頁 83 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 805
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

電晶體 - FET、MOSFET - RF

記錄 3,855
頁  83/138
圖片
零件編號
製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTF210451E V1
Infineon Technologies

IC FET RF LDMOS 45W H-30265-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30265-2
封裝: 2-Flatpack, Fin Leads
庫存2,832
2.17GHz
14dB
28V
1µA
-
500mA
45W
65V
2-Flatpack, Fin Leads
H-30265-2
ARF441
Microsemi Corporation

PWR MOSFET RF N-CH 150V TO-247AD

  • Transistor Type: N-Channel
  • Frequency: 13.56MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: 11A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 125W
  • Voltage - Rated: 150V
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,608
13.56MHz
21dB
50V
11A
-
200mA
125W
150V
-
-
MRF8S21100HSR5
NXP

FET RF 65V 2.17GHZ NI780HS

  • Transistor Type: N-Channel
  • Frequency: 2.17GHz
  • Gain: 18.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封裝: NI-780
庫存3,056
2.17GHz
18.3dB
28V
-
-
700mA
24W
65V
NI-780
NI-780
MRF8HP21130HSR3
NXP

FET RF 2CH 65V 2.17GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
封裝: NI-780S-4
庫存5,856
2.17GHz
14dB
28V
-
-
360mA
28W
65V
NI-780S-4
NI-780S-4
MRFE6VP8600HSR6
NXP

FET RF 2CH 130V 860MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 19.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 125W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
封裝: NI-1230S
庫存5,648
860MHz
19.3dB
50V
-
-
1.4A
125W
130V
NI-1230S
NI-1230S
BLF6G22L-40BN,118
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1112A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 345mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112A
  • Supplier Device Package: CDFM6
封裝: SOT-1112A
庫存6,960
2.11GHz ~ 2.17GHz
19dB
28V
-
-
345mA
2.5W
65V
SOT-1112A
CDFM6
BLF6G10L-40BRN,118
Ampleon USA Inc.

RF FET LDMOS 65V 23DB SOT1112A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 788.5MHz ~ 823.5MHz
  • Gain: 23dB
  • Voltage - Test: 28V
  • Current Rating: 11A
  • Noise Figure: -
  • Current - Test: 390mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112A
  • Supplier Device Package: CDFM6
封裝: SOT-1112A
庫存7,568
788.5MHz ~ 823.5MHz
23dB
28V
11A
-
390mA
2.5W
65V
SOT-1112A
CDFM6
BLF6G22-180PN,135
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封裝: SOT539A
庫存3,984
2.11GHz ~ 2.17GHz
17.5dB
32V
-
-
1.6A
50W
65V
SOT539A
SOT539A
MRF7P20040HR5
NXP

FET RF 2CH 65V 2.03GHZ NI780H-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.03GHz
  • Gain: 18.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
封裝: NI-780-4
庫存6,432
2.03GHz
18.2dB
32V
-
-
150mA
10W
65V
NI-780-4
NI-780-4
BLF6G27LS-75,112
Ampleon USA Inc.

RF FET LDMOS 65V SOT502B

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封裝: SOT-502B
庫存7,488
-
-
28V
18A
-
600mA
9W
65V
SOT-502B
SOT502B
MRF9085LSR5
NXP

FET RF 65V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 17.9dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 90W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存6,288
880MHz
17.9dB
26V
-
-
700mA
90W
65V
NI-780S
NI-780S
ATF-36077-STR
Broadcom Limited

FET RF 3V 12GHZ 77-SMD

  • Transistor Type: pHEMT FET
  • Frequency: 12GHz
  • Gain: 12dB
  • Voltage - Test: 1.5V
  • Current Rating: 45mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: 5dBm
  • Voltage - Rated: 3V
  • Package / Case: 4-SMD (77 Pack)
  • Supplier Device Package: 77
封裝: 4-SMD (77 Pack)
庫存2,080
12GHz
12dB
1.5V
45mA
0.5dB
10mA
5dBm
3V
4-SMD (77 Pack)
77
hot BF256C
Fairchild/ON Semiconductor

JFET N-CH 30V 18MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 18mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存23,400
-
-
-
18mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BF908,215
NXP

MOSFET N-CH 12V 40MA SOT143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 8V
  • Current Rating: 40mA
  • Noise Figure: 0.6dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存5,280
200MHz
-
8V
40mA
0.6dB
15mA
-
12V
TO-253-4, TO-253AA
SOT-143B
PTVA120251EAV1R250XTMA1
Infineon Technologies

