頁 55 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 807
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

電晶體 - FET、MOSFET - RF

記錄 3,855
頁  55/138
圖片
零件編號
製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTAB182002TCV2R250XTMA1
Infineon Technologies

IC RF FET LDMOS 190W H-49248H-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 14.8dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 520mA
  • Power - Output: 29W
  • Voltage - Rated: 65V
  • Package / Case: H-49248H-4
  • Supplier Device Package: H-49248H-4
封裝: H-49248H-4
庫存3,136
1.805GHz ~ 1.88GHz
14.8dB
28V
10µA
-
520mA
29W
65V
H-49248H-4
H-49248H-4
MAGX-000035-015000
M/A-Com Technology Solutions

TRANSISTOR GAN 3.5GHZ 15W

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 3GHz
  • Gain: 15.5dB
  • Voltage - Test: 50V
  • Current Rating: 800mA
  • Noise Figure: -
  • Current - Test: 15mA
  • Power - Output: 500mW
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,648
0Hz ~ 3GHz
15.5dB
50V
800mA
-
15mA
500mW
65V
-
-
BLF6G27LS-100,118
NXP

TRANS PWR LDMOS SOT502

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: 29A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 14W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
封裝: SOT-502A
庫存4,128
2.5GHz ~ 2.7GHz
17dB
28V
29A
-
900mA
14W
65V
SOT-502A
LDMOST
MRF21010LR5
NXP

FET RF 65V 2.17GHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
封裝: NI-360
庫存4,944
2.11GHz ~ 2.17GHz
13.5dB
28V
-
-
100mA
10W
65V
NI-360
NI-360
MRF5S19100HR3
NXP

FET RF 65V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封裝: NI-780
庫存6,128
1.93GHz ~ 1.99GHz
13.9dB
28V
-
-
1A
22W
65V
NI-780
NI-780
BF1212,215
NXP

MOSFET N-CH DUAL GATE 6V SOT143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 30dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 12mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存3,456
400MHz
30dB
5V
30mA
0.9dB
12mA
-
6V
TO-253-4, TO-253AA
SOT-143B
BF1205,115
NXP

FET RF 10V 800MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: 26dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1.2dB
  • Current - Test: 12mA
  • Power - Output: -
  • Voltage - Rated: 10V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
封裝: 6-TSSOP, SC-88, SOT-363
庫存6,480
800MHz
26dB
5V
30mA
1.2dB
12mA
-
10V
6-TSSOP, SC-88, SOT-363
6-TSSOP
GTVA261701FAV1R2XTMA1
Infineon Technologies

GAN SIC

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,904
-
-
-
-
-
-
-
-
-
-
PTFA220121MV4XUMA1
Infineon Technologies

FET RF LDMOS 10W SON10

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 9.3W
  • Voltage - Rated: 65V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
封裝: 10-LDFN Exposed Pad
庫存2,416
2.14GHz
16.2dB
28V
-
-
150mA
9.3W
65V
10-LDFN Exposed Pad
PG-SON-10
MRFE6VP61K25GNR6
NXP

TRANS RF LDMOS 1250W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 23dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: OM-1230G-4L
  • Supplier Device Package: OM-1230G-4L
封裝: OM-1230G-4L
庫存4,624
230MHz
23dB
50V
-
-
100mA
1250W
133V
OM-1230G-4L
OM-1230G-4L
BLF7G22LS-250P,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 65A
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: CDFM4
封裝: SOT539B
庫存7,840
2.11GHz ~ 2.17GHz
18.5dB
28V
65A
-
1.9A
70W
65V
SOT539B
CDFM4
VRF148AMP
Microsemi Corporation

RF MOSFET N-CHANNEL 50V M113

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 16dB
  • Voltage - Test: 50V
  • Current Rating: 100µA
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 30W
  • Voltage - Rated: 170V
  • Package / Case: M113
  • Supplier Device Package: M113
封裝: M113
庫存6,992
175MHz
16dB
50V
100µA
-
100mA
30W
170V
M113
M113
BLP10H690PGY
Ampleon USA Inc.

