頁 118 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - RF

記錄 3,855
頁  118/138
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零件編號
製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA212401F V4 R250
Infineon Technologies

IC FET RF LDMOS 240W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
封裝: 2-Flatpack, Fin Leads, Flanged
庫存6,080
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
hot BF2030E6814HTSA1
Infineon Technologies

MOSFET N-CH 8V 40MA SOT-143

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.5dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
封裝: TO-253-4, TO-253AA
庫存35,868
800MHz
23dB
5V
40mA
1.5dB
10mA
-
8V
TO-253-4, TO-253AA
PG-SOT143-4
BLF6G20S-45,118
Ampleon USA Inc.

RF FET LDMOS 65V 19.2DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 1.8GHz ~ 1.88GHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: CDFM2
封裝: SOT-608B
庫存4,064
1.8GHz ~ 1.88GHz
19.2dB
28V
13A
-
360mA
2.5W
65V
SOT-608B
CDFM2
ON5275,135
NXP

MOSFET RF SOT223 SC-73

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封裝: TO-261-4, TO-261AA
庫存2,992
-
-
-
-
-
-
-
-
TO-261-4, TO-261AA
SOT-223
MRF18085ALSR5
NXP

FET RF 65V 1.88GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 15dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 85W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存3,264
1.81GHz ~ 1.88GHz
15dB
26V
-
-
800mA
85W
65V
NI-780S
NI-780S
MRFG35002N6T1
NXP

FET RF 8V 3.55GHZ PLD-1.5

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 6V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 65mA
  • Power - Output: 1.5W
  • Voltage - Rated: 8V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
封裝: PLD-1.5
庫存6,016
3.55GHz
10dB
6V
-
-
65mA
1.5W
8V
PLD-1.5
PLD-1.5
MRF377HR3
NXP

FET RF 65V 860MHZ NI-860C

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 18.2dB
  • Voltage - Test: 32V
  • Current Rating: 17A
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
封裝: NI-860C3
庫存3,968
860MHz
18.2dB
32V
17A
-
2A
45W
65V
NI-860C3
NI-860C3
J211
Fairchild/ON Semiconductor

JFET N-CH 25V 20MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 20mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存3,664
-
-
-
20mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BF909WR,115
NXP

MOSFET N-CH 7V 40MA SOT343

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 2dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
封裝: SC-82A, SOT-343
庫存4,768
800MHz
-
5V
40mA
2dB
15mA
-
7V
SC-82A, SOT-343
CMPAK-4
PTFB072707FHV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,344
-
-
-
-
-
-
-
-
-
-
MMRF1013HR5
NXP

FET RF 2CH 65V 2.9GHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
封裝: SOT-979A
庫存3,488
2.9GHz
13.3dB
30V
-
-
100mA
320W
65V
SOT-979A
NI-1230-4H
AFT21H350W04GSR6
NXP

FET RF 2CH 65V 2.11GHZ

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 16.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S-4 GW
  • Supplier Device Package: NI-1230S-4 GullWing
封裝: NI-1230S-4 GW
庫存2,816
2.11GHz
16.4dB
28V
-
-
750mA
63W
65V
NI-1230S-4 GW
NI-1230S-4 GullWing
AFT18H356-24SR6
NXP

FET RF 2CH 65V 1.88GHZ NI1230-4

  • Transistor Type: -
  • Frequency: 1.88GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
封裝: NI-1230-4LS2L
庫存4,640
1.88GHz
15dB
28V
-
-
1.1A
63W
65V
NI-1230-4LS2L
NI-1230-4LS2L
MRFE6VP6300HR3
NXP

FET RF 2CH 130V 230MHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 26.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 130V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
封裝: NI-780-4
庫存6,192
230MHz
26.5dB
50V
-
-
100mA
300W
130V
NI-780-4
NI-780-4
hot MRF8S18120HSR3
NXP

FET RF 65V 1.81GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz
  • Gain: 18.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 72W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封裝: NI-780S
庫存6,576
1.81GHz
18.2dB
28V
-
-
800mA
72W
65V
NI-780S
NI-780S
BLM9D2325-20ABZ
Ampleon USA Inc.

BLM9D2325-20AB/SOT1462/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,152
-
-
-
-
-
-
-
-
-
-
PD57018S-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
封裝: PowerSO-10 Exposed Bottom Pad
庫存3,632
945MHz
16.5dB
28V
2.5A
-
100mA
18W
65V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
BLS6G2735LS-30,112
Ampleon USA Inc.

RF FET LDMOS 60V 13DB SOT1135B

  • Transistor Type: LDMOS
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 13dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 30W
  • Voltage - Rated: 60V
  • Package / Case: SOT-1135B
  • Supplier Device Package: CDFM2
封裝: SOT-1135B
庫存6,752
3.1GHz ~ 3.5GHz
13dB
32V
-
-
50mA
30W
60V
SOT-1135B
CDFM2
2SK3718-T1-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A3T23H300W23SR6
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
CGH35030F
MACOM Technology Solutions

RF MOSFET HEMT 28V 440166

  • Transistor Type: HEMT
  • Frequency: 3.3GHz ~ 3.9GHz
  • Gain: 11.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 30W
  • Voltage - Rated: 84 V
  • Package / Case: 440166
  • Supplier Device Package: 440166
封裝: -
庫存45
3.3GHz ~ 3.9GHz
11.5dB
28 V
-
-
120 mA
30W
84 V
440166
440166
CLS3H2731LS-700U
Ampleon USA Inc.

RF MOSFET SOT502

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
VRF152GMP
Microchip Technology

RF MOSFET VDMOS 140V

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存30
-
-
-
-
-
-
-
-
-
-
PTFA092201E-V4-R250
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.85 A
  • Power - Output: 220W
  • Voltage - Rated: 65 V
  • Package / Case: H-36260-2
  • Supplier Device Package: H-36260-2
封裝: -
Request a Quote
960MHz
18.5dB
30 V
10µA
-
1.85 A
220W
65 V
H-36260-2
H-36260-2
CGHV60075D5
MACOM Technology Solutions

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125 mA
  • Power - Output: 75W
  • Voltage - Rated: 150 V
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
6GHz
17dB
50 V
-
-
125 mA
75W
150 V
Die
Die
1214GN-400LV
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 16.8dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 400W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
封裝: -
Request a Quote
1.2GHz ~ 1.4GHz
16.8dB
50 V
-
-
200 mA
400W
150 V
55-KR
55-KR
BLC10G15XS-301AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V DFM6

  • Transistor Type: LDMOS
  • Frequency: 1.452GHz ~ 1.492GHz
  • Gain: 18dB
  • Voltage - Test: 30 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 305W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
封裝: -
庫存33
1.452GHz ~ 1.492GHz
18dB
30 V
1.4µA
-
300 mA
305W
65 V
SOT-1275-1
DFM6
RF5L0912750CB4
STMicroelectronics

RF MOSFET LDMOS 50V D4E

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 15dB
  • Voltage - Test: 50 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 750W
  • Voltage - Rated: 110 V
  • Package / Case: D4E
  • Supplier Device Package: D4E
封裝: -
Request a Quote
960MHz ~ 1.215GHz
15dB
50 V
1µA
-
150 mA
750W
110 V
D4E
D4E