頁 142 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
RJM0306JSP-01#J0	Renesas Electronics America	MOSFET 2N/2P-CH 30V 3.5A 8-SOP FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 2.2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,192	Logic Level Gate, 4V Drive	30V	3.5A	65 mOhm @ 2A, 10V	-	5nC @ 10V	290pF @ 10V	2.2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AO6801E	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 2A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封裝: SC-74, SOT-457	庫存120,012	Logic Level Gate	30V	2A	110 mOhm @ 2A, 10V	1.5V @ 250µA	12nC @ 10V	305pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI5935DC-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 3A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封裝: 8-SMD, Flat Lead	庫存36,000	Logic Level Gate	20V	3A	86 mOhm @ 3A, 4.5V	1V @ 250µA	8.5nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI1563EDH-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封裝: 6-TSSOP, SC-88, SOT-363	庫存36,120	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	1nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI1563DH-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封裝: 6-TSSOP, SC-88, SOT-363	庫存259,200	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	2nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
FDG6302P	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.14A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 140mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封裝: 6-TSSOP, SC-88, SOT-363	庫存450,276	Logic Level Gate	25V	140mA	10 Ohm @ 140mA, 4.5V	1.5V @ 250µA	0.31nC @ 4.5V	12pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SIZ902DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Power - Max: 29W, 66W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair?	封裝: 8-PowerWDFN	庫存137,400	Logic Level Gate	30V	16A	12 mOhm @ 13.8A, 10V	2.2V @ 250µA	21nC @ 10V	790pF @ 15V	29W, 66W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair?
SQJ990EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 100V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	封裝: PowerPAK? SO-8 Dual	庫存7,200	Standard	100V	34A (Tc)	40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V, 15nC @ 10V	1390pF @ 25V, 650pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
EPC2100ENGRT	EPC	MOSFET ARRAY 2N-CH 30V DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tj), 38A (Tj) Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V, 15nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V, 1700pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存51,732	GaNFET (Gallium Nitride)	30V	9.5A (Tj), 38A (Tj)	8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V	2.5V @ 4mA, 2.5V @ 16mA	3.5nC @ 15V, 15nC @ 15V	380pF @ 15V, 1700pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
MCH6661-TL-W	ON Semiconductor	MOSFET 2N-CH 30V 1.8A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SC-88FL/ MCPH6	封裝: 6-SMD, Flat Leads	庫存21,666	Logic Level Gate, 4V Drive	30V	1.8A	188 mOhm @ 900mA, 10V	2.6V @ 1mA	2nC @ 10V	88pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	SC-88FL/ MCPH6
CMLDM7003T TR	Central Semiconductor Corp	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存26,004	Standard	50V	280mA	1.5 Ohm @ 50mA, 5V	1.2V @ 250µA	0.76nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDS8935	Fairchild/ON Semiconductor	MOSFET 2P-CH 80V 2.1A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 183 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存21,516	Logic Level Gate	80V	2.1A	183 mOhm @ 2.1A, 10V	3V @ 250µA	19nC @ 10V	879pF @ 40V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FW261-TL-E	onsemi	NCH+NCH 4V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
HUFA75321D3STQ	Fairchild Semiconductor	MOSFET N-CH 55V 20A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SSM6N44FU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存43,383	-	30V	100mA (Ta)	4Ohm @ 10mA, 4V	1.5V @ 100µA	-	8.5pF @ 3V	200mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
F445MR12W1M1B76BPSA1	Infineon Technologies	SIC 4N-CH 1200V 25A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	封裝: -	Request a Quote	-	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
HAT2218R0T-EL-E	Renesas	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCACD20N10YHE3-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V Power - Max: 50W (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PDFN5060-8D	封裝: -	Request a Quote	-	100V	20A (Tc)	22mOhm @ 20A, 10V	2.5V @ 250µA	17nC @ 10V	1240pF @ 25V	50W (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PDFN5060-8D
DF14MR12W1M1HFB67BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	封裝: -	庫存72	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
HUF76113DK8T	Fairchild Semiconductor	MOSFET 2N-CH 30V 6A US8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 25V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	封裝: -	Request a Quote	Logic Level Gate	30V	6A (Ta)	32mOhm @ 6A, 10V	3V @ 250µA	19.2nC @ 10V	605pF @ 25V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-VFSOP (0.091", 2.30mm Width)	US8
CAS110M12BM2	Wolfspeed, Inc.	SIC 1200V 110A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 110A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	110A	-	-	-	-	-	-	Chassis Mount	Module	-
SSF2219Y	Good-Ark Semiconductor	MOSFET 2P-CH 20V 0.4A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 312mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	庫存18,000	-	20V	400mA (Tc)	600mOhm @ 300mA, 4.5V	1V @ 250µA	2nC @ 4.5V	78pF @ 10V	312mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FF6MR12W2M1HB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 145A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 145A (Tj) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 150A, 18V Vgs(th) (Max) @ Id: 5.15V @ 60mA Gate Charge (Qg) (Max) @ Vgs: 446nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	庫存87	-	1200V (1.2kV)	145A (Tj)	5.4mOhm @ 150A, 18V	5.15V @ 60mA	446nC @ 18V	13200pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
GCMX020A120B2H1P	SemiQ	SIC 1200V 20M MOSFET FULL-BRIDGE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V Power - Max: 333W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存30	-	1200V (1.2kV)	102A (Tc)	28mOhm @ 50A, 20V	4V @ 20mA	222nC @ 20V	5600pF @ 800V	333W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SI1539CDL-T1-BE3	Vishay Siliconix	MOSFET N/P-CH 30V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V Power - Max: 290mW (Ta), 340mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封裝: -	Request a Quote	-	30V	700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)	388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V	2.5V @ 250µA	1.5nC @ 10V, 3nC @ 10V	28pF @ 15V, 34pF @ 15V	290mW (Ta), 340mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMC10H220LSD-13	Diodes Incorporated	MOSFET N/P-CH 100V 1.7A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V, 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V, 1030pF @ 50V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: -	Request a Quote	-	100V	1.7A (Ta)	220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V	3V @ 250µA	8.3nC @ 10V, 17.5nC @ 10V	340pF @ 50V, 1030pF @ 50V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UPA603T-T2-A	Renesas Electronics Corporation	MOSFET 2P-CH 50V 0.1A SC59 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-59-6 Supplier Device Package: SC-59	封裝: -	Request a Quote	-	50V	100mA	60Ohm @ 10mA, 10V	2.5V @ 1µA	-	17pF @ 5V	300mW	150°C (TJ)	Surface Mount	SC-59-6	SC-59
PJQ1820_R1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 0.8A 6DFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Supplier Device Package: DFN1010-6L	封裝: -	Request a Quote	-	20V	800mA (Ta)	300mOhm @ 500mA, 4.5V	1V @ 250µA	1.1nC @ 4.5V	46pF @ 10V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN	DFN1010-6L

