頁 474 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2383-Y(T6DNS,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 160V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封裝: TO-226-3, TO-92-3 Long Body	庫存5,088	1A	160V	1.5V @ 50mA, 500mA	1µA (ICBO)	60 @ 200mA, 5V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
BUK7Y9R9-80E/CX	Nexperia USA Inc.	MOSFET N-CH LFPAK Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8	封裝: SC-100, SOT-669	庫存5,216	-	-	-	-	-	-	-	-	Surface Mount	SC-100, SOT-669	LFPAK56, Power-SO8
JAN2N3764	Microsemi Corporation	TRANS PNP 40V 1.5A TO-39 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 (TO-206AB)	封裝: TO-206AB, TO-46-3 Metal Can	庫存2,320	1.5A	40V	900mV @ 100mA, 1A	10µA (ICBO)	30 @ 1A, 1.5V	500mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46 (TO-206AB)
KSH112GTM_SB82051	Fairchild/ON Semiconductor	TRANS NPN DARL 100V 2A DPAK Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Power - Max: 1.75W Frequency - Transition: 25MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存2,864	2A	100V	3V @ 40mA, 4A	20µA	1000 @ 2A, 3V	1.75W	25MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
TIS97	Fairchild/ON Semiconductor	TRANS NPN 40V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存3,408	500mA	40V	-	10nA (ICBO)	250 @ 100µA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN965BU	Fairchild/ON Semiconductor	TRANS NPN 20V 5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V Power - Max: 750mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存5,296	5A	20V	1V @ 100mA, 3A	1µA	230 @ 500mA, 2V	750mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSA709COBU	Fairchild/ON Semiconductor	TRANS PNP 150V 0.7A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Power - Max: 800mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存5,904	700mA	150V	400mV @ 20mA, 200mA	100nA (ICBO)	70 @ 50mA, 2V	800mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC369_D74Z	Fairchild/ON Semiconductor	TRANS PNP 20V 1.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 625mW Frequency - Transition: 45MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存3,168	1.5A	20V	500mV @ 100mA, 1A	10µA (ICBO)	85 @ 500mA, 1V	625mW	45MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5308	Fairchild/ON Semiconductor	TRANS NPN DARL 40V 1.2A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存612,000	1.2A	40V	1.4V @ 200µA, 200mA	100nA (ICBO)	7000 @ 2mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC32825TA	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存2,896	800mA	25V	700mV @ 50mA, 500mA	100nA	160 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N2369A	STMicroelectronics	TRANS NPN 15V 0.2A TO-18 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 360mW Frequency - Transition: 675MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	封裝: TO-206AA, TO-18-3 Metal Can	庫存42,996	200mA	15V	500mV @ 10mA, 100mA	400nA	40 @ 10mA, 1V	360mW	675MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
NJVMJD128T4G	ON Semiconductor	TRANS PNP DARL 120V 8A DPAK-4 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Power - Max: 1.75W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存6,928	8A	120V	4V @ 80mA, 8A	5mA	1000 @ 4A, 4V	1.75W	-	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
FMMT591TA	Diodes Incorporated	TRANS PNP 60V 1A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存1,377,828	1A	60V	350mV @ 100mA, 1A	100nA	100 @ 500mA, 5V	500mW	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N1711	Central Semiconductor Corp	TRANS NPN 50V 0.5A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: 70MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封裝: TO-205AD, TO-39-3 Metal Can	庫存7,840	500mA	50V	1.5V @ 15mA, 150mA	10nA (ICBO)	100 @ 150mA, 10V	800mW	70MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BC856BW,135	Nexperia USA Inc.	TRANS PNP 65V 0.1A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封裝: SC-70, SOT-323	庫存5,264	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
JANSL2N2907A	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	封裝: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
2C2369A	Microchip Technology	TRANSISTOR SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC4081U3T106R	Rohm Semiconductor	TRANS NPN 50V 0.15A UMT3 Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存99,648	150 mA	50 V	400mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	200 mW	180MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
2SA812-M4-AP	Micro Commercial Co	TRANS PNP 50V 0.1A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Power - Max: 200 mW Frequency - Transition: 180MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封裝: -	Request a Quote	100 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	90 @ 1mA, 6V	200 mW	180MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
JANTX2N3635UB-TR	Microchip Technology	TRANS PNP 140V 1A 3SMD Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1.5 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	封裝: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1.5 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SA1987-O-Q	Toshiba Semiconductor and Storage	TRANS PNP 230V 15A TO3P Transistor Type: PNP Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 180 W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	封裝: -	庫存270	15 A	230 V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	180 W	30MHz	150°C (TJ)	Through Hole	TO-3PL	TO-3P(L)
RJP63K2DPK-M2-T0	Renesas Electronics Corporation	DISCTRETE / POWER TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC817-40W-MIF	Nexperia USA Inc.	TRANS NPN 45V 0.5A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	250 @ 100mA, 1V	200 mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NTE27	NTE Electronics, Inc	TRANS PNP 45V 60A TO3 Transistor Type: PNP Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 6A, 60A Current - Collector Cutoff (Max): 15mA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15A, 2V Power - Max: 170 W Frequency - Transition: - Operating Temperature: -65°C ~ 110°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	封裝: -	Request a Quote	60 A	45 V	300mV @ 6A, 60A	15mA	60 @ 15A, 2V	170 W	-	-65°C ~ 110°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
2N1716	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	封裝: -	Request a Quote	750 mA	60 V	-	-	-	-	-	175°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5552	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 5mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 15 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	封裝: -	Request a Quote	10 A	80 V	500mV @ 500µA, 5mA	-	-	15 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
JANSD2N2906A	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	封裝: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
PMST2907A-QX	Nexperia USA Inc.	PMST2907A-Q/SOT323/SC-70 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200 mW Frequency - Transition: 200MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	200 mW	200MHz	-	Surface Mount	SC-70, SOT-323	SOT-323

2SC2383-Y(T6DNS,FM

Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

庫存5,088

1A

160V

1.5V @ 50mA, 500mA

1µA (ICBO)

60 @ 200mA, 5V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

BUK7Y9R9-80E/CX

Nexperia USA Inc.

MOSFET N-CH LFPAK

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8

封裝: SC-100, SOT-669

庫存5,216

-

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

JAN2N3764

Microsemi Corporation

TRANS PNP 40V 1.5A TO-39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46 (TO-206AB)

封裝: TO-206AB, TO-46-3 Metal Can

庫存2,320

1.5A

40V

900mV @ 100mA, 1A

10µA (ICBO)

30 @ 1A, 1.5V

500mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46 (TO-206AB)

KSH112GTM_SB82051

Fairchild/ON Semiconductor

TRANS NPN DARL 100V 2A DPAK

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Power - Max: 1.75W
Frequency - Transition: 25MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存2,864

2A

100V

3V @ 40mA, 4A

20µA

1000 @ 2A, 3V

1.75W

25MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

TIS97

Fairchild/ON Semiconductor

TRANS NPN 40V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存3,408

500mA

40V

-

10nA (ICBO)

250 @ 100µA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJN965BU

Fairchild/ON Semiconductor

TRANS NPN 20V 5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
Power - Max: 750mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存5,296

5A

20V

1V @ 100mA, 3A

1µA

230 @ 500mA, 2V

750mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSA709COBU

Fairchild/ON Semiconductor

TRANS PNP 150V 0.7A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存5,904

700mA

150V

400mV @ 20mA, 200mA

100nA (ICBO)

70 @ 50mA, 2V

800mW

50MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC369_D74Z

Fairchild/ON Semiconductor

TRANS PNP 20V 1.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 625mW
Frequency - Transition: 45MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存3,168

1.5A

20V

500mV @ 100mA, 1A

10µA (ICBO)

85 @ 500mA, 1V

625mW

45MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5308

Fairchild/ON Semiconductor

TRANS NPN DARL 40V 1.2A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存612,000

1.2A

40V

1.4V @ 200µA, 200mA

100nA (ICBO)

7000 @ 2mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC32825TA

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存2,896

800mA

25V

700mV @ 50mA, 500mA

100nA

160 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N2369A

STMicroelectronics

TRANS NPN 15V 0.2A TO-18

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 360mW
Frequency - Transition: 675MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

封裝: TO-206AA, TO-18-3 Metal Can

庫存42,996

200mA

15V

500mV @ 10mA, 100mA

400nA

40 @ 10mA, 1V

360mW

675MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

NJVMJD128T4G

ON Semiconductor

TRANS PNP DARL 120V 8A DPAK-4

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存6,928

8A

120V

4V @ 80mA, 8A

5mA

1000 @ 4A, 4V

1.75W

-

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

FMMT591TA

Diodes Incorporated

TRANS PNP 60V 1A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存1,377,828

1A

60V

350mV @ 100mA, 1A

100nA

100 @ 500mA, 5V

500mW

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N1711

Central Semiconductor Corp

TRANS NPN 50V 0.5A TO-39

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: 70MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封裝: TO-205AD, TO-39-3 Metal Can

庫存7,840

500mA

50V

1.5V @ 15mA, 150mA

10nA (ICBO)

100 @ 150mA, 10V

800mW

70MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BC856BW,135

Nexperia USA Inc.

TRANS PNP 65V 0.1A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

庫存5,264

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

JANSL2N2907A

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

封裝: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

2C2369A

Microchip Technology

TRANSISTOR SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

2SC4081U3T106R

Rohm Semiconductor

TRANS NPN 50V 0.15A UMT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 200 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存99,648

150 mA

50 V

400mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

200 mW

180MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

2SA812-M4-AP

Micro Commercial Co

TRANS PNP 50V 0.1A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Power - Max: 200 mW
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封裝: -

Request a Quote

100 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

90 @ 1mA, 6V

200 mW

180MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

JANTX2N3635UB-TR

Microchip Technology

TRANS PNP 140V 1A 3SMD

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1.5 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

封裝: -

Request a Quote

1 A

140 V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1.5 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SA1987-O-Q

Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO3P

Transistor Type: PNP
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 180 W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)

封裝: -

庫存270

15 A

230 V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

180 W

30MHz

150°C (TJ)

Through Hole

TO-3PL

TO-3P(L)

RJP63K2DPK-M2-T0

Renesas Electronics Corporation

DISCTRETE / POWER TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

BC817-40W-MIF

Nexperia USA Inc.

TRANS NPN 45V 0.5A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

Request a Quote

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

250 @ 100mA, 1V

200 mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NTE27

NTE Electronics, Inc

TRANS PNP 45V 60A TO3

Transistor Type: PNP
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6A, 60A
Current - Collector Cutoff (Max): 15mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15A, 2V
Power - Max: 170 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 110°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

封裝: -

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60 A

45 V

300mV @ 6A, 60A

15mA

60 @ 15A, 2V

170 W

-

-65°C ~ 110°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

2N1716

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

封裝: -

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750 mA

60 V

-

175°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N5552

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 5mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 15 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

封裝: -

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10 A

80 V

500mV @ 500µA, 5mA

-

15 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

JANSD2N2906A

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

封裝: -

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600 mA

60 V

1.6V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

PMST2907A-QX

Nexperia USA Inc.

PMST2907A-Q/SOT323/SC-70

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 200 mW
Frequency - Transition: 200MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

200 mW

200MHz

-

Surface Mount

SC-70, SOT-323

SOT-323