BLP10H690PG/SOT1224/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,720
-
-
-
-
-
-
-
-
-
-
AFT26H050W26SR3
NXP

FET RF 2CH 65V 2.69GHZ NI780-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 14.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4L4L-8
  • Supplier Device Package: NI-780S-4L4L-8
封裝: NI-780S-4L4L-8
庫存3,296
2.69GHz
14.2dB
28V
-
-
100mA
9W
65V
NI-780S-4L4L-8
NI-780S-4L4L-8
BLP10H630PY
Ampleon USA Inc.

BLP10H630P/SOT1223/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,808
-
-
-
-
-
-
-
-
-
-
MMRF1015GNR1
NXP

FET RF 68V 960MHZ

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-2 Gull Wing
  • Supplier Device Package: TO-270-2 GULL
封裝: TO-270-2 Gull Wing
庫存5,424
960MHz
18dB
28V
-
-
125mA
10W
68V
TO-270-2 Gull Wing
TO-270-2 GULL
hot PD84010-E
STMicroelectronics

FET RF 40V 870MHZ

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16.3dB
  • Voltage - Test: 7.5V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 2W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封裝: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
庫存6,576
870MHz
16.3dB
7.5V
8A
-
300mA
2W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
BLP05H6350XRY
Ampleon USA Inc.

RF FET LDMOS 135V 27DB SOT12232

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 350W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1223-2
  • Supplier Device Package: 4-HSOPF
封裝: SOT-1223-2
庫存5,840
108MHz
27dB
50V
-
-
100mA
350W
135V
SOT-1223-2
4-HSOPF
BLF6G20LS-75,112
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 29.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封裝: SOT-502B
庫存6,128
1.93GHz ~ 1.99GHz
19dB
28V
18A
-
550mA
29.5W
65V
SOT-502B
SOT502B
PD20015-E
STMicroelectronics

TRANS RF PWR N-CH POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 11dB
  • Voltage - Test: 13.6V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封裝: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
庫存9,180
2GHz
11dB
13.6V
7A
-
350mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
CGH40180PP
Cree/Wolfspeed

FET RF 84V 2.5GHZ 440199

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 2.5GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 56A
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 220W
  • Voltage - Rated: 84V
  • Package / Case: 440199
  • Supplier Device Package: 440199
封裝: 440199
庫存6,204
0Hz ~ 2.5GHz
19dB
28V
56A
-
2A
220W
84V
440199
440199
hot MRF6V12250HR5
NXP

FET RF 100V 1.03GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 20.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 275W
  • Voltage - Rated: 100V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封裝: NI-780
庫存6,368
1.03GHz
20.3dB
50V
-
-
100mA
275W
100V
NI-780
NI-780
BLF571,112
Ampleon USA Inc.

RF FET LDMOS 110V 27.5DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 225MHz
  • Gain: 27.5dB
  • Voltage - Test: 50V
  • Current Rating: 3.6A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 20W
  • Voltage - Rated: 110V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
封裝: SOT467C
庫存6,736
225MHz
27.5dB
50V
3.6A
-
50mA
20W
110V
SOT467C
SOT467C
PTFB090901EA-V2-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLP0408H9S30Z
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT1482-1

  • Transistor Type: LDMOS
  • Frequency: 400MHz ~ 860MHz
  • Gain: 20.2dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 30W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-1482-1
  • Supplier Device Package: SOT-1482-1
封裝: -
Request a Quote
400MHz ~ 860MHz
20.2dB
50 V
1.4µA
-
100 mA
30W
108 V
SOT-1482-1
SOT-1482-1
BB305CEW-TL-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
WP28020015
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 28V DIE

  • Transistor Type: GaN HEMT
  • Frequency: 15GHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 880mA
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 15W
  • Voltage - Rated: 28 V
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
庫存90
15GHz
10dB
28 V
880mA
-
300 mA
15W
28 V
Die
Die
PTFB182503EL-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-33288-6

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 19dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.85 A
  • Power - Output: 50W
  • Voltage - Rated: 65 V
  • Package / Case: H-33288-6
  • Supplier Device Package: H-33288-6
封裝: -
Request a Quote
1.88GHz
19dB
30 V
-
-
1.85 A
50W
65 V
H-33288-6
H-33288-6