頁 461 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2482(FJTN,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 100MA 300V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 900mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封裝: TO-226-3, TO-92-3 Long Body	庫存3,488	100mA	300V	1V @ 1mA, 10mA	1µA (ICBO)	30 @ 20mA, 10V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC6144	ON Semiconductor	TRANS NPN 50V 10A TO-220ML Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 6A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 270mA, 2V Power - Max: 2W Frequency - Transition: 330MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220ML	封裝: TO-220-3 Full Pack	庫存15,372	10A	50V	360mV @ 300mA, 6A	10µA (ICBO)	200 @ 270mA, 2V	2W	330MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220ML
BC237BZL1	ON Semiconductor	TRANS NPN 45V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存3,392	100mA	45V	600mV @ 5mA, 100mA	15nA	200 @ 2mA, 5V	350mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5550RLRP	ON Semiconductor	TRANS NPN 140V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存7,584	600mA	140V	250mV @ 5mA, 50mA	100nA (ICBO)	60 @ 10mA, 5V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SD1859TV2R	Rohm Semiconductor	TRANS NPN 80V 0.7A ATV Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	封裝: 3-SIP	庫存216,000	700mA	80V	400mV @ 50mA, 500mA	500nA (ICBO)	180 @ 100mA, 3V	1W	120MHz	150°C (TJ)	Through Hole	3-SIP	ATV
BC547BNMBU	Fairchild/ON Semiconductor	TRANS NPN 45V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存5,472	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC858CE6327HTSA1	Infineon Technologies	TRANS PNP 30V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存1,260,000	100mA	30V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	330mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
JANTX2N5415S	Microsemi Corporation	TRANS PNP 200V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 750mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	封裝: TO-205AD, TO-39-3 Metal Can	庫存2,864	1A	200V	2V @ 5mA, 50mA	1mA	30 @ 50mA, 10V	750mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTX2N3507L	Microsemi Corporation	TRANS NPN 50V 3A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	封裝: TO-205AA, TO-5-3 Metal Can	庫存5,952	3A	50V	1.5V @ 250mA, 2.5A	-	30 @ 1.5A, 2V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
KSC5021RTU	Fairchild/ON Semiconductor	TRANS NPN 500V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Power - Max: 50W Frequency - Transition: 18MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封裝: TO-220-3	庫存3,680	5A	500V	1V @ 600mA, 3A	10µA (ICBO)	15 @ 600mA, 5V	50W	18MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2DD1664Q-13	Diodes Incorporated	TRANS NPN 32V 1A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 1W Frequency - Transition: 280MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	封裝: TO-243AA	庫存322,380	1A	32V	400mV @ 50mA, 500mA	100nA	120 @ 100mA, 3V	1W	280MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2SD1733TLR	Rohm Semiconductor	TRANS NPN 80V 1A SOT-428 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存216,228	1A	80V	400mV @ 20mA, 500mA	1µA (ICBO)	180 @ 500mA, 3V	10W	100MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	CPT3
BSP 51 E6327	Infineon Technologies	TRANS NPN DARL 60V 1A SOT-223 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封裝: TO-261-4, TO-261AA	庫存16,956	1A	60V	1.8V @ 1mA, 1A	10µA	2000 @ 500mA, 10V	1.5W	200MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
STSA1805-AP	STMicroelectronics	TRANS NPN 60V 5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1.1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92AP	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存5,424	5A	60V	600mV @ 200mA, 5A	100nA (ICBO)	200 @ 100mA, 2V	1.1W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92AP
TIP30C	Fairchild/ON Semiconductor	TRANS PNP 100V 1A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封裝: TO-220-3	庫存42,072	1A	100V	700mV @ 125mA, 1A	200µA	15 @ 1A, 4V	2W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2SA216200L	Panasonic Electronic Components	TRANS PNP 12V 0.5A SSSMINI-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 100mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	封裝: SOT-723	庫存3,296	500mA	12V	250mV @ 10mA, 200mA	100nA (ICBO)	270 @ 10mA, 2V	100mW	200MHz	125°C (TJ)	Surface Mount	SOT-723	SSSMini3-F1
KSD5041QTA	Fairchild/ON Semiconductor	TRANS NPN 20V 5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V Power - Max: 750mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存21,282	5A	20V	1V @ 100mA, 3A	100nA (ICBO)	230 @ 500mA, 2V	750mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MMBTA92LT1G	ON Semiconductor	TRANS PNP 300V 0.5A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Power - Max: 300mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: TO-236-3, SC-59, SOT-23-3	庫存8,709,612	500mA	300V	500mV @ 2mA, 20mA	250nA (ICBO)	25 @ 30mA, 10V	300mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
TIP31C-BP-HF	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 2 W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: -	Request a Quote	3 A	100 V	1.2V @ 375mA, 3A	300µA	25 @ 1A, 4V	2 W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
NJD2873	onsemi	TRANS PWR NPN 2A 50V BIPO DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 15 W Frequency - Transition: 65MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	封裝: -	Request a Quote	2 A	50 V	300mV @ 50mA, 1A	-	120 @ 500mA, 2V	15 W	65MHz	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
CA3083Z-G	Rochester Electronics, LLC	TRANSISTOR HIGH CURRENT NPN TRAN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSL2N2222AUA	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 650 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	封裝: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	650 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
JANS2N2919	Microchip Technology	TRANS NPN 60V 0.03A TO78-6 Transistor Type: NPN Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	封裝: -	Request a Quote	30 mA	60 V	-	-	-	-	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
PBHV8540X-QX	Nexperia USA Inc.	PBHV8540X-Q/SOT89/MPT3 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 520 mW Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封裝: -	庫存2,865	500 mA	400 V	250mV @ 60mA, 300mA	100nA	100 @ 50mA, 10V	520 mW	30MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BC807-40QCZ	Nexperia USA Inc.	TRANS 45V 0.5A DFN1412D-3 Transistor Type: - Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 380 mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3	封裝: -	庫存75,000	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	250 @ 100mA, 1V	380 mW	80MHz	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3
JANTXV2N2907UB	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	封裝: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N5957	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 175 W Frequency - Transition: - Operating Temperature: - Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	封裝: -	Request a Quote	20 A	100 V	-	-	-	175 W	-	-	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
NST847BMX2T5G	onsemi	TRANS NPN 45V 0.1A 3X2DFN Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 225 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 3-X2DFN (1x0.6)	封裝: -	庫存23,937	100 mA	45 V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	225 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	0402 (1006 Metric)	3-X2DFN (1x0.6)