RJM0306JSP-01#J0

Renesas Electronics America

MOSFET 2N/2P-CH 30V 3.5A 8-SOP

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Power - Max: 2.2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,192

Logic Level Gate, 4V Drive

30V

3.5A

65 mOhm @ 2A, 10V

-

5nC @ 10V

290pF @ 10V

2.2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AO6801E

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 2A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封裝: SC-74, SOT-457

庫存120,012

Logic Level Gate

30V

2A

110 mOhm @ 2A, 10V

1.5V @ 250µA

12nC @ 10V

305pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI5935DC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 3A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封裝: 8-SMD, Flat Lead

庫存36,000

Logic Level Gate

20V

3A

86 mOhm @ 3A, 4.5V

1V @ 250µA

8.5nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI1563EDH-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封裝: 6-TSSOP, SC-88, SOT-363

庫存36,120

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

1nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI1563DH-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封裝: 6-TSSOP, SC-88, SOT-363

庫存259,200

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

2nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

FDG6302P

Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.14A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 140mA
Rds On (Max) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封裝: 6-TSSOP, SC-88, SOT-363

庫存450,276

Logic Level Gate

25V

140mA

10 Ohm @ 140mA, 4.5V

1.5V @ 250µA

0.31nC @ 4.5V

12pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SIZ902DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Power - Max: 29W, 66W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair?

封裝: 8-PowerWDFN

庫存137,400

Logic Level Gate

30V

16A

12 mOhm @ 13.8A, 10V

2.2V @ 250µA

21nC @ 10V

790pF @ 15V

29W, 66W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair?

SQJ990EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 100V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

封裝: PowerPAK? SO-8 Dual

庫存7,200

Standard

100V

34A (Tc)

40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V, 15nC @ 10V

1390pF @ 25V, 650pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

EPC2100ENGRT

EPC

MOSFET ARRAY 2N-CH 30V DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tj), 38A (Tj)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V, 15nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V, 1700pF @ 15V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存51,732

GaNFET (Gallium Nitride)

30V

9.5A (Tj), 38A (Tj)

8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V

2.5V @ 4mA, 2.5V @ 16mA

3.5nC @ 15V, 15nC @ 15V

380pF @ 15V, 1700pF @ 15V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

MCH6661-TL-W

ON Semiconductor

MOSFET 2N-CH 30V 1.8A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SC-88FL/ MCPH6

封裝: 6-SMD, Flat Leads

庫存21,666

Logic Level Gate, 4V Drive

30V

1.8A

188 mOhm @ 900mA, 10V

2.6V @ 1mA

2nC @ 10V

88pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

SC-88FL/ MCPH6

CMLDM7003T TR

Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存26,004

Standard

50V

280mA

1.5 Ohm @ 50mA, 5V

1.2V @ 250µA

0.76nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDS8935

Fairchild/ON Semiconductor

MOSFET 2P-CH 80V 2.1A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 183 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存21,516

Logic Level Gate

80V

2.1A

183 mOhm @ 2.1A, 10V

3V @ 250µA

19nC @ 10V

879pF @ 40V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FW261-TL-E

onsemi

NCH+NCH 4V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

HUFA75321D3STQ

Fairchild Semiconductor

MOSFET N-CH 55V 20A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

SSM6N44FU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存43,383

-

30V

100mA (Ta)

4Ohm @ 10mA, 4V

1.5V @ 100µA

-

8.5pF @ 3V

200mW (Ta)

150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

F445MR12W1M1B76BPSA1

Infineon Technologies

SIC 4N-CH 1200V 25A AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

封裝: -

Request a Quote

-

1200V (1.2kV)

25A (Tj)

45mOhm @ 25A, 15V

5.55V @ 10mA

62nC @ 15V

1840pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

HAT2218R0T-EL-E

Renesas

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MCACD20N10YHE3-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Power - Max: 50W (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PDFN5060-8D

封裝: -

Request a Quote

-

100V

20A (Tc)

22mOhm @ 20A, 10V

2.5V @ 250µA

17nC @ 10V

1240pF @ 25V

50W (Tj)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PDFN5060-8D

DF14MR12W1M1HFB67BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

封裝: -

庫存72

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

HUF76113DK8T

Fairchild Semiconductor

MOSFET 2N-CH 30V 6A US8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 25V
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: US8

封裝: -

Request a Quote

Logic Level Gate

30V

6A (Ta)

32mOhm @ 6A, 10V

3V @ 250µA

19.2nC @ 10V

605pF @ 25V

2.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-VFSOP (0.091", 2.30mm Width)

US8

CAS110M12BM2

Wolfspeed, Inc.

SIC 1200V 110A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

110A

-

Chassis Mount

Module

-

SSF2219Y

Good-Ark Semiconductor

MOSFET 2P-CH 20V 0.4A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Power - Max: 312mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

庫存18,000

-

20V

400mA (Tc)

600mOhm @ 300mA, 4.5V

1V @ 250µA

2nC @ 4.5V

78pF @ 10V

312mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FF6MR12W2M1HB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 145A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tj)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 150A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 60mA
Gate Charge (Qg) (Max) @ Vgs: 446nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

庫存87

-

1200V (1.2kV)

145A (Tj)

5.4mOhm @ 150A, 18V

5.15V @ 60mA

446nC @ 18V

13200pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

GCMX020A120B2H1P

SemiQ

SIC 1200V 20M MOSFET FULL-BRIDGE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Power - Max: 333W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存30

-

1200V (1.2kV)

102A (Tc)

28mOhm @ 50A, 20V

4V @ 20mA

222nC @ 20V

5600pF @ 800V

333W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SI1539CDL-T1-BE3

Vishay Siliconix

MOSFET N/P-CH 30V 0.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封裝: -

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-

30V

700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)

388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V

2.5V @ 250µA

1.5nC @ 10V, 3nC @ 10V

28pF @ 15V, 34pF @ 15V

290mW (Ta), 340mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

DMC10H220LSD-13

Diodes Incorporated

MOSFET N/P-CH 100V 1.7A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V, 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V, 1030pF @ 50V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: -

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-

100V

1.7A (Ta)

220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V

3V @ 250µA

8.3nC @ 10V, 17.5nC @ 10V

340pF @ 50V, 1030pF @ 50V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

UPA603T-T2-A

Renesas Electronics Corporation

MOSFET 2P-CH 50V 0.1A SC59

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-59-6
Supplier Device Package: SC-59

封裝: -

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-

50V

100mA

60Ohm @ 10mA, 10V

2.5V @ 1µA

-

17pF @ 5V

300mW

150°C (TJ)

Surface Mount

SC-59-6

SC-59

PJQ1820_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.8A 6DFN

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Supplier Device Package: DFN1010-6L

封裝: -

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-

20V

800mA (Ta)

300mOhm @ 500mA, 4.5V

1V @ 250µA

1.1nC @ 4.5V

46pF @ 10V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN

DFN1010-6L