頁 1074 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品

IRF3711STRLPBF

Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存117,240

MOSFET (Metal Oxide)

20V

110A (Tc)

4.5V, 10V

3V @ 250µA

44nC @ 4.5V

2980pF @ 10V

±20V

-

3.1W (Ta), 120W (Tc)

6 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AO3400A_101

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,584

-

GP2M005A050CG

Global Power Technologies Group

MOSFET N-CH 500V 4.5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 98.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存7,952

MOSFET (Metal Oxide)

500V

4.5A (Tc)

10V

5V @ 250µA

15nC @ 10V

645pF @ 25V

±30V

-

98.4W (Tc)

1.5 Ohm @ 2.25A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

GP1M003A050PG

Global Power Technologies Group

MOSFET N-CH 500V 2.5A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

庫存3,008

MOSFET (Metal Oxide)

500V

2.5A (Tc)

10V

4V @ 250µA

9.2nC @ 10V

395pF @ 25V

±30V

-

52W (Tc)

2.8 Ohm @ 1.25A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

JAN2N6796U

Microsemi Corporation

MOSFET N-CH 18-LCC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 195 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-BQFN Exposed Pad

封裝: 18-BQFN Exposed Pad

庫存5,872

MOSFET (Metal Oxide)

100V

8A (Tc)

10V

4V @ 250µA

28.51nC @ 10V

-

±20V

-

800mW (Ta), 25W (Tc)

195 mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

18-ULCC (9.14x7.49)

18-BQFN Exposed Pad

RJK6035DPP-E0#T2

Renesas Electronics America

MOSFET N-CH 600V 6A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 29.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.37 Ohm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存5,920

MOSFET (Metal Oxide)

600V

6A (Ta)

10V

-

20nC @ 10V

765pF @ 25V

±30V

-

29.5W (Tc)

1.37 Ohm @ 3A, 10V

150°C (TJ)

Through Hole

TO-220FP

TO-220-3 Full Pack

NTD4865NT4G

ON Semiconductor

MOSFET N-CH 25V 8.5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 12V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc)
Rds On (Max) @ Id, Vgs: 10.9 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存121,380

MOSFET (Metal Oxide)

25V

8.5A (Ta), 44A (Tc)

4.5V, 10V

2.5V @ 250µA

10.8nC @ 4.5V

827pF @ 12V

±20V

-

1.27W (Ta), 33.3W (Tc)

10.9 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

IXTV18N60P

IXYS

MOSFET N-CH 600V 18A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

封裝: TO-220-3, Short Tab

庫存2,432

MOSFET (Metal Oxide)

600V

18A (Tc)

10V

5.5V @ 250µA

49nC @ 10V

2500pF @ 25V

±30V

-

360W (Tc)

420 mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

FQH140N10

Fairchild/ON Semiconductor

MOSFET N-CH 100V 140A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存103,464

MOSFET (Metal Oxide)

100V

140A (Tc)

10V

4V @ 250µA

285nC @ 10V

7900pF @ 25V

±25V

-

375W (Tc)

10 mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247

TO-247-3

FQB5N60TM

Fairchild/ON Semiconductor

MOSFET N-CH 600V 5A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存5,552

MOSFET (Metal Oxide)

600V

5A (Tc)

10V

5V @ 250µA

20nC @ 10V

730pF @ 25V

±30V

-

3.13W (Ta), 120W (Tc)

2 Ohm @ 2.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HUFA76407D3ST

Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存3,024

MOSFET (Metal Oxide)

60V

12A (Tc)

4.5V, 10V

3V @ 250µA

11.3nC @ 10V

350pF @ 25V

±16V

-

38W (Tc)

92 mOhm @ 13A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPak (2 Leads + Tab), SC-63

FQE10N20LCTU

Fairchild/ON Semiconductor

MOSFET N-CH 200V 4A TO-126

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 12.8W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-126
Package / Case: TO-225AA, TO-126-3

封裝: TO-225AA, TO-126-3

庫存6,112

MOSFET (Metal Oxide)

200V

4A (Tc)

5V, 10V

2V @ 250µA

19nC @ 5V

490pF @ 25V

±20V

-

12.8W (Tc)

360 mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-126

TO-225AA, TO-126-3

IRF644NSPBF

Vishay Siliconix

MOSFET N-CH 250V 14A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存5,360

MOSFET (Metal Oxide)

250V

14A (Tc)

10V

4V @ 250µA

54nC @ 10V

1060pF @ 25V

±20V

-

150W (Tc)

240 mOhm @ 8.4A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFU9024

Vishay Siliconix

MOSFET P-CH 60V 8.8A I-PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

庫存225,192

MOSFET (Metal Oxide)

60V

8.8A (Tc)

10V

4V @ 250µA

19nC @ 10V

570pF @ 25V

±20V

-

2.5W (Ta), 42W (Tc)

