頁 202 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 陣列

記錄 5,684
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描述
封裝
庫存
數量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF5852
Infineon Technologies

MOSFET 2N-CH 20V 2.7A 6-TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
  • Power - Max: 960mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封裝: SOT-23-6 Thin, TSOT-23-6
庫存12,444
Logic Level Gate
20V
2.7A
90 mOhm @ 2.7A, 4.5V
1.25V @ 250µA
6nC @ 4.5V
400pF @ 15V
960mW
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
2N7002PS/ZLH
Nexperia USA Inc.

MOSFET SS SC-88

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,552
-
-
-
-
-
-
-
-
-
-
-
-
AO4821L
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 12V 9A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存7,792
Logic Level Gate
12V
9A
19 mOhm @ 9A, 4.5V
850mV @ 250µA
23nC @ 4.5V
2100pF @ 6V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AON6922
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 18A/31A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 18A, 31A
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 12.5V
  • Power - Max: 2W, 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (5x6)
封裝: 8-WDFN Exposed Pad
庫存3,168
Logic Level Gate
25V
18A, 31A
3.8 mOhm @ 20A, 10V
1.7V @ 250µA
32nC @ 10V
2340pF @ 12.5V
2W, 2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN-EP (5x6)
SI3529DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 2.5A 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封裝: SOT-23-6 Thin, TSOT-23-6
庫存4,848
Logic Level Gate
40V
2.5A, 1.95A
125 mOhm @ 2.2A, 10V
3V @ 250µA
7nC @ 10V
205pF @ 20V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SI5519DU-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFETs

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
封裝: PowerPAK? ChipFET? Dual
庫存6,064
Standard
20V
6A
36 mOhm @ 6.1A, 4.5V
1.8V @ 250µA
17.5nC @ 10V
660pF @ 10V
10.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
hot NTGD3149CT1G
ON Semiconductor

MOSFET N/P-CH 20V 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.4A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 387pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封裝: SOT-23-6 Thin, TSOT-23-6
庫存782,472
Logic Level Gate
20V
3.2A, 2.4A
60 mOhm @ 3.5A, 4.5V
1V @ 250µA
5.5nC @ 4.5V
387pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
APTC80DDA29T3G
Microsemi Corporation

MOSFET 2N-CH 800V 15A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
  • Power - Max: 156W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封裝: SP3
庫存3,088
Standard
800V
15A
290 mOhm @ 7.5A, 10V
3.9V @ 1mA
90nC @ 10V
2254pF @ 25V
156W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
hot SIA911DJ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封裝: PowerPAK? SC-70-6 Dual
庫存218,580
Standard
20V
4.5A
94 mOhm @ 2.8A, 4.5V
1V @ 250µA
12.8nC @ 8V
355pF @ 10V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SI1035X-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V SOT563F

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
封裝: SOT-563, SOT-666
庫存3,088,776
Logic Level Gate
20V
180mA, 145mA
5 Ohm @ 200mA, 4.5V
400mV @ 250µA (Min)
0.75nC @ 4.5V
-
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot NDS9959
Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存686,088
Standard
50V
2A
300 mOhm @ 1.5A, 10V
4V @ 250µA
15nC @ 10V
250pF @ 25V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IPG20N04S4L08AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
  • Power - Max: 54W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
封裝: 8-PowerVDFN
庫存6,992
Logic Level Gate
40V
20A
8.2 mOhm @ 17A, 10V
2.2V @ 22µA
39nC @ 10V
3050pF @ 25V
54W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
hot SI1023CX-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V SC89-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
  • Power - Max: 220mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
封裝: SOT-563, SOT-666
庫存42,720
Logic Level Gate
20V
-
756 mOhm @ 350mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
45pF @ 10V
220mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot SIA519EDJ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 4.5A SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封裝: PowerPAK? SC-70-6 Dual
庫存42,360
Logic Level Gate
20V
4.5A
40 mOhm @ 4.2A, 4.5V
1.4V @ 250µA
12nC @ 10V
350pF @ 10V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
CTLDM304P-M832DS TR
Central Semiconductor Corp

MOSFET 2P-CH 30V 4.2A TLM832DS

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
  • Power - Max: 1.65W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
封裝: 8-TDFN Exposed Pad
庫存5,728
Standard
30V
4.2A
70 mOhm @ 4.2A, 10V
1.3V @ 250µA
6.4nC @ 4.5V
760pF @ 15V
1.65W
-55°C ~ 150°C (TJ)
Surface Mount
8-TDFN Exposed Pad
TLM832DS
SC8673040L
Panasonic Electronic Components

MOSFET 2N-CH 30V 16A/46A 8-HSO

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 46A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 5.85mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 10V
  • Power - Max: 1.7W, 2.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-HSO
封裝: 8-PowerSMD, Flat Leads
庫存26,154
Logic Level Gate
30V
16A, 46A
10 mOhm @ 8A, 10V
3V @ 5.85mA
6.3nC @ 4.5V
1092pF @ 10V
1.7W, 2.5W
150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-HSO
hot SH8M24TB1
Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A/3.5A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存44,544
Standard
45V
4.5A, 3.5A
46 mOhm @ 4.5A, 10V
2.5V @ 1mA
9.6nC @ 5V
550pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6N43FU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 200mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: 6-TSSOP, SC-88, SOT-363
庫存27,318
Logic Level Gate, 1.5V Drive
20V
500mA
630 mOhm @ 200mA, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
200mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
EM6K7T2CR
Rohm Semiconductor

MOSFET 2N-CH 20V 0.2A EMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
封裝: -
庫存8,631
-
20V
200mA (Ta)
1.2Ohm @ 200mA, 2.5V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
DMG6602SVTX-7
Diodes Incorporated

MOSFET N/P-CH 30V 3.4A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
  • Power - Max: 840mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封裝: -
庫存10,644
-
30V
3.4A (Ta), 2.8A (Ta)
60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
2.3V @ 250µA
13nC @ 10V, 9nC @ 10V
400pF @ 15V, 420pF @ 15V
840mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
AOC3860
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XDFN
  • Supplier Device Package: 6-DFN (3.05x1.77)
封裝: -
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-
-
-
-
900mV @ 250µA
44nC @ 4.5V
-
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
6-XDFN
6-DFN (3.05x1.77)
DMP2101UCP9-7
Diodes Incorporated

MOSFET 2P-CH 20V 2.5A 9DSN1515

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V
  • Power - Max: 970mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-XFBGA, DSBGA
  • Supplier Device Package: X2-DSN1515-9 (Type B)
封裝: -
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-
20V
2.5A (Ta)
100mOhm @ 1A, 4.5V
900mV @ 250µA
3.2nC @ 4.5V
392pF @ 10V
970mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-XFBGA, DSBGA
X2-DSN1515-9 (Type B)
FDS8984_F123
onsemi

MOSFET 2N-CH 30V 8-SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMP58D1LV-7
Diodes Incorporated

MOSFET 2P-CH 50V 0.22A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
  • Power - Max: 490mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封裝: -
庫存8,955
-
50V
220mA (Ta)
8Ohm @ 100mA, 5V
2V @ 250µA
1.2nC @ 10V
37pF @ 25V
490mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
FDPC1002S
Fairchild Semiconductor

MOSFET 2N-CH 25V 13A PWRCLIP-33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @13V, 4335pF @ 13V
  • Power - Max: 1.6W (Ta), 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Powerclip-33
封裝: -
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-
25V
13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
2.2V @ 250µA, 2.2V @ 1mA
19nC @ 10V, 64nC @ 10V
1240pF @13V, 4335pF @ 13V
1.6W (Ta), 2W (Ta)
-55°C ~ 150°C
Surface Mount
8-PowerWDFN
Powerclip-33
AO4840E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 6A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
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-
40V
6A (Ta)
28mOhm @ 6A, 10V
2.6V @ 250µA
10nC @ 4.5V
520pF @ 20V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
GCMX005A120B3B1P
SemiQ

SIC 1200V 5M MOSFET HALF-BRIDGE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 383A (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 927nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23500pF @ 800V
  • Power - Max: 1.154kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
庫存30
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1200V (1.2kV)
383A (Tc)
7mOhm @ 200A, 20V
4V @ 80mA
927nC @ 20V
23500pF @ 800V
1.154kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
SSM6N813R-LXHF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封裝: -
庫存15,822
Logic Level Gate, 4.5V Drive
100V
3.5A (Ta)
112mOhm @ 3.5A, 10V
2.5V @ 100µA
3.6nC @ 4.5V
242pF @ 15V
1.5W (Ta)
175°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F