頁 116 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BTS7904BATMA1	Infineon Technologies	MOSFET N/P-CH 55V/30V 40A TO263 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V, 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Power - Max: 69W, 96W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: PG-TO263-5	封裝: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	庫存3,472	Logic Level Gate	55V, 30V	40A	11.7 mOhm @ 20A, 10V	2.2V @ 40µA	121nC @ 10V	6100pF @ 25V	69W, 96W	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	PG-TO263-5
JANTX2N7334	Microsemi Corporation	MOSFET 4N-CH 100V 1A MO-036AB FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	封裝: 14-DIP (0.300", 7.62mm)	庫存4,448	Standard	100V	1A	700 mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
ECH8651R-TL-HX	ON Semiconductor	MOSFET 2N-CH 24V 10A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	封裝: 8-SMD, Flat Lead	庫存1,502,940	Logic Level Gate	24V	10A	14 mOhm @ 5A, 4.5V	-	24nC @ 10V	-	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
SI6963BDQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 3.4A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存4,544	Logic Level Gate	20V	3.4A	45 mOhm @ 3.9A, 4.5V	1.4V @ 250µA	11nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTM100A12STG	Microsemi Corporation	MOSFET 2N-CH 1000V 68A LP8W FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封裝: SP3	庫存7,504	Standard	1000V (1kV)	68A	120 mOhm @ 34A, 10V	5V @ 10mA	616nC @ 10V	17400pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTC60DHM24T3G	Microsemi Corporation	MOSFET 2N-CH 600V 95A SP3 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封裝: SP3	庫存2,512	Super Junction	600V	95A	24 mOhm @ 47.5A, 10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
FW217A-TL-2W	ON Semiconductor	MOSFET 2N-CH 35V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Power - Max: 2.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,104	Logic Level Gate, 4.5V Drive	35V	6A	39 mOhm @ 6A, 10V	-	10nC @ 10V	470pF @ 20V	2.2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC6070LND-7	Diodes Incorporated	MOSFET N/P-CH 60V 8POWERDI FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	封裝: 8-PowerVDFN	庫存7,088	Standard	60V	3.1A, 2.4A	85 mOhm @ 1.5A, 10V	3V @ 250µA	11.5nC @ 10V	731pF @ 20V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
ALD212900PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 14 Ohm Vgs(th) (Max) @ Id: 20mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存6,144	Logic Level Gate	10.6V	80mA	14 Ohm	20mV @ 20µA	-	30pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
PMDXB950UPEZ	Nexperia USA Inc.	MOSFET 2P-CH 20V 0.5A 6DFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 265mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	封裝: 6-XFDFN Exposed Pad	庫存107,412	Logic Level Gate	20V	500mA	1.4 Ohm @ 500mA, 4.5V	950mV @ 250µA	2.1nC @ 4.5V	43pF @ 10V	265mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
SIZF640DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 41A PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 159A (Tc) Rds On (Max) @ Id, Vgs: 1.37mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5750pF @ 20V Power - Max: 4.2W (Ta), 62.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerDFN Supplier Device Package: PowerPAIR® 6x5FS	封裝: -	Request a Quote	-	40V	41A (Ta), 159A (Tc)	1.37mOhm @ 15A, 10V	2.4V @ 250µA	106nC @ 10V	5750pF @ 20V	4.2W (Ta), 62.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerDFN	PowerPAIR® 6x5FS
PMCM650CUNEZ	Nexperia USA Inc.	MOSFET 2N-CH 6WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 556mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP (1.48x0.98)	封裝: -	庫存13,500	-	-	-	-	900mV @ 250µA	13nC @ 4.5V	-	556mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFBGA, WLCSP	6-WLCSP (1.48x0.98)
UPA1760G-E1-A	Renesas	MOSFET 2N-CH 30V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	-	30V	8A (Ta)	26mOhm @ 4A, 10V	2.5V @ 1mA	14nC @ 10V	760pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
DMTH4008LPDW-13	Diodes Incorporated	MOSFET 2N-CH 40V 10A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V Power - Max: 2.67W (Ta), 39.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	封裝: -	庫存7,500	-	40V	10A (Ta), 46.2A (Tc)	12.3mOhm @ 20A, 10V	2.3V @ 250µA	12.3nC @ 10V	881pF @ 20V	2.67W (Ta), 39.4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
2N7002KDW-TP-HF	Micro Commercial Co	MOSFET 2N-CH 60V 0.34A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	-	60V	340mA	3Ohm @ 500mA, 10V	2.5V @ 1mA	-	40pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN2991UDJ	Diodes Incorporated	MOSFET 2N-CH 20V 0.52A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35C @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封裝: -	Request a Quote	-	20V	520mA (Ta)	990mOhm @ 100mA, 4.5V	1V @ 250µA	0.35C @ 4.5V	21.5pF @ 15V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
FDS6990S	Fairchild Semiconductor	MOSFET 2N-CH 30V 7.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	-	30V	7.5A (Ta)	22mOhm @ 7.5A, 10V	3V @ 1mA	16nC @ 5V	1233pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FF3MR12KM1HHPSA1	Infineon Technologies	FF3MR12KM1HHPSA1 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V Vgs(th) (Max) @ Id: 5.1V @ 112mA Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	封裝: -	Request a Quote	-	1200V (1.2kV)	190A (Tc)	4.44mOhm @ 280A, 18V	5.1V @ 112mA	800nC @ 18V	24200pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-62MMHB
UT6KC5TCR	Rohm Semiconductor	MOSFET 2N-CH 60V 3.5A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: DFN2020-8D	封裝: -	庫存3,987	-	60V	3.5A (Ta)	95mOhm @ 3.5A, 10V	2.5V @ 1mA	3.1nC @ 10V	135pF @ 30V	2W (Ta)	150°C (TJ)	Surface Mount	8-PowerUDFN	DFN2020-8D
SIZ200DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 22A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	封裝: -	Request a Quote	-	30V	22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)	5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V	2.4V @ 250µA	28nC @ 10V, 30nC @ 10V	1510pF @ 15V, 1600pF @ 15V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
DMT2005UDV-7	Diodes Incorporated	MOSFET 2N-CH 24V 50A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封裝: -	Request a Quote	-	24V	50A (Tc)	7mOhm @ 14A, 10V	1.5V @ 250µA	46.7nC @ 10V	2060pF @ 10V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
NDS9952A-F011	onsemi	MOSFET N/P-CH 30V 2.9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	-	30V	2.9A	80mOhm @ 1A, 10V	2.8V @ 250µA	27nC @ 10V, 5nC @ 10V	320pF @ 10V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NXV08H250DT1	onsemi	APM17-MDC, MV7 80V, AL2O3, 2 PHA FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Power - Max: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Supplier Device Package: APM17-MDC	封裝: -	Request a Quote	-	80V	-	1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V	4.6V @ 1mA	320nC @ 10V	24350pF @ 40V	-	175°C (TJ)	Through Hole	17-PowerDIP Module (1.390", 35.30mm)	APM17-MDC
SSM6N48FU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存8,250	-	30V	100mA (Ta)	3.2Ohm @ 10mA, 4V	1.5V @ 100µA	-	15.1pF @ 3V	300mW	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
DMN3401LV-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	Request a Quote	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 100µA	1.2nC @ 10V	50pF @ 15V	490mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3061SVTQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 3.4A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Power - Max: 880mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封裝: -	Request a Quote	-	30V	3.4A (Ta)	60mOhm @ 3.1A, 10V	1.8V @ 250µA	6.6nC @ 10V	278pF @ 15V	880mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN52D0UV-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Power - Max: 480mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	庫存9,000	-	50V	480mA (Ta)	2Ohm @ 5mA, 5V	1V @ 250µA	1.5nC @ 10V	39pF @ 25V	480mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
BUK9K25-40E-1X	Nexperia USA Inc.	MOSFET 40V 18.2A LFPAK56D FET Type: - FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Power - Max: 32W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封裝: -	Request a Quote	Logic Level Gate	40V	18.2A (Ta)	24mOhm @ 5A, 10V	2.1V @ 1mA	6.3nC @ 5V	701pF @ 25V	32W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

BTS7904BATMA1

Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO263

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V, 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
Power - Max: 69W, 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Supplier Device Package: PG-TO263-5

封裝: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

庫存3,472

Logic Level Gate

55V, 30V

40A

11.7 mOhm @ 20A, 10V

2.2V @ 40µA

121nC @ 10V

6100pF @ 25V

69W, 96W

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

PG-TO263-5

JANTX2N7334

Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB

封裝: 14-DIP (0.300", 7.62mm)

庫存4,448

Standard

100V

1A

700 mOhm @ 600mA, 10V

4V @ 250µA

60nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

MO-036AB

ECH8651R-TL-HX

ON Semiconductor

MOSFET 2N-CH 24V 10A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

封裝: 8-SMD, Flat Lead

庫存1,502,940

Logic Level Gate

24V

10A

14 mOhm @ 5A, 4.5V

-

24nC @ 10V

-

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

SI6963BDQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 3.4A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存4,544

Logic Level Gate

20V

3.4A

45 mOhm @ 3.9A, 4.5V

1.4V @ 250µA

11nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTM100A12STG

Microsemi Corporation

MOSFET 2N-CH 1000V 68A LP8W

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封裝: SP3

庫存7,504

Standard

1000V (1kV)

68A

120 mOhm @ 34A, 10V

5V @ 10mA

616nC @ 10V

17400pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTC60DHM24T3G

Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封裝: SP3

庫存2,512

Super Junction

600V

95A

24 mOhm @ 47.5A, 10V

3.9V @ 5mA

300nC @ 10V

14400pF @ 25V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

FW217A-TL-2W

ON Semiconductor

MOSFET 2N-CH 35V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Power - Max: 2.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,104

Logic Level Gate, 4.5V Drive

35V

6A

39 mOhm @ 6A, 10V

-

10nC @ 10V

470pF @ 20V

2.2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC6070LND-7

Diodes Incorporated

MOSFET N/P-CH 60V 8POWERDI

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

封裝: 8-PowerVDFN

庫存7,088

Standard

60V

3.1A, 2.4A

85 mOhm @ 1.5A, 10V

3V @ 250µA

11.5nC @ 10V

731pF @ 20V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

ALD212900PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 14 Ohm
Vgs(th) (Max) @ Id: 20mV @ 20µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存6,144

Logic Level Gate

10.6V

80mA

14 Ohm

20mV @ 20µA

-

30pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

PMDXB950UPEZ

Nexperia USA Inc.

MOSFET 2P-CH 20V 0.5A 6DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Power - Max: 265mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

封裝: 6-XFDFN Exposed Pad

庫存107,412

Logic Level Gate

20V

500mA

1.4 Ohm @ 500mA, 4.5V

950mV @ 250µA

2.1nC @ 4.5V

43pF @ 10V

265mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

SIZF640DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 41A PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.37mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5750pF @ 20V
Power - Max: 4.2W (Ta), 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerDFN
Supplier Device Package: PowerPAIR® 6x5FS

封裝: -

Request a Quote

-

40V

41A (Ta), 159A (Tc)

1.37mOhm @ 15A, 10V

2.4V @ 250µA

106nC @ 10V

5750pF @ 20V

4.2W (Ta), 62.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerDFN

PowerPAIR® 6x5FS

PMCM650CUNEZ

Nexperia USA Inc.

