頁 114 - 電晶體 - FET、MOSFET - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - RF

記錄 3,855
頁  114/138
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製造商
描述
封裝
庫存
數量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA120501EAV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,464
-
-
-
-
-
-
-
-
-
-
PTFA091201FV4XWSA1
Infineon Technologies

IC FET RF LDMOS 120W H-37248-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
封裝: 2-Flatpack, Fin Leads, Flanged
庫存4,864
960MHz
19dB
28V
10µA
-
750mA
110W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
MAGX-000912-650L0S
M/A-Com Technology Solutions

TRANSISTOR RF 650W GAN

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 20.5dB
  • Voltage - Test: 50V
  • Current Rating: 33A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 650W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,248
960MHz ~ 1.215GHz
20.5dB
50V
33A
-
500mA
650W
65V
-
-
MAGX-000035-01000S
M/A-Com Technology Solutions

TRANSISTOR GAN 10WCW 0.03-3.5GHZ

  • Transistor Type: HEMT
  • Frequency: 30MHz ~ 3.5GHz
  • Gain: 17.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 490mA
  • Power - Output: 40dBm
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,984
30MHz ~ 3.5GHz
17.5dB
50V
-
-
490mA
40dBm
65V
-
-
ON5200,118
NXP

MOSFET RF SOT426 D2PAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: SOT-426
封裝: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
庫存2,912
-
-
-
-
-
-
-
-
TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
SOT-426
MRF6S19120HR3
NXP

FET RF 68V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 19W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封裝: NI-780
庫存2,128
1.99GHz
15dB
28V
-
-
1A
19W
68V
NI-780
NI-780
MRF6P9220HR5
NXP

FET RF 68V 880MHZ NI-860C3

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 47W
  • Voltage - Rated: 68V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
封裝: NI-860C3
庫存2,544
880MHz
20dB
28V
-
-
1.6A
47W
68V
NI-860C3
NI-860C3
hot MRF5S19130HSR3
NXP

FET RF 65V 1.99GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 26W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
封裝: NI-880S
庫存24,672
1.99GHz
13dB
28V
-
-
1.2A
26W
65V
NI-880S
NI-880S
MRF5P21240HR5
NXP

FET RF 65V 2.17GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.2A
  • Power - Output: 52W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
封裝: NI-1230
庫存3,376
2.11GHz ~ 2.17GHz
13dB
28V
-
-
2.2A
52W
65V
NI-1230
NI-1230
MRF373ALR1
NXP

FET RF 70V 860MHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 18.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 75W
  • Voltage - Rated: 70V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
封裝: NI-360
庫存3,888
860MHz
18.2dB
32V
-
-
200mA
75W
70V
NI-360
NI-360
MRF7S18170HR3
NXP

FET RF 65V 1.81GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
封裝: NI-880
庫存6,528
1.81GHz
17.5dB
28V
-
-
1.4A
50W
65V
NI-880
NI-880
2N5485_D27Z
Fairchild/ON Semiconductor

JFET N-CH 25V 10MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 10mA
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
庫存3,792
400MHz
-
15V
10mA
4dB
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NE3508M04-A
CEL

FET RF 4V 2GHZ 4-TSMM

  • Transistor Type: HFET
  • Frequency: 2GHz
  • Gain: 14dB
  • Voltage - Test: 2V
  • Current Rating: 120mA
  • Noise Figure: 0.45dB
  • Current - Test: 10mA
  • Power - Output: 18dBm
  • Voltage - Rated: 4V
  • Package / Case: SOT-343F
  • Supplier Device Package: F4TSMM, M04
封裝: SOT-343F
庫存7,520
2GHz
14dB
2V
120mA
0.45dB
10mA
18dBm
4V
SOT-343F
F4TSMM, M04
2731GN-200M
Microsemi Corporation