280 mOhm @ 5.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-251AA

TO-251-3 Short Leads, IPak, TO-251AA

IPI200N25N3 G

Infineon Technologies

MOSFET N-CH 250V 64A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 64A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存4,096

MOSFET (Metal Oxide)

250V

64A (Tc)

10V

4V @ 270µA

86nC @ 10V

7100pF @ 100V

±20V

-

300W (Tc)

20 mOhm @ 64A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRF1404STRL

Infineon Technologies

MOSFET N-CH 40V 202A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,320

MOSFET (Metal Oxide)

40V

75A (Tc)

10V

4V @ 250µA

200nC @ 10V

7360pF @ 25V

±20V

-

3.8W (Ta), 200W (Tc)

4 mOhm @ 95A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRF7484QTR

Infineon Technologies

MOSFET N CH 40V 14A 8-SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 7V
Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存31,260

MOSFET (Metal Oxide)

40V

14A (Ta)

7V

2V @ 250µA

100nC @ 7V

3520pF @ 25V

±8V

-

2.5W (Ta)

10 mOhm @ 14A, 7V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

AUIRFS8405

Infineon Technologies

MOSFET N-CH 40V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 163W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存25,428

MOSFET (Metal Oxide)

40V

120A (Tc)

10V

3.9V @ 100µA

161nC @ 10V

5193pF @ 25V

±20V

-

163W (Tc)

2.3 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DMN2028UVT-7

Diodes Incorporated

MOSFET N-CH 20V 6.2A TSOT-26

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSOT-26
Package / Case: SOT-23-6 Thin, TSOT-23-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存6,224

MOSFET (Metal Oxide)

20V

6.2A (Ta)

2.5V, 4.5V

1.5V @ 250µA

8.3nC @ 4.5V

856pF @ 10V

±8V

-

1.2W (Ta)

24 mOhm @ 6.2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

TSOT-26

SOT-23-6 Thin, TSOT-23-6

STW22N95K5

STMicroelectronics

MOSFET N-CH 950V 17.5A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存10,500

MOSFET (Metal Oxide)

950V

17.5A (Tc)

10V

5V @ 100µA

48nC @ 10V

1550pF @ 100V

±30V

-

250W (Tc)

330 mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

IXTP76P10T

IXYS

MOSFET P-CH 100V 76A TO-220

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存41,400

MOSFET (Metal Oxide)

100V

76A (Tc)

10V

4V @ 250µA

197nC @ 10V

13700pF @ 25V

±15V

-

298W (Tc)

25 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRFS4127PBF

Infineon Technologies

MOSFET N-CH 200V 72A D2-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存65,028

MOSFET (Metal Oxide)

200V

72A (Tc)

10V

5V @ 250µA

150nC @ 10V

5380pF @ 50V

±20V

-

375W (Tc)

22 mOhm @ 44A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NTD3055L170T4G

ON Semiconductor

MOSFET N-CH 60V 9A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存800,844

MOSFET (Metal Oxide)

60V

9A (Ta)

5V

2V @ 250µA

10nC @ 5V

275pF @ 25V

±15V

-

1.5W (Ta), 28.5W (Tj)

170 mOhm @ 4.5A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

PMV100XPEA215

NXP Semiconductors

NEXPERIA PMV100 - P-CHANNEL MOSF

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 463mW (Ta), 4.45W (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

Request a Quote

MOSFET (Metal Oxide)

20 V

2.4A (Ta)

-

1.25V @ 250µA

6 nC @ 4.5 V

386 pF @ 10 V

±12V

-

463mW (Ta), 4.45W (Tc)

128mOhm @ 2.4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

RH6R025BHTB1

Rohm Semiconductor

NCH 150V 25A, HSMT8, POWER MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 59W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSMT (3.2x3)
Package / Case: 8-PowerVDFN

封裝: -

庫存8,490

MOSFET (Metal Oxide)

150 V

25A (Tc)

6V, 10V

4V @ 1mA

16.7 nC @ 10 V

1010 pF @ 75 V

±20V

-

59W (Tc)

60mOhm @ 25A, 10V

150°C (TJ)

Surface Mount

8-HSMT (3.2x3)

8-PowerVDFN

GSFP0449

Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -50.00A, -

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 82W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PPAK (5.1x5.71)
Package / Case: 8-PowerTDFN

封裝: -

庫存17,988

MOSFET (Metal Oxide)

40 V

50A (Tc)

4.5V, 10V

2.5V @ 250µA

56 nC @ 10 V

3100 pF @ 20 V

±20V

-

82W (Tc)

17mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PPAK (5.1x5.71)

8-PowerTDFN

TSM60NC196CM2-RNG

Taiwan Semiconductor Corporation

600V, 28A, SINGLE N-CHANNEL POWE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

庫存7,200

MOSFET (Metal Oxide)

600 V

28A (Tc)

10V

5V @ 1mA

39 nC @ 10 V

1566 pF @ 300 V

±20V

-

152W (Tc)

196mOhm @ 9.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AB (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

CPH3418-TL-H

Sanyo

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-