頁 132 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - RF

記錄 3,855
頁  132/138
圖片
零件編號
製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PXAC243502FVV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 68W
  • Voltage - Rated: 65V
  • Package / Case: H-37275-4
  • Supplier Device Package: H-37275-4
封裝: H-37275-4
庫存6,976
2.4GHz
15dB
28V
-
-
850mA
68W
65V
H-37275-4
H-37275-4
PTFA210601F V4 R250
Infineon Technologies

IC FET RF LDMOS 60W H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
封裝: 2-Flatpack, Fin Leads, Flanged
庫存5,376
2.14GHz
16dB
28V
10µA
-
550mA
12W
65V
2-Flatpack, Fin Leads, Flanged
H-37265-2
MRFG35002N6AT1
NXP

FET RF 8V 3.55GHZ PLD-1.5

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 6V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 65mA
  • Power - Output: 158mW
  • Voltage - Rated: 8V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
封裝: PLD-1.5
庫存2,112
3.55GHz
10dB
6V
-
-
65mA
158mW
8V
PLD-1.5
PLD-1.5
MRF6S9125NBR1
NXP

FET RF 68V 880MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 68V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
封裝: TO-272BB
庫存3,200
880MHz
20.2dB
28V
-
-
950mA
27W
68V
TO-272BB
TO-272 WB-4
SD2900
STMicroelectronics

TRANS RF N-CH HF/VHF/UHF M113

  • Transistor Type: N-Channel
  • Frequency: 400MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 900mA
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 5W
  • Voltage - Rated: 65V
  • Package / Case: M113
  • Supplier Device Package: M113
封裝: M113
庫存7,248
400MHz
16dB
28V
900mA
-
50mA
5W
65V
M113
M113
BF1212WR,115
NXP

MOSFET N-CH DUAL GATE 6V SOT343R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 30dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 12mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
封裝: SC-82A, SOT-343
庫存6,560
400MHz
30dB
5V
30mA
0.9dB
12mA
-
6V
SC-82A, SOT-343
CMPAK-4
BF909A,215
NXP

MOSFET N-CH SOT-143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 40mA
  • Noise Figure: 2dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存2,864
800MHz
-
-
40mA
2dB
-
-
7V
TO-253-4, TO-253AA
SOT-143B
PTFA212001EV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 30V H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36260-2
封裝: 2-Flatpack, Fin Leads, Flanged
庫存7,232
2.11GHz ~ 2.17GHz
15.8dB
30V
10µA
-
1.6A
200W
65V
2-Flatpack, Fin Leads, Flanged
H-36260-2
BF5030WH6327XTSA1
Infineon Technologies

FET RF 8V 800MHZ SOT343

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 3V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封裝: SC-82A, SOT-343
庫存6,464
800MHz
24dB
3V
25mA
1.3dB
10mA
-
8V
SC-82A, SOT-343
SOT-343
3135GN-170M
Microsemi Corporation

FETS RF GAN 150V 3.1-3.5GHZ 55QP

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 11.5dB ~ 11.8dB
  • Voltage - Test: 60V
  • Current Rating: 5mA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 185W
  • Voltage - Rated: 150V
  • Package / Case: 55QP
  • Supplier Device Package: 55QP
封裝: 55QP
庫存6,640
3.1GHz ~ 3.5GHz
11.5dB ~ 11.8dB
60V
5mA
-
500mA
185W
150V
55QP
55QP
BLA9G1011LS-300GU
Ampleon USA Inc.

BLA9G1011LS-300G/SOT502/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,224
-
-
-
-
-
-
-
-
-
-
BLF8G22LS-200GV,12
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
封裝: SOT-1244C
庫存4,880
2.11GHz ~ 2.17GHz
19dB
28V
-
-
2A
55W
65V
SOT-1244C
CDFM6
AFT18S230SR3
NXP

FET RF 65V 1.88GHZ NI780S-6

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存7,088
1.88GHz
19dB
28V
-
-
1.8A
50W
65V
NI-780S
NI-780S
PD57018TR-E
STMicroelectronics

TRANSISTOR RF POWERSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封裝: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
庫存6,192
945MHz
16.5dB
28V
2.5A
-
100mA
18W
65V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
LET9150
STMicroelectronics

MOSFET N-CH 80V 20A M-246

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 20dB
  • Voltage - Test: 32V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 150W
  • Voltage - Rated: 80V
  • Package / Case: M246
  • Supplier Device Package: M246
封裝: M246
庫存5,328
860MHz
20dB
32V
20A
-
600mA
150W
80V
M246
M246
PD85025STR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17.3dB
  • Voltage - Test: 13.6V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 10W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
封裝: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
庫存2,352
870MHz
17.3dB
13.6V
7A
-
300mA
10W
40V
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
PowerSO-10RF (Straight Lead)
hot MRF176GV
M/A-Com Technology Solutions

FET RF 2CH 125V 225MHZ 375-04

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 225MHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 16A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 125V
  • Package / Case: 375-04
  • Supplier Device Package: 375-04, Style 2
封裝: 375-04
庫存5,296
225MHz
17dB
50V
16A
-
100mA
200W
125V
375-04
375-04, Style 2
BLF6G38LS-100,112
Ampleon USA Inc.

