頁 550 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BDV65C-S	Bourns Inc.	TRANS NPN DARL 120V 12A Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	封裝: TO-218-3	庫存6,992	12A	120V	2V @ 20mA, 5A	2mA	1000 @ 5A, 4V	3.5W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
MPS2222AZL1	ON Semiconductor	TRANS NPN 40V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存2,768	600mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSA92,116	NXP	TRANS PNP 300V 0.1A SOT54 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存3,008	100mA	300V	500mV @ 2mA, 20mA	250nA (ICBO)	25 @ 30mA, 10V	625mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BST15,115	NXP	TRANS PNP 200V 0.2A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 1.3W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	封裝: TO-243AA	庫存7,776	200mA	200V	750mV @ 5mA, 50mA	100nA (ICBO)	30 @ 50mA, 10V	1.3W	15MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
FJPF5021RTSTU	Fairchild/ON Semiconductor	TRANS NPN 500V 5A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Power - Max: 40W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	封裝: TO-220-3 Full Pack	庫存6,848	5A	500V	1V @ 600mA, 3A	10µA (ICBO)	15 @ 600mA, 5V	40W	15MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
2SC26320R	Panasonic Electronic Components	TRANS NPN 150V 0.05A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V Power - Max: 1W Frequency - Transition: 160MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92L-A1	封裝: TO-226-3, TO-92-3 Long Body	庫存2,608	50mA	150V	1V @ 3mA, 30mA	-	130 @ 10mA, 5V	1W	160MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92L-A1
2SC24970R	Panasonic Electronic Components	TRANS NPN 50V 1.5A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V Power - Max: 1.2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126B-A1	封裝: TO-225AA, TO-126-3	庫存5,888	1.5A	50V	1V @ 150mA, 1.5A	100µA	120 @ 1A, 5V	1.2W	150MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126B-A1
ZXTN25060BZQTA	Diodes Incorporated	TRANS NPN 60V 5A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 305mV @ 500mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V Power - Max: 1.1W Frequency - Transition: 185MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封裝: TO-243AA	庫存3,248	5A	60V	305mV @ 500mA, 5A	50nA (ICBO)	100 @ 10mA, 2V	1.1W	185MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
US6T4TR	Rohm Semiconductor	TRANS PNP 12V 3A TUMT6 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: 6-TSSOP, SC-88, SOT-363	庫存370,260	3A	12V	250mV @ 30mA, 1.5A	100nA (ICBO)	270 @ 500mA, 2V	1W	280MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
2PB710ASL,215	Nexperia USA Inc.	TRANS PNP 50V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V Power - Max: 250mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	封裝: TO-236-3, SC-59, SOT-23-3	庫存5,552	500mA	50V	600mV @ 30mA, 300mA	10nA (ICBO)	170 @ 150mA, 10V	250mW	140MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BSP 52 E6327	Infineon Technologies	TRANS NPN DARL 80V 1A SOT-223 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封裝: TO-261-4, TO-261AA	庫存3,248	1A	80V	1.8V @ 1mA, 1A	10µA	2000 @ 500mA, 10V	1.5W	200MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
KSD560RTU	Fairchild/ON Semiconductor	TRANS NPN DARL 100V 5A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封裝: TO-220-3	庫存34,200	5A	100V	1.5V @ 3mA, 3A	1µA (ICBO)	2000 @ 3A, 2V	1.5W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
ZXTP25140BFHTA	Diodes Incorporated	TRANS PNP 140V 1A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V Power - Max: 1.25W Frequency - Transition: 75MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存857,664	1A	140V	260mV @ 100mA, 1A	50nA (ICBO)	100 @ 10mA, 2V	1.25W	75MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BDX54CTU	Fairchild/ON Semiconductor	TRANS PNP DARL 100V 8A TO-220 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 60W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	封裝: TO-220-3	庫存16,764	8A	100V	2V @ 12mA, 3A	500µA	750 @ 3A, 3V	60W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
2DA1797-13	Diodes Incorporated	TRANS PNP 50V 3A SOT89-3 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	封裝: TO-243AA	庫存1,080,468	3A	50V	350mV @ 50mA, 1A	100nA (ICBO)	82 @ 500mA, 2V	900mW	160MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
CMPT2222A TR	Central Semiconductor Corp	TRANS NPN 40V 0.6A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 350mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封裝: TO-236-3, SC-59, SOT-23-3	庫存22,800	600mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	350mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MJ21196G	ON Semiconductor	TRANS NPN 250V 16A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 16A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V Power - Max: 250W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	封裝: TO-204AA, TO-3	庫存6,992	16A	250V	4V @ 3.2A, 16A	100µA	25 @ 8A, 5V	250W	4MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
BCW66HTA	Diodes Incorporated	TRANS NPN 45V 0.8A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存122,388	800mA	45V	700mV @ 50mA, 500mA	20nA	250 @ 100mA, 1V	330mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PMBT4403-MIGR	NXP	TRANS PNP SWITCHING TO-236AB Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE2569	NTE Electronics, Inc	TRANS PNP 60V 10A TO220 Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 2V Power - Max: 2 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	封裝: -	Request a Quote	10 A	60 V	400mV @ 250mA, 5A	100µA (ICBO)	70 @ 1A, 2V	2 W	100MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220
BD882-GR-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V Power - Max: 500 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封裝: -	Request a Quote	3 A	30 V	500mV @ 200mA, 2A	10µA	60 @ 1A, 2V	500 mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SB955K-E	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR, PNP Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Power - Max: 50 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: -	Request a Quote	10 A	120 V	3V @ 100mA, 10A	10µA	1000 @ 5A, 3V	50 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
JANSR2N3700UB-TR	Microchip Technology	TRANS NPN 80V 1A UB Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	封裝: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	50 @ 500mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
MPSA05RLRA	onsemi	TRANS NPN SS GP 60V TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 625 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92 (TO-226)	封裝: -	Request a Quote	500 mA	60 V	250mV @ 10mA, 100mA	100nA	100 @ 10mA, 1V	625 mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92 (TO-226)
MJD31CETF	onsemi	TRANS NPN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PBSS8110T-QR	Nexperia USA Inc.	PBSS8110T-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	封裝: -	Request a Quote	1 A	100 V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	300 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
2N5614	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 58 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	封裝: -	Request a Quote	5 A	60 V	-	-	-	58 W	-	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
JANSR2N3634UB	Microchip Technology	TRANS PNP 140V 1A UB Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	封裝: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	50 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB

BDV65C-S

Bourns Inc.

TRANS NPN DARL 120V 12A

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 3.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

封裝: TO-218-3

庫存6,992

12A

120V

2V @ 20mA, 5A

2mA

1000 @ 5A, 4V

3.5W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

MPS2222AZL1

ON Semiconductor

TRANS NPN 40V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存2,768

600mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSA92,116

NXP

TRANS PNP 300V 0.1A SOT54

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存3,008

100mA

300V

500mV @ 2mA, 20mA

250nA (ICBO)

25 @ 30mA, 10V

625mW

50MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BST15,115

NXP

TRANS PNP 200V 0.2A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 1.3W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

封裝: TO-243AA

庫存7,776

200mA

200V

750mV @ 5mA, 50mA

100nA (ICBO)

30 @ 50mA, 10V

1.3W

15MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

FJPF5021RTSTU

Fairchild/ON Semiconductor

TRANS NPN 500V 5A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Power - Max: 40W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

封裝: TO-220-3 Full Pack

庫存6,848

5A

500V

1V @ 600mA, 3A

10µA (ICBO)

15 @ 600mA, 5V

40W

15MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

2SC26320R

Panasonic Electronic Components

TRANS NPN 150V 0.05A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V
Power - Max: 1W
Frequency - Transition: 160MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92L-A1

封裝: TO-226-3, TO-92-3 Long Body

庫存2,608

50mA

150V

1V @ 3mA, 30mA

-

130 @ 10mA, 5V

1W

160MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92L-A1

2SC24970R

Panasonic Electronic Components

TRANS NPN 50V 1.5A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Power - Max: 1.2W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126B-A1

封裝: TO-225AA, TO-126-3

庫存5,888

1.5A

50V

1V @ 150mA, 1.5A

100µA

120 @ 1A, 5V

1.2W

150MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126B-A1

ZXTN25060BZQTA

Diodes Incorporated

TRANS NPN 60V 5A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 305mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
Power - Max: 1.1W
Frequency - Transition: 185MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封裝: TO-243AA

庫存3,248

5A

60V

305mV @ 500mA, 5A

50nA (ICBO)

100 @ 10mA, 2V

1.1W

185MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

US6T4TR

Rohm Semiconductor

TRANS PNP 12V 3A TUMT6

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: 6-TSSOP, SC-88, SOT-363

庫存370,260

3A

12V

250mV @ 30mA, 1.5A

100nA (ICBO)

270 @ 500mA, 2V

1W

280MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

2PB710ASL,215

Nexperia USA Inc.

