頁 177 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 陣列

記錄 5,684
頁  177/203
圖片
零件編號
製造商
描述
封裝
庫存
數量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF9389PBF
Infineon Technologies

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,216
Logic Level Gate
30V
6.8A, 4.6A
27 mOhm @ 6.8A, 10V
2.3V @ 10µA
14nC @ 10V
398pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTLUD3191PZTBG
ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (1.6x1.6)
封裝: 6-UFDFN Exposed Pad
庫存3,520
Logic Level Gate
20V
1.1A
250 mOhm @ 1.5A, 4.5V
1V @ 250µA
3.5nC @ 4.5V
160pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
6-UDFN (1.6x1.6)
hot SI4952DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存473,688
Logic Level Gate
25V
8A
23 mOhm @ 7A, 10V
2.2V @ 250µA
18nC @ 10V
680pF @ 13V
2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTHD3100CT3
ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
封裝: 8-SMD, Flat Lead
庫存4,640
Logic Level Gate
20V
2.9A, 3.2A
80 mOhm @ 2.9A, 4.5V
1.2V @ 250µA
2.3nC @ 4.5V
165pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A/3.2A VS-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
封裝: 8-SMD, Flat Lead
庫存4,704
Logic Level Gate
30V
4A, 3.2A
50 mOhm @ 2A, 10V
2V @ 1mA
10nC @ 10V
470pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
BSL205NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 2.5A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存5,456
Logic Level Gate, 4.5V Drive
20V
2.5A
50 mOhm @ 2.5A, 4.5V
1.2V @ 11µA
3.2nC @ 4.5V
419pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
APTM50HM38FG
Microsemi Corporation

MOSFET 4N-CH 500V 90A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封裝: SP6
庫存2,592
Standard
500V
90A
45 mOhm @ 45A, 10V
5V @ 5mA
246nC @ 10V
11200pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
GWM180-004X2-SLSAM
IXYS

MOSFET 6N-CH 40V 180A 17-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
封裝: 17-SMD, Flat Leads
庫存4,688
Standard
40V
180A
2.5 mOhm @ 100A, 10V
4.5V @ 1mA
110nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Flat Leads
ISOPLUS-DIL?
TC8020K6-G-M937
Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

  • FET Type: 6 N and 6 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFQFN Exposed Pad
  • Supplier Device Package: 56-QFN (8x8)
封裝: 56-VFQFN Exposed Pad
庫存6,304
Standard
200V
-
8 Ohm @ 1A, 10V
2.4V @ 1mA
-
50pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
56-VFQFN Exposed Pad
56-QFN (8x8)
hot TD9944TG-G
Microchip Technology

MOSFET 2N-CH 240V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存5,440
Standard
240V
-
6 Ohm @ 500mA, 10V
2V @ 1mA
-
125pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI1967DH-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 1.3A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
封裝: 6-TSSOP, SC-88, SOT-363
庫存364,476
Logic Level Gate
20V
1.3A
490 mOhm @ 910mA, 4.5V
1V @ 250µA
4nC @ 8V
110pF @ 10V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
hot SI7272DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
  • Power - Max: 22W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封裝: PowerPAK? SO-8 Dual
庫存96,456
Logic Level Gate
30V
25A
9.3 mOhm @ 15A, 10V
2.5V @ 250µA
26nC @ 10V
1100pF @ 15V
22W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
ALD110904SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V
  • Vgs(th) (Max) @ Id: 420mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,360
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.4V
420mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
PMDPB56XNEAX
Nexperia USA Inc.

MOSFET ARRAY 2NCH 30V DFN2020D-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
  • Power - Max: 485mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
封裝: 6-UDFN Exposed Pad
庫存25,632
Standard
30V
3.1A (Ta)
72 mOhm @ 3.1A, 4.5V
1.25V @ 250µA
5nC @ 4.5V
256pF @ 15V
485mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020D-6
PMDXB550UNEZ
Nexperia USA Inc.

MOSFET 2N-CH 30V 0.59A 6DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 590mA
  • Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
  • Power - Max: 285mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
封裝: 6-XFDFN Exposed Pad
庫存39,966
Standard
30V
590mA
670 mOhm @ 590mA, 4.5V
950mV @ 250µA
1.05nC @ 4.5V
30.3pF @ 15V
285mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
2N7002PS,125
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 320mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 420mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
封裝: 6-TSSOP, SC-88, SOT-363
庫存43,296
Logic Level Gate
60V
320mA
1.6 Ohm @ 500mA, 10V
2.4V @ 250µA
0.8nC @ 4.5V
50pF @ 10V
420mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
ALD1106SBL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 14SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
封裝: 14-SOIC (0.154", 3.90mm Width)
庫存34,962
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
DMP31D1UVT-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封裝: -
Request a Quote
-
30V
760mA (Ta)
1Ohm @ 400mA, 4.5V
1.1V @ 250µA
1.6nC @ 8V
54pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
SIZ998BDT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
  • Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封裝: -
庫存53,151
-
30V
23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
2.2V @ 250µA
18nC @ 10V, 46.7nC @ 10V
790pF @ 15V, 2130pF @ 15V
3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
PJQ5846-AU_R2_000A1
Panjit International Inc.

MOSFET 2N-CH 40V 9.5A/40A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
  • Power - Max: 2W (Ta), 38.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
封裝: -
Request a Quote
-
40V
9.5A (Ta), 40A (Tc)
10.5mOhm @ 8A, 10V
2.5V @ 250µA
22nC @ 10V
1258pF @ 25V
2W (Ta), 38.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
TQM076NH04DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 15A/40A 8PDFNU

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
  • Power - Max: 55.6W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)
封裝: -
庫存14,985
-
40V
15A (Ta), 40A (Tc)
7.6mOhm @ 20A, 10V
3.6V @ 250µA
29nC @ 10V
1850pF @ 25V
55.6W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFNU (5x6)
HP8KB6TB1
Rohm Semiconductor

40V 24A, DUAL NCH+NCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
  • Power - Max: 3W (Ta), 21W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
封裝: -
庫存7,500
-
40V
10.5A (Ta), 24A (Tc)
15.7mOhm @ 10.5A, 10V
2.5V @ 1mA
10.6nC @ 10V
530pF @ 20V
3W (Ta), 21W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
FDMS1D2N03DSD
onsemi

MOSFET 2N-CH 30V 19A/70A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 117nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V, 4860pF @ 15V
  • Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PQFN (5x6)
封裝: -
Request a Quote
-
30V
19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
2.5V @ 320µA, 3V @ 1mA
33nC @ 10V, 117nC @ 10V
1410pF @ 15V, 4860pF @ 15V
2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PQFN (5x6)
DMN10H6D2LFDB-7
Diodes Incorporated

MOSFET 2N-CH 100V 0.27A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封裝: -
Request a Quote
-
100V
270mA (Ta)
6Ohm @ 190mA, 10V
2V @ 1mA
1.2nC @ 10V
41pF @ 50V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SQ4917CEY-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
  • Power - Max: 5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
庫存10,995
-
60V
8A (Tc)
48mOhm @ 4.3A, 10V
2.5V @ 250µA
65nC @ 10V
1910pF @ 30V
5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MCB40P1200LB-TRR
IXYS

SIC 2N-CH 1200V 58A 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 58A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封裝: -
Request a Quote
-
1200V (1.2kV)
58A
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
G180C06Y
Goford Semiconductor

MOSFET N/P-CH 60V 50A TO252-4

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA, 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, 62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2429pF @ 30V, 4471pF @ 30V
  • Power - Max: 69W (Tc), 115W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4
封裝: -
庫存5,889
-
60V
50A (Tc), 60A (Tc)
17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V
2V @ 250µA, 4V @ 250µA
39nC @ 4.5V, 62nC @ 4.5V
2429pF @ 30V, 4471pF @ 30V
69W (Tc), 115W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
TO-252-4
MMDF3N04HDR2
onsemi

MOSFET 2N-CH 40V 3.4A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
  • Power - Max: 1.39W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
Request a Quote
Logic Level Gate
40V
3.4A
80mOhm @ 3.4A, 10V
3V @ 250µA
28nC @ 10V
900pF @ 32V
1.39W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC