頁 56 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - 單

記錄 20,307
頁  56/726
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零件編號
製造商
描述
封裝
庫存
數量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TRD236DT4
STMicroelectronics

TRANS NPN 400V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.3V @ 600mA, 2.5A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2.5A, 5V
  • Power - Max: 35W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,160
4A
400V
1.3V @ 600mA, 2.5A
250µA
8 @ 2.5A, 5V
35W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
KSC2784PBU
Fairchild/ON Semiconductor

TRANS NPN 120V 0.05A TO-92S

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
封裝: TO-226-3, TO-92-3 Short Body
庫存3,824
50mA
120V
300mV @ 1mA, 10mA
50nA (ICBO)
200 @ 1mA, 6V
300mW
110MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
ZUMT717TC
Diodes Incorporated

TRANS PNP 12V 1.25A SC70-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.25A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1.25A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 220MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: SC-70, SOT-323
庫存7,616
1.25A
12V
240mV @ 100mA, 1.25A
10nA
200 @ 500mA, 2V
500mW
220MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
ZTX694BSTOA
Diodes Incorporated

TRANS NPN 120V 0.5A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: E-Line-3, Formed Leads
庫存2,672
500mA
120V
500mV @ 5mA, 400mA
100nA (ICBO)
400 @ 200mA, 2V
1W
130MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
ZTX601ASTOA
Diodes Incorporated

TRANS NPN DARL 160V 1A E-LINE

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: E-Line-3, Formed Leads
庫存6,176
1A
160V
1.2V @ 10mA, 1A
10µA
2000 @ 500mA, 10V
1W
250MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot TIP127FP
STMicroelectronics

TRANS PNP DARL 100V 5A TO-220FP

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封裝: TO-220-3 Full Pack
庫存63,792
5A
100V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
SPZTA42T1G
ON Semiconductor

TRANS NPN 300V 0.5A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
封裝: TO-261-4, TO-261AA
庫存7,376
500mA
300V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
1.5W
50MHz
-
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
BCW66GR
Nexperia USA Inc.

BCW66GSOT23TO-236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
封裝: TO-236-3, SC-59, SOT-23-3
庫存6,928
800mA
45V
450mV @ 50mA, 500mA
5µA (ICBO)
160 @ 100mA, 1V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
hot BUT11A
Fairchild/ON Semiconductor

TRANS NPN 450V 5A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 100W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存190,416
5A
450V
1.5V @ 500mA, 2.5A
1mA
-
100W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2N6487G
ON Semiconductor

TRANS NPN 60V 15A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
  • Power - Max: 1.8W
  • Frequency - Transition: 5MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存6,888
15A
60V
3.5V @ 5A, 15A
1mA
20 @ 5A, 4V
1.8W
5MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BCW61B,215
Nexperia USA Inc.

TRANS PNP 32V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,808
100mA
32V
550mV @ 1.25mA, 50mA
20nA (ICBO)
180 @ 2mA, 5V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot BUL58D
STMicroelectronics

TRANS NPN 450V 8A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 5A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
  • Power - Max: 85W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存18,228
8A
450V
2V @ 1A, 5A
200µA
5 @ 5A, 5V
85W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
hot 2SC5866TLR
Rohm Semiconductor

TRANS NPN 60V 2A TSMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: TSMT3
封裝: SC-96
庫存328,800
2A
60V
500mV @ 100mA, 1A
1µA (ICBO)
120 @ 100mA, 2V
500mW
200MHz
150°C (TJ)
Surface Mount
SC-96
TSMT3
NTE2525
NTE Electronics, Inc

TRANS PNP 50V 8A TO251

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TO-251
封裝: -
Request a Quote
8 A
50 V
500mV @ 200mA, 4A
1µA (ICBO)
100 @ 500mA, 2V
1 W
130MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TO-251
NTE253MCP
NTE Electronics, Inc

TRANS NPN DARL 80V 4A TO126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
  • Power - Max: 40 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
封裝: -
Request a Quote
4 A
80 V
3V @ 40mA, 4A
100µA
750 @ 1.5A, 3V
40 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
JANSP2N5152
Microchip Technology

RH POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
封裝: -
Request a Quote
2 A
80 V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
2SB1429_R1_00001
Panjit International Inc.

TRANS PNP 20V 3A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1.25 W
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: -
庫存8,667
3 A
20 V
300mV @ 300mA, 3A
100nA (ICBO)
200 @ 500mA, 2V
1.25 W
160MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NTE289AMP
NTE Electronics, Inc

TRANS NPN 80V 0.5A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Power - Max: 600 mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封裝: -
Request a Quote
500 mA
80 V
600mV @ 40mA, 400mA
1µA (ICBO)
100 @ 50mA, 5V
600 mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BC807-16LWX
Nexperia USA Inc.

TRANS PNP 45V 0.5A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: -
庫存9,000
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
200 mW
80MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NTE184MP
NTE Electronics, Inc

TRANS NPN 80V 4A TO126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
  • Power - Max: 40 W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
封裝: -
Request a Quote
4 A
80 V
1.4V @ 1A, 4A
1mA
20 @ 1.5A, 2V
40 W
2MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
JANSL2N3501UB
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BSR43-QX
Nexperia USA Inc.

BSR43-Q/SOT89/MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.35 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 5V
1.35 W
100MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
BC858CLT3
onsemi

TRANS PNP 30V 0.1A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封裝: -
Request a Quote
100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2N6467
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 40 W
  • Frequency - Transition: 5MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66
封裝: -
Request a Quote
4 A
100 V
-
-
-
40 W
5MHz
-
Through Hole
TO-213AA, TO-66-2
TO-66
TIP32A-PBFREE
Central Semiconductor Corp

TRANS PNP 60V 3A TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 40 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: -
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3 A
60 V
1.2V @ 375mA, 3A
300µA
25 @ 1A, 4V
40 W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2SC2411-P-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 32 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
  • Power - Max: 200 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: -
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500 mA
32 V
400mV @ 50mA, 500mA
1µA (ICBO)
82 @ 100mA, 3V
200 mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
JANTX2N2432AUB
Microchip Technology

TRANS NPN 30V 0.1A UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
封裝: -
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100 mA
30 V
-
-
-
-
-
200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
8550SS-C-AP
Micro Commercial Co

TRANS PNP 25V 1.5A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
封裝: -
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1.5 A
25 V
500mV @ 80mA, 800mA
100nA
120 @ 100mA, 1V
1 W
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92