TRANS PNP 50V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
Power - Max: 250mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

封裝: TO-236-3, SC-59, SOT-23-3

庫存5,552

500mA

50V

600mV @ 30mA, 300mA

10nA (ICBO)

170 @ 150mA, 10V

250mW

140MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BSP 52 E6327

Infineon Technologies

TRANS NPN DARL 80V 1A SOT-223

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封裝: TO-261-4, TO-261AA

庫存3,248

1A

80V

1.8V @ 1mA, 1A

10µA

2000 @ 500mA, 10V

1.5W

200MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

KSD560RTU

Fairchild/ON Semiconductor

TRANS NPN DARL 100V 5A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封裝: TO-220-3

庫存34,200

5A

100V

1.5V @ 3mA, 3A

1µA (ICBO)

2000 @ 3A, 2V

1.5W

-

150°C (TJ)

Through Hole

TO-220-3

ZXTP25140BFHTA

Diodes Incorporated

TRANS PNP 140V 1A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
Power - Max: 1.25W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存857,664

1A

140V

260mV @ 100mA, 1A

50nA (ICBO)

100 @ 10mA, 2V

1.25W

75MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BDX54CTU

Fairchild/ON Semiconductor

TRANS PNP DARL 100V 8A TO-220

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 60W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

封裝: TO-220-3

庫存16,764

8A

100V

2V @ 12mA, 3A

500µA

750 @ 3A, 3V

60W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

2DA1797-13

Diodes Incorporated

TRANS PNP 50V 3A SOT89-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

封裝: TO-243AA

庫存1,080,468

3A

50V

350mV @ 50mA, 1A

100nA (ICBO)

82 @ 500mA, 2V

900mW

160MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

CMPT2222A TR

Central Semiconductor Corp

TRANS NPN 40V 0.6A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 350mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封裝: TO-236-3, SC-59, SOT-23-3

庫存22,800

600mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

350mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MJ21196G

ON Semiconductor

TRANS NPN 250V 16A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Power - Max: 250W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

封裝: TO-204AA, TO-3

庫存6,992

16A

250V

4V @ 3.2A, 16A

100µA

25 @ 8A, 5V

250W

4MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

BCW66HTA

Diodes Incorporated

TRANS NPN 45V 0.8A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存122,388

800mA

45V

700mV @ 50mA, 500mA

20nA

250 @ 100mA, 1V

330mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PMBT4403-MIGR

NXP

TRANS PNP SWITCHING TO-236AB

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

NTE2569

NTE Electronics, Inc

TRANS PNP 60V 10A TO220

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 2V
Power - Max: 2 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

封裝: -

Request a Quote

10 A

60 V

400mV @ 250mA, 5A

100µA (ICBO)

70 @ 1A, 2V

2 W

100MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220

BD882-GR-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
Power - Max: 500 mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封裝: -

Request a Quote

3 A

30 V

500mV @ 200mA, 2A

10µA

60 @ 1A, 2V

500 mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SB955K-E

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR, PNP

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 50 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: -

Request a Quote

10 A

120 V

3V @ 100mA, 10A

10µA

1000 @ 5A, 3V

50 W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

JANSR2N3700UB-TR

Microchip Technology

TRANS NPN 80V 1A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

封裝: -

Request a Quote

1 A

80 V

500mV @ 50mA, 500mA

10nA

50 @ 500mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

MPSA05RLRA

onsemi

TRANS NPN SS GP 60V TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)

封裝: -

Request a Quote

500 mA

60 V

250mV @ 10mA, 100mA

100nA

100 @ 10mA, 1V

625 mW

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92 (TO-226)

MJD31CETF

onsemi

TRANS NPN

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

PBSS8110T-QR

Nexperia USA Inc.

PBSS8110T-Q/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

封裝: -

Request a Quote

1 A

100 V

200mV @ 100mA, 1A

100nA

150 @ 250mA, 10V

300 mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

2N5614

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 58 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

封裝: -

Request a Quote

5 A

60 V

-

58 W

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

JANSR2N3634UB

Microchip Technology

TRANS PNP 140V 1A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

封裝: -

Request a Quote

1 A

140 V

600mV @ 5mA, 50mA

10µA

50 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB