頁 127 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com 86-755-83210559 x831
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

電晶體 - FET、MOSFET - RF

記錄 3,855
頁  127/138
圖片
零件編號
製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA192401FV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 240W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 16dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
封裝: 2-Flatpack, Fin Leads, Flanged
庫存3,040
1.96GHz
16dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
PTFA091201GL V1
Infineon Technologies

IC FET RF LDMOS 120W PG-63248-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: PG-63248-2
封裝: 2-Flatpack, Fin Leads
庫存3,088
960MHz
18.5dB
28V
10µA
-
750mA
110W
65V
2-Flatpack, Fin Leads
PG-63248-2
PTFA041501HL V1 R250
Infineon Technologies

IC FET RF LDMOS 150W PG-64248-2

  • Transistor Type: LDMOS
  • Frequency: 470MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: PG-64248-2
封裝: 2-Flatpack, Fin Leads, Flanged
庫存3,088
470MHz
21dB
28V
1µA
-
900mA
150W
65V
2-Flatpack, Fin Leads, Flanged
PG-64248-2
MAGX-000912-500L0S
M/A-Com Technology Solutions

TRANSISTOR GAN 960-1215MHZ 500W

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.22GHz
  • Gain: 19.8dB
  • Voltage - Test: 50V
  • Current Rating: 27.3A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 500W
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,888
960MHz ~ 1.22GHz
19.8dB
50V
27.3A
-
400mA
500W
-
-
-
BLF8G22L-160BV,118
NXP

TRANSISTOR CDFM6

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT-1120B
  • Supplier Device Package: CDFM6
封裝: SOT-1120B
庫存5,632
-
-
-
-
-
-
-
-
SOT-1120B
CDFM6
MRF8S9100HR5
NXP

FET RF 70V 920MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 920MHz
  • Gain: 19.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 72W
  • Voltage - Rated: 70V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封裝: NI-780
庫存4,928
920MHz
19.3dB
28V
-
-
500mA
72W
70V
NI-780
NI-780
hot MRF7S21110HSR3
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存9,420
2.17GHz
17.3dB
28V
-
-
1.1A
33W
65V
NI-780S
NI-780S
MRF6S21100MR1
NXP

FET RF 68V 2.16GHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.16GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
封裝: TO-270-4
庫存3,264
2.11GHz ~ 2.16GHz
14.5dB
28V
-
-
1.05A
23W
68V
TO-270-4
TO-270 WB-4
MRF6S21050LR5
NXP

FET RF 68V 2.16GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 11.5W
  • Voltage - Rated: 68V
  • Package / Case: NI-400
  • Supplier Device Package: NI-400
封裝: NI-400
庫存6,400
2.16GHz
16dB
28V
-
-
450mA
11.5W
68V
NI-400
NI-400
MRF6S19100HSR3
NXP

FET RF 68V 1.99GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 16.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存3,648
1.99GHz
16.1dB
28V
-
-
900mA
22W
68V
NI-780S
NI-780S
BF1102,115
NXP

FET RF 7V 800MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 2dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
封裝: 6-TSSOP, SC-88, SOT-363
庫存3,520
800MHz
-
5V
40mA
2dB
15mA
-
7V
6-TSSOP, SC-88, SOT-363
6-TSSOP
PTAC210802FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,888
-
-
-
-
-
-
-
-
-
-
PTFA080551EV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 28V H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 869MHz ~ 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36265-2
封裝: 2-Flatpack, Fin Leads, Flanged
庫存4,064
869MHz ~ 960MHz
18.5dB
28V
10µA
-
450mA
55W
65V
2-Flatpack, Fin Leads, Flanged
H-36265-2
AFV141KHSR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.4GHz
  • Gain: 17.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 105V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
封裝: NI-1230-4S
庫存4,288
1.4GHz
17.7dB
50V
-
-
100mA
1000W
105V
NI-1230-4S
NI-1230-4S
hot MRF8S9260HSR3
NXP

FET RF 70V 960MHZ NI-880HS

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.7A
  • Power - Output: 75W
  • Voltage - Rated: 70V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
封裝: NI-880S
庫存35,520
960MHz
18.6dB
28V
-
-
1.7A
75W
70V
NI-880S
NI-880S
BLA6H0912LS-1000U
Ampleon USA Inc.

