頁 6 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7750TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 4.7A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存6,576	Logic Level Gate	20V	4.7A	30 mOhm @ 4.7A, 4.5V	1.2V @ 250µA	39nC @ 5V	1700pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDC6301N_G	Fairchild/ON Semiconductor	MOSFET 2N-CH SSOT6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,464	-	-	-	-	-	-	-	-	-	-	-	-
ECH8659-TL-HX	ON Semiconductor	MOSFET 2N-CH 30V 7A ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	封裝: 8-SMD, Flat Lead	庫存4,992	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-ECH
NDS8934	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存182,040	Logic Level Gate	20V	3.8A	70 mOhm @ 3.8A, 4.5V	1V @ 250µA	30nC @ 4.5V	1120pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDR8508P	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 3A SSOT-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 52 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: SuperSOT?-8	封裝: 8-SMD, Gull Wing	庫存41,280	Logic Level Gate	30V	3A	52 mOhm @ 3A, 10V	3V @ 250µA	12nC @ 5V	750pF @ 15V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Gull Wing	SuperSOT?-8
APTM50HM65FTG	Microsemi Corporation	MOSFET 4N-CH 500V 51A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封裝: SP4	庫存7,728	Standard	500V	51A	78 mOhm @ 25.5A, 10V	5V @ 2.5mA	140nC @ 10V	7000pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FW4604-TL-2W	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Power - Max: 1.8W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,696	Logic Level Gate, 4.5V Drive	30V	6A, 4.5A	39 mOhm @ 6A, 10V	-	9.1nC @ 10V	490pF @ 10V	1.8W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PMDPB55XP,115	Nexperia USA Inc.	MOSFET 2P-CH 20V 3.4A 6HUSON FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V Power - Max: 490mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	封裝: 6-UDFN Exposed Pad	庫存5,472	Logic Level Gate	20V	3.4A	70 mOhm @ 3.4A, 4.5V	900mV @ 250µA	25nC @ 5V	785pF @ 10V	490mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
DMT3020LFDB-13	Diodes Incorporated	MOSFET 2N-CHA 30V 7.7A DFN2020 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封裝: 6-UDFN Exposed Pad	庫存5,392	Standard	30V	7.7A (Ta)	20 mOhm @ 9A, 10V	3V @ 250µA	7nC @ 10V	393pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SQJQ906EL-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V PWRPAK8X8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 8 x 8 Dual Supplier Device Package: PowerPAK? 8 x 8 Dual	封裝: PowerPAK? 8 x 8 Dual	庫存3,296	Standard	40V	160A (Tc)	4.3 mOhm @ 5A, 10V	2.5V @ 250µA	45nC @ 10V	3238pF @ 20V	187W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 8 x 8 Dual	PowerPAK? 8 x 8 Dual
ECH8651R-TL-H	ON Semiconductor	MOSFET 2N-CH 24V 10A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	封裝: 8-SMD, Flat Lead	庫存8,664	Logic Level Gate	24V	10A	14 mOhm @ 5A, 4.5V	-	24nC @ 10V	-	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
HP8K22TB	Rohm Semiconductor	30V NCH+NCH MID POWER MOSFET FET Type: 2 N-Channel (Half Bridge) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 57A Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Power - Max: 25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封裝: 8-PowerTDFN	庫存21,840	-	30V	27A, 57A	4.6 mOhm @ 20A, 10V	2.5V @ 1mA	16.8nC @ 10V	1080pF @ 15V	25W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
US6M2TR	Rohm Semiconductor	MOSFET N/P-CH 30V/20V TUMT6 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	封裝: 6-SMD, Flat Leads	庫存1,609,164	Standard	30V, 20V	1.5A, 1A	240 mOhm @ 1.5A, 4.5V	1.5V @ 1mA	2.2nC @ 4.5V	80pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
SH8K25GZ0TB1	Rohm Semiconductor	MOSFET 2N-CH 40V 5.2A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存52,380	-	40V	5.2A (Ta)	85mOhm @ 5.2A, 10V	2.5V @ 1mA	1.7nC @ 5V	100pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
EAB450M12XM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 450A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V Vgs(th) (Max) @ Id: 3.6V @ 132mA Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存12	-	1200V (1.2kV)	450A (Tc)	3.7mOhm @ 450A, 15V	3.6V @ 132mA	1330nC @ 15V	38000pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
FW256-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
US6M2GTR	Rohm Semiconductor	MOSFET N/P-CH 30V/20V 1.5A TUMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V, 150pF @ 10V Power - Max: 1W Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	封裝: -	Request a Quote	-	30V, 20V	1.5A, 1A	240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V	1.5V @ 1mA, 2V @ 1mA	2.2nC @ 4.5V, 2.1nC @ 4.5V	80pF @ 10V, 150pF @ 10V	1W	150°C	Surface Mount	6-SMD, Flat Leads	TUMT6
DMNH6021SPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 8.2A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	封裝: -	Request a Quote	-	60V	8.2A (Ta), 32A(Tc)	25mOhm @ 15A, 10V	3V @ 250µA	20.1nC @ 10V	1143pF @ 25V	1.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
DMN52D0UDW-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	-	50V	350mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	42.3pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MCH6646-TL-E	onsemi	NCH+NCH 1.8 DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCB30P1200LB-TRR	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	封裝: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
BSO612CVGXUMA1	Infineon Technologies	MOSFET N/P-CH 8-SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP68D1LV-7	Diodes Incorporated	BSS FAMILY SOT563 T&R 3K FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 238mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	Request a Quote	-	60V	238mA (Ta)	8Ohm @ 100mA, 5V	2.1V @ 250µA	0.6nC @ 5V	42pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
AONX38168	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 25V 25A/62A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	封裝: -	庫存3,648	-	25V	25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)	3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V	1.9V @ 250µA, 1.8V @ 250µA	24nC @ 10V, 85nC @ 10V	1150pF @ 12.5V, 4520pF @ 12.5V	3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x6)
DMC2400UVQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V, 46.1pF @ 10V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	Request a Quote	-	20V	1.03A (Ta), 700mA (Ta)	480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V	900mV @ 250µA, 1V @ 250µA	0.5nC @ 4.5V	37.1pF @ 10V, 46.1pF @ 10V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NDS9955	onsemi	MOSFET 2N-CH 50V 3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Power - Max: 900mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	Logic Level Gate	50V	3A	130mOhm @ 3A, 10V	3V @ 250µA	30nC @ 10V	345pF @ 25V	900mW	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN2053UFDBQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封裝: -	Request a Quote	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	7.7nC @ 10V	369pF @ 10V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
NXH004P120M3F2PTHG	onsemi	ELITESIC, 3 MOHM SIC M3S MOSFET, FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 284A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 4.4V @ 120mA Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Power - Max: 785W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 36-PIM (56.7x62.8)	封裝: -	庫存90	-	1200V (1.2kV)	284A (Tc)	5.5mOhm @ 200A, 18V	4.4V @ 120mA	876nC @ 20V	16410pF @ 800V	785W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	36-PIM (56.7x62.8)