MOSFET 2N-CH 6WLCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 556mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP (1.48x0.98)

封裝: -

庫存13,500

-

900mV @ 250µA

13nC @ 4.5V

-

556mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFBGA, WLCSP

6-WLCSP (1.48x0.98)

UPA1760G-E1-A

Renesas

MOSFET 2N-CH 30V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

-

30V

8A (Ta)

26mOhm @ 4A, 10V

2.5V @ 1mA

14nC @ 10V

760pF @ 10V

2W (Ta)

150°C

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

DMTH4008LPDW-13

Diodes Incorporated

MOSFET 2N-CH 40V 10A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
Power - Max: 2.67W (Ta), 39.4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

封裝: -

庫存7,500

-

40V

10A (Ta), 46.2A (Tc)

12.3mOhm @ 20A, 10V

2.3V @ 250µA

12.3nC @ 10V

881pF @ 20V

2.67W (Ta), 39.4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

2N7002KDW-TP-HF

Micro Commercial Co

MOSFET 2N-CH 60V 0.34A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

Request a Quote

-

60V

340mA

3Ohm @ 500mA, 10V

2.5V @ 1mA

-

40pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN2991UDJ

Diodes Incorporated

MOSFET 2N-CH 20V 0.52A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35C @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封裝: -

Request a Quote

-

20V

520mA (Ta)

990mOhm @ 100mA, 4.5V

1V @ 250µA

0.35C @ 4.5V

21.5pF @ 15V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

FDS6990S

Fairchild Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

-

30V

7.5A (Ta)

22mOhm @ 7.5A, 10V

3V @ 1mA

16nC @ 5V

1233pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FF3MR12KM1HHPSA1

Infineon Technologies

FF3MR12KM1HHPSA1

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MMHB

封裝: -

Request a Quote

-

1200V (1.2kV)

190A (Tc)

4.44mOhm @ 280A, 18V

5.1V @ 112mA

800nC @ 18V

24200pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-62MMHB

UT6KC5TCR

Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: DFN2020-8D

封裝: -

庫存3,987

-

60V

3.5A (Ta)

95mOhm @ 3.5A, 10V

2.5V @ 1mA

3.1nC @ 10V

135pF @ 30V

2W (Ta)

150°C (TJ)

Surface Mount

8-PowerUDFN

DFN2020-8D

SIZ200DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 22A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

封裝: -

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-

30V

22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)

5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V

2.4V @ 250µA

28nC @ 10V, 30nC @ 10V

1510pF @ 15V, 1600pF @ 15V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

DMT2005UDV-7

Diodes Incorporated

MOSFET 2N-CH 24V 50A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封裝: -

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-

24V

50A (Tc)

7mOhm @ 14A, 10V

1.5V @ 250µA

46.7nC @ 10V

2060pF @ 10V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

NDS9952A-F011

onsemi

MOSFET N/P-CH 30V 2.9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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-

30V

2.9A

80mOhm @ 1A, 10V

2.8V @ 250µA

27nC @ 10V, 5nC @ 10V

320pF @ 10V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NXV08H250DT1

onsemi

APM17-MDC, MV7 80V, AL2O3, 2 PHA

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Power - Max: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Supplier Device Package: APM17-MDC

封裝: -

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-

80V

-

1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V

4.6V @ 1mA

320nC @ 10V

24350pF @ 40V

-

175°C (TJ)

Through Hole

17-PowerDIP Module (1.390", 35.30mm)

APM17-MDC

SSM6N48FU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
Power - Max: 300mW
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存8,250

-

30V

100mA (Ta)

3.2Ohm @ 10mA, 4V

1.5V @ 100µA

-

15.1pF @ 3V

300mW

150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

DMN3401LV-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

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-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 100µA

1.2nC @ 10V

50pF @ 15V

490mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN3061SVTQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Power - Max: 880mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封裝: -

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-

30V

3.4A (Ta)

60mOhm @ 3.1A, 10V

1.8V @ 250µA

6.6nC @ 10V

278pF @ 15V

880mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN52D0UV-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.48A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Power - Max: 480mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

庫存9,000

-

50V

480mA (Ta)

2Ohm @ 5mA, 5V

1V @ 250µA

1.5nC @ 10V

39pF @ 25V

480mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

BUK9K25-40E-1X

Nexperia USA Inc.

MOSFET 40V 18.2A LFPAK56D

FET Type: -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Power - Max: 32W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封裝: -

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Logic Level Gate

40V

18.2A (Ta)

24mOhm @ 5A, 10V

2.1V @ 1mA

6.3nC @ 5V

701pF @ 25V

32W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D