圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存3,696 |
|
MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4V @ 40µA | 56nC @ 10V | 4500pF @ 25V | ±20V | - | 79W (Tc) | 6.9 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 61A TO220FP
|
封裝: TO-220-3 Full Pack |
庫存100,344 |
|
MOSFET (Metal Oxide) | 30V | 61A (Tc) | 4.5V, 10V | 1V @ 250µA | 110nC @ 4.5V | 3500pF @ 25V | ±16V | - | 47W (Tc) | 7 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 30V 30A TO-251
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存6,704 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 50µA | 39.4nC @ 10V | 1460pF @ 25V | ±20V | - | 82W (Tc) | 10 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | P-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Global Power Technologies Group |
MOSFET N-CH 500V 8.5A TO220
|
封裝: TO-220-3 |
庫存3,536 |
|
MOSFET (Metal Oxide) | 500V | 8.5A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 1195pF @ 25V | ±30V | - | 127W (Tc) | 850 mOhm @ 4.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Microsemi Corporation |
MOSFET P-CH 100V 18-LCC
|
封裝: 18-BQFN Exposed Pad |
庫存6,288 |
|
MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 10V | 4V @ 250µA | 34.8nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 300 mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
封裝: TO-220-3 |
庫存6,128 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 3607pF @ 100V | ±30V | - | 463W (Tc) | 260 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Diodes Incorporated |
MOSFET NCH 30V 100A POWERDI
|
封裝: 8-PowerTDFN |
庫存7,136 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2V @ 1mA | 77nC @ 10V | 5000pF @ 15V | ±16V | - | 1.2W (Ta), 136W (Tc) | 1.6 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET P-CH 100V 0.7A CPH3
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存5,264 |
|
MOSFET (Metal Oxide) | 100V | 700mA (Ta) | 4V, 10V | 2.6V @ 1mA | 3.7nC @ 10V | 142pF @ 20V | ±20V | - | 1W (Ta) | 1.7 Ohm @ 700mA, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET P-CH 50V 0.18A SOT23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存3,328 |
|
MOSFET (Metal Oxide) | 50V | 180mA (Ta) | 5V | 2V @ 1mA | - | 24.6pF @ 25V | ±30V | - | 310mW (Ta) | 10 Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 40V 80A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存123,840 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 5V, 10V | 3V @ 250µA | 80nC @ 10V | 4300pF @ 25V | ±20V | - | 110W (Tc) | 4 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 90A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存4,048 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 10V | 2.8V @ 1mA | 78nC @ 10V | 4707pF @ 25V | ±16V | - | 158W (Tc) | 4.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 257A TO247
|
封裝: TO-247-3 |
庫存17,772 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | ±20V | - | 375W (Tc) | 2.5 mOhm @ 170A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET P-CH 55V 31A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存49,092 |
|
MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | ±20V | - | 110W (Tc) | 65 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CHA 60V 10.2A POWERDI
|
封裝: 8-PowerTDFN |
庫存3,216 |
|
MOSFET (Metal Oxide) | 60V | 10.2A (Ta), 70A (Tc) | 4.5V, 10V | 2V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | ±16V | - | 2.3W (Ta), 113W (Tc) | 12 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET P-CH 20V 2.5A WEMT6
|
封裝: SOT-563, SOT-666 |
庫存86,580 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 21nC @ 4.5V | 1300pF @ 10V | ±10V | - | 700mW (Ta) | 65 mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
||
ON Semiconductor |
MOSFET N-CH 100V 19A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存180,516 |
|
MOSFET (Metal Oxide) | 100V | 19A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 40nC @ 10V | 1000pF @ 25V | ±20V | - | 71W (Tc) | 74 mOhm @ 19A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET P-CH 40V 110A D2PAK
|
封裝: - |
庫存2,079 |
|
MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 3V @ 250µA | 255 nC @ 10 V | 8320 pF @ 20 V | ±16V | - | 333W (Tj) | 2.6mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Micro Commercial Co |
MOSFET N-CH 100V 35A DFN5060
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 35A (Tj) | - | 4V @ 250µA | 25 nC @ 10 V | 1223 pF @ 50 V | ±20V | - | 35W | 17.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 150.00A, 6
|
封裝: - |
庫存4,800 |
|
MOSFET (Metal Oxide) | 60 V | 150A (Tc) | 10V | 4V @ 250µA | 130.8 nC @ 10 V | 5451 pF @ 30 V | ±20V | - | 220W (Tc) | 4mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Micro Commercial Co |
MOSFET P-CH 60V 60A DPAK
|
封裝: - |
庫存40,194 |
|
MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 3.5V @ 250µA | 75 nC @ 10 V | 5814 pF @ 25 V | ±20V | - | 130W (Tc) | 18mOhm @ 20A, 10V | -55°C ~ 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Fairchild Semiconductor |
TRANS MOSFET N-CH 250V 8.1A T/R
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 61V-100V SO-8 T&R
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 12A (Ta), 42A (Tc) | 10V | 4V @ 250µA | 29.8 nC @ 10 V | 2085 pF @ 50 V | ±20V | - | 1.4W (Ta) | 9mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | - | - | - |
||
onsemi |
P-CHANNEL LOGIC LEVEL POWERTRENC
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 24 nC @ 5 V | 1604 pF @ 15 V | ±25V | - | 1W (Ta) | 20mOhm @ 8.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET P-CH 60V 100A TO263-3
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2V @ 5.55mA | 281 nC @ 10 V | 8500 pF @ 30 V | ±20V | - | 300W (Tc) | 11mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
PCH 2.5V DRIVE SERIES
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI333
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 87A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40 nC @ 10 V | 2387 pF @ 15 V | ±20V | - | 1.3W (Ta) | 5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
YAGEO XSEMI |
MOSFET P-CH 30V 9.3A 8SO
|
封裝: - |
庫存3,000 |
|
MOSFET (Metal Oxide) | 30 V | 9.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 19.2 nC @ 4.5 V | 2080 pF @ 15 V | ±20V | - | 2.5W (Ta) | 20mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC |
||
Panjit International Inc. |
600V N-CHANNEL SUPER JUNCTION MO
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 1.2A (Ta), 7A (Tc) | 10V | 4V @ 250µA | 21 nC @ 10 V | 457 pF @ 25 V | ±20V | - | 2W (Ta), 78W (Tc) | 620mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |