頁 422 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1761,T6F(J	Toshiba Semiconductor and Storage	TRANS PNP 3A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封裝: TO-226-3, TO-92-3 Long Body	庫存3,152	3A	50V	500mV @ 75mA, 1.5A	100nA (ICBO)	120 @ 100mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD1819G0L	Panasonic Electronic Components	TRANS NPN 50V 0.1A SMINI-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 150mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	封裝: SC-85	庫存36,000	100mA	50V	300mV @ 10mA, 100mA	100µA	160 @ 2mA, 10V	150mW	150MHz	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
BUB941ZT	STMicroelectronics	TRANS NPN DARL 350V 15A D2PAK Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V Power - Max: 150W Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,688	15A	350V	1.8V @ 250mA, 10A	100µA	300 @ 5A, 10V	150W	-	175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
BC327-040	ON Semiconductor	TRANS PNP 45V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 260MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存5,248	800mA	45V	700mV @ 50mA, 500mA	100nA	250 @ 100mA, 1V	625mW	260MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MJE801STU	Fairchild/ON Semiconductor	TRANS NPN DARL 60V 4A TO126 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	封裝: TO-225AA, TO-126-3	庫存7,280	4A	60V	2.8V @ 40mA, 2A	100µA	750 @ 2A, 3V	40W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
BC636TAR	Fairchild/ON Semiconductor	TRANS PNP 45V 1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存2,768	1A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PHPT60406PYX	Nexperia USA Inc.	TRANS PNP BIPO 40V 6A 8LFPAK Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 540mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 500mA, 2V Power - Max: 1.35W Frequency - Transition: 110MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8	封裝: SC-100, SOT-669	庫存5,120	6A	40V	540mV @ 300mA, 6A	100nA	210 @ 500mA, 2V	1.35W	110MHz	175°C (TJ)	Surface Mount	SC-100, SOT-669	LFPAK56, Power-SO8
BDX34CG	ON Semiconductor	TRANS PNP DARL 100V 10A TO-220AB Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 70W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存14,028	10A	100V	2.5V @ 6mA, 3A	500µA	750 @ 3A, 3V	70W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SA216400L	Panasonic Electronic Components	TRANS PNP 20V 0.03A SSSMINI3P Transistor Type: PNP Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Power - Max: 100mW Frequency - Transition: 300MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	封裝: SOT-723	庫存3,152	30mA	20V	100mV @ 1mA, 10mA	100µA	70 @ 1mA, 10V	100mW	300MHz	125°C (TJ)	Surface Mount	SOT-723	SSSMini3-F1
2SB1733TL	Rohm Semiconductor	TRANS PNP 30V 1A TUMT3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Power - Max: 800mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: TUMT3	封裝: 3-SMD, Flat Leads	庫存4,032	1A	30V	350mV @ 25mA, 500mA	100nA (ICBO)	270 @ 100mA, 2V	800mW	320MHz	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	TUMT3
2SA1313-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PNP 50V 500MA TO236-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封裝: TO-236-3, SC-59, SOT-23-3	庫存58,560	500mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 100mA, 1V	200mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
BU941ZPFI	STMicroelectronics	TRANS NPN DARL 350V 15A TO-3PF Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V Power - Max: 65W Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PF Supplier Device Package: TO-3PF	封裝: TO-3PF	庫存6,324	15A	350V	2V @ 300mA, 12A	100µA	300 @ 5A, 10V	65W	-	175°C (TJ)	Through Hole	TO-3PF	TO-3PF
JANS2N2906AL	Microchip Technology	TRANS PNP 60V 0.6A TO18 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	封裝: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
MJD122-1G	onsemi	TRANS NPN DARL 100V 8A DPAK Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Power - Max: 1.75 W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	封裝: -	Request a Quote	8 A	100 V	4V @ 80mA, 8A	10µA	1000 @ 4A, 4V	1.75 W	4MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
2SD1936U-AC	onsemi	BIP NPN 0.8A 15V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N3467-PBFREE	Central Semiconductor Corp	TRANS PNP 40V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Power - Max: 1 W Frequency - Transition: 175MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封裝: -	Request a Quote	1 A	40 V	1V @ 100mA, 1A	100nA (ICBO)	40 @ 500mA, 1V	1 W	175MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
JAN2N4930U4	Microchip Technology	TRANS PNP 200V 0.2A U4 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	封裝: -	Request a Quote	200 mA	200 V	1.2V @ 3mA, 30mA	-	50 @ 30mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
2N2907AE3	Microchip Technology	TRANS PNP 60V 0.6A TO18 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	封裝: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
PZTA92T1	onsemi	TRANS SS PNP 500MA 300V SOT223 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DXTN22040CFGQ-7	Diodes Incorporated	PWR MID PERF TRANSISTOR POWERDI3 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1.1 W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (SWP) Type UX	封裝: -	庫存5,940	2 A	40 V	600mV @ 300mA, 3A	50nA	200 @ 500mA, 2V	1.1 W	200MHz	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PowerDI3333-8 (SWP) Type UX
2N5550-AP	Micro Commercial Co	TRANS NPN 140V 0.6A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 625 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	封裝: -	Request a Quote	600 mA	140 V	250mV @ 5mA, 50mA	100nA (ICBO)	60 @ 10mA, 5V	625 mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
2N4402-AP	Micro Commercial Co	TRANS PNP 40V 0.6A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V Power - Max: 625 mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	封裝: -	Request a Quote	600 mA	40 V	750mV @ 50mA, 500mA	100nA	50 @ 150mA, 2V	625 mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
2N3848	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 150 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-211MB, TO-63-4, Stud Supplier Device Package: TO-63	封裝: -	Request a Quote	20 A	200 V	-	-	-	150 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-211MB, TO-63-4, Stud	TO-63
2SA1122CDTL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANS PNP Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 55 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V Power - Max: 150 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-CMPAK	封裝: -	Request a Quote	100 mA	55 V	500mV @ 1mA, 10mA	500nA (ICBO)	160 @ 2mA, 12V	150 mW	-	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-CMPAK
2N6183	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 60 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	封裝: -	Request a Quote	10 A	80 V	700mV @ 200µA, 2mA	-	-	60 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
2N6486-TIN-LEAD	Central Semiconductor Corp	TRANS NPN 40V 15A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V Power - Max: 1.8 W Frequency - Transition: 5MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封裝: -	庫存441	15 A	40 V	3.5V @ 5A, 15A	1mA	20 @ 5A, 4V	1.8 W	5MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NTE294	NTE Electronics, Inc	TRANS PNP 50V 1A TO92L Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V Power - Max: 1 W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92L	封裝: -	Request a Quote	1 A	50 V	400mV @ 50mA, 500mA	100nA (ICBO)	120 @ 500mA, 10V	1 W	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92L
2SC3380ASTR-E	Renesas	2SC3380ASTR - SILICON NPN TRIPLE Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 20mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 20V Power - Max: 1 W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: UPAK	封裝: -	Request a Quote	100 mA	300 V	1.5V @ 2mA, 20mA	1µA	30 @ 20mA, 20V	1 W	80MHz	150°C (TJ)	Surface Mount	TO-243AA	UPAK

2SA1761,T6F(J

Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

庫存3,152

3A

50V

500mV @ 75mA, 1.5A

100nA (ICBO)

120 @ 100mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SD1819G0L

Panasonic Electronic Components

TRANS NPN 50V 0.1A SMINI-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

封裝: SC-85

庫存36,000

100mA

50V

300mV @ 10mA, 100mA

100µA

160 @ 2mA, 10V

150mW

150MHz

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

BUB941ZT

STMicroelectronics

TRANS NPN DARL 350V 15A D2PAK

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Power - Max: 150W
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,688

15A

350V

1.8V @ 250mA, 10A

100µA

300 @ 5A, 10V

150W

-

175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

BC327-040

ON Semiconductor

TRANS PNP 45V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 260MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存5,248

800mA

45V

700mV @ 50mA, 500mA

100nA

250 @ 100mA, 1V

625mW

260MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MJE801STU

Fairchild/ON Semiconductor

TRANS NPN DARL 60V 4A TO126

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

封裝: TO-225AA, TO-126-3

庫存7,280

4A

60V

2.8V @ 40mA, 2A

100µA

750 @ 2A, 3V

40W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

BC636TAR

Fairchild/ON Semiconductor

TRANS PNP 45V 1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存2,768

1A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PHPT60406PYX

Nexperia USA Inc.

TRANS PNP BIPO 40V 6A 8LFPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 540mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 500mA, 2V
Power - Max: 1.35W
Frequency - Transition: 110MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8

封裝: SC-100, SOT-669

庫存5,120

6A

40V

540mV @ 300mA, 6A

100nA

210 @ 500mA, 2V

1.35W

110MHz

175°C (TJ)

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

BDX34CG

ON Semiconductor

TRANS PNP DARL 100V 10A TO-220AB

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 70W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存14,028

10A

100V

2.5V @ 6mA, 3A

500µA

750 @ 3A, 3V

70W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SA216400L

Panasonic Electronic Components

TRANS PNP 20V 0.03A SSSMINI3P

Transistor Type: PNP
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Power - Max: 100mW
Frequency - Transition: 300MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1

