頁 631 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - 單

記錄 20,307
頁  631/726
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零件編號
製造商
描述
封裝
庫存
數量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA2125-S-TD-H
ON Semiconductor

TRANS PNP 50V 3A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 3.5W
  • Frequency - Transition: 390MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
封裝: TO-243AA
庫存5,088
3A
50V
500mV @ 100mA, 2A
1µA (ICBO)
200 @ 100mA, 2V
3.5W
390MHz
-
Surface Mount
TO-243AA
PCP
BDW24C-S
Bourns Inc.

TRANS PNP DARL 100V 6A

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存7,728
6A
100V
3V @ 60mA, 6A
500µA
750 @ 2A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot 2SC1741STPQ
Rohm Semiconductor

TRANS NPN 32V 0.5A SPT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 300mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
封裝: SC-72 Formed Leads
庫存60,000
500mA
32V
600mV @ 50mA, 500mA
1µA (ICBO)
120 @ 100mA, 3V
300mW
250MHz
150°C (TJ)
Through Hole
SC-72 Formed Leads
SPT
hot 2SB1241TV2R
Rohm Semiconductor

TRANS PNP 80V 1A ATV

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: ATV
封裝: 3-SIP
庫存30,000
1A
80V
400mV @ 50mA, 500mA
1µA (ICBO)
180 @ 100mA, 3V
1W
100MHz
150°C (TJ)
Through Hole
3-SIP
ATV
KSD882YSTSSTU
Fairchild/ON Semiconductor

TRANS NPN 30V 3A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 90MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
封裝: TO-225AA, TO-126-3
庫存6,992
3A
30V
500mV @ 200mA, 2A
1µA (ICBO)
160 @ 1A, 2V
1W
90MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
FJX1182OTF
Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A SOT-323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: SC-70, SOT-323
庫存5,232
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 100mA, 1V
150mW
200MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot KST5088MTF
Fairchild/ON Semiconductor

TRANS NPN 30V 0.05A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存864,000
50mA
30V
500mV @ 1mA, 10mA
50nA (ICBO)
300 @ 100µA, 5V
350mW
50MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot 2N1711
STMicroelectronics

TRANS NPN 50V 0.5A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封裝: TO-205AD, TO-39-3 Metal Can
庫存7,840
500mA
50V
1.5V @ 15mA, 150mA
10nA (ICBO)
35 @ 100mA, 10V
800mW
100MHz
175°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
hot JAN2N3792
Microsemi Corporation

TRANS PNP 80V 10A TO-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
封裝: TO-3
庫存15,300
10A
80V
2.5V @ 2A, 10A
5mA
30 @ 3A, 2V
5W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-3
TO-3 (TO-204AA)
JAN2N6306
Microsemi Corporation

TRANS NPN 250V 8A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
  • Power - Max: 125W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
封裝: TO-204AA, TO-3
庫存7,296
8A
250V
5V @ 2A, 8A
50µA
15 @ 3A, 5V
125W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
NJVNJD35N04G
ON Semiconductor

TRANS NPN DARL 350V 4A DPAK-4

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
  • Power - Max: 45W
  • Frequency - Transition: 90MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,136
4A
350V
1.5V @ 20mA, 2A
50µA
2000 @ 2A, 2V
45W
90MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
CP396V-2N2369A-CT20
Central Semiconductor Corp

TRANS NPN 1=20PCS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: -
  • Frequency - Transition: 500MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存7,184
200mA
15V
500mV @ 10mA, 100mA
400nA (ICBO)
40 @ 10mA, 1V
-
500MHz
-65°C ~ 200°C (TJ)
Surface Mount
Die
Die
DXT2012P5-13
Diodes Incorporated

TRANS PNP 60V 5.5A POWERDI5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5.5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 3.2W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
封裝: PowerDI? 5
庫存3,792
5.5A
60V
250mV @ 500mA, 5A
20nA (ICBO)
100 @ 2A, 1V
3.2W
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI? 5
PowerDI? 5
PN2907ATAR
Fairchild/ON Semiconductor

TRANS PNP 60V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
庫存2,448
800mA
60V
1.6V @ 50mA, 500mA
20nA (ICBO)
100 @ 150mA, 10V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot NSM6056MT1G
ON Semiconductor

TRANS NPN 40V 0.6A SC74

  • Transistor Type: NPN + Zener Diode (Isolated)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
  • Power - Max: 380mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SC-74
封裝: SC-74, SOT-457
庫存72,000
600mA
40V
750mV @ 50mA, 500mA
-
100 @ 150mA, 1V
380mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
SC-74
ABC856BW-HF
Comchip Technology

TRANS PNP 65V 0.1A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: -
Request a Quote
100 mA
65 V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
200 mW
250MHz
-65°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
JANSP2N2906AUB-TR
Microchip Technology

TRANS PNP 60V 0.6A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封裝: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C
Surface Mount
3-SMD, No Lead
UB
2N5680L
Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5050
Microchip Technology

NPN SILICON TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5758
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 150 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
封裝: -
Request a Quote
6 A
100 V
-
-
-
150 W
-
-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
2SB861C
Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR, PNP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
  • Power - Max: 1.8 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: -
Request a Quote
2 A
150 V
3V @ 50mA, 500mA
1µA (ICBO)
100 @ 500mA, 10V
1.8 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
2SC2883-Y-TP
Micro Commercial Co

TRANS NPN 30V 1.5A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: -
Request a Quote
1.5 A
30 V
2V @ 30mA, 1.5A
100nA (ICBO)
160 @ 500mA, 2V
500 mW
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
BC54-16PAS-QX
Nexperia USA Inc.

POWER BJTS IN DFN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 420 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-3
封裝: -
庫存9,000
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
420 mW
180MHz
150°C (TJ)
Surface Mount
3-UDFN Exposed Pad
DFN2020D-3
2SC1008-O-AP
Micro Commercial Co

TRANS NPN 60V 0.7A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
  • Power - Max: 800 mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
封裝: -
Request a Quote
700 mA
60 V
400mV @ 50mA, 500mA
100nA (ICBO)
70 @ 50mA, 2V
800 mW
30MHz
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
NSVS50031SB3T1G
onsemi

TRANS NPN 50V 3A 3CPH

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 1.1 W
  • Frequency - Transition: 380MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CPH
封裝: -
庫存4,308
3 A
50 V
210mV @ 100mA, 2A
1µA (ICBO)
200 @ 100mA, 2V
1.1 W
380MHz
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CPH
JANSL2N3637UB-TR
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封裝: -
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1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2SC3787S
onsemi

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 140 mA
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Power - Max: 1.3 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126ML
封裝: -
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140 mA
160 V
300mV @ 5mA, 50mA
100nA (ICBO)
100 @ 10mA, 5V
1.3 W
150MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126ML
JANTX2N3251A
Microsemi Corporation

TRANS PNP 60V 0.2A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
封裝: -
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200 mA
60 V
500mV @ 5mA, 50mA
10µA (ICBO)
100 @ 10mA, 1V
360 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)