頁 1044 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  1,044/1,502
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封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRL2505STRR
Infineon Technologies

MOSFET N-CH 55V 104A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,432
MOSFET (Metal Oxide)
55V
104A (Tc)
4V, 10V
2V @ 250µA
130nC @ 5V
5000pF @ 25V
±16V
-
3.8W (Ta), 200W (Tc)
8 mOhm @ 54A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF3415S
Infineon Technologies

MOSFET N-CH 150V 43A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存36,048
MOSFET (Metal Oxide)
150V
43A (Tc)
10V
4V @ 250µA
200nC @ 10V
2400pF @ 25V
±20V
-
3.8W (Ta), 200W (Tc)
42 mOhm @ 22A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRL3803
Infineon Technologies

MOSFET N-CH 30V 140A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存90,432
MOSFET (Metal Oxide)
30V
140A (Tc)
4.5V, 10V
1V @ 250µA
140nC @ 4.5V
5000pF @ 25V
±16V
-
200W (Tc)
6 mOhm @ 71A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
AOT10T60P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存6,048
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
5V @ 250µA
40nC @ 10V
1595pF @ 100V
±30V
-
208W (Tc)
700 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
AOC2422
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 8V 3.5A 4WLCSP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 1.5A, 2.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-AphaDFN (0.97x0.97)
  • Package / Case: 4-XFBGA, CSPBGA
封裝: 4-XFBGA, CSPBGA
庫存2,784
MOSFET (Metal Oxide)
8V
3.5A (Ta)
1.2V, 2.5V
800mV @ 250µA
15nC @ 4.5V
870pF @ 4V
±5V
-
600mW (Ta)
33 mOhm @ 1.5A, 2.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-AphaDFN (0.97x0.97)
4-XFBGA, CSPBGA
AOC2417
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 3.5A 4WLCSP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1355pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 550mW (Ta)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-AlphaDFN (1.57x1.57)
  • Package / Case: 4-SMD, No Lead
封裝: 4-SMD, No Lead
庫存6,912
MOSFET (Metal Oxide)
20V
3.5A (Ta)
2.5V, 10V
1.4V @ 250µA
40nC @ 10V
1355pF @ 10V
±12V
-
550mW (Ta)
32 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
4-AlphaDFN (1.57x1.57)
4-SMD, No Lead
NP100P06PDG-E1-AY
Renesas Electronics America

MOSFET P-CH 60V 100A TO-263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,200
MOSFET (Metal Oxide)
60V
100A (Tc)
4.5V, 10V
2.5V @ 1mA
300nC @ 10V
15000pF @ 10V
±20V
-
1.8W (Ta), 200W (Tc)
6 mOhm @ 50A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTMS3P03R2G
ON Semiconductor

MOSFET P-CH 30V 2.34A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存82,992
MOSFET (Metal Oxide)
30V
2.34A (Ta)
4.5V, 10V
2.5V @ 250µA
25nC @ 10V
750pF @ 24V
±20V
-
730mW (Ta)
85 mOhm @ 3.05A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
NTD32N06L-001
ON Semiconductor

MOSFET N-CH 60V 32A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存6,672
MOSFET (Metal Oxide)
60V
32A (Ta)
5V
2V @ 250µA
50nC @ 5V
1700pF @ 25V
±20V
-
1.5W (Ta), 93.75W (Tj)
28 mOhm @ 16A, 5V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
IPB80P03P4L04ATMA1
Infineon Technologies

MOSFET P-CH 30V 80A TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 253µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 137W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存4,240
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2V @ 253µA
160nC @ 10V
11300pF @ 25V
+5V, -16V
-
137W (Tc)
4.1 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMG7N65SJ3
Diodes Incorporated

MOSFET BVDSS: 501V 650V TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3, IPak, Short Leads
封裝: TO-251-3, IPak, Short Leads
庫存7,168
MOSFET (Metal Oxide)
650V
5.5A (Tc)
10V
4V @ 250µA
25nC @ 10V
886pF @ 50V
±30V
-
125W (Tc)
1.4 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251
TO-251-3, IPak, Short Leads
hot RAL045P01TCR
Rohm Semiconductor

MOSFET P-CH 12V 4.5A TUMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V
  • Vgs (Max): -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
封裝: 6-SMD, Flat Leads
庫存72,000
MOSFET (Metal Oxide)
12V
4.5A (Ta)
1.5V, 4.5V
1V @ 1mA
40nC @ 4.5V
4200pF @ 6V
-8V
-
1W (Ta)
30 mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
TSM061NA03CV RGG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 44.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (3x3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存7,024
MOSFET (Metal Oxide)
30V
66A (Tc)
4.5V, 10V
2.5V @ 250µA
19.3nC @ 10V
1136pF @ 15V
±20V
-
44.6W (Tc)
6.1 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PDFN (3x3)
8-PowerWDFN
TSM3481CX6 RFG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -30V,

