頁 567 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1020-Y(T6TOJ,FM	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封裝: TO-226-3, TO-92-3 Long Body	庫存2,816	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
JAN2N718A	Microsemi Corporation	TRANS NPN 30V 0.5A Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	封裝: TO-206AA, TO-18-3 Metal Can	庫存7,312	500mA	30V	1.5V @ 15mA, 150mA	10µA (ICBO)	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
MPS5172RLRMG	ON Semiconductor	TRANS NPN 25V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存3,808	100mA	25V	250mV @ 1mA, 10mA	100nA	100 @ 10mA, 10V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ZTX601STOA	Diodes Incorporated	TRANS NPN DARL 160V 1A E-LINE Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1W Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封裝: E-Line-3, Formed Leads	庫存2,496	1A	160V	1.2V @ 10mA, 1A	10µA	2000 @ 500mA, 10V	1W	250MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
ZTX450STOB	Diodes Incorporated	TRANS NPN 45V 1A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封裝: E-Line-3, Formed Leads	庫存4,720	1A	45V	250mV @ 15mA, 150mA	100nA (ICBO)	100 @ 150mA, 10V	1W	150MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
2SC4420	Panasonic Electronic Components	TRANS NPN 800V 3A TOP-3F Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 160mA, 800mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 800mA, 5V Power - Max: 3W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TOP-3F Supplier Device Package: TOP-3F-A1	封裝: TOP-3F	庫存6,736	3A	800V	1.5V @ 160mA, 800mA	50µA (ICBO)	6 @ 800mA, 5V	3W	10MHz	150°C (TJ)	Through Hole	TOP-3F	TOP-3F-A1
2N6388	STMicroelectronics	TRANS NPN DARL 80V 10A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Power - Max: 65W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存5,360	10A	80V	3V @ 100mA, 10A	1mA	1000 @ 5A, 3V	65W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SC5287	Sanken	TRANS NPN 550V 5A TO3P Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 550V Vce Saturation (Max) @ Ib, Ic: 500mV @ 360mA, 1.8A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1.8A, 4V Power - Max: 80W Frequency - Transition: 6MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	封裝: TO-3P-3, SC-65-3	庫存16,332	5A	550V	500mV @ 360mA, 1.8A	100µA (ICBO)	10 @ 1.8A, 4V	80W	6MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
PZT651T1G	ON Semiconductor	TRANS NPN 60V 2A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Power - Max: 800mW Frequency - Transition: 75MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封裝: TO-261-4, TO-261AA	庫存720,384	2A	60V	500mV @ 200mA, 2A	100nA (ICBO)	75 @ 1A, 2V	800mW	75MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
FZT869TA	Diodes Incorporated	TRANS NPN 25V 7A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 7A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 6.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V Power - Max: 3W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封裝: TO-261-4, TO-261AA	庫存120,444	7A	25V	350mV @ 150mA, 6.5A	50nA (ICBO)	300 @ 1A, 1V	3W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
STI13005-1	STMicroelectronics	TRANS NPN 400V 3A IPAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Power - Max: 30W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-Pak	封裝: TO-251-3 Short Leads, IPak, TO-251AA	庫存24,012	3A	400V	5V @ 750mA, 3A	1mA	8 @ 2A, 5V	30W	-	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-Pak
ZXTN4002ZTA	Diodes Incorporated	TRANS NPN 100V 1A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封裝: TO-243AA	庫存65,640	1A	100V	-	50nA (ICBO)	100 @ 150mA, 200mV	1.5W	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BC337-25-AP	Micro Commercial Co	TRANS NPN 45V 0.8A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 210MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存251,604	800mA	45V	700mV @ 50mA, 500mA	200nA	160 @ 100mA, 1V	625mW	210MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
2N4403TA	Fairchild/ON Semiconductor	TRANS PNP 40V 0.6A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存77,544	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 2V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC549CTA	Fairchild/ON Semiconductor	TRANS NPN 30V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存23,892	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MMBT2907ALT1HTSA1	Infineon Technologies	TRANS PNP 60V 0.6A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存1,894,284	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	330mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
JANSP2N3634UB-TR	Microchip Technology	TRANS PNP 140V 1A UB Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	封裝: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	50 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
JANTX2N6301P	Microchip Technology	POWER BJT Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Power - Max: 75 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	封裝: -	Request a Quote	8 A	80 V	3V @ 80mA, 8A	500µA	750 @ 4A, 3V	75 W	-	-55°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2SA1740E-TD-E	onsemi	PNP SILICON TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1.3 W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	封裝: -	Request a Quote	200 mA	400 V	800mV @ 5mA, 50mA	100nA (ICBO)	100 @ 50mA, 10V	1.3 W	70MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
2N2484-PBFREE	Central Semiconductor Corp	TRANS NPN 60V 0.05A TO18 Transistor Type: NPN Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Power - Max: 360 mW Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	封裝: -	庫存53,889	50 mA	60 V	350mV @ 100µA, 1mA	2nA	100 @ 10µA, 5V	360 mW	60MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N6129	Harris Corporation	NPN POWER TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: 2.5MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封裝: -	Request a Quote	7 A	40 V	2.5V @ 3.2A, 16A	-	-	-	2.5MHz	-	Through Hole	TO-220-3	TO-220-3
JANTX2N3019-TR	Microsemi Corporation	TRANS NPN 80V 1A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	封裝: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10µA (ICBO)	50 @ 500mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
NTE327	NTE Electronics, Inc	TRANS NPN 150V 25A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 2V Power - Max: 200 W Frequency - Transition: 40MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	封裝: -	Request a Quote	25 A	150 V	1.8V @ 2.5A, 25A	50µA	50 @ 500mA, 2V	200 W	40MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
JANKCCR2N3498	Microchip Technology	TRANS NPN 100V 0.5A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	封裝: -	Request a Quote	500 mA	100 V	600mV @ 30mA, 300mA	10µA (ICBO)	40 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANS2N3499U4	Microchip Technology	TRANS NPN 100V 0.5A U4 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	封裝: -	Request a Quote	500 mA	100 V	600mV @ 30mA, 300mA	50nA (ICBO)	100 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
BC857AW-TP	Micro Commercial Co	Interface Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 150 mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	Request a Quote	100 mA	45 V	650mV @ 5mA, 100mA	15nA (ICBO)	125 @ 2mA, 5V	150 mW	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BF393-PBFREE	Central Semiconductor Corp	TRANS NPN 300V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 900mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 1.5 W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	封裝: -	Request a Quote	500 mA	300 V	900mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	1.5 W	50MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
MPSA93-AP	Micro Commercial Co	TRANS PNP 200V 0.5A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Power - Max: 625 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	封裝: -	Request a Quote	500 mA	200 V	500mV @ 2mA, 20mA	250nA (ICBO)	40 @ 10mA, 10V	625 mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92

2SA1020-Y(T6TOJ,FM

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

庫存2,816

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

JAN2N718A

Microsemi Corporation

TRANS NPN 30V 0.5A

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

封裝: TO-206AA, TO-18-3 Metal Can

庫存7,312

500mA

30V

1.5V @ 15mA, 150mA

10µA (ICBO)

40 @ 150mA, 10V

500mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

MPS5172RLRMG

ON Semiconductor

TRANS NPN 25V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存3,808

100mA

25V

250mV @ 1mA, 10mA

100nA

100 @ 10mA, 10V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ZTX601STOA

Diodes Incorporated

TRANS NPN DARL 160V 1A E-LINE

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封裝: E-Line-3, Formed Leads

庫存2,496

1A

160V

1.2V @ 10mA, 1A

10µA

2000 @ 500mA, 10V

1W

250MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

ZTX450STOB

Diodes Incorporated

TRANS NPN 45V 1A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封裝: E-Line-3, Formed Leads

庫存4,720

1A

45V

250mV @ 15mA, 150mA

100nA (ICBO)

100 @ 150mA, 10V

1W

150MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

2SC4420

Panasonic Electronic Components

TRANS NPN 800V 3A TOP-3F

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 160mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 800mA, 5V
Power - Max: 3W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TOP-3F
Supplier Device Package: TOP-3F-A1

封裝: TOP-3F

庫存6,736

3A

800V

1.5V @ 160mA, 800mA

50µA (ICBO)

6 @ 800mA, 5V

3W

10MHz

150°C (TJ)

Through Hole

TOP-3F

TOP-3F-A1

2N6388

STMicroelectronics

TRANS NPN DARL 80V 10A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 65W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存5,360

10A

80V

3V @ 100mA, 10A

1mA

1000 @ 5A, 3V

65W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SC5287

Sanken

TRANS NPN 550V 5A TO3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 550V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 360mA, 1.8A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1.8A, 4V
Power - Max: 80W
Frequency - Transition: 6MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

封裝: TO-3P-3, SC-65-3

庫存16,332

5A

550V

500mV @ 360mA, 1.8A

100µA (ICBO)