IRF7750TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存6,576

Logic Level Gate

20V

4.7A

30 mOhm @ 4.7A, 4.5V

1.2V @ 250µA

39nC @ 5V

1700pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDC6301N_G

Fairchild/ON Semiconductor

MOSFET 2N-CH SSOT6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,464

-

ECH8659-TL-HX

ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

封裝: 8-SMD, Flat Lead

庫存4,992

-

Surface Mount

8-SMD, Flat Lead

8-ECH

NDS8934

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存182,040

Logic Level Gate

20V

3.8A

70 mOhm @ 3.8A, 4.5V

1V @ 250µA

30nC @ 4.5V

1120pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDR8508P

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 3A SSOT-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 52 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: SuperSOT?-8

封裝: 8-SMD, Gull Wing

庫存41,280

Logic Level Gate

30V

3A

52 mOhm @ 3A, 10V

3V @ 250µA

12nC @ 5V

750pF @ 15V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Gull Wing

SuperSOT?-8

APTM50HM65FTG

Microsemi Corporation

MOSFET 4N-CH 500V 51A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封裝: SP4

庫存7,728

Standard

500V

51A

78 mOhm @ 25.5A, 10V

5V @ 2.5mA

140nC @ 10V

7000pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

FW4604-TL-2W

ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Power - Max: 1.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,696

Logic Level Gate, 4.5V Drive

30V

6A, 4.5A

39 mOhm @ 6A, 10V

-

9.1nC @ 10V

490pF @ 10V

1.8W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

PMDPB55XP,115

Nexperia USA Inc.

