頁 223 - 電晶體 - 雙極 (BJT) - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - 單

記錄 20,307
頁  223/726
圖片
零件編號
製造商
描述
封裝
庫存
數量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC846BW/DG/B2,115
Nexperia USA Inc.

TRANS GEN PURPOSE SC-70

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,224
-
-
-
-
-
-
-
-
-
-
-
CMPT5551E TR
Central Semiconductor Corp

TRANS PNP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 220V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: TO-236-3, SC-59, SOT-23-3
庫存5,344
600mA
220V
100mV @ 5mA, 50mA
50nA
120 @ 10mA, 5V
350mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BCW72LT1
ON Semiconductor

TRANS NPN 45V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,856
100mA
45V
250mV @ 500µA, 10mA
100nA (ICBO)
200 @ 2mA, 5V
300mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2SA1162GT1
ON Semiconductor

TRANS PNP 50V 0.15A SC-59

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,200
150mA
50V
300mV @ 10mA, 100mA
100nA
200 @ 2mA, 6V
200mW
80MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
BC517_L34Z
Fairchild/ON Semiconductor

TRANS NPN DARL 30V 1.2A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存6,368
1.2A
30V
1V @ 100µA, 100mA
100nA (ICBO)
30000 @ 20mA, 2V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BC859CMTF
Fairchild/ON Semiconductor

TRANS PNP 30V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 310mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,344
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
310mW
150MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC848BWH6327XTSA1
Infineon Technologies

TRANS NPN 30V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存6,304
100mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
NJVMJB42CT4G
ON Semiconductor

TRANS PNP 100V 6A D2PAK-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,296
6A
100V
1.5V @ 600mA, 6A
700µA
15 @ 3A, 4V
2W
3MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
MMS8050-H-TP
Micro Commercial Co

TRANS PREBIAS NPN 25V SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: TO-236-3, SC-59, SOT-23-3
庫存5,776
500mA
25V
600mV @ 50mA, 500mA
100nA (ICBO)
120 @ 50mA, 1V
300mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BC548C B1G
TSC America Inc.

TRANSISTOR, NPN, 30V, 0.1A, 420A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存2,960
100mA
30V
-
15nA (ICBO)
420 @ 2mA, 5V
500mW
-
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BC548A B1G
TSC America Inc.

TRANSISTOR, NPN, 30V, 0.1A, 110A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存4,192
100mA
30V
-
15nA (ICBO)
110 @ 2mA, 5V
500mW
-
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BC807-16,235
Nexperia USA Inc.

TRANS PNP 45V 0.5A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,472
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
250mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
FSB749
Fairchild/ON Semiconductor

TRANS PNP 25V 3A SSOT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SuperSOT-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,296
3A
25V
600mV @ 300mA, 3A
100nA (ICBO)
100 @ 1A, 2V
500mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SuperSOT-3
TIP50TU
Fairchild/ON Semiconductor

TRANS NPN 400V 1A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
  • Power - Max: 2W
  • Frequency - Transition: 10MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存10,536
1A
400V
1V @ 200mA, 1A
1mA
30 @ 300mA, 10V
2W
10MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
STK13003
STMicroelectronics

TRANS NPN 400V 1.5A SOT-82

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SOT-82
  • Supplier Device Package: SOT-82-3
封裝: SOT-82
庫存33,150
1.5A
400V
1.5V @ 500mA, 1.5A
5mA
5 @ 1A, 2V
40W
-
150°C (TJ)
Through Hole
SOT-82
SOT-82-3
ZTX655
Diodes Incorporated

TRANS NPN 150V 1A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
封裝: E-Line-3
庫存14,574
1A
150V
500mV @ 200mA, 1A
100nA (ICBO)
50 @ 500mA, 5V
1W
30MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
hot NSS12200LT1G
ON Semiconductor

TRANS PNP 12V 2A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
  • Power - Max: 460mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,890,860
2A
12V
180mV @ 200mA, 2A
100nA (ICBO)
250 @ 500mA, 2V
460mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
PBHV8118T,215
Nexperia USA Inc.

TRANS NPN 180V 1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存6,480
1A
180V
50mV @ 20mA, 100mA
100nA
50 @ 500mA, 10V
300mW
30MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BC817-16WHE3-TP
Micro Commercial Co

TRANS NPN 45V 0.5A SOT323

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: -
庫存18,000
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 500mA, 1V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
2N333ALT2
Microchip Technology

NPN POWER SILICON TRANSISTORS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSL2N3498L
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
封裝: -
Request a Quote
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2N5339QFN-TR
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
封裝: -
Request a Quote
5 A
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
1 W
-
-55°C ~ 200°C
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
MJD42C-13
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
  • Power - Max: 1.5 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
封裝: -
Request a Quote
6 A
100 V
1.5V @ 600mA, 6A
1µA
30 @ 300mA, 4V
1.5 W
3MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
MMST5401Q-7-F
Diodes Incorporated

TRANS PNP 150V 0.2A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: -
庫存7,944
200 mA
150 V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
200 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
2SC4406-4-TL-E
onsemi

BIP NPN 50MA 15V FT=1.2G

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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-
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-
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2N5539
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 20 A
  • Voltage - Collector Emitter Breakdown (Max): 130 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1.5mA, 10mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 175 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MB, TO-63-4, Stud
  • Supplier Device Package: TO-63
封裝: -
Request a Quote
20 A
130 V
800mV @ 1.5mA, 10mA
-
-
175 W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-211MB, TO-63-4, Stud
TO-63
D44TD5
Harris Corporation

TRANS NPN 400V 2A TO220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 2V
  • Power - Max: 50 W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: -
Request a Quote
2 A
400 V
1V @ 400mA, 2A
100µA
8 @ 1A, 2V
50 W
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
2N6249T1
Microsemi Corporation

NPN TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
  • Power - Max: 6 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254AA
封裝: -
Request a Quote
10 A
200 V
1.5V @ 1A, 10A
1mA
10 @ 10A, 3V
6 W
-
-65°C ~ 200°C
Through Hole
TO-254-3, TO-254AA
TO-254AA