IC RF LDMOS FET H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 500MHz ~ 1.4GHz
  • Gain: 15.8dB
  • Voltage - Test: -
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 34W
  • Voltage - Rated: 105V
  • Package / Case: H-36265-2
  • Supplier Device Package: H-36265-2
封裝: H-36265-2
庫存4,208
500MHz ~ 1.4GHz
15.8dB
-
10µA
-
-
34W
105V
H-36265-2
H-36265-2
MMRF1023HSR5
NXP

FET RF 65V 2.3GHZ NI-1230-4LS2L

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz
  • Gain: 14.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 66W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
封裝: NI-1230-4LS2L
庫存2,624
2.3GHz
14.9dB
28V
-
-
750mA
66W
65V
NI-1230-4LS2L
NI-1230-4LS2L
BLF2324M8LS200PJ
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封裝: SOT539B
庫存4,096
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539B
SOT539B
BLC9G20LS-150PVY
Ampleon USA Inc.

BLC9G20LS-150PV/SOT1275/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,720
-
-
-
-
-
-
-
-
-
-
475-102N20A-00
IXYS

RF MOSFET N-CHANNEL DE475

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1800W
  • Voltage - Rated: 1000V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE475
封裝: 6-SMD, Flat Lead Exposed Pad
庫存5,008
30MHz
-
-
1mA
-
-
1800W
1000V
6-SMD, Flat Lead Exposed Pad
DE475
BLC9G20LS-120VY
Ampleon USA Inc.

RF FET LDMOS 65V 19.2DB SOT12753

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: DFM6
封裝: SOT1275-3
庫存4,976
1.81GHz ~ 1.88GHz
19.2dB
28V
-
-
700mA
120W
65V
SOT1275-3
DFM6
PD54003L-E
STMicroelectronics

TRANSISTOR RF 5X5 POWERFLAT

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 20dB
  • Voltage - Test: 7.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 25V
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFLAT? (5x5)
封裝: 8-PowerVDFN
庫存29,520
500MHz
20dB
7.5V
4A
-
50mA
3W
25V
8-PowerVDFN
PowerFLAT? (5x5)
PTFB182503FL-V2-R0
MACOM Technology Solutions

RF MOSFET 30V H-33288-6

  • Transistor Type: -
  • Frequency: 1.88GHz
  • Gain: 19dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.85 A
  • Power - Output: 50W
  • Voltage - Rated: 65 V
  • Package / Case: H-33288-6
  • Supplier Device Package: H-33288-6
封裝: -
Request a Quote
1.88GHz
19dB
30 V
-
-
1.85 A
50W
65 V
H-33288-6
H-33288-6
MWT-LN300
CML Microcircuits

RF MOSFET PHEMT FET 2.5V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 26GHz
  • Gain: 10dB
  • Voltage - Test: 2.5 V
  • Current Rating: -
  • Noise Figure: 0.6dB
  • Current - Test: 25 mA
  • Power - Output: -
  • Voltage - Rated: 4 V
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
庫存1,371
26GHz
10dB
2.5 V
-
0.6dB
25 mA
-
4 V
Die
Die
GTVA104001FA-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 50V H-37265J-2

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 19.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 400W
  • Voltage - Rated: 125 V
  • Package / Case: H-37265J-2
  • Supplier Device Package: H-37265J-2
封裝: -
庫存129
960MHz ~ 1.215GHz
19.5dB
50 V
-
-
100 mA
400W
125 V
H-37265J-2
H-37265J-2
PXAC192908FV-V1
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
1011GN-2200VP
Microchip Technology

RF MOSFET HEMT 50V

  • Transistor Type: HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 19.4dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 2200W
  • Voltage - Rated: 150 V
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
Request a Quote
1.03GHz ~ 1.09GHz
19.4dB
50 V
-
-
300 mA
2200W
150 V
Module
-
0912GN-300V
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 18dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 300W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
封裝: -
Request a Quote
960MHz ~ 1.215GHz
18dB
50 V
-
-
60 mA
300W
150 V
55-KR
55-KR
PTFB213208FV-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 2.6 A
  • Power - Output: 320W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
封裝: -
Request a Quote
2.11GHz ~ 2.17GHz
17dB
28 V
10µA
-
2.6 A
320W
65 V
H-37275G-6/2
H-37275G-6/2