頁 26 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - RF

記錄 3,855
頁  26/138
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零件編號
製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BF 5020 E6327
Infineon Technologies

MOSFET N-CH 8V 25MA SOT143-4

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 26dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
封裝: TO-253-4, TO-253AA
庫存7,040
800MHz
26dB
5V
25mA
1.2dB
10mA
-
8V
TO-253-4, TO-253AA
PG-SOT143-4
PTF080101M V1
Infineon Technologies

IC FET RF LDMOS 10W TSSOP-10

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-RFP-10
封裝: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
庫存2,592
960MHz
16dB
28V
1µA
-
180mA
10W
65V
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
PG-RFP-10
MAGX-000035-01000P
M/A-Com Technology Solutions

TRANSISTOR RF 10W GAN

  • Transistor Type: HEMT
  • Frequency: 3.5GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 500mA
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,168
3.5GHz
17dB
50V
500mA
-
30mA
10W
65V
-
-
NE3520S03-A
CEL

FET RF 4V 20GHZ S03

  • Transistor Type: HFET
  • Frequency: 20GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.65dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S03
封裝: 4-SMD, Flat Leads
庫存3,584
20GHz
13.5dB
2V
70mA
0.65dB
10mA
-
4V
4-SMD, Flat Leads
S03
ON5451,518
NXP

MOSFET RF 20SOIC

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,440
-
-
-
-
-
-
-
-
-
-
MRF7S38075HSR5
NXP

FET RF 65V 3.6GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存4,352
3.4GHz ~ 3.6GHz
14dB
30V
-
-
900mA
12W
65V
NI-780S
NI-780S
PD57030
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
封裝: PowerSO-10 Exposed Bottom Pad
庫存7,632
945MHz
14dB
28V
4A
-
50mA
30W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
MRF6S21100MBR1
NXP

FET RF 68V 2.16GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.16GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272 WB-4
封裝: TO-272-4
庫存4,720
2.11GHz ~ 2.16GHz
14.5dB
28V
-
-
1.05A
23W
68V
TO-272-4
TO-272 WB-4
hot SHF-0289
RFMD

FET RF 9V 1.96GHZ SOT-89

  • Transistor Type: HFET
  • Frequency: 1.96GHz
  • Gain: 20dB
  • Voltage - Test: 7V
  • Current Rating: 400mA
  • Noise Figure: 4dB
  • Current - Test: 200mA
  • Power - Output: 30.2dBm
  • Voltage - Rated: 9V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存93,132
1.96GHz
20dB
7V
400mA
4dB
200mA
30.2dBm
9V
TO-243AA
SOT-89
BLA0912-250R,112
Ampleon USA Inc.

RF FET LDMOS 75V 13DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.22GHz
  • Gain: 13dB
  • Voltage - Test: 36V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 250W
  • Voltage - Rated: 75V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
封裝: SOT-502A
庫存3,760
960MHz ~ 1.22GHz
13dB
36V
-
-
-
250W
75V
SOT-502A
LDMOST
BLS7G2730L-200PU
Ampleon USA Inc.

RF FET LDMOS 65V 12DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.7GHz ~ 3GHz
  • Gain: 12dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封裝: SOT539A
庫存7,984
2.7GHz ~ 3GHz
12dB
32V
-
-
100mA
200W
65V
SOT539A
SOT539A
MRF6VP11KGSR5
NXP

FET RF 2CH 110V 130MHZ NI-1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 130MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230S-4 GW
  • Supplier Device Package: NI-1230S-4 GullWing
封裝: NI-1230S-4 GW
庫存5,696
130MHz
26dB
50V
-
-
150mA
1000W
110V
NI-1230S-4 GW
NI-1230S-4 GullWing
A2T20H330W24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 58W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
封裝: NI-1230-4LS2L
庫存3,440
1.88GHz
16.5dB
28V
-
-
700mA
58W
65V
NI-1230-4LS2L
NI-1230-4LS2L
NPT2019
M/A-Com Technology Solutions

FET RF 160V 6GHZ 14DFN

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 16dB
  • Voltage - Test: 48V
  • Current Rating: 3.5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 25W
  • Voltage - Rated: 160V
  • Package / Case: 14-TDFN Exposed Pad
  • Supplier Device Package: 14-DFN (3x6)
封裝: 14-TDFN Exposed Pad
庫存6,016
0Hz ~ 6GHz
16dB
48V
3.5A
-
150mA
25W
160V
14-TDFN Exposed Pad
14-DFN (3x6)
CLF1G0035S-100,112
Ampleon USA Inc.

