頁 128 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VQ1006P	Vishay Siliconix	MOSFET 4N-CH 90V 0.4A 14DIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 14-DIP	封裝: -	庫存6,168	Logic Level Gate	90V	400mA	4.5 Ohm @ 1A, 10V	2.5V @ 1mA	-	60pF @ 25V	2W	-55°C ~ 150°C (TJ)	Through Hole	-	14-DIP
BSS84DW-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,904	Logic Level Gate	50V	130mA	10 Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMPH6050SSDQ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 FET Type: 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,576	Standard	-	5.2A (Ta)	48 mOhm @ 5A, 10V	3V @ 250µA	14.5nC @ 4.5V	1525pF @ 30V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
VEC2415-TL-W	ON Semiconductor	MOSFET 2N-CH 60V 3A VEC8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	封裝: 8-SMD, Flat Lead	庫存4,336	Logic Level Gate, 4V Drive	60V	3A	80 mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
MCH6662-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 2A MCPH6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	封裝: 6-SMD, Flat Leads	庫存72,000	Logic Level Gate	20V	2A	160 mOhm @ 1A, 4.5V	-	1.8nC @ 4.5V	128pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
CPH6636R-TL-W	ON Semiconductor	MOSFET 2N-CH 24V 6A CPH6 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 900mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	封裝: SOT-23-6 Thin, TSOT-23-6	庫存5,904	Logic Level Gate, 2.5V Drive	24V	6A	20 mOhm @ 3A, 4.5V	-	3nC @ 4.5V	-	900mW	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH
BUK9K45-100E,115	Nexperia USA Inc.	MOSFET 2N-CH 100V 21A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Power - Max: 53W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封裝: SOT-1205, 8-LFPAK56	庫存6,240	Logic Level Gate	100V	21A	42 mOhm @ 5A, 10V	2.1V @ 1mA	33.5nC @ 10V	2152pF @ 25V	53W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
UT6JA2TCR	Rohm Semiconductor	-30V PCH+PCH MIDDLE POWER MOSFET FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: HUML2020L8	封裝: 6-UDFN Exposed Pad	庫存2,000	-	30V	4A	70 mOhm @ 4A, 10V	2.5V @ 1mA	6.7nC @ 10V	305pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	HUML2020L8
IRF7341PBF	Infineon Technologies	MOSFET 2N-CH 55V 4.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,668	Logic Level Gate	55V	4.7A	50 mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMHC6A07N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 60V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存63,600	Logic Level Gate	60V	1.39A, 1.28A	250 mOhm @ 1.8A, 10V	3V @ 250µA	3.2nC @ 10V	166pF @ 40V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI4599DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 6.8A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Power - Max: 3W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存498,456	Logic Level Gate	40V	6.8A, 5.8A	35.5 mOhm @ 5A, 10V	3V @ 250µA	20nC @ 10V	640pF @ 20V	3W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRFR420U	Harris Corporation	MOSFET N-CH 500V 2.5A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRFNL210BTA	Fairchild Semiconductor	MOSFET N-CH 200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC67D8UFDBQ-13	Diodes Incorporated	MOSFET N/P-CH 60V 0.39A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V, 20V Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4pC @ 4.5V, 7.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V Power - Max: 580mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封裝: -	Request a Quote	-	60V, 20V	390mA (Ta), 2.9A (Ta)	4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V	2.5V @ 250µA, 1.25V @ 250µA	0.4pC @ 4.5V, 7.3nC @ 4.5V	41pF @ 25V, 443pF @ 16V	580mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SH32N65DM6AG	STMicroelectronics	MOSFET 2N-CH 650V 32A 9ACEPACK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 100V Power - Max: 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-ACEPACK SMIT	封裝: -	庫存702	-	650V	32A (Tc)	97mOhm @ 23A, 10V	4.75V @ 250µA	47nC @ 10V	2211pF @ 100V	208W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	9-PowerSMD	9-ACEPACK SMIT
AONY36306	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 17.5A/32A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封裝: -	Request a Quote	-	30V	17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)	6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V	2.2V @ 250µA, 1.9V @ 250µA	30nC @ 10V, 42nC @ 10V	1000pF @ 15V, 1930pF @ 15V	2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
SI4534DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 60V 6.2A/8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V Power - Max: 2W (Ta), 3.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存30,075	-	60V	6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)	29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V	3V @ 250µA	11nC @ 10V, 22nC @ 10V	420pF @ 30V, 650pF @ 30V	2W (Ta), 3.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
VEC2415-TL-W-Z	onsemi	MOSFET 2N-CH 60V 3A SOT28 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	封裝: -	Request a Quote	-	60V	3A (Ta)	80mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	-	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
SQJB40EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	封裝: -	庫存27,000	-	40V	30A (Tc)	8mOhm @ 8A, 10V	2.5V @ 250µA	35nC @ 10V	1900pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
MSCSM120AM50CT1AG	Microchip Technology	SIC 2N-CH 1200V 55A SP1F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1F	封裝: -	Request a Quote	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1F
DMN3061SVTQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 3.4A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Power - Max: 880mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封裝: -	庫存8,358	-	30V	3.4A (Ta)	60mOhm @ 3.1A, 10V	1.8V @ 250µA	6.6nC @ 10V	278pF @ 15V	880mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
XP3832CMT	YAGEO XSEMI	FET 2N-CH 30V 16A 55A 27A 85A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 15V, 3920pF @ 15V Power - Max: 2.08W (Ta), 2.27W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PMPAK® 5 x 6	封裝: -	庫存3,000	-	30V	16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)	5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V	2.2V @ 250µA	30.4nC @ 10V	1712pF @ 15V, 3920pF @ 15V	2.08W (Ta), 2.27W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PMPAK® 5 x 6
RF1S30N06LE	Harris Corporation	MOSFET N-CH 60V 30A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP2110UVTQ-13	Diodes Incorporated	MOSFET 2P-CH 20V 1.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Power - Max: 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封裝: -	Request a Quote	-	20V	1.8A (Ta)	150mOhm @ 2.8A, 4.5V	1V @ 250µA	6nC @ 4.5V	443pF @ 6V	740mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
MSCSM120AM13CT6AG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
XP3700YT	YAGEO XSEMI	MOSFET N AND P-CH 30V 8.7A 6.1A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerDFN Supplier Device Package: PMPAK® 3 x 3	封裝: -	庫存2,985	-	30V	8.7A (Ta), 6.1A (Tc)	20mOhm @ 8A, 10V	2.5V @ 1mA	8nC @ 4.5V	880pF @ 15V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerDFN	PMPAK® 3 x 3
SP8K24FRATB	Rohm Semiconductor	MOSFET 2N-CH 45V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存3	-	45V	6A (Ta)	25mOhm @ 6A, 10V	2.5V @ 1mA	21.6nC @ 5V	1400pF @ 10V	2W	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NTTFD018N08LC	onsemi	MOSFET 2N-CH 80V 6A/26A 12WQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V Power - Max: 1.7W (Ta), 26W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Supplier Device Package: 12-WQFN (3.3x3.3)	封裝: -	庫存8,970	-	80V	6A (Ta), 26A (Tc)	18mOhm @ 7.8A, 10V	2.5V @ 44µA	12.4nC @ 10V	856pF @ 40V	1.7W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)

VQ1006P

Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 14-DIP

封裝: -

庫存6,168

Logic Level Gate

90V

400mA

4.5 Ohm @ 1A, 10V

2.5V @ 1mA

-

60pF @ 25V

2W

-55°C ~ 150°C (TJ)

Through Hole

-

14-DIP

BSS84DW-7

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,904

Logic Level Gate

50V

130mA

10 Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMPH6050SSDQ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

FET Type: 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,576

Standard

-

5.2A (Ta)

48 mOhm @ 5A, 10V

3V @ 250µA

14.5nC @ 4.5V

1525pF @ 30V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

VEC2415-TL-W

ON Semiconductor

MOSFET 2N-CH 60V 3A VEC8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

封裝: 8-SMD, Flat Lead

庫存4,336

Logic Level Gate, 4V Drive

60V

3A

80 mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

MCH6662-TL-H

ON Semiconductor

MOSFET 2N-CH 20V 2A MCPH6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

封裝: 6-SMD, Flat Leads

庫存72,000

Logic Level Gate

20V

2A

160 mOhm @ 1A, 4.5V

-

1.8nC @ 4.5V

128pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH

CPH6636R-TL-W

ON Semiconductor

MOSFET 2N-CH 24V 6A CPH6

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 900mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

封裝: SOT-23-6 Thin, TSOT-23-6

庫存5,904

Logic Level Gate, 2.5V Drive

24V

6A

20 mOhm @ 3A, 4.5V

-

3nC @ 4.5V

-

900mW

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH

BUK9K45-100E,115

Nexperia USA Inc.

MOSFET 2N-CH 100V 21A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封裝: SOT-1205, 8-LFPAK56

庫存6,240

Logic Level Gate

100V

21A

42 mOhm @ 5A, 10V

2.1V @ 1mA

33.5nC @ 10V

2152pF @ 25V

53W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

UT6JA2TCR

Rohm Semiconductor

-30V PCH+PCH MIDDLE POWER MOSFET

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: HUML2020L8

封裝: 6-UDFN Exposed Pad

庫存2,000

-

30V

4A

70 mOhm @ 4A, 10V

2.5V @ 1mA

6.7nC @ 10V

305pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

HUML2020L8

IRF7341PBF

Infineon Technologies

MOSFET 2N-CH 55V 4.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,668

Logic Level Gate

55V

4.7A

50 mOhm @ 4.7A, 10V

1V @ 250µA

36nC @ 10V

740pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMHC6A07N8TC

Diodes Incorporated

MOSFET 2N/2P-CH 60V 8-SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Power - Max: 870mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存63,600

Logic Level Gate

60V

1.39A, 1.28A

250 mOhm @ 1.8A, 10V

3V @ 250µA

3.2nC @ 10V

166pF @ 40V

870mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SI4599DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 40V 6.8A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power - Max: 3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存498,456

Logic Level Gate

40V

6.8A, 5.8A

35.5 mOhm @ 5A, 10V

3V @ 250µA

20nC @ 10V

640pF @ 20V

3W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRFR420U

Harris Corporation

MOSFET N-CH 500V 2.5A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

IRFNL210BTA

Fairchild Semiconductor

MOSFET N-CH 200V

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

DMC67D8UFDBQ-13

Diodes Incorporated

MOSFET N/P-CH 60V 0.39A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V, 20V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4pC @ 4.5V, 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
Power - Max: 580mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封裝: -

Request a Quote

-

60V, 20V

390mA (Ta), 2.9A (Ta)

4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V

2.5V @ 250µA, 1.25V @ 250µA

0.4pC @ 4.5V, 7.3nC @ 4.5V

41pF @ 25V, 443pF @ 16V

580mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SH32N65DM6AG

STMicroelectronics

MOSFET 2N-CH 650V 32A 9ACEPACK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 100V
Power - Max: 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-ACEPACK SMIT

封裝: -

庫存702

-

650V

32A (Tc)

97mOhm @ 23A, 10V

4.75V @ 250µA

47nC @ 10V

2211pF @ 100V

208W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

9-PowerSMD

9-ACEPACK SMIT

AONY36306

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17.5A/32A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封裝: -

Request a Quote

-

30V

17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)

6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V

2.2V @ 250µA, 1.9V @ 250µA

30nC @ 10V, 42nC @ 10V

1000pF @ 15V, 1930pF @ 15V

2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

SI4534DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 60V 6.2A/8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V
Power - Max: 2W (Ta), 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存30,075

-

60V

6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)

29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V

3V @ 250µA

11nC @ 10V, 22nC @ 10V

420pF @ 30V, 650pF @ 30V

2W (Ta), 3.6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

VEC2415-TL-W-Z

onsemi

MOSFET 2N-CH 60V 3A SOT28

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

封裝: -

Request a Quote

-

60V

3A (Ta)

80mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

-

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

SQJB40EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

封裝: -

庫存27,000

-

40V

30A (Tc)

8mOhm @ 8A, 10V

2.5V @ 250µA

35nC @ 10V

1900pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

MSCSM120AM50CT1AG

Microchip Technology

SIC 2N-CH 1200V 55A SP1F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1F

封裝: -

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-

1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 1mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP1F

DMN3061SVTQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Power - Max: 880mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封裝: -

庫存8,358

-

30V

3.4A (Ta)

60mOhm @ 3.1A, 10V

1.8V @ 250µA

6.6nC @ 10V

278pF @ 15V

880mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

XP3832CMT

YAGEO XSEMI

FET 2N-CH 30V 16A 55A 27A 85A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 15V, 3920pF @ 15V
Power - Max: 2.08W (Ta), 2.27W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PMPAK® 5 x 6

封裝: -

庫存3,000

-

30V

16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)

5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V

2.2V @ 250µA

30.4nC @ 10V

1712pF @ 15V, 3920pF @ 15V

2.08W (Ta), 2.27W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PMPAK® 5 x 6

RF1S30N06LE

Harris Corporation

MOSFET N-CH 60V 30A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

DMP2110UVTQ-13

Diodes Incorporated

MOSFET 2P-CH 20V 1.8A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Power - Max: 740mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封裝: -

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-

20V

1.8A (Ta)

150mOhm @ 2.8A, 4.5V

1V @ 250µA

6nC @ 4.5V

443pF @ 6V

740mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

MSCSM120AM13CT6AG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

XP3700YT

YAGEO XSEMI

MOSFET N AND P-CH 30V 8.7A 6.1A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerDFN
Supplier Device Package: PMPAK® 3 x 3

封裝: -

庫存2,985

-

30V

8.7A (Ta), 6.1A (Tc)

20mOhm @ 8A, 10V

2.5V @ 1mA

8nC @ 4.5V

880pF @ 15V

2.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerDFN

PMPAK® 3 x 3

SP8K24FRATB

Rohm Semiconductor

MOSFET 2N-CH 45V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存3

-

45V

6A (Ta)

25mOhm @ 6A, 10V

2.5V @ 1mA

21.6nC @ 5V

1400pF @ 10V

2W

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NTTFD018N08LC

onsemi

MOSFET 2N-CH 80V 6A/26A 12WQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V
Power - Max: 1.7W (Ta), 26W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Supplier Device Package: 12-WQFN (3.3x3.3)

封裝: -

庫存8,970

-

80V

6A (Ta), 26A (Tc)

18mOhm @ 7.8A, 10V

2.5V @ 44µA

12.4nC @ 10V

856pF @ 40V

1.7W (Ta), 26W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWQFN

12-WQFN (3.3x3.3)