FETS RF GAN 150V 2.7-3.1GHZ 55QP

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 12.2dB ~ 12.7dB
  • Voltage - Test: 60V
  • Current Rating: 5mA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 225W
  • Voltage - Rated: 150V
  • Package / Case: 55QP
  • Supplier Device Package: 55QP
封裝: 55QP
庫存4,848
2.7GHz ~ 3.1GHz
12.2dB ~ 12.7dB
60V
5mA
-
500mA
225W
150V
55QP
55QP
VRF2933MP
Microsemi Corporation

RF MOSFET N-CHANNEL 50V M177

  • Transistor Type: N-Channel
  • Frequency: 150MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: 2mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
封裝: M177
庫存3,056
150MHz
25dB
50V
2mA
-
250mA
300W
170V
M177
M177
VRF141G
Microsemi Corporation

RF PWR MOSFET 80V 40A DIE

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 300W
  • Voltage - Rated: 80V
  • Package / Case: SOT-540A
  • Supplier Device Package: -
封裝: SOT-540A
庫存4,688
175MHz
14dB
28V
40A
-
500mA
300W
80V
SOT-540A
-
BLF2425M9LS140J
Ampleon USA Inc.

TRANS RF 140W LDMOST

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封裝: SOT-502B
庫存5,520
-
-
-
-
-
-
-
-
SOT-502B
SOT502B
PXAD214218FV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 720 mA
  • Power - Output: 290W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
封裝: -
Request a Quote
2.11GHz ~ 2.17GHz
13.5dB
28 V
10µA
-
720 mA
290W
65 V
H-37275G-6/2
H-37275G-6/2
MWT-LN600
CML Microcircuits

RF MOSFET PHEMT FET 3V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 26GHz
  • Gain: 12dB
  • Voltage - Test: 3 V
  • Current Rating: -
  • Noise Figure: 0.5dB
  • Current - Test: 100 mA
  • Power - Output: 20dBm
  • Voltage - Rated: 5.5 V
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
庫存2,610
26GHz
12dB
3 V
-
0.5dB
100 mA
20dBm
5.5 V
Die
Die
PTFB210801FA-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: H-37265-2
  • Supplier Device Package: H-37265-2
封裝: -
Request a Quote
2.17GHz
18.5dB
28 V
-
-
750 mA
20W
65 V
H-37265-2
H-37265-2
BLC9H10XS-505AYZ
Ampleon USA Inc.

RF MOSFET LDMOS 48V SOT1273-1

  • Transistor Type: LDMOS
  • Frequency: 617MHz ~ 960MHz
  • Gain: 18.2dB
  • Voltage - Test: 48 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 500W
  • Voltage - Rated: 110 V
  • Package / Case: SOT-1273-1
  • Supplier Device Package: SOT1273-1
封裝: -
Request a Quote
617MHz ~ 960MHz
18.2dB
48 V
1.4µA
-
-
500W
110 V
SOT-1273-1
SOT1273-1
AFT27S006N-1000M
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BB503CCS-TL-H
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFB182557SH-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
TAV-541
Mini-Circuits

RF MOSFET E-PHEMT 3V FG873

  • Transistor Type: E-pHEMT
  • Frequency: 450MHz ~ 6GHz
  • Gain: 23.8dB
  • Voltage - Test: 3 V
  • Current Rating: -
  • Noise Figure: 1.8dB
  • Current - Test: 60 mA
  • Power - Output: 21.1dB
  • Voltage - Rated: 5 V
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: FG873
封裝: -
庫存1,221
450MHz ~ 6GHz
23.8dB
3 V
-
1.8dB
60 mA
21.1dB
5 V
4-SMD, No Lead
FG873
GTRA214602FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 14.4dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 490W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
封裝: -
Request a Quote
2.11GHz ~ 2.17GHz
14.4dB
48 V
-
-
150 mA
490W
125 V
H-37248C-4
H-37248C-4
DU2820S
MACOM Technology Solutions

RF MOSFET N-CHANNEL 28V

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 2MHz ~ 175MHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: 4L-FLG
  • Supplier Device Package: -
封裝: -
Request a Quote
2MHz ~ 175MHz
13dB
28 V
1mA
-
100 mA
20W
65 V
4L-FLG
-
PXAC192908FV-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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