RF FET HEMT 150V 12DB SOT467B

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 12dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 330mA
  • Power - Output: 100W
  • Voltage - Rated: 150V
  • Package / Case: SOT467B
  • Supplier Device Package: SOT467B
封裝: SOT467B
庫存4,656
3GHz
12dB
50V
-
-
330mA
100W
150V
SOT467B
SOT467B
BLF7G24LS-140,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封裝: SOT-502B
庫存6,544
2.3GHz ~ 2.4GHz
18.5dB
28V
28A
-
1.3A
30W
65V
SOT-502B
SOT502B
BLF184XRGJ
Ampleon USA Inc.

RF FET LDMOS 135V 23DB SOT1214C

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 700W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1214C
  • Supplier Device Package: SOT1214C
封裝: SOT-1214C
庫存6,560
108MHz
23.9dB
50V
-
-
100mA
700W
135V
SOT-1214C
SOT1214C
BLF178P,112
Ampleon USA Inc.

RF FET LDMOS 110V 28.5DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 28.5dB
  • Voltage - Test: 50V
  • Current Rating: 88A
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 1200W
  • Voltage - Rated: 110V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封裝: SOT539A
庫存6,288
108MHz
28.5dB
50V
88A
-
40mA
1200W
110V
SOT539A
SOT539A
CGH27030F
Cree/Wolfspeed

RF MOSFET HEMT 28V 440166

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
封裝: 440166
庫存6,792
3GHz
14.5dB
28V
-
-
150mA
30W
84V
440166
440166
BLP9H10-30GZ
Ampleon USA Inc.

RF MOSFET SOT1483-1

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT-1483-1
  • Supplier Device Package: SOT1483-1
封裝: -
庫存207
-
-
-
-
-
-
-
-
SOT-1483-1
SOT1483-1
PTFC210202FCV1XWSA1
Infineon Technologies

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封裝: -
Request a Quote
2.2GHz
21dB
28 V
-
-
170 mA
5W
65 V
H-37248-4
H-37248-4
ART2K0TFESJ
Ampleon USA Inc.

RF MOSFET 1230/TRAY

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1MHz ~ 400MHz
  • Gain: 29dB
  • Voltage - Test: 65 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 2000W
  • Voltage - Rated: 200 V
  • Package / Case: ACC-1230-6F-2
  • Supplier Device Package: ACC-1230-6F-2
封裝: -
庫存255
1MHz ~ 400MHz
29dB
65 V
2.8µA
-
100 mA
2000W
200 V
ACC-1230-6F-2
ACC-1230-6F-2
GTVA220701FA-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37265J-2

  • Transistor Type: HEMT
  • Frequency: 1.805GHz ~ 2.17GHz
  • Gain: 22dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 70W
  • Voltage - Rated: 125 V
  • Package / Case: H-37265J-2
  • Supplier Device Package: H-37265J-2
封裝: -
Request a Quote
1.805GHz ~ 2.17GHz
22dB
48 V
-
-
200 mA
70W
125 V
H-37265J-2
H-37265J-2
BCP020C
BeRex Inc

RF MOSFET PHEMT FET 8V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 6GHz ~ 18GHz
  • Gain: 14dB
  • Voltage - Test: 8 V
  • Current Rating: 80mA
  • Noise Figure: 1.05dB
  • Current - Test: 30 mA
  • Power - Output: 22dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
6GHz ~ 18GHz
14dB
8 V
80mA
1.05dB
30 mA
22dBm
12 V
Die
Die
MRF5S19100HR
Freescale Semiconductor

RF MOSFET 65V NI780

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
1214GN-180LV
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 180W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
封裝: -
庫存30
1.2GHz ~ 1.4GHz
17dB
50 V
-
-
60 mA
180W
150 V
55-KR
55-KR
PTFB241402F-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 17dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 110W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封裝: -
Request a Quote
2.4GHz
17dB
30 V
-
-
120 mA
110W
65 V
H-37248-4
H-37248-4
BLC9H10XS-600AY
Ampleon USA Inc.

RF MOSFET LDMOS 50V DFM4

  • Transistor Type: LDMOS
  • Frequency: 616MHz ~ 960MHz
  • Gain: 17.7dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 600W
  • Voltage - Rated: 105 V
  • Package / Case: SOT-1250-2
  • Supplier Device Package: DFM4
封裝: -
Request a Quote
616MHz ~ 960MHz
17.7dB
50 V
1.4µA
-
1.4 A
600W
105 V
SOT-1250-2
DFM4