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.09nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1047.98pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
封裝: SOT-23-6
庫存7,760
MOSFET (Metal Oxide)
30V
5.7A (Ta)
4.5V, 10V
3V @ 250µA
18.09nC @ 10V
1047.98pF @ 15V
±20V
-
1.6W (Ta)
48 mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
hot FDP075N15A_F102
Fairchild/ON Semiconductor

MOSFET N-CH 150V 130A TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存19,128
MOSFET (Metal Oxide)
150V
130A (Tc)
10V
4V @ 250µA
100nC @ 10V
7350pF @ 75V
±20V
-
333W (Tc)
7.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
NDPL180N10BG
ON Semiconductor

MOSFET N-CH 180A 100V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 15V, 50A
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存6,492
MOSFET (Metal Oxide)
100V
180A (Ta)
10V, 15V
4V @ 1mA
95nC @ 10V
6950pF @ 50V
±20V
-
2.1W (Ta), 200W (Tc)
3 mOhm @ 15V, 50A
175°C (TJ)
Through Hole
TO-220-3
TO-220-3
NVTFS5820NLTAG
ON Semiconductor

MOSFET N-CH 60V 37A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1462pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存3,728
MOSFET (Metal Oxide)
60V
11A (Ta)
4.5V, 10V
2.3V @ 250µA
28nC @ 10V
1462pF @ 25V
±20V
-
3.2W (Ta), 21W (Tc)
11.5 mOhm @ 8.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
STI13NM60N
STMicroelectronics

MOSFET N-CH 600V 11A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存20,052
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4V @ 250µA
30nC @ 10V
790pF @ 50V
±25V
-
90W (Tc)
360 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot QS6U24TR
Rohm Semiconductor

MOSFET P-CH 30V 1A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存33,300
MOSFET (Metal Oxide)
30V
1A (Ta)
4V, 10V
2.5V @ 1mA
1.7nC @ 5V
90pF @ 10V
±20V
Schottky Diode (Isolated)
1.25W (Ta)
400 mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
BSC004NE2LS5ATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封裝: -
庫存10,230
MOSFET (Metal Oxide)
25 V
40A (Ta), 479A (Tc)
4.5V, 10V
2V @ 10mA
238 nC @ 10 V
11000 pF @ 12.5 V
±20V
-
2.5W (Ta), 188W (Tc)
0.45mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
NTBG014N120M3P
onsemi

SIC MOSFET 1200 V 14 MOHM M3P SE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.63V @ 37mA
  • Gate Charge (Qg) (Max) @ Vgs: 337 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6313 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 454W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封裝: -
庫存1,581
SiCFET (Silicon Carbide)
1200 V
104A (Tc)
15V, 18V
4.63V @ 37mA
337 nC @ 18 V
6313 pF @ 800 V
+22V, -10V
-
454W (Tc)
20mOhm @ 74A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SQP50P03-07_GE3
Vishay Siliconix

MOSFET P-CH 30V 50A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
155 nC @ 10 V
5380 pF @ 25 V
±20V
-
150W (Tc)
7mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
MCU40N10-TP
Micro Commercial Co

MOSFET N-CH 100VDS 20VGS 40A 160

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
MOSFET (Metal Oxide)
100 V
40A
10V
2.5V @ 250µA
94 nC @ 10 V
3400 pF @ 30 V
±20V
-
1.25W
17mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SISA14BDN-T1-GE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 917 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
封裝: -
庫存42,060
MOSFET (Metal Oxide)
30 V
21A (Ta), 72A (Tc)
4.5V, 10V
2.2V @ 250µA
22 nC @ 10 V
917 pF @ 15 V
+20V, -16V
-
3.8W (Ta), 45W (Tc)
5.38mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
DMT6015LFVW-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
10A (Ta), 31.8A (Tc)
4.5V, 10V
2.5V @ 250µA
15.7 nC @ 10 V
808 pF @ 30 V
±16V
-
2.8W (Ta), 28.4W (Tc)
16mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
MCT08P10Y-TP
Micro Commercial Co

P-CHANNEL MOSFET,SOT-223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 80 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: -
庫存15,978
MOSFET (Metal Oxide)
100 V
8A
4.5V, 10V
2.5V @ 250µA
20 nC @ 10 V
1050 pF @ 80 V
±20V
-
2.2W
110mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
TPIC5621LDW
Texas Instruments

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PJW5P03_R2_00001
Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: -
Request a Quote
MOSFET (Metal Oxide)
30 V
4.6A (Ta)
4.5V, 10V
2.5V @ 250µA
4.8 nC @ 4.5 V
516 pF @ 15 V
±20V
-
1.6W (Ta)
50mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA