頁 64 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - RF

記錄 3,855
頁  64/138
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製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA101K02EVV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,008
-
-
-
-
-
-
-
-
-
-
PTVA030121EAV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,232
-
-
-
-
-
-
-
-
-
-
PTF240101S V1
Infineon Technologies

FET RF 65V 2.68GHZ H-32259-2

  • Transistor Type: LDMOS
  • Frequency: 2.68GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: H32259-2
  • Supplier Device Package: H-32259-2
封裝: H32259-2
庫存7,120
2.68GHz
16dB
28V
1µA
-
180mA
10W
65V
H32259-2
H-32259-2
MAGX-000912-500L00
M/A-Com Technology Solutions

FETS RF GAN 500W 960-1215MHZ

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 20.5dB
  • Voltage - Test: 50V
  • Current Rating: 15.7A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 500W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,256
960MHz ~ 1.215GHz
20.5dB
50V
15.7A
-
400mA
500W
65V
-
-
BLF6H10L-160,112
Ampleon USA Inc.

RF FET LDMOS 104V 20DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 952.5MHz ~ 957.5MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 38W
  • Voltage - Rated: 104V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
封裝: SOT467C
庫存3,056
952.5MHz ~ 957.5MHz
20dB
50V
-
-
600mA
38W
104V
SOT467C
SOT467C
BLF6G22L-40BN,112
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1112A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 345mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112A
  • Supplier Device Package: CDFM6
封裝: SOT-1112A
庫存4,368
2.11GHz ~ 2.17GHz
19dB
28V
-
-
345mA
2.5W
65V
SOT-1112A
CDFM6
MRF8P23080HR3
NXP

FET RF 2CH 65V 2.3GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz
  • Gain: 14.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
封裝: NI-780-4
庫存5,024
2.3GHz
14.6dB
28V
-
-
280mA
16W
65V
NI-780-4
NI-780-4
PD55003
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
封裝: PowerSO-10 Exposed Bottom Pad
庫存7,344
500MHz
17dB
12.5V
2.5A
-
50mA
3W
40V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
MRFG35010AR1
NXP

FET RF 15V 3.55GHZ NI360HF

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 140mA
  • Power - Output: 1W
  • Voltage - Rated: 15V
  • Package / Case: NI-360HF
  • Supplier Device Package: NI-360HF
封裝: NI-360HF
庫存4,272
3.55GHz
10dB
12V
-
-
140mA
1W
15V
NI-360HF
NI-360HF
MRF6S9160HSR3
NXP

FET RF 68V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存7,024
880MHz
20.9dB
28V
-
-
1.2A
35W
68V
NI-780S
NI-780S
hot MRF6S23100HSR3
NXP

FET RF 68V 2.4GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 15.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 20W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存4,464
2.4GHz
15.4dB
28V
-
-
1A
20W
68V
NI-780S
NI-780S
hot J310
Fairchild/ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 450MHz
  • Gain: 12dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: 3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存3,696
450MHz
12dB
10V
60mA
3dB
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot MRF7S19170HSR3
NXP

FET RF 65V 1.99GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
封裝: NI-880S
庫存22,836
1.99GHz
17.2dB
28V
-
-
1.4A
50W
65V
NI-880S
NI-880S
BLC10G20LS-240PWTY
Ampleon USA Inc.

BLC10G20LS-240PWT/SOT1275/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,416
-
-
-
-
-
-
-
-
-
-
PD85006-E
STMicroelectronics

FET RF 40V 870MHZ PWRSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17dB
  • Voltage - Test: 13.6V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 6W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
封裝: PowerSO-10 Exposed Bottom Pad
庫存3,856
870MHz
17dB
13.6V
2A
-
200mA
6W
40V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
BLP05H6250XRGY
Ampleon USA Inc.

RF FET LDMOS 135V 27DB SOT12242

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1224-2
  • Supplier Device Package: -
封裝: SOT-1224-2
庫存6,064
108MHz
27dB
50V
-
-
100mA
250W
135V
SOT-1224-2
-
BLL8H1214LS-500U
Ampleon USA Inc.

RF FET LDMOS 100V 17DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 500W
  • Voltage - Rated: 100V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封裝: SOT539B
庫存4,896
1.2GHz ~ 1.4GHz
17dB
50V
-
-
150mA
500W
100V
SOT539B
SOT539B
CGHV27060MP
Cree/Wolfspeed

IC HEMT TRANS 60W 50V 2700MZ

  • Transistor Type: HEMT
  • Frequency: 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 50V
  • Current Rating: 6.3A
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 80W
  • Voltage - Rated: 150V
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
封裝: 20-TSSOP (0.173", 4.40mm Width)
庫存5,168
2.7GHz
16.5dB
50V
6.3A
-
125mA
80W
150V
20-TSSOP (0.173", 4.40mm Width)
20-TSSOP
PD85025S-E
STMicroelectronics

FET RF 40V 870MHZ

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17.3dB
  • Voltage - Test: 13.6V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 10W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
封裝: PowerSO-10 Exposed Bottom Pad
庫存7,908
870MHz
17.3dB
13.6V
7A
-
300mA
10W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
BLP05H6150XRY
Ampleon USA Inc.

RF FET LDMOS 135V 27DB SOT12232

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 150W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1223-2
  • Supplier Device Package: 4-HSOPF
封裝: SOT-1223-2
庫存6,576
108MHz
27dB
50V
-
-
100mA
150W
135V
SOT-1223-2
4-HSOPF
BF862,235
NXP

JFET N-CH 20V 25MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,000
-
-
-
25mA
-
-
-
20V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
VRF164FL
Microchip Technology

RF MOSFET (VDMOS) 170 V 600 W 30

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 2MHz ~ 100MHz
  • Gain: 21dB
  • Voltage - Test: 50 V
  • Current Rating: 4mA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: -
  • Voltage - Rated: 170 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-SMD
封裝: -
Request a Quote
2MHz ~ 100MHz
21dB
50 V
4mA
-
800 mA
-
170 V
4-SMD, Flat Leads
4-SMD
BLP15M9S100GXY
Ampleon USA Inc.

RF MOSFET LDMOS 32V TO270

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 15.7dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 100W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2G-1
封裝: -
Request a Quote
1.5GHz
15.7dB
32 V
1.4µA
-
600 mA
100W
65 V
TO-270BA
TO-270-2G-1
SAV-551
Mini-Circuits

RF MOSFET E-PHEMT 3V MMM1362

  • Transistor Type: E-pHEMT
  • Frequency: 45MHz ~ 6GHz
  • Gain: 20.9dB
  • Voltage - Test: 3 V
  • Current Rating: -
  • Noise Figure: 1.8dB
  • Current - Test: 15 mA
  • Power - Output: 20dBm
  • Voltage - Rated: 5 V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: MMM1362
封裝: -
庫存231
45MHz ~ 6GHz
20.9dB
3 V
-
1.8dB
15 mA
20dBm
5 V
SC-82A, SOT-343
MMM1362
RF2L42008CG2
STMicroelectronics

RF MOSFET LDMOS E2

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 4.2GHz
  • Gain: 14.5dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 8W
  • Voltage - Rated: 65 V
  • Package / Case: E2
  • Supplier Device Package: E2
封裝: -
Request a Quote
700MHz ~ 4.2GHz
14.5dB
-
1µA
-
-
8W
65 V
E2
E2
BLC9H10XS-606AYZ
Ampleon USA Inc.

RF MOSFET LDMOS 48V SOT1250-4

  • Transistor Type: LDMOS
  • Frequency: 616MHz ~ 960MHz
  • Gain: 18dB
  • Voltage - Test: 48 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.8 A
  • Power - Output: 600W
  • Voltage - Rated: 110 V
  • Package / Case: SOT-1250-4
  • Supplier Device Package: SOT1250-4
封裝: -
Request a Quote
616MHz ~ 960MHz
18dB
48 V
1.4µA
-
1.8 A
600W
110 V
SOT-1250-4
SOT1250-4
MHT1807T1
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A5G35S008NT6
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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