RF FET LDMOS 100V 15.5DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.03GHz
  • Gain: 15.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 1000W
  • Voltage - Rated: 100V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封裝: SOT539B
庫存5,408
1.03GHz
15.5dB
50V
-
-
200mA
1000W
100V
SOT539B
SOT539B
MMRF1316NR1
NXP

FET RF 2CH 133V 230MHZ TO270

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 133V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
封裝: TO-270-4
庫存3,568
230MHz
27dB
50V
-
-
100mA
300W
133V
TO-270-4
TO-270 WB-4
BLF888DSU
Ampleon USA Inc.

RF FET LDMOS 104V 21DB SOT539B

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 104V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封裝: SOT539B
庫存5,472
860MHz
21dB
50V
-
-
1.3A
250W
104V
SOT539B
SOT539B
BF 2040 E6814
Infineon Technologies

MOSFET N-CH 8V 40MA SOT-143

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.6dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
封裝: TO-253-4, TO-253AA
庫存152,862
800MHz
23dB
5V
40mA
1.6dB
15mA
-
8V
TO-253-4, TO-253AA
PG-SOT143-4
DC35GN-15-Q4
Microchip Technology

RF MOSFET HEMT 50V 24QFN

  • Transistor Type: HEMT
  • Frequency: -
  • Gain: 18.6dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 19W
  • Voltage - Rated: 125 V
  • Package / Case: 24-TFQFN Exposed Pad
  • Supplier Device Package: 24-QFN (4x4)
封裝: -
Request a Quote
-
18.6dB
50 V
-
-
40 mA
19W
125 V
24-TFQFN Exposed Pad
24-QFN (4x4)
BLC10G19LS-250WT
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1271-2

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 19.3dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 250W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1271-2
  • Supplier Device Package: SOT1271-2
封裝: -
Request a Quote
1.93GHz ~ 1.99GHz
19.3dB
28 V
1.4µA
-
1.4 A
250W
65 V
SOT-1271-2
SOT1271-2
RFM04U6P-TE12L-F
Toshiba Semiconductor and Storage

RF MOSFET 6V PW-MINI

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 470MHz
  • Gain: 13.3dB
  • Voltage - Test: 6 V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 4.3W
  • Voltage - Rated: 16 V
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
封裝: -
Request a Quote
470MHz
13.3dB
6 V
2A
-
500 mA
4.3W
16 V
TO-243AA
PW-MINI
ST24180
STMicroelectronics

RF MOSFET LDMOS B2

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.5GHz
  • Gain: 15.3dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 180W
  • Voltage - Rated: 65 V
  • Package / Case: B2
  • Supplier Device Package: B2
封裝: -
Request a Quote
2.3GHz ~ 2.5GHz
15.3dB
-
1µA
-
-
180W
65 V
B2
B2
A3G26D055N-1805
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 100MHz ~ 2.69GHz
  • Gain: 13.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 8W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
封裝: -
庫存9
100MHz ~ 2.69GHz
13.9dB
48 V
-
-
40 mA
8W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
0912GN-650V
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 18dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 650W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
封裝: -
Request a Quote
960MHz ~ 1.215GHz
18dB
50 V
-
-
100 mA
650W
150 V
55-KR
55-KR
BLC10G22XS-301AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V DFM6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.1 A
  • Power - Output: 300W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
封裝: -
Request a Quote
2.11GHz ~ 2.17GHz
15dB
30 V
1.4µA
-
1.1 A
300W
65 V
SOT-1275-1
DFM6
MHT1803A
NXP

RF MOSFET TO247

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFB201402FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.02GHz
  • Gain: 16dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封裝: -
Request a Quote
2.02GHz
16dB
28 V
-
-
500 mA
20W
65 V
H-37248-4
H-37248-4