2SC2482(FJTN,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 100MA 300V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Power - Max: 900mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

庫存3,488

100mA

300V

1V @ 1mA, 10mA

1µA (ICBO)

30 @ 20mA, 10V

900mW

50MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC6144

ON Semiconductor

TRANS NPN 50V 10A TO-220ML

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 6A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 270mA, 2V
Power - Max: 2W
Frequency - Transition: 330MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220ML

封裝: TO-220-3 Full Pack

庫存15,372

10A

50V

360mV @ 300mA, 6A

10µA (ICBO)

200 @ 270mA, 2V

2W

330MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220ML

BC237BZL1

ON Semiconductor

TRANS NPN 45V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存3,392

100mA

45V

600mV @ 5mA, 100mA

15nA

200 @ 2mA, 5V

350mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5550RLRP

ON Semiconductor

TRANS NPN 140V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存7,584

600mA

140V

250mV @ 5mA, 50mA

100nA (ICBO)

60 @ 10mA, 5V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SD1859TV2R

Rohm Semiconductor

TRANS NPN 80V 0.7A ATV

Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV

封裝: 3-SIP

庫存216,000

700mA

80V

400mV @ 50mA, 500mA

500nA (ICBO)

180 @ 100mA, 3V

1W

120MHz

150°C (TJ)

Through Hole

3-SIP

ATV

BC547BNMBU

Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存5,472

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC858CE6327HTSA1

Infineon Technologies

TRANS PNP 30V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存1,260,000

100mA

30V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

330mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

JANTX2N5415S

Microsemi Corporation

TRANS PNP 200V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 750mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

封裝: TO-205AD, TO-39-3 Metal Can

庫存2,864

1A

200V

2V @ 5mA, 50mA

1mA

30 @ 50mA, 10V

750mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANTX2N3507L

Microsemi Corporation

TRANS NPN 50V 3A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

封裝: TO-205AA, TO-5-3 Metal Can

庫存5,952

3A

50V

1.5V @ 250mA, 2.5A

-

30 @ 1.5A, 2V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

KSC5021RTU

Fairchild/ON Semiconductor

TRANS NPN 500V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Power - Max: 50W
Frequency - Transition: 18MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封裝: TO-220-3

庫存3,680

5A

500V

1V @ 600mA, 3A

10µA (ICBO)

