頁 158 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7751TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 4.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存31,176	Logic Level Gate	30V	4.5A	35 mOhm @ 4.5A, 10V	2.5V @ 250µA	44nC @ 10V	1464pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
EPC2103ENG	EPC	TRANS GAN 2N-CH 80V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存2,768	GaNFET (Gallium Nitride)	80V	23A	5.5 mOhm @ 20A, 5V	2.5V @ 7mA	6.5nC @ 5V	760pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
APTC60DSKM45CT1G	Microsemi Corporation	MOSFET 2N-CH 600V 49A SP1 FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封裝: SP1	庫存4,240	Super Junction	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
TPC8208(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 5A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	封裝: 8-SOIC (0.173", 4.40mm Width)	庫存19,932	Logic Level Gate	20V	5A	50 mOhm @ 2.5A, 4V	1.2V @ 200µA	9.5nC @ 5V	780pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
SI4914DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.5A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W, 1.16W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存856,104	Logic Level Gate	30V	5.5A, 5.7A	23 mOhm @ 7A, 10V	2.5V @ 250µA	8.5nC @ 4.5V	-	1.1W, 1.16W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SSD2007ASTF	Fairchild/ON Semiconductor	MOSFET 2N-CH 50V 2A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,672	Logic Level Gate	50V	2A	300 mOhm @ 1.5A, 10V	4V @ 250µA	15nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ZDM4206NTA	Diodes Incorporated	MOSFET 2N-CH 60V 1A SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Power - Max: 2.75W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SOT-223	封裝: SOT-223-8	庫存5,792	Logic Level Gate	60V	1A	1 Ohm @ 1.5A, 10V	3V @ 1mA	-	100pF @ 25V	2.75W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SOT-223
VMM90-09F	IXYS	MOSFET 2N-CH 900V 85A Y3-LI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 85A Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V Vgs(th) (Max) @ Id: 5V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	封裝: Y3-Li	庫存3,792	Standard	900V	85A	76 mOhm @ 65A, 10V	5V @ 30mA	960nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
APTM100H35FTG	Microsemi Corporation	MOSFET 4N-CH 1000V 22A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封裝: SP4	庫存6,048	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
NVMFD5853NT1G	ON Semiconductor	MOSFET 2N-CH 40V 12A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V Power - Max: 3.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封裝: 8-PowerTDFN	庫存2,048	Logic Level Gate	40V	12A	10 mOhm @ 15A, 10V	4V @ 250µA	24nC @ 10V	1225pF @ 25V	3.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMD6P02R2G	ON Semiconductor	MOSFET 2P-CH 20V 4.8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V Power - Max: 750mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,376	Logic Level Gate	20V	4.8A	33 mOhm @ 6.2A, 4.5V	1.2V @ 250µA	35nC @ 4.5V	1700pF @ 16V	750mW	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMG6301UDW-13	Diodes Incorporated	MOSFET 2N-CH 25V 0.24A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 240mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存4,592	Standard	25V	240mA	4 Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.36nC @ 4.5V	27.9pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
IRF7301TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 5.2A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,496	Logic Level Gate	20V	5.2A	50 mOhm @ 2.6A, 4.5V	700mV @ 250µA	20nC @ 4.5V	660pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
VT6J1T2CR	Rohm Semiconductor	MOSFET 2P-CH 20V 0.1A VMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	封裝: 6-SMD, Flat Leads	庫存2,944	Logic Level Gate, 1.2V Drive	20V	100mA	3.8 Ohm @ 100mA, 4.5V	1V @ 100µA	-	15pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	VMT6
HS8K11TB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A/11A HSML FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 11A Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: HSML3030L10	封裝: 8-UDFN Exposed Pad	庫存29,604	Logic Level Gate	30V	7A, 11A	17.9 mOhm @ 7A, 10V	2.5V @ 1mA	11.1nC @ 10V	500pF @ 15V	2W	150°C (TJ)	Surface Mount	8-UDFN Exposed Pad	HSML3030L10
DMC2020USD-13	Diodes Incorporated	MOSFET N/P-CH 20V 7.8A/6.3A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.8A, 6.3A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存830,028	Logic Level Gate	20V	7.8A, 6.3A	20 mOhm @ 7A, 4.5V	1.5V @ 250µA	11.6nC @ 4.5V	1149pF @ 10V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDPC8012S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 13A/26A PWR CLP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Power - Max: 800mW, 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33	封裝: 8-PowerWDFN	庫存28,608	Logic Level Gate	25V	13A, 26A	7 mOhm @ 12A, 4.5V	2.2V @ 250µA	8nC @ 4.5V	1075pF @ 13V	800mW, 900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Powerclip-33
FDMA3027PZ-F130	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	封裝: -	Request a Quote	-	-	-	-	-	-	-	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
SK2S240-45	SMC Diode Solutions	45V, 240A, SOT-227, POWER MODULE FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存108	-	-	-	-	-	-	-	-	-	-	-	-
NVMJD016N06CTWG	onsemi	MOSFET N-CH 60V LFPAK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM170TLM11CAG	Microchip Technology	SIC 4N-CH 1700V 238A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Power - Max: 1114W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	封裝: -	庫存15	-	1700V (1.7kV)	238A (Tc)	11.3mOhm @ 120A, 20V	3.2V @ 10mA	712nC @ 20V	13200pF @ 1000V	1114W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
AON6984	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 19A/50A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V, 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V, 2120pF @ 15V Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-DFN (5x6)	封裝: -	Request a Quote	-	30V	19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc)	5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V	2.2V @ 250µA, 1.9V @ 250µA	12.8nC @ 10V, 37nC @ 10V	810pF @ 15V, 2120pF @ 15V	3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-DFN (5x6)
CAB006A12GM3T	Wolfspeed, Inc.	SIC 2N-CH 1200V 200A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	Request a Quote	-	1200V (1.2kV)	200A (Tj)	6.9mOhm @ 200A, 15V	3.6V @ 69mA	708nC @ 15V	20400pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
DMN12M3UCA6-7	Diodes Incorporated	MOSFET 2N-CH 14V X4-DSN3118-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 14V Current - Continuous Drain (Id) @ 25°C: 24.4A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.41mA Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 4593pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X4-DSN3118-6	封裝: -	Request a Quote	-	14V	24.4A (Ta)	2.75mOhm @ 6A, 4.5V	1.4V @ 1.41mA	68.6nC @ 4V	4593pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X4-DSN3118-6
GCMX080A120B2H1P	SemiQ	SIC 1200V 80M MOSFET FULL-BRIDGE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V Power - Max: 119W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存90	-	1200V (1.2kV)	27A (Tc)	100mOhm @ 20A, 20V	4V @ 10mA	56nC @ 20V	1362pF @ 800V	119W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70AM07T3AG	Microchip Technology	SIC 2N-CH 700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 988W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存18	-	700V	353A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	988W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM50T1AG	Microchip Technology	SIC 2N-CH 1200V 55A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SIZ980DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 20A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V Power - Max: 20W, 66W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	封裝: -	庫存21,444	-	30V	20A (Tc), 60A (Tc)	6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V	2.2V @ 250µA	8.1nC @ 4.5V, 35nC @ 4.5V	930pF @ 15V, 4600pF @ 15V	20W, 66W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)

IRF7751TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存31,176

Logic Level Gate

30V

4.5A

35 mOhm @ 4.5A, 10V

2.5V @ 250µA

44nC @ 10V

1464pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

EPC2103ENG

EPC

TRANS GAN 2N-CH 80V BUMPED DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存2,768

GaNFET (Gallium Nitride)

80V

23A

5.5 mOhm @ 20A, 5V

2.5V @ 7mA

6.5nC @ 5V

760pF @ 40V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

APTC60DSKM45CT1G

Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封裝: SP1

庫存4,240

Super Junction

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

TPC8208(TE12L,Q,M)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 5A SOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Power - Max: 450mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)

封裝: 8-SOIC (0.173", 4.40mm Width)

庫存19,932

Logic Level Gate

20V

5A

50 mOhm @ 2.5A, 4V

1.2V @ 200µA

9.5nC @ 5V

780pF @ 10V

450mW

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP (5.5x6.0)

SI4914DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.5A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W, 1.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存856,104

Logic Level Gate

30V

5.5A, 5.7A

23 mOhm @ 7A, 10V

2.5V @ 250µA

8.5nC @ 4.5V

-

1.1W, 1.16W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SSD2007ASTF

Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 2A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,672

Logic Level Gate

50V

2A

300 mOhm @ 1.5A, 10V

4V @ 250µA

15nC @ 10V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ZDM4206NTA

Diodes Incorporated

MOSFET 2N-CH 60V 1A SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Power - Max: 2.75W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223

封裝: SOT-223-8

庫存5,792

Logic Level Gate

60V

1A

1 Ohm @ 1.5A, 10V

3V @ 1mA

-

100pF @ 25V

2.75W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SOT-223

VMM90-09F

IXYS

MOSFET 2N-CH 900V 85A Y3-LI

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 85A
Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V
Vgs(th) (Max) @ Id: 5V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li

封裝: Y3-Li

庫存3,792

Standard

900V

85A

76 mOhm @ 65A, 10V

5V @ 30mA

960nC @ 10V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Y3-Li

APTM100H35FTG

Microsemi Corporation

MOSFET 4N-CH 1000V 22A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封裝: SP4

庫存6,048

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

NVMFD5853NT1G

ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封裝: 8-PowerTDFN

庫存2,048

Logic Level Gate

40V

12A

10 mOhm @ 15A, 10V

4V @ 250µA

24nC @ 10V

1225pF @ 25V

3.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

NVMD6P02R2G

ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
Power - Max: 750mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,376

Logic Level Gate

20V

4.8A

33 mOhm @ 6.2A, 4.5V

1.2V @ 250µA

35nC @ 4.5V

1700pF @ 16V

750mW

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMG6301UDW-13

Diodes Incorporated

MOSFET 2N-CH 25V 0.24A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存4,592

Standard

25V

240mA

4 Ohm @ 400mA, 4.5V

1.5V @ 250µA

0.36nC @ 4.5V

27.9pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

IRF7301TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 5.2A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,496

Logic Level Gate

20V

5.2A

50 mOhm @ 2.6A, 4.5V

700mV @ 250µA

20nC @ 4.5V

660pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

VT6J1T2CR

Rohm Semiconductor

MOSFET 2P-CH 20V 0.1A VMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: VMT6

封裝: 6-SMD, Flat Leads

庫存2,944

Logic Level Gate, 1.2V Drive

20V

100mA

3.8 Ohm @ 100mA, 4.5V

1V @ 100µA

-

15pF @ 10V

120mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

VMT6

HS8K11TB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A/11A HSML

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: HSML3030L10

封裝: 8-UDFN Exposed Pad

庫存29,604

Logic Level Gate

30V

7A, 11A

17.9 mOhm @ 7A, 10V

2.5V @ 1mA

11.1nC @ 10V

500pF @ 15V

2W

150°C (TJ)

Surface Mount

8-UDFN Exposed Pad

HSML3030L10

DMC2020USD-13

Diodes Incorporated

MOSFET N/P-CH 20V 7.8A/6.3A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 6.3A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存830,028

Logic Level Gate

20V

7.8A, 6.3A

20 mOhm @ 7A, 4.5V

1.5V @ 250µA

11.6nC @ 4.5V

1149pF @ 10V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDPC8012S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 13A/26A PWR CLP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Power - Max: 800mW, 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Powerclip-33

封裝: 8-PowerWDFN

庫存28,608

Logic Level Gate

25V

13A, 26A

7 mOhm @ 12A, 4.5V

2.2V @ 250µA

8nC @ 4.5V

1075pF @ 13V

800mW, 900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Powerclip-33

FDMA3027PZ-F130

onsemi

SMALL SIGNAL N-CHANNEL MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

封裝: -

Request a Quote

-

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

SK2S240-45

SMC Diode Solutions

45V, 240A, SOT-227, POWER MODULE

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存108

-

NVMJD016N06CTWG

onsemi

MOSFET N-CH 60V LFPAK56

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MSCSM170TLM11CAG

Microchip Technology

SIC 4N-CH 1700V 238A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Power - Max: 1114W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

封裝: -

庫存15

-

1700V (1.7kV)

238A (Tc)

11.3mOhm @ 120A, 20V

3.2V @ 10mA

712nC @ 20V

13200pF @ 1000V

1114W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C

AON6984

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 19A/50A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V, 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V, 2120pF @ 15V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-DFN (5x6)

封裝: -

Request a Quote

-

30V

19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc)

5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V

2.2V @ 250µA, 1.9V @ 250µA

12.8nC @ 10V, 37nC @ 10V

810pF @ 15V, 2120pF @ 15V

3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-DFN (5x6)

CAB006A12GM3T

Wolfspeed, Inc.

SIC 2N-CH 1200V 200A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

Request a Quote

-

1200V (1.2kV)

200A (Tj)

6.9mOhm @ 200A, 15V

3.6V @ 69mA

708nC @ 15V

20400pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

DMN12M3UCA6-7

Diodes Incorporated

MOSFET 2N-CH 14V X4-DSN3118-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 14V
Current - Continuous Drain (Id) @ 25°C: 24.4A (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.41mA
Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 4593pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X4-DSN3118-6

封裝: -

Request a Quote

-

14V

24.4A (Ta)

2.75mOhm @ 6A, 4.5V

1.4V @ 1.41mA

68.6nC @ 4V

4593pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X4-DSN3118-6

GCMX080A120B2H1P

SemiQ

SIC 1200V 80M MOSFET FULL-BRIDGE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Power - Max: 119W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存90

-

1200V (1.2kV)

27A (Tc)

100mOhm @ 20A, 20V

4V @ 10mA

56nC @ 20V

1362pF @ 800V

119W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70AM07T3AG

Microchip Technology

SIC 2N-CH 700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Power - Max: 988W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存18

-

700V

353A (Tc)

6.4mOhm @ 120A, 20V

2.4V @ 12mA

645nC @ 20V

13500pF @ 700V

988W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM50T1AG

Microchip Technology

SIC 2N-CH 1200V 55A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

Request a Quote

-

1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 1mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SIZ980DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Power - Max: 20W, 66W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

封裝: -

庫存21,444

-

30V

20A (Tc), 60A (Tc)

6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V

2.2V @ 250µA

8.1nC @ 4.5V, 35nC @ 4.5V

930pF @ 15V, 4600pF @ 15V

20W, 66W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)