頁 43 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF6702M2DTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 15A DIRECTFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Power - Max: 2.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MA Supplier Device Package: DIRECTFET? MA	封裝: DirectFET? Isometric MA	庫存6,048	Logic Level Gate	30V	15A	6.6 mOhm @ 15A, 10V	2.35V @ 25µA	14nC @ 4.5V	1380pF @ 15V	2.7W	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET? Isometric MA	DIRECTFET? MA
AO4806L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 9.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,872	Logic Level Gate	20V	-	14 mOhm @ 9.4A, 10V	1V @ 250µA	17.9nC @ 4.5V	1810pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1988DH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封裝: 6-TSSOP, SC-88, SOT-363	庫存414,300	Logic Level Gate	20V	1.3A	168 mOhm @ 1.4A, 4.5V	1V @ 250µA	4.1nC @ 8V	110pF @ 10V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
FDW2601NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 8.2A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存120,360	Logic Level Gate	30V	8.2A	15 mOhm @ 8.2A, 4.5V	1.5V @ 250µA	30nC @ 4.5V	1840pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
BSC0910NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 16A/31A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11A, 31A Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封裝: 8-PowerTDFN	庫存3,136	Logic Level Gate, 4.5V Drive	25V	11A, 31A	4.6 mOhm @ 25A, 10V	2V @ 250µA	6.6nC @ 4.5V	4500pF @ 12V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
SIA915DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 4.5A SC-70-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封裝: PowerPAK? SC-70-6 Dual	庫存4,080	Logic Level Gate	30V	4.5A	87 mOhm @ 2.9A, 10V	2.2V @ 250µA	9nC @ 10V	275pF @ 15V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
VEC2616-TL-W	ON Semiconductor	MOSFET N/P-CH 60V 3A/2.5A VEC8 FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	封裝: 8-SMD, Flat Lead	庫存6,832	Logic Level Gate, 4V Drive	60V	3A, 2.5A	80 mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
IRF9389TRPBF	Infineon Technologies	MOSFET N/P-CH 30V 6.8A/4.6A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存380,244	Logic Level Gate	30V	6.8A, 4.6A	27 mOhm @ 6.8A, 10V	2.3V @ 10µA	14nC @ 10V	398pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD310702ASCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 180mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存7,312	Standard	8V	-	-	180mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SH8M5TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 6A/7A SOP8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,168	Logic Level Gate	30V	6A, 7A	30 mOhm @ 6A, 10V	2.5V @ 1mA	7.2nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMS3669S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/18A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	封裝: 8-PowerTDFN	庫存29,940	Logic Level Gate	30V	13A, 18A	10 mOhm @ 13A, 10V	2.7V @ 250µA	24nC @ 10V	1605pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
DMN2028UFU-7	Diodes Incorporated	MOSFET 2N-CH 20V 7.5A UDFN2030-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	封裝: 6-UFDFN Exposed Pad	庫存6,896	Standard	20V	7.5A	20.2 mOhm @ 4.5A, 4.5V	1V @ 250µA	18.4nC @ 8V	887pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
SIZ790DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	封裝: 6-PowerPair?	庫存29,772	Logic Level Gate	30V	16A, 35A	9.3 mOhm @ 15A, 10V	2.2V @ 250µA	24nC @ 10V	830pF @ 15V	27W, 48W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
STS8DN6LF6AG	STMicroelectronics	AUTOMOTIVE-GRADE DUAL N-CHANNEL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存23,898	Logic Level Gate	60V	8A (Ta)	24 mOhm @ 4A, 10V	2.5V @ 250µA	27nC @ 10V	1340pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN2300UFL4-7	Diodes Incorporated	MOSFET 2N-CH 20V 2.11A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.11A Rds On (Max) @ Id, Vgs: 195 mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V Power - Max: 530mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: X2-DFN1310-6	封裝: 6-XFDFN Exposed Pad	庫存169,110	Logic Level Gate	20V	2.11A	195 mOhm @ 300mA, 4.5V	950mV @ 250µA	1.6nC @ 4.5V	64.3pF @ 25V	530mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	X2-DFN1310-6
G1K2C10S2	Goford Semiconductor	MOSFET 100V 3A/3.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V Power - Max: 2W (Tc), 3.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存12,000	-	100V	3A (Tc), 3.5A (Tc)	130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V	2.5V @ 250µA	22nC @ 10V, 23nC @ 10V	668pF @ 50V, 1732pF @ 50V	2W (Tc), 3.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2025UFDB-7	Diodes Incorporated	MOSFET 2N-CH 20V 6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封裝: -	Request a Quote	-	20V	6A (Ta)	25mOhm @ 4A, 4.5V	1V @ 250µA	12.3nC @ 10V	486pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SSFN3010H	Good-Ark Semiconductor	MOSFET, N-CH, DUAL, 19.50A, 30V, FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x3)	封裝: -	庫存27,000	-	30V	10.8A (Ta), 19.5A (Tc)	10.5mOhm @ 10A, 10V	2.5V @ 250µA	31nC @ 10V	900pF @ 25V	27W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x3)
NVMFD5C478NLT1G	onsemi	MOSFET 2N-CH 40V 10.5A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power - Max: 3.1W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封裝: -	庫存4,500	-	40V	10.5A (Ta), 29A (Tc)	14.5mOhm @ 7.5A, 10V	2.2V @ 20µA	8.1nC @ 10V	420pF @ 25V	3.1W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
G200P04S2	Goford Semiconductor	MOSFET 2P-CH 40V 9A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V Power - Max: 2.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存7,497	-	40V	9A (Tc)	20mOhm @ 7A, 10V	2.5V @ 250µA	42nC @ 10V	2365pF @ 20V	2.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2710UVQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 0.92A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	庫存29,550	-	20V	920mA (Ta)	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V	42pF @ 16V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
IRF7105QTRPBF	Infineon Technologies	MOSFET N/P-CH 25V 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: -	Request a Quote	-	25V	3.5A, 2.3A	100mOhm @ 1A, 10V	3V @ 250µA	27nC @ 10V	330pF @ 15V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMDPB30XNZ	Nexperia USA Inc.	MOSFET 2N-CH 20V 4A 6HUSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Power - Max: 490mW (Ta), 8.33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	封裝: -	庫存14,370	-	20V	4A (Ta)	40mOhm @ 3A, 4.5V	900mV @ 250µA	-	660pF @ 10V	490mW (Ta), 8.33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-HUSON (2x2)
NXH020F120MNF1PTG	onsemi	SIC 4N-CH 1200V 51A 22PIM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V Power - Max: 119W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 22-PIM (33.8x42.5)	封裝: -	Request a Quote	-	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	2420pF @ 800V	119W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	22-PIM (33.8x42.5)
SIL2623A-TP	Micro Commercial Co	MOSFET 2P-CH 30V 3A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	封裝: -	庫存26,025	-	30V	3A	90mOhm @ 3A, 10V	2.5V @ 250µA	7.5nC @ 15V	365pF @ 10V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
SQ4949EY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 7.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存138,447	-	30V	7.5A (Tc)	35mOhm @ 5.9A, 10V	2.5V @ 250µA	30nC @ 10V	1020pF @ 25V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MSCSM120AM042T6AG	Microchip Technology	SIC 2N-CH 1200V 495A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 18mA	1392nC @ 20V	18100pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SQJ570EP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 100V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V, 650pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存9,000	-	100V	15A (Tc), 9.5A (Tc)	45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V	2.5V @ 250µA	15nC @ 10V, 20nC @ 10V	600pF @ 25V, 650pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual

IRF6702M2DTRPBF

Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric MA
Supplier Device Package: DIRECTFET? MA

封裝: DirectFET? Isometric MA

庫存6,048

Logic Level Gate

30V

15A

6.6 mOhm @ 15A, 10V

2.35V @ 25µA

14nC @ 4.5V

1380pF @ 15V

2.7W

-55°C ~ 175°C (TJ)

Surface Mount

DirectFET? Isometric MA

DIRECTFET? MA

AO4806L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 9.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,872

Logic Level Gate

20V

-

14 mOhm @ 9.4A, 10V

1V @ 250µA

17.9nC @ 4.5V

1810pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1988DH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封裝: 6-TSSOP, SC-88, SOT-363

庫存414,300

Logic Level Gate

20V

1.3A

168 mOhm @ 1.4A, 4.5V

1V @ 250µA

4.1nC @ 8V

110pF @ 10V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

FDW2601NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 8.2A 8TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存120,360

Logic Level Gate

30V

8.2A

15 mOhm @ 8.2A, 4.5V

1.5V @ 250µA

30nC @ 4.5V

1840pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

BSC0910NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 16A/31A TISON8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封裝: 8-PowerTDFN

庫存3,136

Logic Level Gate, 4.5V Drive

25V

11A, 31A

4.6 mOhm @ 25A, 10V

2V @ 250µA

6.6nC @ 4.5V

4500pF @ 12V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

SIA915DJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 4.5A SC-70-6L

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封裝: PowerPAK? SC-70-6 Dual

庫存4,080

Logic Level Gate

30V

4.5A

87 mOhm @ 2.9A, 10V

2.2V @ 250µA

9nC @ 10V

275pF @ 15V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

VEC2616-TL-W

ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A VEC8

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

封裝: 8-SMD, Flat Lead

庫存6,832

Logic Level Gate, 4V Drive

60V

3A, 2.5A

80 mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

IRF9389TRPBF

Infineon Technologies

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存380,244

Logic Level Gate

30V

6.8A, 4.6A

27 mOhm @ 6.8A, 10V

2.3V @ 10µA

14nC @ 10V

398pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ALD310702ASCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 180mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存7,312

Standard

8V

-

180mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SH8M5TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A SOP8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,168

Logic Level Gate

30V

6A, 7A

30 mOhm @ 6A, 10V

2.5V @ 1mA

7.2nC @ 5V

520pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDMS3669S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/18A PWR56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

封裝: 8-PowerTDFN

庫存29,940

Logic Level Gate

30V

13A, 18A

10 mOhm @ 13A, 10V

2.7V @ 250µA

24nC @ 10V

1605pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

DMN2028UFU-7

Diodes Incorporated

MOSFET 2N-CH 20V 7.5A UDFN2030-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

封裝: 6-UFDFN Exposed Pad

庫存6,896

Standard

20V

7.5A

20.2 mOhm @ 4.5A, 4.5V

1V @ 250µA

18.4nC @ 8V

887pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

SIZ790DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A 6-POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

封裝: 6-PowerPair?

庫存29,772

Logic Level Gate

30V

16A, 35A

9.3 mOhm @ 15A, 10V

2.2V @ 250µA

24nC @ 10V

830pF @ 15V

27W, 48W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

STS8DN6LF6AG

STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存23,898

Logic Level Gate

60V

8A (Ta)

24 mOhm @ 4A, 10V

2.5V @ 250µA

27nC @ 10V

1340pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN2300UFL4-7

Diodes Incorporated

MOSFET 2N-CH 20V 2.11A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A
Rds On (Max) @ Id, Vgs: 195 mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V
Power - Max: 530mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: X2-DFN1310-6

封裝: 6-XFDFN Exposed Pad

庫存169,110

Logic Level Gate

20V

2.11A

195 mOhm @ 300mA, 4.5V

950mV @ 250µA

1.6nC @ 4.5V

64.3pF @ 25V

530mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

X2-DFN1310-6

G1K2C10S2

Goford Semiconductor

MOSFET 100V 3A/3.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Power - Max: 2W (Tc), 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存12,000

-

100V

3A (Tc), 3.5A (Tc)

130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V

2.5V @ 250µA

22nC @ 10V, 23nC @ 10V

668pF @ 50V, 1732pF @ 50V

2W (Tc), 3.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN2025UFDB-7

Diodes Incorporated

MOSFET 2N-CH 20V 6A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封裝: -

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-

20V

6A (Ta)

25mOhm @ 4A, 4.5V

1V @ 250µA

12.3nC @ 10V

486pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SSFN3010H

Good-Ark Semiconductor

MOSFET, N-CH, DUAL, 19.50A, 30V,

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (3x3)

封裝: -

庫存27,000

-

30V

10.8A (Ta), 19.5A (Tc)

10.5mOhm @ 10A, 10V

2.5V @ 250µA

31nC @ 10V

900pF @ 25V

27W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (3x3)

NVMFD5C478NLT1G

onsemi

MOSFET 2N-CH 40V 10.5A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Power - Max: 3.1W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封裝: -

庫存4,500

-

40V

10.5A (Ta), 29A (Tc)

14.5mOhm @ 7.5A, 10V

2.2V @ 20µA

8.1nC @ 10V

420pF @ 25V

3.1W (Ta), 23W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

G200P04S2

Goford Semiconductor

MOSFET 2P-CH 40V 9A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V
Power - Max: 2.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存7,497

-

40V

9A (Tc)

20mOhm @ 7A, 10V

2.5V @ 250µA

42nC @ 10V

2365pF @ 20V

2.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN2710UVQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 0.92A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

庫存29,550

-

20V

920mA (Ta)

450mOhm @ 600mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V

42pF @ 16V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

IRF7105QTRPBF

Infineon Technologies

MOSFET N/P-CH 25V 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: -

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-

25V

3.5A, 2.3A

100mOhm @ 1A, 10V

3V @ 250µA

27nC @ 10V

330pF @ 15V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMDPB30XNZ

Nexperia USA Inc.

MOSFET 2N-CH 20V 4A 6HUSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Power - Max: 490mW (Ta), 8.33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-HUSON (2x2)

封裝: -

庫存14,370

-

20V

4A (Ta)

40mOhm @ 3A, 4.5V

900mV @ 250µA

-

660pF @ 10V

490mW (Ta), 8.33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-HUSON (2x2)

NXH020F120MNF1PTG

onsemi

SIC 4N-CH 1200V 51A 22PIM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Power - Max: 119W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 22-PIM (33.8x42.5)

封裝: -

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-

1200V (1.2kV)

51A (Tc)

30mOhm @ 50A, 20V

4.3V @ 20mA

213.5nC @ 20V

2420pF @ 800V

119W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

22-PIM (33.8x42.5)

SIL2623A-TP

Micro Commercial Co

MOSFET 2P-CH 30V 3A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

封裝: -

庫存26,025

-

30V

3A

90mOhm @ 3A, 10V

2.5V @ 250µA

7.5nC @ 15V

365pF @ 10V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

SQ4949EY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 30V 7.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存138,447

-

30V

7.5A (Tc)

35mOhm @ 5.9A, 10V

2.5V @ 250µA

30nC @ 10V

1020pF @ 25V

3.3W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MSCSM120AM042T6AG

Microchip Technology

SIC 2N-CH 1200V 495A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 18mA

1392nC @ 20V

18100pF @ 1000V

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SQJ570EP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 100V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V, 650pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存9,000

-

100V

15A (Tc), 9.5A (Tc)

45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V

2.5V @ 250µA

15nC @ 10V, 20nC @ 10V

600pF @ 25V, 650pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual