @ 250µA | 1.4 nC @ 4.5 V | 67 pF @ 10 V | ±10V | - | 500mW (Ta) | 400mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
NFET DPAK SPCL 60V TR
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 50A (Tc) | 10V | 4V @ 250nA | 160 nC @ 20 V | - | ±20V | - | 132W (Tc) | 22mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 60A TO247
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 5V @ 250µA | 120 nC @ 10 V | 5500 pF @ 100 V | ±25V | - | 446W (Tc) | 50mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |