頁 151 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL215PL6327HTSA1	Infineon Technologies	MOSFET 2P-CH 20V 1.5A TSOP-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存2,544	Logic Level Gate	20V	1.5A	150 mOhm @ 1.5A, 4.5V	1.2V @ 11µA	3.55nC @ 4.5V	346pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
SI9936BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,416	Logic Level Gate	30V	4.5A	35 mOhm @ 6A, 10V	3V @ 250µA	13nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
GWM160-0055X1-SMD	IXYS	MOSFET 6N-CH 55V 150A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	封裝: 17-SMD, Gull Wing	庫存2,528	Standard	55V	150A	3.3 mOhm @ 100A, 10V	4.5V @ 1mA	105nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
NTMD2P01R2	ON Semiconductor	MOSFET 2P-CH 16V 2.3A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,856	Logic Level Gate	16V	2.3A	100 mOhm @ 2.4A, 4.5V	1.5V @ 250µA	18nC @ 4.5V	750pF @ 16V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
XP0487800L	Panasonic Electronic Components	MOSFET 2N-CH 50V 0.1A S-MINI-6P FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	封裝: 6-TSSOP, SC-88, SOT-363	庫存52,344	Logic Level Gate	50V	100mA	12 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SMINI6-G1
SQJB70EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V POWERPAK SO-8L FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封裝: PowerPAK? SO-8 Dual	庫存5,088	Standard	100V	11.3A (Tc)	95 mOhm @ 4A, 10V	3.5V @ 250µA	7nC @ 10V	220pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
APTM10AM02FG	Microsemi Corporation	MOSFET 2N-CH 100V 495A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 495A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封裝: SP6	庫存4,144	Standard	100V	495A	2.5 mOhm @ 200A, 10V	4V @ 10mA	1360nC @ 10V	40000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
SQJB60EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 60V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封裝: PowerPAK? SO-8 Dual	庫存3,536	Standard	60V	30A (Tc)	12 mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1600pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMN3035LWN-7	Diodes Incorporated	MOSFET 2N-CH 30V 5.5A 8VDFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V Power - Max: 770mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: V-DFN3020-8	封裝: 8-PowerVDFN	庫存3,296	Standard	30V	5.5A	35 mOhm @ 4.8A, 10V	2V @ 250µA	9.9nC @ 10V	399pF @ 15V	770mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	V-DFN3020-8
QS8J11TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 3.5A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: 8-SMD, Flat Lead	庫存3,776	Logic Level Gate, 1.5V Drive	12V	3.5A	43 mOhm @ 3.5A, 4.5V	1V @ 1mA	22nC @ 4.5V	2600pF @ 6V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SI7922DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封裝: PowerPAK? 1212-8 Dual	庫存406,368	Logic Level Gate	100V	1.8A	195 mOhm @ 2.5A, 10V	3.5V @ 250µA	8nC @ 10V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
ZXMN6A11DN8TA	Diodes Incorporated	MOSFET 2N-CH 60V 2.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存884,352	Logic Level Gate	60V	2.5A	120 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	5.7nC @ 10V	330pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6N44FE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封裝: SOT-563, SOT-666	庫存95,874	Logic Level Gate	30V	100mA	4 Ohm @ 10mA, 4V	1.5V @ 100µA	-	8.5pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
ZXMHC3A01N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 30V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.17A, 1.64A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,584	Logic Level Gate	30V	2.17A, 1.64A	125 mOhm @ 2.5A, 10V	3V @ 250µA	3.9nC @ 10V	190pF @ 25V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMA3023PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 2.9A MICROFET6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	封裝: 6-VDFN Exposed Pad	庫存145,692	Logic Level Gate	30V	2.9A	90 mOhm @ 2.9A, 4.5V	1V @ 250µA	11nC @ 4.5V	530pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
MSCSM120DUM16T3AG	Microchip Technology	SIC 2N-CH 1200V 173A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
BSC072N04LDATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 20V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封裝: -	庫存41,562	Logic Level Gate	40V	20A (Tc)	7.2mOhm @ 17A, 10V	2.2V @ 30µA	52nC @ 10V	3990pF @ 20V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
DMN2014LHAB-13	Diodes Incorporated	MOSFET 2N-CH 20V 9A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	封裝: -	庫存30,000	-	20V	9A (Ta)	13mOhm @ 4A, 4.5V	1.1V @ 250µA	16nC @ 4.5V	1550pF @ 10V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
KFCAB21520L	Nuvoton Technology Corporation	DUAL NCH MOSFET 12, 16A, 1.6MOHM FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.64mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V Power - Max: 540mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-SMD	封裝: -	Request a Quote	-	12V	16A (Ta)	2mOhm @ 8A, 4.5V	1.4V @ 1.64mA	38nC @ 4V	5250pF @ 10V	540mW (Ta)	150°C	Surface Mount	10-SMD, No Lead	10-SMD
2N7002BKSH	Nexperia USA Inc.	2N7002BKS/SOT363/SC-88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 295mW (Ta), 1.04W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: -	Request a Quote	Logic Level Gate	60V	300mA (Ta)	1.6Ohm @ 500mA, 10V	2.1V @ 250µA	0.6nC @ 4.5V	50pF @ 10V	295mW (Ta), 1.04W (Tc)	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
MSCSM170TLM15CAG	Microchip Technology	SIC 4N-CH 1700V 179A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Power - Max: 843W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	封裝: -	庫存15	-	1700V (1.7kV)	179A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	843W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
DMG4800LSDQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 7.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Power - Max: 1.17W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存6,288	-	30V	7.5A (Ta)	16mOhm @ 9A, 10V	1.6V @ 250µA	8.56nC @ 5V	798pF @ 10V	1.17W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HP8K24TB	Rohm Semiconductor	MOSFET 2N-CH 30V 15A/27A 8HSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V Power - Max: 3W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封裝: -	庫存28,368	-	30V	15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)	8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V	2.5V @ 1mA	10nC @ 10V, 36nC @ 10V	590pF @ 15V, 2410pF @ 15V	3W (Ta)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
VEC2415-TL-EX	onsemi	MOSFET 2N-CH 60V 3A VEC8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	封裝: -	Request a Quote	-	60V	3A (Ta)	80mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
NVMFD6H840NLWFT1G	onsemi	MOSFET 2N-CH 80V 14A/74A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 96µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封裝: -	Request a Quote	-	80V	14A (Ta), 74A (Tc)	6.9mOhm @ 20A, 10V	2V @ 96µA	32nC @ 10V	2002pF @ 40V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
KFC4B21210L	Nuvoton Technology Corporation	MOSFET 12V 4.7A 4CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 2.3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 10V Power - Max: 370mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-XFLGA, CSP Supplier Device Package: 4-CSP (1.29x1.29)	封裝: -	Request a Quote	-	12V	4.7A (Ta)	14.5mOhm @ 2.3A, 4.5V	1.4V @ 310µA	9.4nC @ 4V	1140pF @ 10V	370mW (Ta)	150°C	Surface Mount	4-XFLGA, CSP	4-CSP (1.29x1.29)
SQ4940AEY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存37,578	-	40V	8A (Tc)	24mOhm @ 5.3A, 10V	2.5V @ 250µA	43nC @ 10V	741pF @ 20V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC2710UDWQ-13	Diodes Incorporated	MOSFET N/P-CH 20V 0.75A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	-	20V	750mA (Ta), 600mA (Ta)	450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

BSL215PL6327HTSA1

Infineon Technologies

MOSFET 2P-CH 20V 1.5A TSOP-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存2,544

Logic Level Gate

20V

1.5A

150 mOhm @ 1.5A, 4.5V

1.2V @ 11µA

3.55nC @ 4.5V

346pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

SI9936BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,416

Logic Level Gate

30V

4.5A

35 mOhm @ 6A, 10V

3V @ 250µA

13nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

GWM160-0055X1-SMD

IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

封裝: 17-SMD, Gull Wing

庫存2,528

Standard

55V

150A

3.3 mOhm @ 100A, 10V

4.5V @ 1mA

105nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

NTMD2P01R2

ON Semiconductor

MOSFET 2P-CH 16V 2.3A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,856

Logic Level Gate

16V

2.3A

100 mOhm @ 2.4A, 4.5V

1.5V @ 250µA

18nC @ 4.5V

750pF @ 16V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

XP0487800L

Panasonic Electronic Components

MOSFET 2N-CH 50V 0.1A S-MINI-6P

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1

封裝: 6-TSSOP, SC-88, SOT-363

庫存52,344

Logic Level Gate

50V

100mA

12 Ohm @ 10mA, 4V

1.5V @ 1µA

-

12pF @ 3V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SMINI6-G1

SQJB70EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 100V POWERPAK SO-8L

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封裝: PowerPAK? SO-8 Dual

庫存5,088

Standard

100V

11.3A (Tc)

95 mOhm @ 4A, 10V

3.5V @ 250µA

7nC @ 10V

220pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

APTM10AM02FG

Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封裝: SP6

庫存4,144

Standard

100V

495A

2.5 mOhm @ 200A, 10V

4V @ 10mA

1360nC @ 10V

40000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SQJB60EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 60V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封裝: PowerPAK? SO-8 Dual

庫存3,536

Standard

60V

30A (Tc)

12 mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1600pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

DMN3035LWN-7

Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 8VDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Power - Max: 770mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: V-DFN3020-8

封裝: 8-PowerVDFN

庫存3,296

Standard

30V

5.5A

35 mOhm @ 4.8A, 10V

2V @ 250µA

9.9nC @ 10V

399pF @ 15V

770mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

V-DFN3020-8

QS8J11TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Power - Max: 550mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: 8-SMD, Flat Lead

庫存3,776

Logic Level Gate, 1.5V Drive

12V

3.5A

43 mOhm @ 3.5A, 4.5V

1V @ 1mA

22nC @ 4.5V

2600pF @ 6V

550mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SI7922DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 100V 1.8A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封裝: PowerPAK? 1212-8 Dual