10 @ 1.8A, 4V

80W

6MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

PZT651T1G

ON Semiconductor

TRANS NPN 60V 2A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Power - Max: 800mW
Frequency - Transition: 75MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封裝: TO-261-4, TO-261AA

庫存720,384

2A

60V

500mV @ 200mA, 2A

100nA (ICBO)

75 @ 1A, 2V

800mW

75MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

FZT869TA

Diodes Incorporated

TRANS NPN 25V 7A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 6.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
Power - Max: 3W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封裝: TO-261-4, TO-261AA

庫存120,444

7A

25V

350mV @ 150mA, 6.5A

50nA (ICBO)

300 @ 1A, 1V

3W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

STI13005-1

STMicroelectronics

TRANS NPN 400V 3A IPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 30W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-Pak

封裝: TO-251-3 Short Leads, IPak, TO-251AA

庫存24,012

3A

400V

5V @ 750mA, 3A

1mA

8 @ 2A, 5V

30W

-

150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-Pak

ZXTN4002ZTA

Diodes Incorporated

TRANS NPN 100V 1A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封裝: TO-243AA

庫存65,640

1A

100V

-

50nA (ICBO)

100 @ 150mA, 200mV

1.5W

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BC337-25-AP

Micro Commercial Co

TRANS NPN 45V 0.8A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 210MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存251,604

800mA

45V

700mV @ 50mA, 500mA

200nA

160 @ 100mA, 1V

625mW

210MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

2N4403TA

Fairchild/ON Semiconductor

TRANS PNP 40V 0.6A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存77,544

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 2V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC549CTA

Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存23,892

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MMBT2907ALT1HTSA1

Infineon Technologies

TRANS PNP 60V 0.6A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 330mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存1,894,284

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

330mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

JANSP2N3634UB-TR

Microchip Technology

TRANS PNP 140V 1A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

封裝: -

Request a Quote

1 A

140 V

600mV @ 5mA, 50mA

10µA

50 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

JANTX2N6301P

Microchip Technology

POWER BJT

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Power - Max: 75 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

封裝: -

Request a Quote

8 A

80 V

3V @ 80mA, 8A

500µA

750 @ 4A, 3V

75 W

-

-55°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2SA1740E-TD-E

onsemi

PNP SILICON TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1.3 W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

封裝: -

Request a Quote

200 mA

400 V

800mV @ 5mA, 50mA

100nA (ICBO)

100 @ 50mA, 10V

1.3 W

70MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

2N2484-PBFREE

Central Semiconductor Corp

TRANS NPN 60V 0.05A TO18

Transistor Type: NPN
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Power - Max: 360 mW
Frequency - Transition: 60MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

封裝: -

庫存53,889

50 mA

60 V

350mV @ 100µA, 1mA

2nA

100 @ 10µA, 5V

360 mW

60MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2N6129

Harris Corporation

NPN POWER TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: 2.5MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封裝: -

Request a Quote

7 A

40 V

2.5V @ 3.2A, 16A

-

2.5MHz

-

Through Hole

TO-220-3

JANTX2N3019-TR

Microsemi Corporation

TRANS NPN 80V 1A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

封裝: -

Request a Quote

1 A

80 V

500mV @ 50mA, 500mA

10µA (ICBO)

50 @ 500mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

NTE327

NTE Electronics, Inc

TRANS NPN 150V 25A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 2V
Power - Max: 200 W
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

封裝: -

Request a Quote

25 A

150 V

1.8V @ 2.5A, 25A

50µA

50 @ 500mA, 2V

200 W

40MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

JANKCCR2N3498

Microchip Technology

TRANS NPN 100V 0.5A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

封裝: -

Request a Quote

500 mA

100 V

600mV @ 30mA, 300mA

10µA (ICBO)

40 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANS2N3499U4

Microchip Technology

TRANS NPN 100V 0.5A U4

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

封裝: -

Request a Quote

500 mA

100 V

600mV @ 30mA, 300mA

50nA (ICBO)

100 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

BC857AW-TP

Micro Commercial Co

Interface

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 150 mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

Request a Quote

100 mA

45 V

650mV @ 5mA, 100mA

15nA (ICBO)

125 @ 2mA, 5V

150 mW

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BF393-PBFREE

Central Semiconductor Corp

TRANS NPN 300V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 1.5 W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

封裝: -

Request a Quote

500 mA

300 V

900mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

1.5 W

50MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

MPSA93-AP

Micro Commercial Co

TRANS PNP 200V 0.5A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Power - Max: 625 mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

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500 mA

200 V

500mV @ 2mA, 20mA

250nA (ICBO)

40 @ 10mA, 10V

625 mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92