頁 193 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 陣列

記錄 5,684
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描述
封裝
庫存
數量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AO4842L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存60,576
Logic Level Gate
30V
-
22 mOhm @ 7.5A, 10V
2.6V @ 250µA
11nC @ 10V
448pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI7909DN-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 5.3A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
封裝: PowerPAK? 1212-8 Dual
庫存37,032
Logic Level Gate
12V
5.3A
37 mOhm @ 7.7A, 4.5V
1V @ 700µA
24nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
SI4563DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 8A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
  • Power - Max: 3.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,224
Standard
40V
8A
16 mOhm @ 5A, 10V
2V @ 250µA
85nC @ 10V
2390pF @ 20V
3.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI6993DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 3.6A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存25,200
Logic Level Gate
30V
3.6A
31 mOhm @ 4.7A, 10V
3V @ 250µA
20nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDW2516NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 5.8A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存22,800
Logic Level Gate
20V
5.8A
30 mOhm @ 5.8A, 4.5V
1.5V @ 250µA
12nC @ 5V
745pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
APTM10DSKM09T3G
Microsemi Corporation

MOSFET 2N-CH 100V 139A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 139A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封裝: SP3
庫存3,296
Standard
100V
139A
10 mOhm @ 69.5A, 10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTC60AM83BC1G
Microsemi Corporation

MOSFET 3N-CH 600V 36A SP1

  • FET Type: 3 N Channel (Phase Leg + Boost Chopper)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 36A
  • Rds On (Max) @ Id, Vgs: 83 mOhm @ 24.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封裝: SP1
庫存5,424
Super Junction
600V
36A
83 mOhm @ 24.5A, 10V
5V @ 3mA
250nC @ 10V
7200pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
NVMFD5852NLWFT1G
ON Semiconductor

MOSFET 2N-CH 40V 15A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
封裝: 8-PowerTDFN
庫存3,360
Logic Level Gate
40V
15A
6.9 mOhm @ 20A, 10V
2.4V @ 250µA
36nC @ 10V
1800pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5489NLWFT3G
ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
封裝: 8-PowerTDFN
庫存4,224
Logic Level Gate
60V
4.5A
65 mOhm @ 15A, 10V
2.5V @ 250µA
12.4nC @ 10V
330pF @ 25V
3W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
ALD110800ASCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
  • Vgs(th) (Max) @ Id: 10mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.154", 3.90mm Width)
庫存6,624
Standard
10.6V
-
500 Ohm @ 4V
10mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot SI7252DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 36.7A PPAK 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36.7A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
  • Power - Max: 46W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封裝: PowerPAK? SO-8 Dual
庫存8,340
Logic Level Gate
100V
36.7A
18 mOhm @ 15A, 10V
3.5V @ 250µA
27nC @ 10V
1170pF @ 50V
46W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
APTC60HM35T3G
Microsemi Corporation

MOSFET 4N-CH 600V 72A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封裝: SP3
庫存6,928
Standard
600V
72A
35 mOhm @ 72A, 10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
CMKDM8005 TR
Central Semiconductor Corp

MOSFET 2P-CH 20V 0.65A SOT363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 650mA
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存4,800
Logic Level Gate
20V
650mA
360 mOhm @ 350mA, 4.5V
1V @ 250µA
1.2nC @ 4.5V
100pF @ 16V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
IRF7303PBF
Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存17,604
Standard
30V
4.9A
50 mOhm @ 2.4A, 10V
1V @ 250µA
25nC @ 10V
520pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot BSO220N03MD G
Infineon Technologies

MOSFET 2N-CH 30V 6A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.7A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存760,992
Logic Level Gate
30V
6A
22 mOhm @ 7.7A, 10V
2.1V @ 250µA
10nC @ 10V
800pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
NTMD3N08LR2
onsemi