MOSFET 2P-CH 20V 3.4A 6HUSON

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V
Power - Max: 490mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

封裝: 6-UDFN Exposed Pad

庫存5,472

Logic Level Gate

20V

3.4A

70 mOhm @ 3.4A, 4.5V

900mV @ 250µA

25nC @ 5V

785pF @ 10V

490mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

DMT3020LFDB-13

Diodes Incorporated

MOSFET 2N-CHA 30V 7.7A DFN2020

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封裝: 6-UDFN Exposed Pad

庫存5,392

Standard

30V

7.7A (Ta)

20 mOhm @ 9A, 10V

3V @ 250µA

7nC @ 10V

393pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SQJQ906EL-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Power - Max: 187W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 8 x 8 Dual
Supplier Device Package: PowerPAK? 8 x 8 Dual

封裝: PowerPAK? 8 x 8 Dual

庫存3,296

Standard

40V

160A (Tc)

4.3 mOhm @ 5A, 10V

2.5V @ 250µA

45nC @ 10V

3238pF @ 20V

187W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? 8 x 8 Dual

ECH8651R-TL-H

ON Semiconductor

MOSFET 2N-CH 24V 10A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

封裝: 8-SMD, Flat Lead

庫存8,664

Logic Level Gate

24V

10A

14 mOhm @ 5A, 4.5V

-

24nC @ 10V

-

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

HP8K22TB

Rohm Semiconductor

30V NCH+NCH MID POWER MOSFET

FET Type: 2 N-Channel (Half Bridge)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A, 57A
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Power - Max: 25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封裝: 8-PowerTDFN

庫存21,840

-

30V

27A, 57A

4.6 mOhm @ 20A, 10V

2.5V @ 1mA

16.8nC @ 10V

1080pF @ 15V

25W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

US6M2TR

Rohm Semiconductor

MOSFET N/P-CH 30V/20V TUMT6

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

封裝: 6-SMD, Flat Leads

庫存1,609,164

Standard

30V, 20V

1.5A, 1A

240 mOhm @ 1.5A, 4.5V

1.5V @ 1mA

2.2nC @ 4.5V

80pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

SH8K25GZ0TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 5.2A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存52,380

-

40V

5.2A (Ta)

85mOhm @ 5.2A, 10V

2.5V @ 1mA

1.7nC @ 5V

100pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

EAB450M12XM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 450A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存12

-

1200V (1.2kV)

450A (Tc)

3.7mOhm @ 450A, 15V

3.6V @ 132mA

1330nC @ 15V

38000pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

FW256-TL-E

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

US6M2GTR

Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TUMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V, 150pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

封裝: -

Request a Quote

-

30V, 20V

1.5A, 1A

240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V

1.5V @ 1mA, 2V @ 1mA

2.2nC @ 4.5V, 2.1nC @ 4.5V

80pF @ 10V, 150pF @ 10V

1W

150°C

Surface Mount

6-SMD, Flat Leads

TUMT6

DMNH6021SPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 8.2A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type R)

封裝: -

Request a Quote

-

60V

8.2A (Ta), 32A(Tc)

25mOhm @ 15A, 10V

3V @ 250µA

20.1nC @ 10V

1143pF @ 25V

1.5W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type R)

DMN52D0UDW-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

Request a Quote

-

50V

350mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.5nC @ 10V

42.3pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MCH6646-TL-E

onsemi

NCH+NCH 1.8 DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MCB30P1200LB-TRR

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

封裝: -

Request a Quote

-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

BSO612CVGXUMA1

Infineon Technologies

MOSFET N/P-CH 8-SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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DMP68D1LV-7

Diodes Incorporated

BSS FAMILY SOT563 T&R 3K

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 238mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

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60V

238mA (Ta)

8Ohm @ 100mA, 5V

2.1V @ 250µA

0.6nC @ 5V

42pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

AONX38168

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 25A/62A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

封裝: -

庫存3,648

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25V

25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)

3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V

1.9V @ 250µA, 1.8V @ 250µA

24nC @ 10V, 85nC @ 10V

1150pF @ 12.5V, 4520pF @ 12.5V

3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x6)

DMC2400UVQ-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V, 46.1pF @ 10V
Power - Max: 450mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

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20V

1.03A (Ta), 700mA (Ta)

480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V

900mV @ 250µA, 1V @ 250µA

0.5nC @ 4.5V

37.1pF @ 10V, 46.1pF @ 10V

450mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NDS9955

onsemi

MOSFET 2N-CH 50V 3A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Power - Max: 900mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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Logic Level Gate

50V

3A

130mOhm @ 3A, 10V

3V @ 250µA

30nC @ 10V

345pF @ 25V

900mW

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN2053UFDBQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 4.6A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封裝: -

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20V

4.6A (Ta)

35mOhm @ 5A, 4.5V

1V @ 250µA

7.7nC @ 10V

369pF @ 10V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

NXH004P120M3F2PTHG

onsemi

ELITESIC, 3 MOHM SIC M3S MOSFET,

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 284A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Power - Max: 785W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 36-PIM (56.7x62.8)

封裝: -

庫存90

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1200V (1.2kV)

284A (Tc)

5.5mOhm @ 200A, 18V

4.4V @ 120mA

876nC @ 20V

16410pF @ 800V

785W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

36-PIM (56.7x62.8)