庫存406,368

Logic Level Gate

100V

1.8A

195 mOhm @ 2.5A, 10V

3.5V @ 250µA

8nC @ 10V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

ZXMN6A11DN8TA

Diodes Incorporated

MOSFET 2N-CH 60V 2.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存884,352

Logic Level Gate

60V

2.5A

120 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

5.7nC @ 10V

330pF @ 40V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SSM6N44FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

封裝: SOT-563, SOT-666

庫存95,874

Logic Level Gate

30V

100mA

4 Ohm @ 10mA, 4V

1.5V @ 100µA

-

8.5pF @ 3V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

ZXMHC3A01N8TC

Diodes Incorporated

MOSFET 2N/2P-CH 30V 8-SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.17A, 1.64A
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Power - Max: 870mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,584

Logic Level Gate

30V

2.17A, 1.64A

125 mOhm @ 2.5A, 10V

3V @ 250µA

3.9nC @ 10V

190pF @ 25V

870mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDMA3023PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 2.9A MICROFET6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

封裝: 6-VDFN Exposed Pad

庫存145,692

Logic Level Gate

30V

2.9A

90 mOhm @ 2.9A, 4.5V

1V @ 250µA

11nC @ 4.5V

530pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

MSCSM120DUM16T3AG

Microchip Technology

SIC 2N-CH 1200V 173A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

Request a Quote

-

1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-55°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

BSC072N04LDATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 20V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封裝: -

庫存41,562

Logic Level Gate

40V

20A (Tc)

7.2mOhm @ 17A, 10V

2.2V @ 30µA

52nC @ 10V

3990pF @ 20V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

DMN2014LHAB-13

Diodes Incorporated

MOSFET 2N-CH 20V 9A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

封裝: -

庫存30,000

-

20V

9A (Ta)

13mOhm @ 4A, 4.5V

1.1V @ 250µA

16nC @ 4.5V

1550pF @ 10V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

KFCAB21520L

Nuvoton Technology Corporation

DUAL NCH MOSFET 12, 16A, 1.6MOHM

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.64mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V
Power - Max: 540mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-SMD

封裝: -

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-

12V

16A (Ta)

2mOhm @ 8A, 4.5V

1.4V @ 1.64mA

38nC @ 4V

5250pF @ 10V

540mW (Ta)

150°C

Surface Mount

10-SMD, No Lead

10-SMD

2N7002BKSH

Nexperia USA Inc.

2N7002BKS/SOT363/SC-88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 295mW (Ta), 1.04W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: -

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Logic Level Gate

60V

300mA (Ta)

1.6Ohm @ 500mA, 10V

2.1V @ 250µA

0.6nC @ 4.5V

50pF @ 10V

295mW (Ta), 1.04W (Tc)

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

MSCSM170TLM15CAG

Microchip Technology

SIC 4N-CH 1700V 179A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Power - Max: 843W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

封裝: -

庫存15

-

1700V (1.7kV)

179A (Tc)

15mOhm @ 90A, 20V

3.2V @ 7.5mA

534nC @ 20V

9900pF @ 1000V

843W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C

DMG4800LSDQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 7.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Power - Max: 1.17W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存6,288

-

30V

7.5A (Ta)

16mOhm @ 9A, 10V

1.6V @ 250µA

8.56nC @ 5V

798pF @ 10V

1.17W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

HP8K24TB

Rohm Semiconductor

MOSFET 2N-CH 30V 15A/27A 8HSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V
Power - Max: 3W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封裝: -

庫存28,368

-

30V

15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)

8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V

2.5V @ 1mA

10nC @ 10V, 36nC @ 10V

590pF @ 15V, 2410pF @ 15V

3W (Ta)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

VEC2415-TL-EX

onsemi

MOSFET 2N-CH 60V 3A VEC8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

封裝: -

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-

60V

3A (Ta)

80mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

NVMFD6H840NLWFT1G

onsemi

MOSFET 2N-CH 80V 14A/74A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封裝: -

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-

80V

14A (Ta), 74A (Tc)

6.9mOhm @ 20A, 10V

2V @ 96µA

32nC @ 10V

2002pF @ 40V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

KFC4B21210L

Nuvoton Technology Corporation

MOSFET 12V 4.7A 4CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 10V
Power - Max: 370mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-XFLGA, CSP
Supplier Device Package: 4-CSP (1.29x1.29)

封裝: -

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-

12V

4.7A (Ta)

14.5mOhm @ 2.3A, 4.5V

1.4V @ 310µA

9.4nC @ 4V

1140pF @ 10V

370mW (Ta)

150°C

Surface Mount

4-XFLGA, CSP

4-CSP (1.29x1.29)

SQ4940AEY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存37,578

-

40V

8A (Tc)

24mOhm @ 5.3A, 10V

2.5V @ 250µA

43nC @ 10V

741pF @ 20V

4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC2710UDWQ-13

Diodes Incorporated

MOSFET N/P-CH 20V 0.75A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

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-

20V

750mA (Ta), 600mA (Ta)

450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V, 0.7nC @ 4.5V

42pF @ 16V, 49pF @ 16V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363