MOSFET PWR N-CHAN DUAL 80V 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 215mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
Request a Quote
Logic Level Gate
80V
2.3A
215mOhm @ 2.5A, 10V
3V @ 250µA
15nC @ 10V
480pF @ 25V
3.1W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AOD661
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 12A TO252-4L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V, 22.5mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
  • Power - Max: 15.6W, 31W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
封裝: -
Request a Quote
-
30V
12A (Tc)
16.5mOhm @ 12A, 10V, 22.5mOhm @ 9.7A, 10V
2.5V @ 250µA
10nC @ 4.5V, 15nC @ 4.5V
760pF @ 15V
15.6W, 31W
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
TO-252-4L
HP8M31TB1
Rohm Semiconductor

MOSFET N/P-CH 60V 8.5A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
封裝: -
庫存3
-
60V
8.5A (Ta)
65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
3V @ 1mA
12.3nC @ 10V, 38nC @ 10V
470pF @ 30V, 2300pF @ 30V
3W (Ta)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
UPA3753GR-E1-AX
Renesas Electronics Corporation

MOSFET 2N-CH 60V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
  • Power - Max: 1.12W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: -
庫存15,000
-
60V
5A (Ta)
56mOhm @ 2.5A, 10V
-
13.4nC @ 10V
640pF @ 10V
1.12W
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SQJ914EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封裝: -
庫存37,500
-
30V
30A (Tc)
12mOhm @ 4.5A, 10V
2.5V @ 250µA
25nC @ 10V
1110pF @ 15V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIS903DN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 6A PPAK 1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
  • Power - Max: 2.6W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
封裝: -
庫存64,770
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20V
6A (Tc)
20.1mOhm @ 5A, 4.5V
1V @ 250µA
42nC @ 10V
2565pF @ 10V
2.6W (Ta), 23W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
SSM6P54TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 1.2A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 228mOhm @ 600mA, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封裝: -
庫存13,695
Logic Level Gate, 1.5V Drive
20V
1.2A (Ta)
228mOhm @ 600mA, 2.5V
1V @ 1mA
7.7nC @ 4V
331pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6P47NU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
封裝: -
庫存8,649
Logic Level Gate
20V
4A
95mOhm @ 1.5A, 4.5V
1V @ 1mA
4.6nC @ 4.5V
290pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN (2x2)
PSMN8R5-40HSX
Nexperia USA Inc.

MOSFET 2N-CH 40V 30A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V
  • Power - Max: 53W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
封裝: -
庫存4,770
-
40V
30A (Ta)
8.5mOhm @ 15A, 10V
4V @ 1mA
21.8nC @ 10V
1439pF @ 25V
53W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
SI3439KDW-TP
Micro Commercial Co

MOSFET N/P-CH 20V 0.75A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 113pF @ 16V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: -
Request a Quote
Logic Level Gate
20V
750mA, 660mA
380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
1.1V @ 250µA
-
120pF @ 16V, 113pF @ 16V
150mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMTH10H032LPDW-13
Diodes Incorporated

MOSFET 2N-CH 100V 24A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
  • Power - Max: 3W (Ta), 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
封裝: -
Request a Quote
-
100V
24A (Tc)
32mOhm @ 5A, 10V
2.5V @ 250µA
11.9nC @ 10V
683pF @ 50V
3W (Ta), 37W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
MSCSM120HM16T3AG
Microchip Technology

SIC 4N-CH 1200V 173A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 745W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
Request a Quote
-
1200V (1.2kV)
173A (Tc)
16mOhm @ 80A, 20V
2.8V @ 6mA
464nC @ 20V
6040pF @ 1000V
745W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
GCMX040A120B3H1P
SemiQ

SIC 1200V 40M MOSFET FULL-BRIDGE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
  • Power - Max: 208W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
庫存60
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1200V (1.2kV)
53A (Tc)
52mOhm @ 40A, 20V
4V @ 10mA
125nC @ 20V
3200pF @ 800V
208W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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