15 @ 600mA, 5V

50W

18MHz

150°C (TJ)

Through Hole

TO-220-3

2DD1664Q-13

Diodes Incorporated

TRANS NPN 32V 1A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 1W
Frequency - Transition: 280MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

封裝: TO-243AA

庫存322,380

1A

32V

400mV @ 50mA, 500mA

100nA

120 @ 100mA, 3V

1W

280MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2SD1733TLR

Rohm Semiconductor

TRANS NPN 80V 1A SOT-428

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存216,228

1A

80V

400mV @ 20mA, 500mA

1µA (ICBO)

180 @ 500mA, 3V

10W

100MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

CPT3

BSP 51 E6327

Infineon Technologies

TRANS NPN DARL 60V 1A SOT-223

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封裝: TO-261-4, TO-261AA

庫存16,956

1A

60V

1.8V @ 1mA, 1A

10µA

2000 @ 500mA, 10V

1.5W

200MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

STSA1805-AP

STMicroelectronics

TRANS NPN 60V 5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1.1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92AP

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存5,424

5A

60V

600mV @ 200mA, 5A

100nA (ICBO)

200 @ 100mA, 2V

1.1W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92AP

TIP30C

Fairchild/ON Semiconductor

TRANS PNP 100V 1A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封裝: TO-220-3

庫存42,072

1A

100V

700mV @ 125mA, 1A

200µA

15 @ 1A, 4V

2W

3MHz

150°C (TJ)

Through Hole

TO-220-3

2SA216200L

Panasonic Electronic Components

TRANS PNP 12V 0.5A SSSMINI-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Power - Max: 100mW
Frequency - Transition: 200MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1

封裝: SOT-723

庫存3,296

500mA

12V

250mV @ 10mA, 200mA

100nA (ICBO)

270 @ 10mA, 2V

100mW

200MHz

125°C (TJ)

Surface Mount

SOT-723

SSSMini3-F1

KSD5041QTA

Fairchild/ON Semiconductor

TRANS NPN 20V 5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
Power - Max: 750mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存21,282

5A

20V

1V @ 100mA, 3A

100nA (ICBO)

230 @ 500mA, 2V

750mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MMBTA92LT1G

ON Semiconductor

TRANS PNP 300V 0.5A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 300mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: TO-236-3, SC-59, SOT-23-3

庫存8,709,612

500mA

300V

500mV @ 2mA, 20mA

250nA (ICBO)

25 @ 30mA, 10V

300mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

TIP31C-BP-HF

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 2 W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: -

Request a Quote

3 A

100 V

1.2V @ 375mA, 3A

300µA

25 @ 1A, 4V

2 W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

NJD2873

onsemi

TRANS PWR NPN 2A 50V BIPO DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 15 W
Frequency - Transition: 65MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

封裝: -

Request a Quote

2 A

50 V

300mV @ 50mA, 1A

-

120 @ 500mA, 2V

15 W

65MHz

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

CA3083Z-G

Rochester Electronics, LLC

TRANSISTOR HIGH CURRENT NPN TRAN

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

JANSL2N2222AUA

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 650 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

封裝: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

650 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

JANS2N2919

Microchip Technology

TRANS NPN 60V 0.03A TO78-6

Transistor Type: NPN
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

封裝: -

Request a Quote

30 mA

60 V

-

200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

PBHV8540X-QX

Nexperia USA Inc.

PBHV8540X-Q/SOT89/MPT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 520 mW
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封裝: -

庫存2,865

500 mA

400 V

250mV @ 60mA, 300mA

100nA

100 @ 50mA, 10V

520 mW

30MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BC807-40QCZ

Nexperia USA Inc.

TRANS 45V 0.5A DFN1412D-3

Transistor Type: -
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 380 mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3

封裝: -

庫存75,000

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

250 @ 100mA, 1V

380 mW

80MHz

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

JANTXV2N2907UB

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

封裝: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2N5957

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 175 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Stud Mount
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package: TO-61

封裝: -

Request a Quote

20 A

100 V

-

175 W

-

Stud Mount

TO-211MA, TO-210AC, TO-61-4, Stud

TO-61

NST847BMX2T5G

onsemi

TRANS NPN 45V 0.1A 3X2DFN

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 225 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 3-X2DFN (1x0.6)

封裝: -

庫存23,937

100 mA

45 V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

225 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

0402 (1006 Metric)

3-X2DFN (1x0.6)