電晶體 - FET、MOSFET - 陣列

APTM120VDA57T3G

Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 17A
• Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
• Power - Max: 390W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封裝: SP3

SP8M5FU6TB

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A, 7A
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

FD6M016N03

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 80A EPM15

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: EPM15
• Supplier Device Package: EPM15

封裝: EPM15

TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 3A VS-8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A
• Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
• Power - Max: 330mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: VS-8 (2.9x1.5)

封裝: 8-SMD, Flat Lead

IPG16N10S461AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 16A
• Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 9µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
• Power - Max: 29W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-10

封裝: 8-PowerVDFN

ALD212914SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

• FET Type: 2 N-Channel (Dual) Matched Pair
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 10.6V
• Current - Continuous Drain (Id) @ 25°C: 80mA
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 20mV @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 500mW
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

DMC1029UFDB-13

Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
• Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
• Power - Max: 1.4W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6 (Type B)

封裝: 6-UDFN Exposed Pad

CSD83325LT

Texas Instruments

MOSFET 2N-CH 12V 52A 6PICOSTAR

• FET Type: 2 N-Channel (Dual) Common Drain
• FET Feature: Standard
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 2.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA
• Supplier Device Package: 6-PicoStar

封裝: 6-XFBGA

ZXMC3A16DN8TC

Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
• Power - Max: 1.25W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

CSD87335Q3DT

Texas Instruments

MOSFET 2N-CH 30V 25A

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 25A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 1.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
• Power - Max: 6W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerLDFN
• Supplier Device Package: 8-LSON (3.3x3.3)

封裝: 8-PowerLDFN

SLA5060

Sanken

MOSFET 3N/3P-CH 60V 6A 12-SIP

• FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
• Power - Max: 5W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 12-SIP
• Supplier Device Package: 12-SIP

封裝: 12-SIP

STS8DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 10A 8SO

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V
• Power - Max: 2.7W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

SQ4940AEY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
• Power - Max: 4W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

DMC1016UPD-13

Diodes Incorporated

MOSFET 8V 24V POWERDI5060-8

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 12V, 20V
• Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
• Power - Max: 2.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8

封裝: 8-PowerTDFN

CSD85301Q2

Texas Instruments

MOSFET 2N-CH 20V 5A 6WSON

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate, 5V Drive
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5A
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V
• Power - Max: 2.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-WSON (2x2)

封裝: 6-WDFN Exposed Pad

FDG6318PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.5A SC70-6

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA
• Rds On (Max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.62nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 85.4pF @ 10V
• Power - Max: 300mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6

封裝: 6-TSSOP, SC-88, SOT-363

IRF7509TRPBF

Infineon Technologies

MOSFET N/P-CH 30V 2.7A/2A MICRO8

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: Micro8?

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

BSS84AKS,115

Nexperia USA Inc.

MOSFET 2P-CH 50V 0.16A 6TSSOP

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 160mA
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
• Power - Max: 445mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

MCQD04N06-TP

Micro Commercial Co

MOSFET

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 30V
• Power - Max: 1.7W (Tj)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封裝: -

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QS6K21FRATR

Rohm Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
• Power - Max: 950mW (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSMT6 (SC-95)

封裝: -

UFB25SC12E1BC3N

Qorvo

1200V/25A,SIC,FULL-BRIDGE,G3,E1B

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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NVMJD4D7N04CLTWG

onsemi

MOSFET N-CH 40V LFPAK56

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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GCMX020A120B3H1P

SemiQ

SIC 1200V 20M MOSFET FULL-BRIDGE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
• Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
• Vgs(th) (Max) @ Id: 4V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 800V
• Power - Max: 300W (Tc)
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

封裝: -

PSMN8R0-40HLX

Nexperia USA Inc.

MOSFET 2N-CH 40V 30A LFPAK56D

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
• Power - Max: 53W (Ta)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-1205, 8-LFPAK56
• Supplier Device Package: LFPAK56D

封裝: -

CAB400M12XM3

Wolfspeed, Inc.

MOSFET 2 N-CH 1200V MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
• Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
• Vgs(th) (Max) @ Id: 3.6V @ 92mA
• Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

封裝: -

SIZF5302DT-T1-RE3

Vishay Siliconix

MOSFET 2N-CH 30V 28.1A PWRPAIR

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
• Power - Max: 3.8W (Ta), 48.1W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 12-PowerPair™
• Supplier Device Package: PowerPAIR® 3x3FS

封裝: -

IRLHS6276TR2PBF

Infineon Technologies

MOSFET 2N-CH 20V 4.5A PQFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
• Power - Max: 1.5W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-PowerVDFN
• Supplier Device Package: 6-PQFN Dual (2x2)

封裝: -

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PJQ5850_R2_00001

Panjit International Inc.

MOSFET 2N-CH 40V 5A/14A 8DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
• Power - Max: 1.7W (Ta), 12W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: DFN5060B-8

封裝: -

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