RF FET LDMOS 65V 13DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: 34A
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 18.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封裝: SOT-502B
庫存4,384
3.4GHz ~ 3.6GHz
13dB
28V
34A
-
1.05A
18.5W
65V
SOT-502B
SOT502B
BLF8G27LS-100V,118
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
封裝: SOT-1244B
庫存7,488
2.5GHz ~ 2.7GHz
17dB
28V
-
-
900mA
25W
65V
SOT-1244B
CDFM6
3SK324UG-TL-E
Renesas Electronics Corporation

RF MOSFET 3.5V CMPAK-4

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: 24dB
  • Voltage - Test: 3.5 V
  • Current Rating: -
  • Noise Figure: 1dB
  • Current - Test: 10 mA
  • Power - Output: -
  • Voltage - Rated: 6 V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
封裝: -
Request a Quote
-
24dB
3.5 V
-
1dB
10 mA
-
6 V
SC-82A, SOT-343
CMPAK-4
PTRA093302FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 48V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 768MHz
  • Gain: 17.25dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 79W
  • Voltage - Rated: 105 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封裝: -
Request a Quote
768MHz
17.25dB
48 V
10µA
-
400 mA
79W
105 V
H-37248-4
H-37248-4
RF2L27025CG2
STMicroelectronics

RF MOSFET LDMOS E2

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 2.7GHz
  • Gain: 18dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 25W
  • Voltage - Rated: 65 V
  • Package / Case: E2
  • Supplier Device Package: E2
封裝: -
Request a Quote
700MHz ~ 2.7GHz
18dB
-
1µA
-
-
25W
65 V
E2
E2
PTAC260302FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248H-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 85 mA
  • Power - Output: 5.6W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248H-4
  • Supplier Device Package: H-37248H-4
封裝: -
Request a Quote
2.69GHz
15.5dB
28 V
10µA
-
85 mA
5.6W
65 V
H-37248H-4
H-37248H-4
A3I25D080GNR1
NXP

RF MOSFET LDMOS 28V TO270-17

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.69GHz
  • Gain: 29.2dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 175 mA
  • Power - Output: 8.3W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270-17 Variant, Gull Wing
  • Supplier Device Package: TO-270WBG-17
封裝: -
Request a Quote
2.3GHz ~ 2.69GHz
29.2dB
28 V
10µA
-
175 mA
8.3W
65 V
TO-270-17 Variant, Gull Wing
TO-270WBG-17
B11G1822N60DYZ
Ampleon USA Inc.

RF MOSFET LDMOS 36QFN

  • Transistor Type: LDMOS
  • Frequency: 1.8GHz ~ 2.2GHz
  • Gain: 32dB
  • Voltage - Test: -
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
封裝: -
庫存855
1.8GHz ~ 2.2GHz
32dB
-
1.4µA
-
-
-
65 V
36-QFN Exposed Pad
36-PQFN (12x7)
B11G3338N81DX
Ampleon USA Inc.

RF MOSFET LDMOS 36QFN

  • Transistor Type: LDMOS
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 34dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 28 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
封裝: -
Request a Quote
3.3GHz ~ 3.8GHz
34dB
-
-
-
-
-
28 V
36-QFN Exposed Pad
36-PQFN (12x7)
BLP15M9S100GZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1483-1

  • Transistor Type: LDMOS
  • Frequency: 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 100W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1483-1
  • Supplier Device Package: SOT1483-1
封裝: -
庫存1,074
1.4GHz
18dB
32 V
1.4µA
-
900 mA
100W
65 V
SOT-1483-1
SOT1483-1
GTVA262711FA-V2-R2
MACOM Technology Solutions

RF MOSFET HEMT 48V H-87265J-2

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 320 mA
  • Power - Output: 70W
  • Voltage - Rated: 125 V
  • Package / Case: H-87265J-2
  • Supplier Device Package: H-87265J-2
封裝: -
Request a Quote
2.62GHz ~ 2.69GHz
18dB
48 V
-
-
320 mA
70W
125 V
H-87265J-2
H-87265J-2