封裝: SOT-723

庫存3,152

30mA

20V

100mV @ 1mA, 10mA

100µA

70 @ 1mA, 10V

100mW

300MHz

125°C (TJ)

Surface Mount

SOT-723

SSSMini3-F1

2SB1733TL

Rohm Semiconductor

TRANS PNP 30V 1A TUMT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Power - Max: 800mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: TUMT3

封裝: 3-SMD, Flat Leads

庫存4,032

1A

30V

350mV @ 25mA, 500mA

100nA (ICBO)

270 @ 100mA, 2V

800mW

320MHz

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

TUMT3

2SA1313-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PNP 50V 500MA TO236-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封裝: TO-236-3, SC-59, SOT-23-3

庫存58,560

500mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 100mA, 1V

200mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

BU941ZPFI

STMicroelectronics

TRANS NPN DARL 350V 15A TO-3PF

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Power - Max: 65W
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PF
Supplier Device Package: TO-3PF

封裝: TO-3PF

庫存6,324

15A

350V

2V @ 300mA, 12A

100µA

300 @ 5A, 10V

65W

-

175°C (TJ)

Through Hole

TO-3PF

JANS2N2906AL

Microchip Technology

TRANS PNP 60V 0.6A TO18

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

封裝: -

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600 mA

60 V

1.6V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

MJD122-1G

onsemi

TRANS NPN DARL 100V 8A DPAK

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 1.75 W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

封裝: -

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8 A

100 V

4V @ 80mA, 8A

10µA

1000 @ 4A, 4V

1.75 W

4MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

2SD1936U-AC

onsemi

BIP NPN 0.8A 15V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

2N3467-PBFREE

Central Semiconductor Corp

TRANS PNP 40V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 1 W
Frequency - Transition: 175MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封裝: -

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1 A

40 V

1V @ 100mA, 1A

100nA (ICBO)

40 @ 500mA, 1V

1 W

175MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

JAN2N4930U4

Microchip Technology

TRANS PNP 200V 0.2A U4

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

封裝: -

Request a Quote

200 mA

200 V

1.2V @ 3mA, 30mA

-

50 @ 30mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

2N2907AE3

Microchip Technology

TRANS PNP 60V 0.6A TO18

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

封裝: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

PZTA92T1

onsemi

TRANS SS PNP 500MA 300V SOT223

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

DXTN22040CFGQ-7

Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.1 W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (SWP) Type UX

封裝: -

庫存5,940

2 A

40 V

600mV @ 300mA, 3A

50nA

200 @ 500mA, 2V

1.1 W

200MHz

-55°C ~ 150°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PowerDI3333-8 (SWP) Type UX

2N5550-AP

Micro Commercial Co

TRANS NPN 140V 0.6A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

封裝: -

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600 mA

140 V

250mV @ 5mA, 50mA

100nA (ICBO)

60 @ 10mA, 5V

625 mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

2N4402-AP

Micro Commercial Co

TRANS PNP 40V 0.6A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Power - Max: 625 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

封裝: -

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600 mA

40 V

750mV @ 50mA, 500mA

100nA

50 @ 150mA, 2V

625 mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

2N3848

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 150 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-211MB, TO-63-4, Stud
Supplier Device Package: TO-63

封裝: -

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20 A

200 V

-

150 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-211MB, TO-63-4, Stud

TO-63

2SA1122CDTL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Power - Max: 150 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-CMPAK

封裝: -

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100 mA

55 V

500mV @ 1mA, 10mA

500nA (ICBO)

160 @ 2mA, 12V

150 mW

-

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-CMPAK

2N6183

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 60 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

封裝: -

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10 A

80 V

700mV @ 200µA, 2mA

-

60 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

2N6486-TIN-LEAD

Central Semiconductor Corp

TRANS NPN 40V 15A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Power - Max: 1.8 W
Frequency - Transition: 5MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封裝: -

庫存441

15 A

40 V

3.5V @ 5A, 15A

1mA

20 @ 5A, 4V

1.8 W

5MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

NTE294

NTE Electronics, Inc

TRANS PNP 50V 1A TO92L

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
Power - Max: 1 W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92L

封裝: -

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1 A

50 V

400mV @ 50mA, 500mA

100nA (ICBO)

120 @ 500mA, 10V

1 W

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92L

2SC3380ASTR-E

Renesas

2SC3380ASTR - SILICON NPN TRIPLE

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 20mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 20V
Power - Max: 1 W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: UPAK

封裝: -

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100 mA

300 V

1.5V @ 2mA, 20mA

1µA

30 @ 20mA, 20V

1 W

80MHz

150°C (TJ)

Surface Mount

TO-243AA

UPAK